www.

covenantuniversity

Raising a new Generation of Leaders

INTRODUCTION TO
ELECTRICAL ENGINEERING I

MODULE 4

PREPARED BY
Engr. AJILORE. A.A
GEC211 – INTRODUCTION TO
ELECTRICAL ENGINEERING I
 Lecturer: Engr. Ajilore. A.A

 Office Address: EIE, ground floor (G126)

 Mobile line: +2348062546075

 Mail address: [email protected]

2
2
CLASS BEHAVIOUR
Please, note the following:
 Mandatory 75% class attendance
 Noise making during lectures is prohibited.
 Active participation in all activities is a MUST
 All class assignments to be submitted as when due.
 Punctuality to classes is a MUST.
 Time for lectures is between 8 and 10 am.
 Please note that, once it is 8 am, no student will be
allowed to enter the lecture hall.

3
3
LEARNING STRATEGIES :
The under-listed methods will be adopted to enable
students learn the content and skills inherent in
this course :
 Lecture via power point presentations,
 Class Tutorials
 Group discussions
 Assignments.

4
4
EVALUATION TECHNIQUE
Grading:
• 15% first test
• 15% mid-term test and
• 70% final examination

5
5
 RECOMMENDED TEXTBOOKS

• Fundamental of Electric Circuits (5th Edition) by

Charles K. Alexander and Matthew N.O. Sadiku
• Electrical Circuit Theory and Technology (Revised
2nd Edition) by John Bird

6
6
MODULE FOUR

7
1. Introduction to Transistors
2. Transistors configuration and their
characteristics
3. Transistors region of Operation
4. Types of Transistors
 Lecture 2

INTRODUCTION TO TRANSISTORS
 4.1 Introduction
What is a Transistor?
A transistor is a type of semiconductor device that can be used to conduct and insulate
electric current or voltage. A transistor basically acts as a switch and an amplifier. In simple
words, we can say that a transistor is a miniature device that is used to control or regulate the
flow of electronic signals. A transistor is a three terminal semiconductor device that
regulates current or voltage flow and acts as a switch or gate for signals.
Constructional Details of a Transistor
The Transistor is a three terminal solid state device which is formed by connecting two
diodes back to back. Hence it has got two PN junctions. Three terminals are drawn out of
the three semiconductor materials present in it. This type of connection offers two types of
transistors. They are PNP and NPN which means an N-type material between two P-types
and the other is a P-type material between two N-types respectively.
• The construction of transistors is as shown in the
following figure which explains the idea discussed
above.
 Parts of a Transistor

A typical transistor is composed of three layers of semiconductor materials or, more

specifically, terminals which help to make a connection to an external circuit and carry

the current. A voltage or current that is applied to any one pair of the terminals of a

transistor controls the current through the other pair of terminals. There are three

terminals for a transistor. They are listed below:

Base: This is used to activate the transistor.

Collector: It is the positive lead of the transistor.

Emitter: It is the negative lead of the transistor.

Emitter

This has a moderate size and is heavily doped as its main function is to supply a number

of majority carriers, i.e. either electrons or holes. As this emits electrons, it is called as an

Emitter. This is simply indicated with the letter E.

Base

This is thin and lightly doped. Its main function is to pass the majority carriers from the

emitter to the collector. This is indicated by the letter B.

Collector

Its name implies its function of collecting the carriers. This is a bit larger in size than

emitter and base. It is moderately doped. This is indicated by the letter C.

The symbols of PNP and NPN transistors are as
shown below.
The arrow-head in the above figures indicated the emitter of a transistor. As the

collector of a transistor has to dissipate much greater power, it is made large. Due to the

specific functions of emitter and collector, they are not interchangeable. Hence the

terminals are always to be kept in mind while using a transistor.

Transistor Biasing
As we know that a transistor is a combination of two diodes, we have two junctions

here. As one junction is between the emitter and base, that is called as Emitter-Base

junction and likewise, the other is Collector-Base junction.

By having a look at the above figure, it is understood that:

The N-type material is provided negative supply and P-type material is given positive supply to

make the circuit Forward bias.

The N-type material is provided positive supply and P-type material is given negative supply to

make the circuit Reverse bias.

By applying the power, the emitter base junction is always forward biased as the emitter

resistance is very small. The collector base junction is reverse biased and its resistance is a bit

higher. A small forward bias is sufficient at the emitter junction whereas a high reverse bias has

to be applied at the collector junction.

The direction of current indicated in the circuits above, also called as the Conventional

Current, is the movement of hole current which is opposite to the electron current.
Advantages of Transistors

 High voltage gain.

 Lower supply voltage is sufficient.

 Most suitable for low power applications.

 Smaller and lighter in weight.

 Mechanically stronger than vacuum tubes.

 No external heating required like vacuum tubes.

 Very suitable to integrate with resistors and diodes to produce ICs.

 There are few disadvantages such as they cannot be used for high power applications

due to lower power dissipation. They have lower input impedance and they are

temperature dependent.
4.2 Transistor Configurations and their characteristics

A Transistor has 3 terminals, the emitter, the base and the collector. Using these 3 terminals

the transistor can be connected in a circuit with one terminal common to both input and

output in a 3 different possible configurations.

The three types of configurations are Common Base, Common Emitter and Common

Collector configurations. In every configuration, the emitter junction is forward biased and

the collector junction is reverse biased.

Common Base CB Configuration

The name itself implies that the Base terminal is taken as common terminal for both input

and output of the transistor. The common base connection for both NPN and PNP transistors

is as shown in the following figure.

For the sake of understanding, let us consider NPN transistor in CB configuration. When the

emitter voltage is applied, as it is forward biased, the electrons from the negative terminal repel

the emitter electrons and current flows through the emitter and base to the collector to

contribute collector current. The collector voltage VCB is kept constant throughout this.

In the CB configuration, the input current is the emitter current IE and the output current is the

collector current IC.

Current Amplification Factor α

The ratio of change in collector current ΔIC to the change in emitter current ΔIE when collector

voltage VCB is kept constant, is called as Current amplification factor. It is denoted by α.

𝛥𝐼
𝛼 = 𝛥𝐼𝐶 at constant VCB
𝐸
Expression for Collector current

With the idea above, let us try to draw some expression for collector current. Along with the

emitter current flowing, there is some amount of base current IB which flows through the base

terminal due to electron hole recombination. As collector-base junction is reverse biased, there

is another current which is flown due to minority charge carriers. This is the leakage current

which can be understood as Ileakage. This is due to minority charge carriers and hence very

small.
Hence the above derived is the expression for collector current. The value of collector

current depends on base current and leakage current along with the current amplification

factor of that transistor in use.

Characteristics of CB configuration

 This configuration provides voltage gain but no current gain.

 Being VCB constant, with a small increase in the Emitter-base voltage VEB, Emitter

current IE gets increased.

 Emitter Current IE is independent of Collector voltage VCB.

 Collector Voltage VCB can affect the collector current IC only at low voltages, when

VEB is kept constant.

 The input resistance ri is the ratio of change in emitter-base voltage ΔVEB to the change

in emitter current ΔIE at constant collector base voltage VCB.

𝛥𝑉𝐶𝐵
𝜂= at constant VCB
𝛥𝐼𝐸
 As the input resistance is of very low value, a small value of VEB is enough to produce a

large current flow of emitter current IE.

 The output resistance ro is the ratio of change in the collector base voltage ΔVCB to the

change in collector current ΔIC at constant emitter current IE.

𝛥𝑉𝐶𝐵
ro= at constant lE
𝛥𝐼𝑐

 As the output resistance is of very high value, a large change in VCB produces a very little

change in collector current IC.

 This Configuration provides good stability against increase in temperature.

 The CB configuration is used for high frequency applications.

Common Emitter CE Configuration

The name itself implies that the Emitter terminal is taken as common terminal for both input

and output of the transistor. The common emitter connection for both NPN and PNP transistors

is as shown in the following figure.

Just as in CB configuration, the emitter junction is forward biased and the collector

junction is reverse biased. The flow of electrons is controlled in the same manner. The

input current is the base current IB and the output current is the collector current IC here.

Base Current Amplification factor β

The ratio of change in collector current ΔIC to the change in base current ΔIB is known

as Base Current Amplification Factor. It is denoted by β

𝛥𝐼𝐶
𝛽=
𝛥𝐼𝐵
Relation between β and α

Let us try to derive the relation between base current amplification factor and emitter current
amplification factor.
𝛥𝐼𝐶
𝛽=
𝛥𝐼𝐵
𝛥𝐼𝐶
𝛼=
𝛥𝐼𝐸
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
𝛥𝐼𝐸 = 𝛥𝐼𝐵 + 𝛥𝐼𝐶
𝛥𝐼𝐵 = 𝛥𝐼𝐸 − 𝛥𝐼𝐶
𝛥𝐼𝐶
𝑆𝑢𝑏𝑡𝑖𝑢𝑡𝑒 𝛥𝐼𝐵 𝑖𝑛 𝑒𝑞𝑢𝑎𝑡𝑖𝑜𝑛 𝛽 =
𝛥𝐼𝐵
𝛥𝐼𝐶
𝛽=
𝛥𝐼𝐸 − 𝛥𝐼𝐶
𝐷𝑖𝑣𝑖𝑑𝑒 𝑡ℎ𝑟𝑜𝑢𝑔ℎ 𝑏𝑦 𝛥𝐼𝐸
𝐼𝐶
𝛥𝐼𝐸
𝛽=
𝛥𝐼𝐸 𝛥𝐼𝐶
𝛥𝐼𝐸 − 𝛥𝐼𝐸
𝛥𝐼𝐶
𝛼=
𝛥𝐼𝐸
𝛥𝐼𝐶
𝑠𝑢𝑏𝑡𝑢𝑖𝑡𝑒 𝛼 = 𝑖𝑛𝑡𝑜 𝛽
𝛥𝐼𝐸
Tℎ𝑒𝑟𝑒𝑓𝑜𝑟𝑒 ,
𝛼
𝛽=
1−𝛼

From the above equation, it is evident that, as α approaches 1, β reaches infinity.

Hence, the current gain in Common Emitter connection is very high. This is the reason
this circuit connection is mostly used in all transistor applications.
Expression for Collector Current

In the Common Emitter configuration, IB is the input current and IC is the output current.
Characteristics of CE Configuration

 This configuration provides good current gain and voltage gain.

 Keeping VCE constant, with a small increase in VBE the base current IB increases rapidly

than in CB configurations.

 For any value of VCE above knee voltage, IC is approximately equal to βIB.

 The input resistance ri is the ratio of change in base emitter voltage ΔVBE to the change in

base current ΔIB at constant collector emitter voltage VCE.

𝛥𝑉𝐵𝐸
ri= at constant VCE
𝛥𝐼𝐵
 As the input resistance is of very low value, a small value of VBE is enough to produce a

large current flow of base current IB.

 The output resistance rO is the ratio of change in collector emitter voltage ΔVCE to the

change in collector current ΔIC at constant IB.

𝛥𝑉𝐶𝐵
ro= at constant IB
𝛥𝐼𝑐

 As the output resistance of CE circuit is less than that of CB circuit.

 This configuration is usually used for bias stabilization methods and audio frequency

applications.
Common Collector CC Configuration

The name itself implies that the Collector terminal is taken as common terminal for both

input and output of the transistor. The common collector connection for both NPN and PNP

transistors is as shown in the following figure.

Just as in CB and CE configurations, the emitter junction is forward biased and the

collector junction is reverse biased. The flow of electrons is controlled in the same manner.

The input current is the base current IB and the output current is the emitter current IE here.

Current Amplification Factor γ

The ratio of change in emitter current ΔIE to the change in base current ΔIB is known

as Current Amplification factor in common collector CC configuration. It is denoted

by γ.
𝛥𝐼𝐸
𝛾=
𝛥𝐼𝐵
 The current gain in CC configuration is same as in CE configuration.

 The voltage gain in CC configuration is always less than 1.

Relation between γ and α
𝛥𝐼𝐸
𝛾=
𝛥𝐼𝐵
𝛥𝐼𝐶
𝛼=
𝛥𝐼𝐸
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
𝛥𝐼𝐸 = 𝛥𝐼𝐵 + 𝛥𝐼𝐶
𝛥𝐼𝐵 = 𝛥𝐼𝐸 − 𝛥𝐼𝐶
𝛥𝐼𝐸
𝑆𝑢𝑏𝑡𝑖𝑢𝑡𝑒 𝐼𝐵 𝑖𝑛 𝑒𝑞𝑢𝑎𝑡𝑖𝑜𝑛 𝛾 =
𝛥𝐼𝐵
𝛥𝐼𝐸
𝛾=
𝛥𝐼𝐸 − 𝛥𝐼𝐶
𝐷𝑖𝑣𝑖𝑑𝑒 𝑏𝑦 𝛥𝐼𝐸
 𝐼𝐸
𝛥𝐼𝐸
=
𝛥𝐼𝐸 𝛥𝐼𝐶
𝛥𝐼𝐸 − 𝛥𝐼𝐸
𝛥𝐼𝐶
𝛼=
𝛥𝐼𝐸
𝛥𝐼𝐶
𝑠𝑢𝑏𝑡𝑢𝑖𝑡𝑒 𝛼 = 𝑖𝑛𝑡𝑜 𝛾
𝛥𝐼𝐸
Tℎ𝑒𝑟𝑒𝑓𝑜𝑟𝑒 ,
1
𝛾=
1−𝛼
Characteristics of CC Configuration
 This configuration provides current gain but no voltage gain.

 In CC configuration, the input resistance is high and the output resistance is low.

 The voltage gain provided by this circuit is less than 1.

 The sum of collector current and base current equals emitter current.

 The input and output signals are in phase.

 This configuration works as non-inverting amplifier output.

• This circuit is mostly used for impedance matching. That means, to drive a low
impedance load from a high impedance source.
4.3 Transistor Regions of Operation
The supply of suitable external dc voltage is called as biasing. Either forward or reverse

biasing is done to the emitter and collector junctions of the transistor. These biasing methods

make the transistor circuit to work in four kinds of regions such as Active region, Saturation

region, Cutoff region and Inverse active region seldom used. This is understood by having a

look at the following table.

EMITTER JUNCTION COLLECTOR JUNCTION REGION OF OPERATION

Forward biased Forward biased Saturation region

Forward biased Reverse biased Active region

Reverse biased Forward biased Inverse active region

Reverse biased Reverse biased Cutoff region

Among these regions, Inverse active region, which is just the inverse of active region, is

not suitable for any applications and hence not used.

Active region
This is the region in which transistors have many applications. This is also called

as linear region. A transistor while in this region, acts better as an Amplifier.

This region lies between saturation and cutoff. The transistor operates in active region

when the emitter junction is forward biased and collector junction is reverse biased. In the

active state, collector current is β times the base current, i.e.,

IC=βIB

Where,

IC = collector current

β = current amplification factor

IB= base current

Saturation region

This is the region in which transistor tends to behave as a closed switch. The transistor has the

effect of its collector and Emitter being shorted. The collector and Emitter currents are

maximum in this mode of operation.

The figure below shows a transistor working in saturation region.

The transistor operates in saturation region when both the emitter and collector junctions are

forward biased. As it is understood that, in the saturation region the transistor tends to behave

as a closed switch, we can say that,

IC=IE

Where IC = collector current and IE = emitter current.

Cutoff region

This is the region in which transistor tends to behave as an open switch. The transistor has the

effect of its collector and base being opened. The collector, emitter and base currents are all

zero in this mode of operation.

The following figure shows a transistor working in cutoff region.

The transistor operates in cutoff region when both the emitter and collector junctions are reverse

biased. As in cutoff region, the collector current, emitter current and base currents are nil, we

can write as

IC=IE=IB=0

Where IC= collector current, IE = emitter current, and IB = base current.

Transistor Load Line Analysis
Till now we have discussed different regions of operation for a transistor. But among all these

regions, we have found that the transistor operates well in active region and hence it is also

called as linear region. The outputs of the transistor are the collector current and collector

voltages.

Output Characteristics
When the output characteristics of a transistor are considered, the curve looks as below for

different input values.

In the above figure, the output characteristics are drawn between collector current IC and

collector voltage VCE for different values of base current IB. These are considered here

for different input values to obtain different output curves.

Operating point

When a value for the maximum possible collector current is considered, that point will be

present on the Y-axis, which is nothing but the saturation point. As well, when a value for

the maximum possible collector emitter voltage is considered, that point will be present on

the X-axis, which is the cutoff point.

When a line is drawn joining these two points, such a line can be called as Load line. This is

called so as it symbolizes the output at the load. This line, when drawn over the output

characteristic curve, makes contact at a point called as Operating point.

This operating point is also called as quiescent point or simply Q-point. There can be many

such intersecting points, but the Q-point is selected in such a way that irrespective of AC

signal swing, the transistor remains in active region. This can be better understood through

the figure below.

4.4 Types of Transistors
There are many types of transistors in use. Each transistor is specialized in its application.

The main classification is as follows.

The primary transistor is the BJT and FET is the modern version of transistor. Let us have a

look at the BJTs.

Bipolar Junction Transistor

A Bipolar junction transistor, shortly termed as BJT is called so as it has two PN junctions for

its function. This BJT is nothing but a normal transistor. It has got two types of

configurations NPN and PNP. Usually NPN transistor is preferred for the sake of convenience.

The following image shows how a practical BJT looks like.

The types of BJT are NPN and PNP transistors. The NPN transistor is made by placing a ptype

material between two n-type materials. The PNP transistor is made by placing an ntype

material between two p-type materials.

 BJT is a current controlled device. A normal transistor which we had discussed in the previous

chapters come under this category. The functionality, configurations and applications are all the

same.

Field Effect Transistor

An FET is a three-terminal unipolar semiconductor device. It is a voltage controlled

device unlike a bipolar junction transistor. The main advantage of FET is that it has a very high

input impedance, which is in the order of Mega Ohms. It has many advantages like low power

consumption, low heat dissipation and FETs are highly efficient devices. The following image

shows how a practical FET looks like.

The FET is a unipolar device, which means that it is made using either p-type or n-type

material as main substrate. Hence the current conduction of a FET is done by either

electrons or holes.
Features of FET
The following are the varied features of a Field Effect Transistor.

 Unipolar − It is unipolar as either holes or electrons are responsible for conduction.

 High input impedance − The input current in a FET flows due to the reverse bias. Hence it

has high input impedance.

 Voltage controlled device − As the output voltage of a FET is controlled by the gate input

voltage, FET is called as the voltage controlled device.

 Noise is low − There are no junctions present in the conduction path. Hence noise is lower

than in BJTs.

 Gain is characterized as transconductance. Transconductance is the ratio of change in

output current to the change in input voltage.

 The output impedance of a FET is low.

Advantages of FET

To prefer a FET over BJT, there should be few advantages of using FETs, rather than BJTs. Let

us try to summarize the advantages of FET over BJT.

JFET BJT

It is an unipolar device It is a bipolar device

Voltage driven device Current driven device

High input impedance Low input impedance

Low noise level High noise level

Better thermal stability Less thermal stability

Gain is characterized by transconductance Gain is characterized by voltage gain

Applications of FET

 FET is used in circuits to reduce the loading effect.

 FETs are used in many circuits such as Buffer Amplifier, Phase shift Oscillators and

Voltmeters.

FET Terminals

Though FET is a three terminal device, they are not the same as BJT terminals. The three

terminals of FET are Gate, Source and Drain. The Source terminal in FET is analogous to the

Emitter in BJT, while Gate is analogous to Base and Drain to Collector.

The symbols of a FET for both NPN and PNP types are as shown below
Source

 The Source terminal in a Field Effect Transistor is the one through which the carriers

enter the channel.

 This is analogous to the emitter terminal in a Bipolar Junction Transistor.

 The Source terminal can be designated as S.

 The current entering the channel at Source terminal is indicated as IS.

Gate

 The Gate terminal in a Field Effect Transistor plays a key role in the function of

FET by controlling the current through the channel.

 By applying an external voltage at Gate terminal, the current through it can be

controlled.

 Gate is a combination of two terminals connected internally that are heavily doped.

 The channel conductivity is said to be modulated by the Gate terminal.

 This is analogous to the base terminal in a Bipolar Junction Transistor.

 The Gate terminal can be designated as G.

 The current entering the channel at Gate terminal is indicated as IG.

Drain

 The Drain terminal in a Field Effect Transistor is the one through which the carriers

leave the channel.

 This is analogous to the collector terminal in a Bipolar Junction Transistor.

 The Drain to Source voltage is designated as VDS.

 The Drain terminal can be designated as D.

 The current leaving the channel at Drain terminal is indicated as ID.

Types of FET

There are two main types of FETS. They are JFET and MOSFET. The following figure gives

further classification of FETs.

JFET

The JFET is abbreviated as Junction Field Effect Transistor. JFET is just like a normal FET.

The types of JFET are n-channel FET and P-channel FET. A p-type material is added to the n-

type substrate in n-channel FET, whereas an n-type material is added to the p-type substrate in

p-channel FET.

N-Channel FET

The N-channel FET is the mostly used Field Effect Transistor. For the fabrication of N-channel

FET, a narrow bar of N-type semiconductor is taken on which P-type material is formed by

diffusion on the opposite sides. These two sides are joined to draw a single connection for gate

terminal.
Depletion Mode of Operation

As the width of depletion layer plays an important role in the operation of FET, the name

depletion mode of operation implies. We have another mode called enhancement mode of

operation, which will be discussed in the operation of MOSFETs. But JFETs have only

depletion mode of operation.

Let us consider that there is no potential applied between gate and source terminals and a

potential VDD is applied between drain and source. Now, a current ID flows from drain to source

terminal, at its maximum as the channel width is more. Let the voltage applied between gate

and source terminal VGG is reverse biased. This increases the depletion width, as discussed

above. As the layers grow, the cross-section of the channel decreases and hence the drain

current ID also decreases.

When this drain current is further increased, a stage occurs where both the depletion layers

touch each other, and prevent the current ID flow. This is clearly shown in the following

figure.
The voltage at which both these depletion layers literally “touch” is called as “Pinch off

voltage”. It is indicated as VP. The drain current is literally nil at this point. Hence the

drain current is a function of reverse bias voltage at gate.

Since gate voltage controls the drain current, FET is called as the voltage controlled

device. This is more clearly understood from the drain characteristics curve.

Drain Characteristics of JFET

Let us try to summarize the function of FET through which we can obtain the characteristic

curve for drain of FET. The circuit of FET to obtain these characteristics is given below.
When the voltage between gate and source VGS is zero, or they are shorted, the current ID from

source to drain is also nil as there is no VDS applied. As the voltage between drain and

source VDS is increased, the current flow ID from source to drain increases. This increase in

current is linear up to a certain point A, known as Knee Voltage.

The gate terminals will be under reverse biased condition and as ID increases, the depletion

regions tend to constrict. This constriction is unequal in length making these regions come

closer at drain and farther at drain, which leads to pinch off voltage. The pinch off voltage is

defined as the minimum drain to source voltage where the drain current approaches a constant

value saturation value. The point at which this pinch off voltage occurs is called as Pinch off

point, denoted as B.
As VDS is further increased, the channel resistance also increases in such a way

that ID practically remains constant. The region BC is known as saturation region or amplifier

region. All these along with the points A, B and C are plotted in the graph below.
The drain characteristics are plotted for drain current ID against drain source voltage VDS for

different values of gate source voltage VGS. The overall drain characteristics for such various

input voltages is as given under.

As the negative gate voltage controls the drain current, FET is called as a Voltage

controlled device. The drain characteristics indicate the performance of a FET. The drain

characteristics plotted above are used to obtain the values of Drain resistance,

Transconductance and Amplification Factor.

MOSFET

FETs have a few disadvantages like high drain resistance, moderate input impedance and

slower operation. To overcome these disadvantages, the MOSFET which is an advanced FET

is invented.

MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide

Semiconductor Field Effect Transistor. This is also called as IGFET meaning Insulated Gate

Field Effect Transistor. The FET is operated in both depletion and enhancement modes of

operation. The following figure shows how a practical MOSFET looks like.
Construction of a MOSFET

The construction of a MOSFET is a bit similar to the FET. An oxide layer is deposited on the

substrate to which the gate terminal is connected. This oxide layer acts as an insulator

(sio2 insulates from the substrate), and hence the MOSFET has another name as IGFET. In the

construction of MOSFET, a lightly doped substrate, is diffused with a heavily doped region.

Depending upon the substrate used, they are called as P-type and N-type MOSFETs.
Classification of MOSFETs

Depending upon the type of materials used in the construction, and the type of operation, the

MOSFETs are classified as in the following figure.

After the classification, let us go through the symbols of MOSFET.

The N-channel MOSFETs are simply called as NMOS. The symbols for N-channel MOSFET

are as given below.

The P-channel MOSFETs are simply called as PMOS. The symbols for P-channel

MOSFET are as given below.

Working of PMOS

When the gate terminal is given a negative potential at VGG than the drain source voltage VDD,

then due to the P+ regions present, the hole current is increased through the diffused P

channel and the PMOS works in Enhancement Mode.

When the gate terminal is given a positive potential at VGG than the drain source voltage VDD,

then due to the repulsion, the depletion occurs due to which the flow of current reduces. Thus

PMOS works in Depletion Mode. Though the construction differs, the working is similar in

both the type of MOSFETs. Hence with the change in voltage polarity both of the types can

be used in both the modes.

This can be better understood by having an idea on the drain characteristics curve.
Drain Characteristics

The drain characteristics of a MOSFET are drawn between the drain current ID and the drain

source voltage VDS. The characteristic curve is as shown below for different values of inputs.
Actually when VDS is increased, the drain current ID should increase, but due to the

applied VGS, the drain current is controlled at certain level. Hence the gate current controls the

output drain current.

Transfer Characteristics

Transfer characteristics define the change in the value of VDS with the change in ID and VGS in

both depletion and enhancement modes. The below transfer characteristic curve is drawn for

drain current versus gate to source voltage.

 Comparison between BJT, FET and MOSFET
Now that we have discussed all the above three, let us try to compare some of their properties.

TERMS BJT FET MOSFET

Device type Current controlled Voltage controlled Voltage Controlled

Current flow Bipolar Unipolar Unipolar

Terminals Not interchangeable Interchangeable Interchangeable

Both Enhancement and

Operational modes No modes Depletion mode only
Depletion modes

Input impedance Low High Very high

Output resistance Moderate Moderate Low

Operational speed Low Moderate High

Noise High Low Low

Thermal stability Low Better High

 Assignment

1. Discuss extensively on Transistors configuration and

their characteristics

2. Discuss the three mode of transistor region of

operations
ANY QUESTION?