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11.Design_of_Perfect_Absorber_Based_on_Metagratings_Theory_and_Experiment

This article presents a theoretical and experimental design methodology for perfect absorbers (PAs) based on metagratings (MGs), focusing on achieving high absorption rates for electromagnetic waves. It discusses the combination of resonators to extend absorption capabilities to multiple frequencies and the use of multilayer structures to enhance bandwidth. The findings demonstrate the effectiveness of the proposed designs, which have potential applications in various fields such as filters, sensors, and solar energy absorption.

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0% found this document useful (0 votes)
12 views11 pages

11.Design_of_Perfect_Absorber_Based_on_Metagratings_Theory_and_Experiment

This article presents a theoretical and experimental design methodology for perfect absorbers (PAs) based on metagratings (MGs), focusing on achieving high absorption rates for electromagnetic waves. It discusses the combination of resonators to extend absorption capabilities to multiple frequencies and the use of multilayer structures to enhance bandwidth. The findings demonstrate the effectiveness of the proposed designs, which have potential applications in various fields such as filters, sensors, and solar energy absorption.

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Inbavalli
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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1832 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO.

2, FEBRUARY 2023

Design of Perfect Absorber Based on Metagratings:


Theory and Experiment
Zhen Tan , Graduate Student Member, IEEE, Jianjia Yi , Member, IEEE,
Qiang Cheng , Senior Member, IEEE, and Shah Nawaz Burokur , Senior Member, IEEE

Abstract— This article proposes an analytical design method- [9], [10], [11], [12]. Among them, the absorber with near-unity
ology for different kinds of perfect absorbers (PAs) based on absorption rate for normally incident plane waves at one given
metagratings (MGs). In the specific analysis and design, the frequency is called metamaterial perfect absorber (PA) [13].
period of the MG is chosen to ensure that there is only
the 0th order diffraction mode. Using the established theory, To extend the single-frequency-to-multifrequency operation
the supercell of the MG is rigorously analyzed to derive a of the metamaterial PA, several resonators are combined
specific load impedance density expression that allows achieving together to generate multiple resonance points [14], [15],
destructive interference of specular reflection of the substrate [16], [17], [18]. Meanwhile, for further expanding the narrow
and 0th mode diffraction such that perfect wave absorption is absorption band, multilayer structure is applied in the design to
realized. Four kinds of PAs composed of different supercells
of MG with different bandwidths are systematically analyzed, realize broadband absorption [19], [20], [21], [22], [23]. These
designed, simulated, and experimentally verified. The simulation metamaterial-based designs bring many benefits to the design
and measurement results are in good agreement and consistent of absorbers, allowing to achieve electrically ultrathin [24],
with the theoretical analysis, showing the validity of the provided [25], [26], [27], broadband [28], [29], dual-polarization [30],
theory and technique for electromagnetic wave absorption. [31] and angle-insensitive [32] structures at frequencies from
Index Terms— Analytical design, metagratings (MGs), perfect microwave to optical domains. Moreover, these metamaterial
absorber (PA). absorbers show a wide range of applications in different fields,
such as filters [33], sensors [34], and solar energy absorption
I. I NTRODUCTION [35]. On the other hand, metagratings (MGs) have received
extensive attention as a special class of periodic structures
W ITH the rapid development of radio and optics tech-
nology, wave-absorbing materials play an irreplaceable
role in stealth technology [1], electromagnetic compatibility
[36], [37], [38], [39], [40], [41], [42] since they can achieve
near-perfect electromagnetic wave manipulation through a
[2], suppression of electromagnetic radiation [3], energy sens- very simple structure. More importantly, unlike most previous
ing and detection [4], and other military aspects [5], [6], metamaterial designs, which are based on physical intuition
[7], [8]. Since the traditional absorbing materials cannot meet and numerical optimization, a series of rigorous and analytical
new demands of modern absorbing technologies, metamaterial solutions have been proposed for the design of MG structures
absorbers with simple structure, lightness and thinness, and [37], allowing clear determination of the physical parameters.
high absorption rate have attracted more and more attention In [43] and [44], an MG is used to design an absorber, which
achieves perfect narrowband absorption performance through
Manuscript received 5 July 2022; revised 18 November 2022; accepted an easy-to-implement structure. Meanwhile, the absorption
1 December 2022. Date of publication 9 January 2023; date of current version bandwidth can be broadened through arranging multiple meta-
3 February 2023. This work was supported in part by the State Key Laboratory
of Millimeter Waves through the Open Project under Grant K202233, in part atoms in one supercell [45], and the absorption angle can
by the Natural Science Foundation of Shanxi Province under Grant 2023- be broadened by the design of multiple layers or multiple
JC-YB-492, and in part by the Chinese Scholarship Council under Grant meta-atoms [46]. However, the current MG PAs are mainly
202206280099. (Corresponding author: Jianjia Yi.)
Zhen Tan is with the School of Information and Communication Engineer- designed through simulation software optimization or global
ing, Xi’an Jiaotong University, Xi’an 710049, China, and also with the Labo- optimization algorithm, without clear theoretical guidance.
ratoire Energétique Mécanique Electromagnétisme (LEME), UPL, Université In this article, the principle and design theory of MG
Paris Nanterre, 92410 Ville-d’Avray, France (e-mail: [email protected]).
Jianjia Yi is with the School of Information and Communication Engi- PAs are systematically studied and the detailed analytical
neering, Xi’an Jiaotong University, Xi’an 710049, China, and also with the design process is given. The influence of different impedance
State Key Laboratory of Millimeter Waves, School of Information Science and densities on the absorption bandwidth of the MG PAs is
Engineering, Southeast University, Nanjing 210096, China (e-mail: jianjia.yi@
xjtu.edu.cn). discussed in detail from the perspective of impedance density
Qiang Cheng is with the State Key Laboratory of Millimeter Waves, composition. Meanwhile, the bandwidth of the MG PA is not
School of Information Science and Engineering, Southeast University, Nanjing limited to narrowband performance, but various absorption
210096, China (e-mail: [email protected]).
Shah Nawaz Burokur is with the Laboratoire Energétique Mécanique Elec- bandwidths can also be realized. Unlike conventional material
tromagnétisme (LEME), UPL, Université Paris Nanterre, 92410 Ville-d’Avray, absorbers [47], [48], which are composed of closely packed
France (e-mail: [email protected]). finely discretized unit cells, the proposed MG PA is composed
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/TAP.2022.3233472. of relatively sparse periodic meta-atoms and its structure is
Digital Object Identifier 10.1109/TAP.2022.3233472 only restricted by the impedance density, which does not
0018-926X © 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See https://www.ieee.org/publications/rights/index.html for more information.

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TAN et al.: DESIGN OF PERFECT ABSORBER BASED ON METAGRATINGS: THEORY AND EXPERIMENT 1833

Fig. 1. Schematic of MG PA with four kinds of supercells.

require considering complicated microstructure designs for wave impedance of the surrounding air medium are k =
additional resonance. ω(μ1 ε1 )1/2 = 2π/λ and η = (μ1/ε1 )1/2 , respectively, while the
wavenumber and wave impedance of the dielectric substrate
are k  = ω(μ2 ε2 )1/2 and η = (μ2/ε2 )1/2 , respectively. Here,
II. A NALYSIS OF MG FOR ACHIEVING
μ1 = μ2 = μ0 (μ0 is the permeability of the vacuum) and the
P ERFECT A BSORPTION
time harmonic dependence of e j ωt is assumed.
The configuration of the MG PA and its corresponding Referring to the coordinate system established in Fig. 1, the
coordinate system are shown in Fig. 1. The supercell can be expression of the incident plus the reflected electric field in air
classified into four types, according to the composition of the is
impedance density, which corresponds to different absorbing  
bandwidths. The MG PA is surrounded by air with permittivity E xexc (y, z ≤ −h) = E in e− j k(z+h) + R0 e j k(z+h) e− j k sin(θin )y .
ε1 = ε0 , and the metal wire with impedance density Z is (1)
positioned on the dielectric substrate with a thickness of h.
The permittivity of the substrate is ε2 = εr ε0 , where ε0 is the For simplicity, here, we consider the normal incidence, i.e.,
permittivity of vacuum. The period of the metal wire array θin = 0, and then, the electric field in the substrate is
is  y , which is less than one wavelength λ0 of the incident  
wave in vacuum to ensure that the MG has only one diffraction sin k  z
mode (0th mode). Since the wave propagation direction of E x (y, −h ≤ z < 0) = −E in T0
exc
(2)
sin(k  h)
the 0th order diffraction mode is the same as the mirror
reflection of the incident wave, we can find that the appropriate where R0 and T0 are the reflection coefficient and the trans-
impedance density to let the 0th order diffraction mode and the mission coefficient of the normal incidence in the substrate,
mirror reflection have the same amplitude and phase difference respectively. According to Maxwell’s equations H y (y, z) =
π such that electromagnetic interference cancellation can be ( j/kη)∂ E x (y, z)/∂ z and combining the continuous boundary
achieved to realize perfect wave absorption. conditions of the tangential electric field and magnetic field at
We excite the MG with a transverse electric (TE) polarized the interface z = −h with E xexc (y, z ≤ −h) = E xexc (y, −h ≤
plane wave (E z = E y = Hx = 0). The wavenumber and z < 0) and H yexc (y, z ≤ −h) = H yexc(y, −h ≤ z < 0),

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1834 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO. 2, FEBRUARY 2023

we can obtain
   
j tan k  h − η/η
R0 =
j tan(k  h) + (η/η )
 
j 2 tan k  h
T0 = 1 + R0 = . (3)
j tan(k  h) + (η/η )
The total electric field generated by all the line currents in Fig. 2. Front view of the MG PA with infinitesimal layer.
air can be written as [37], [49]


E xi (y, z ≤ −h) βm = (εr k 2 − ξm2 )1/2 is the longitudinal component of the
n=−∞ mth mode wavenumber in the dielectric substrate and ξm =
∞   ξm = 2πm/ y is the transverse component of the mth
kη   2
= −I H0(2) k n y − y + (z + h)2 (4) mode wavenumber in the dielectric substrate. τm is the ratio
4 n=−∞
of the amplitude of the mth mode diffraction wave after
and it can be transformed to the expression form of a sum- it first crosses the interface between the substrate and air
mation of Floquet modes via the Poisson summation formula to the amplitude of the mth mode diffraction wave when
when both terms y and (z + h) are not zero [49] it does not cross the interface between the medium and
∞ ∞
the air.
 kη  − j ξm y e− jβm |z+h| As the corresponding magnetic field in air and the sub-
E xi (y, z ≤ −h) = −I e (5)
n=−∞
2 y m=−∞ βm strate can be derived using Maxwell’s equation H y (y, z) =
( j/kη)∂ E x (y, z)/∂ z, (10) yields
where βm = (k 2 − ξm2 )1/2 is the longitudinal component of
the mth mode wavenumber in air and ξm = 2πm/ y is the H yline(y, −h ≤ z < 0)
transverse component of the mth mode wavenumber in air.
1 ∞   
 
When considering the presence of the grounded dielectric =− I τm e− jβm z + e jβm z e− j ξm y . (11)
substrate, a reflection coefficient Rm must be introduced in (5). 2 y m=−∞
The electric field generated by all the line currents in air can
To calculate τm , Rm , and Tm , we need to consider an infini-
then be rewritten as
tesimal air layer with thickness δ between the metal wire and

kη  1 + Rm − j ξm y − jβm |z+h| the dielectric substrate [37]. As shown in Fig. 2, the electric
E xline (y, z ≤ −h) = −I e e .
2 y m=−∞ βm field generated by the line currents in the infinitesimal air layer
(−h − δ ≤ z ≤ −h) can be written as
(6)
For the convenience of subsequent expression, we define a new E xline (y, −h − δ ≤ z ≤ −h)
∞ 
function of impedance density Z (y, z + h), which is written kη  1 − jβm (z+h+δ) Rm jβm (z+h+δ) − j ξm y
as =− I e + e e .
2 y m=−∞ βm βm
+∞
kη  1 + Rm − j ξm y − jβm |z+h| (12)
Z (y, z + h) = e e (7)
2 y m=−∞ βm
The magnetic field in the infinitesimal air layer is then
and the electric field of the line currents in (6) can be rewritten
as H yline (y, −h − δ ≤ z ≤ −h)

E xline (y, z ≤ −h) = −I Z (y, z + h). 1   − jβm (z+h+δ) 
(8) =− I e − Rm e jβm (z+h+δ) e− j ξm y .
2 y m=−∞
In particular, when y = 0 and z + h = 0, Z (0, 0) needs to be
represented as (see the Appendix) (13)
  ∞  According to the boundary conditions of the continuity of the
η kη y 2π Tm 1
Z (0, 0) = T0 + j ln + − . tangential electric field and magnetic field at the interface z
2 y 2π 2πr  y αm m
m=1 = −h, we have E xline (y, −h − δ ≤ z ≤ −h) = E xline (y, −h ≤
(9) z < 0) and H yline (y, −h − δ ≤ z ≤ −h) = H yline (y, −h ≤ z <
Similar to (6), the electric field generated by the line 0); when taking z = −h and δ → 0, we can obtain
currents in the substrate can be written as  
j tan βm h − βm /βm
∞ Rm =  
k  η 
 
e− jβm z − e jβm z − j ξm y j tan βm h + βm /βm
E xline (y, −h ≤ z < 0) = − I τm e  
2 y m=−∞ βm j 2 tan βm h
(10) Tm = 1 + Rm =   (14)
j tan βm h + βm /βm
where Rm and Tm are, respectively, the reflection and βm /βm
τm = Tm   (15)
transmission coefficients of the mth diffraction mode. j 2 sin βm h

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TAN et al.: DESIGN OF PERFECT ABSORBER BASED ON METAGRATINGS: THEORY AND EXPERIMENT 1835

and then, (10) can be rewritten as


∞   
k  
η  T sin β z 
 m  e − j ξm y .
m
E xline (y, −h ≤ z < 0) = I
2 y m=−∞ βm sin βm h
(16)
Since βm and βm are complex numbers, they can be rewritten Fig. 3. Equivalent structure relationship between cylindrical wire and flat
as βm = − j αm and βm = − j αm , respectively, where αm and wire.
αm are given as
In order to meet the actual fabrication requirements, a flat
αm = k (am) − 1, 2
αm = k (am) − εr2
(17) wire structure is used to replace the cylindrical wire structure,
where the approximate equivalent relationship between the flat
where a is a real number defined as a = λ/ y . wire width w and the cylindrical wire radius r is w = 4r [37],
The diffraction field of the MG in air can be regarded as [38], [49], as shown in Fig. 3.
the superposition of the excitation field of the line currents Substituting r = w/4 into (24), the load impedance density
and the reflected field of the incident wave. According to (6) expression can be further rewritten as
and the second term of (1), the electric field amplitude of the  
mth diffraction mode E m can be written as η a tan2 k  h
Z =
 λ tan2 (k  h) + εr
kη 1 + Rm √     ∞ 
Em = − I + δm0 E in R0 (18) η a εr tan k  h 2λ kTm 1
2 y βm −j +ln + a − .
λ tan2 (k  h) + εr πaw αm m
where δm0 is the Dirac function. Here, the wave absorption is m=1

achieved through the interference of the 0th order diffraction (25)


wave and the specular reflection wave, i.e., E 0 = 0. Then, Equation (25) shows the expression of the impedance density
we have to make the incident electromagnetic wave perfectly absorbed
2 y R0 by the MG PA. It can be seen from the expression of (25) that
I = E in . (19)
η 1 + R0 the representation of the impedance density Z can be divided
into two parts: the real part and the imaginary part, i.e., Z =
The total electric field of the MG in air is
Re[Z ] + j Im[Z ], where
E xtot (y, z ≤ −h) = E xexc (y, z ≤ −h) − I Z (y, z + h). (20)
Re[Z ]
 
Meanwhile, we have E xtot (0, −h) = I Z at coordinate (0, −h), η a tan2 k  h
= (26)
where Z is the lumped impedance density of the MG. Thus, λ tan2 (k  h) + εr
we have Im[Z ]
E exc (0, −h) √     ∞ 
Z= x − Z (0, 0). (21) η a εr tan k  h 2λ kTm 1
I =− + ln + a − .
λ tan2 (k  h) + εr πaw m=1
αm m
It can be obtained that E xexc (0, −h) = E in (1 + R0 ) from (11), (27)
and then, we can derive
The value of impedance density’s real part and imaginary
E xexc (0, −h) η (1 + R0 )2 η
= = |T0 |2 (22) part of the MG for different frequency f and substrate’s
I 2 y R0 2 y height h is shown in Fig. 4, where the width of the wire
where |T0 | is the transmission coefficient’s modulus of the is chosen as w = 0.2 mm. From what can be observed in
0th order diffraction mode, whose squared value is Fig. 4, the real part of the impedance density can be zero by
 √  selecting an appropriate substrate’s height at some frequencies.
4 tan2 kh εr However, it is almost difficult to achieve zero imaginary part
|T0 | =
2
 √  . (23)
tan2 kh εr + εr of the impedance density when selecting the linewidth as
Substituting (9) and (22) into (21), the analytical expression of w = 0.2 mm. Therefore, the zero imaginary part of the
the load impedance density for the MG PA can be expressed impedance density only exists for certain linewidths, which
as will be discussed in detail later.
η η
Z = |T0 |2 − T0 III. C ONFIGURATIONS OF MG’ S PA S
2 y 2 y
  ∞  In order to validate the proposed MG PA design method-
kη y 2π Tm 1
−j ln + − (24) ology, the supercells of MG are simulated using the elec-
2π 2πr m=1
 y αm m tromagnetic simulation software HFSS by imposing periodic
boundary conditions in the x- and y-directions. The operating
where  y = λ/a, r is the radius of the metal cylindrical wire, frequency is chosen to be f = 20 GHz, and the substrate is
and |T0 |2 is the squared value of the modulus of the 0th order F4 BM300 (ε2 = 3ε0 and tan δ = 0.0007). The supercell con-
mode transmission coefficient. figuration of the MG absorber can be divided into four types,

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1836 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO. 2, FEBRUARY 2023

Fig. 6. Supercell of the MG PA with Re[Z ] = 0 and Im[Z ]  = 0. (a) Three-


dimensional view. (b) Top view. (c) Side view.

and the blue element is the microstrip capacitor made with


0.018 mm-thick copper processed by a printed circuit board
(PCB) technology. The period lengths of the supercell are
x = λ/10 = 1.5 mm and  y = λ/1.5 = 10 mm. The required
resistance of the chip resistor R can be obtained as follows:
R = Re[Z ]x (28)
and the required width of the microstrip capacitor L can be
designed from [39]
ηλ
L=    (29)
πw
4Im[Z ]εeff x ln sin 2
Fig. 4. MG absorption impedance density under different frequency f x

and substrate’s height h with metal linewidth w = 0.2 mm. (a) Real part.
(b) Imaginary part.
where εeff = (ε1 + ε2 )/2 is the effective dielectric constant.
Finally, the required resistance of the chip resistor and the
microstrip capacitor width is obtained as R = 11.747  and
L = 3.004 mm, respectively.

B. Type B Supercell With Re[Z] = 0 and Im[Z] = 0


The corresponding parameters of supercell are chosen as:
a = 1.5 and w = 0.2 mm. Using (26), the substrate’s thickness
h of the MG is calculated by fixing Re[Z ] = 0 and is given
as
1 √
h = nπ/k  = nλ/ εr , (n = 1, 2, 3, . . .). (30)
2
Fig. 5. Supercell of the MG PA with Re[Z ]  = 0 and Im[Z ]  = 0. (a) Three- Here, the relative permittivity is εr = 3 and we choose the
dimensional view. (b) Top view. (c) Side view. parameter n = 1 to make the substrate as thin as possible.
Thus, the substrate’s thickness is h = 4.330 mm, and then,
according to the impedance density of the MG: 1) Re[Z ] = the corresponding imaginary part of the impedance density
0 and Im[Z ] = 0; 2) Re[Z ] = 0 and Im[Z ] = 0; 3) Re[Z ] = can be calculated as Im[Z ] = −5.2483η/λ. The imaginary part
0 and Im[Z ] = 0; and 4) Re[Z ] = 0, Im[Z ] = 0. The period Im[Z ] is realized by a microstrip capacitor structure, and the
length of the supercell along the x-axis direction is x = configuration of the supercell is shown in Fig. 6. The periods
λ/10 and the period length of the supercell along the y-axis of the supercell are x = λ/10 = 1.5 mm and  y = λ/1.5 =
direction is  y = λ/a (a > 1). Next, we detail the specific 10 mm. The required width L = 2.275 mm of the capacitor can
design of these four types of MG supercells. be calculated by the imaginary part of the impedance density
using (29).
A. Type a Supercell With Re[Z] = 0 and Im[Z] = 0
Referring to Fig. 4, the corresponding parameters of super- C. Type C Supercell With Re[Z] = 0 and Im[Z] = 0
cell are chosen as: a = 1.5, h = 1 mm, and w = 0.2 mm. Thus, The corresponding parameters of the supercell are chosen
using (26) and (27), the real part of the impedance density can as: a = 3 and h = 2.5 mm. The wire width w of the MG is cal-
be calculated as Re[Z ] = 0.3116η/λ, and the imaginary part culated by setting Im[Z ] = 0 and can be derived from (27) as
is Im[Z ]= −3.9744η/λ. Here, the real part Re[Z ] is realized √  √ 
∞ 
2λ a εr tan kh εr kTm 1
by a chip resistor, and the imaginary part Im[Z ] is realized by w= exp  √  + a − .
a microstrip capacitor structure, as shown by the configuration πa tan2 kh εr + εr m=1 αm m
of the supercell in Fig. 5. The red element is the chip resistor, (31)

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TAN et al.: DESIGN OF PERFECT ABSORBER BASED ON METAGRATINGS: THEORY AND EXPERIMENT 1837

TABLE I
PARAMETERS OF THE F OUR T YPES OF MG PA

Fig. 7. Supercell of the MG PA with Re[Z ]  = 0 and Im[Z ] = 0. (a) Three-


dimensional view. (b) Top view. (c) Side view.

analysis of the supercells is based on an analytical model, the


full-wave simulated performances deviate slightly from the
theoretical predictions. These deviations are due to several
factors. As such, inevitable resistance of copper parts will
influence the real part of the impedance density and gaps
at components’ connections in the microstrip lines will have
Fig. 8. Supercell of the MG PA with Re [Z ] = 0 and Im [Z ] = 0. (a) Three-
dimensional view. (b) Top view. (c) Side view. an impact on the imaginary part of the impedance density.
Therefore, the supercells need to undergo some necessary
Thus, the wire width w is calculated as w = 1.251 mm, and parameter corrections. Since the designs are all based on a
the corresponding real part of the impedance density is given rigorous analytical solution, the final correction only implies
as Re[Z ] = 2.533η/λ by (26). In this case, the real part of multiplying the calculated parameters by a correction factor
the impedance density is realized by ITO (indium tin oxides) K , as listed in Table I. It can be observed that all supercells
film [20] and the configuration of the supercell is shown need some degree of correction except for the supercell
in Fig. 7. The orange part is ITO film with thickness t = Type C where no microstrip structure is used. It is worth
0.175 mm, and the period lengths of the supercell are x = mentioning that almost all deviations are only slight such that
λ/10 = 1.5 mm and  y = λ/3 = 5 mm. The required unit the correction factor K is close to 1, which highlights the
sheet resistance Z s of the ITO film can be obtained as follows: accuracy and validity of the theoretical analysis.
Z s = Re[Z ]w. (32) The four types of absorber prototypes are fabricated by
the PCB technique and the photographs of the samples are
Finally, the required unit sheet resistance is calculated as shown in Fig. 10(a), (c), (e), and (g). The dimensions of all
Z s = 79.640 /sq. four types of plates are 300 mm along the x-direction and
300 mm along the y-direction. The other specific structural
D. Type D Supercell With Re[Z] = 0 and Im[Z] = 0 parameters are detailed in Table I and Section III. For the
The corresponding parameter of the supercell is chosen as experimental tests, two horn antennas covering the operating
a = 3, the substrate’s thickness h of the MG is calculated by frequency of 20 GHz are connected to the vector network
Re[Z ] = 0 using (26), and the strip width w of the MG is analyzer and used as the feeding and receiving horn antennas,
calculated by Im[Z ] = 0 using (27). Similar to the previous as shown in Fig. 9. The horn antennas are placed on a rotatable
parts, the expression for the substrate’s thickness h and strip’s support and the distance between the horn antenna and the MG
width w is derived from (30) and (31), respectively. Finally, the sample is greater than 2.5 m to ensure that the prototypes are
parameters h and w are calculated as h = 4.330 mm and w = illuminated by a plane wave as much as possible.
3.735 mm. Here, a strip copper line is used to approximate the Finally, the simulation and measurement results are shown
superconducting conductor line with zero real and imaginary in Fig. 10(b), (d), (f), and (h). The absorbance A(ω) is
parts of the impedance density. The configuration of the expressed as A(ω) = 1 − R(ω) − T (ω), where R(ω) =
supercell is shown in Fig. 8, where the period lengths of the |S11 |2 and T (ω) = |S21 |2 are the reflection coefficient and
supercell are x = λ/10 = 1.5 mm and  y = λ/3 = 5 mm. transmission coefficient, respectively. Since the backplane of
the MG absorbers is fully copper-cladded, the electromagnetic
IV. S IMULATIONS AND M EASUREMENTS waves cannot be transmitted, i.e., T (ω) = 0. Therefore, the
Next, we verify the correctness of the proposed theoretical expression of the absorbance is simplified as
analysis. The above four types of supercells are arranged peri-
odically in HFSS software for simulation. Since the theoretical A(ω) = 1 − R(ω) = 1 − |S11 |2 . (33)

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1838 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO. 2, FEBRUARY 2023

TABLE II
VALUES OF E ACH S UPERCELL PARAMETER W HEN THE R EAL PART OF THE
I MPEDANCE D ENSITY R EACHES I TS M AXIMUM VALUE

Fig. 9. Schematic of experimental equipment and environment.

Fig. 11. (a) Trend of the real part of the impedance with a change of k2 h for
a = 3 and frequency f = 20 GHz. (b) Simulation result of the MG PA when
a = 3 and h = 2.165 mm. (c) Simulation results of the widest bandwidth
when a = 2 and a = 4.

The third type is a broadband absorption bandwidth, where


the real part of the MG load impedance is nonzero and the
imaginary part is zero. Their fractional bandwidths (absorption
rate greater than 90%) are 4.9%, 0.1%, 42.9%, and 0.1%,
corresponding to supercells Types A, B, C, and D, respectively.
Therefore, we can draw the qualitative conclusion that the
absorbing bandwidth of an MG absorber is mostly affected
by the real part of its load impedance density. Meanwhile,
the larger the proportion of the real part of the MG load
impedance in the whole load impedance, the wider is the
Fig. 10. Fabricated MG prototypes and their simulation and measure- absorption bandwidth.
ment results. (a) and (b) MG absorber with Re[Z ] = 0.3116η/λ and Next, we propose to investigate about the maximum absorp-
Im[Z ] = −3.9744η/λ. (c) and (d) MG absorber with Re[Z ] = 0 and
Im[Z ] = −5.2483η/λ. (e) and (f) MG absorber with Re[Z ] = 2.533η/λ tion bandwidth that can be achieved. From (26), we can find
and Im[Z ] = 0. (g) and (h) MG absorber with Re[Z ] = 0 and that the real part of the impedance density is only related to
Im[Z ] = 0. a, h, and εr . The parameters a and εr are determined at the
beginning, and then, only the height h has an influence on the
The simulation and measurement results are in good agree- impedance density, as shown in Fig. 11(a). It can be observed
ment and it can be seen from the results that the absorbing that for k2 h = (n + 1/2)∗ π (n = 0, 1, 2, 3, . . . . . .), the real
bandwidths of the MG PA illustrate three different results. part of the impedance density reaches its maximum value.
The first type is the narrowband absorption bandwidth, which When choosing n = 0, we can obtain h = 2.165 mm and
corresponds to the two cases where the real part of the the corresponding meta-atom parameters can be calculated by
load impedance is zero and the imaginary parts are zero (31) and (32) as w = 3.689 mm and Z s = 278.173 /sq (the
and nonzero. The second type is a conventional absorbing parameter values are given in Table II). The corresponding
bandwidth, which corresponds to the fact that neither the real simulation result is shown in Fig. 11(b) and we can see that
part nor the imaginary part of the MG load impedance is zero. the fractional bandwidth is 47.8%. Since the parameter a

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TAN et al.: DESIGN OF PERFECT ABSORBER BASED ON METAGRATINGS: THEORY AND EXPERIMENT 1839

chosen initially is 3, we move a step further and study how


the fractional bandwidth changes when a takes other values.
We calculate the parameter values for each meta-atom when
a = 2 and a = 4, as given in Table II, and simulate the
corresponding supercell structures. The simulation results are
shown in Fig. 11(c). It can be seen that when a takes different
values, there is almost no effect on the final absorption
bandwidth, and the two fractional bandwidths are 47.7% and
47.3%. Finally, we can draw the conclusion here that the
minimum and maximum absorption bandwidths of the MG PA
are 0.1% and 47.8%, respectively, around the center frequency
of 20 GHz. According to the study performed in [45], a wider
bandwidth might be possible by arranging multiple meta-
atoms with slightly different operating frequencies within a
single supercell.
In addition, we further discuss two other aspects of
the MG PA: angular independence and polarization insen-
sitivity. Before studying the absorption performance under
Fig. 12. Absorbance of MG PA with different supercells under different
oblique incidence, we need to discuss about the design of incident angles. (a) Type A. (b) Type B. (c) Type C. (d) Type D.
MG absorbers for nonnormal incidence from a theoretical
point of view. If we assume the oblique incidence angle
to be θin , the period  y needs to satisfy the condition
 y < λ/1 + sin |θin |. Therefore, the above designed Type A
and Type B supercells should operate in the angular range of
−30◦ to 30◦ while ensuring that there is only 0th diffraction
mode. For the Type C and Type D supercells, the operating
angular range is from −90◦ to 90◦ . In fact, the required
load impedance density of the meta-atoms is different for
different incidence angles, but here, we can somehow keep the
supercells with impedance density for 0◦ incidence to perform
simulations under oblique incidence so as to investigate about
the incidence sensitivity. The simulation shows that the best
angular insensitivity performance is for Type C structure,
which can maintain more than 90% absorption over the range
of −50◦ to +50◦ , as presented in Fig. 12(c) (Note that to
make the plot clearer, the vertical coordinate of Fig. 12(c)
ranges from 0.6 to 1.) The second best angular insensitivity
performance is for Type A structure, which can maintain
more than 90% absorption for the incidence range spanning
from −30◦ to 30◦ , as shown in Fig. 12(a). Finally, Type B
and Type D structures are both angle-sensitive. For Type B,
the absorption frequency decreases as the incidence angle
increases, along with a decrease in the absorption level, in
addition to an undesired absorption peak at higher frequencies
near 23 GHz, as shown in Fig. 12(b). For the Type D
structure, the absorption frequency increases as the angle of
incidence increases, while the absorption remains almost con-
stant, as shown in Fig. 12(d). Moreover, an angular absorption Fig. 13. Dual-polarization configuration of MG PA supercell. (a) Type A
(capacitor and capacitor series connection form). (b) Type A (capacitor and
performance can be broadened by exploiting the large-period inductor [39] parallel connection form). (c) Type B (capacitor and capacitor
MG configuration with multiple meta-atoms in one supercell, series connection form). (d) Type B (capacitor and inductor parallel connection
presented in [46], to suppress multiple MG diffraction modes. form). (e) Type C. (f) Type D.
The above MG absorbers are designed to operate under a
single polarization (x-polarization). However, if we wish to absorption designs. For the meta-atoms in Type A and Type B
consider dual-polarization features (x- and y- polarizations), supercells, the original single strip capacitor needs to be
the size of the supercell has to be changed from x = λ/10 and replaced by multiple strip capacitors in series or strip capacitor
 y = λ/a to x =  y = λ/a, as shown in Fig. 13, in which in parallel with strip inductor to achieve the required small
case the meta-atoms in Type C and Type D supercells can capacitance due to the large size of the supercell [the load
be directly arranged orthogonally to achieve dual-polarization impedance of the meta-atom changes from Z load = Z · x to

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1840 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO. 2, FEBRUARY 2023

Z load = Z ·  y , when referring to (29)]. The parameters of the where y and z + h are not both zero. When taking y = 0 and
meta-atoms in the dual-polarization supercell can be obtained z + h = 0, (34) is written as
by parameter correction through simulations while taking the ∞ +∞
parameters of meta-atoms in the single-polarization supercell kη  (2)   kη  Rm
Z (0, 0) = H0 k|n y | + . (35)
as the baseline. Since the analytical methodology proposed in 4 n=−∞ 2 y m=−∞ βm
this article mainly considers the design of single-polarization
MG PA, the specific design of dual-polarization MG PA is In this case, when n = 0, the Hankel function H0(2)(k|n y |) =
not detailed here. Compared to conventional metamaterial/ 1 + j ∞ obviously is not convergent. Studies show that
metasurface absorbers that have been developed for over a H0(2)(|x|) is convergent when the value of x is small, e.g.,
decade, MG absorbers are still at an early stage of research H0(2)(10−10 ) = 1 + j 14.7325. In fact, the problem here is
and development in terms of physics, design, and practical not just a mathematical problem but a specific design to the
implementation. More works are still needed to address the metal wire array. Thus, we use the position on the surface of
issues of angular independence, polarization insensitivity, and the metal wire instead of the actual position of (y, z + h) =
bandwidth expansion of MG absorbers. (0, 0), and here, we use H0(2)(kr ) to approximately replace
Finally, it is worth mentioning that the design methodology H0(2)(k|n y |) with n = 0, where r is the radius of the metal
of MG PA is applicable to any frequency, and this work only wire. Then, (35) is modified as
randomly selects the design frequency of 20 GHz. It should
be noted that although the thickness h of Type A and Type C kη (2)
Z (0, 0) = H (kr )
supercells can be freely chosen, a good tradeoff has to be made 4 0
∞ +∞
between the latter thickness and the absorption level. When h kη  (2)   kη  Rm
takes too small values, the real part of the impedance is also + H0 kn y + . (36)
2 n=1 2 y m=−∞ βm
relatively small, and the MG cannot achieve the expected wave
absorption effect. In addition, in the selected design frequency, According to the series expansion of Hankel function using
the absorption bandwidth coverage from narrowband to wide- the small argument approximation [37], [49], we have
band can also be achieved by selecting different supercells  
(2) 2 kr
of MG. Therefore, no matter the absorption frequency or the H0 (kr ) = 1 − j ln +γ (37)
absorption bandwidth, the MG absorber presents a high degree π 2
 ∞  
of flexibility. 1 1 j 4π
H0(2) (nk A) = − + γ − ln
n=1
k y 2 π k y
V. C ONCLUSION ∞ 
j  2π 1
An analytical design methodology for PA based on MG has + − (38)
been proposed in this article, and the exact analytical formula π m=1  y αm m
of the impedance density of MG has been derived to achieve
the design. The systematic analysis and detailed design process where γ is the Euler constant and αm = (ξm2 − k 2 )1/2 = jβm .
have also been given, and the MG PA composed of four differ- Substituting (37) and (38) into (36) yields
ent supercells has been discussed and analyzed. The PA design   ∞ 
η kη y 2π Tm 1
based on MG has a very diverse absorption bandwidth, which Z (0, 0) = T0 + j ln + − .
2 y 2π 2πr  y αm m
can cover the range from narrowband to wideband. In addition, m=1
since the imaginary part of the impedance density of the PA (39)
is negative, it can be implemented directly with capacitive
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Zhen Tan (Graduate Student Member, IEEE)
[27] Z. Luo, S. Ji, J. Zhao, H. Dai, and C. Jiang, “Design and analysis received the B.S. and M.S. degrees in electronic
of an ultra-thin dual-band wide-angle polarization-insensitive metama- science and technology from Nantong University,
terial absorber for C-band application,” Optik, vol. 243, Oct. 2021,
Nantong, Jiangsu, China, in 2017 and 2020, respec-
Art. no. 166785. tively. He is currently pursuing the Ph.D. degree
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vol. 7, no. 3, Feb. 2019, Art. no. 1800995. Jiaotong University, Xi’an, China.
[29] D. Li, J. Yang, X. Wang, T. Wang, and R. Gong, “Ultrabroadband His current research interests include the the-
metamaterial absorber based on effectively coupled multilayer HIS ory and design of metagratings, metasurfaces, and
loaded structure with Dallenbach layer,” IEEE Trans. Microw. Theory dielectric resonators.
Techn., vol. 70, no. 1, pp. 232–238, Jan. 2022.

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1842 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 71, NO. 2, FEBRUARY 2023

Jianjia Yi (Member, IEEE) received the B.S. degree Shah Nawaz Burokur (Senior Member, IEEE)
in electrical engineering from the Harbin Institute received the Ph.D. degree from the Université de
of Technology, Harbin, China, in 2009, the M.S. Nantes, Nantes, France, in 2005.
degree in telecommunication engineering from the He is currently an Associate Professor with
Politecnico di Torino, Turin, Italy, in 2012, and Université Paris Nanterre, Ville-d’Avray, France,
the Ph.D. degree in physics from the University of where he carries his research activities at the
Paris-Saclay, Paris, France, in 2015. Laboratoire Energétique Mécanique Electromag-
From 2016 to 2019, he was an Associate Pro- nétisme (LEME), a multidisciplinary laboratory in
fessor with the State Key Laboratory of Integrated energetics, mechanics, and electromagnetics. He has
Services Networks, School of Telecommunications authored or coauthored one book on transformation
Engineering, Xidian University, Xi’an, China. He is optics-based antennas, seven book chapters, and
currently an Associate Professor with Xi’an Jiaotong University, Xi’an. He has more than 150 articles in scientific journals. He holds three patents on
coauthored two book chapters and more than 60 papers in peer-reviewed inter- metamaterial-based and metamaterial-inspired antennas. His current research
national journals and conference proceedings. His research interests include interests are in the areas of periodic structures, complex media, metamaterials,
theoretical and computational electromagnetics with applications to antenna metasurfaces, and metagratings, in the analysis of integrated planar and con-
theory and design, antennas, frequency-selective surfaces, transmitarray, and formal circuits, antennas, sensors, orbital angular momentum, and holographic
metagratings. imaging.
Dr. Burokur was a recipient of the Young Scientist Award, presented by
the Union Radio-Scientifique Internationale (URSI) Commission B, in 2005.
He has served as an editorial board member and a reviewer for various
journals. On a national level in France, he is the co-coordinator of a think tank
Qiang Cheng (Senior Member, IEEE) received the on new antenna concepts involving new technologies, such as metamaterials
B.S. and M.S. degrees from the Nanjing University and metasurfaces, in the framework of the French GDR Ondes.
of Aeronautics and Astronautics, Nanjing, China, in
2001 and 2004, respectively, and the Ph.D. degree
from Southeast University, Nanjing, in 2008.
In 2008, he joined the State Key Laboratory of
Millimeter Waves, Southeast University, where he
was involved in the development of metamaterials
and metadevices. He is currently a Full Professor
with the School of Information Science and Engi-
neering, Southeast University. He leads a group of
Ph.D. students and master’s students in the areas of metamaterials, tunable
microwave circuits, microwave imaging, and terahertz systems. He has
authored or coauthored more than 100 publications, with citations of more
than 2000 times.
Dr. Cheng was a recipient of the 2010 Best Paper Award from the New
Journal of Physics, the China’s Top Ten Scientific Advances of 2010, and the
Second Class National Natural Science Award in 2014. He has served as the
Vice-Chair for the 2008 and 2010 International Workshop on Metamaterials.

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