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ChangJiang BC337_BC327

The document provides specifications for TO-92 plastic-encapsulated NPN transistors BC337 and BC338, detailing their electrical characteristics, including power dissipation, collector current, and breakdown voltages. It lists parameters such as collector-emitter saturation voltage, DC current gain, and transition frequency, along with their respective values. The operating temperature range for these transistors is -55℃ to +150℃.

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Riel Aiv
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4 views1 page

ChangJiang BC337_BC327

The document provides specifications for TO-92 plastic-encapsulated NPN transistors BC337 and BC338, detailing their electrical characteristics, including power dissipation, collector current, and breakdown voltages. It lists parameters such as collector-emitter saturation voltage, DC current gain, and transition frequency, along with their respective values. The operating temperature range for these transistors is -55℃ to +150℃.

Uploaded by

Riel Aiv
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

BC337,-16,-25,-40 TRANSISTOR (NPN)

BC338, -16,-25,-40 TO-92

FEATURES
1. COLLECTOR
Power dissipation
2. BASE
PCM: 0.625 W (Tamb=25℃)
3. EMITTER
Collector current
ICM: 0.8 A 1 2 3
Collector-base voltage
VCBO: BC337 50 V
BC338 30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage VCBO Ic= 100µA, IE=0


BC337 50 V
BC338 30 V
Collector-emitter breakdown voltage IC= 10 mA , IB=0
BC337 VCEO 45 V
BC338 25 V

Emitter-base breakdown voltage VEBO IE= 10µA, IC=0 5 V

Collector cut-off current ICBO


BC337 VCB= 45 V, IE=0 0.1 µA
BC338 VCB= 25V, IE=0 0.1 µA
Collector cut-off current
BC337 ICEO VCE= 40 V, IB=0 0.2 µA
BC338 VCE= 20 V, IB=0 0.2 µA

Emitter cut-off current IEBO VEB= 4 V, IC=0 0.1 µA

DC current gain
BC337/BC338 100 630
hFE(1) VCE=1V, IC= 100mA
BC337-16/BC338-16 100 250
BC337-25/BC338-25 160 400
BC337-40/BC338-40 250 630
HFE(2) VCE=1V, IC= 300mA 60

Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50 mA 0.7 V

Base-emitter saturation voltage VBE(sat) IC= 500 mA, IB=50 mA 1.2 V

VCE= 5V, IC= 10mA


Transition frequency fT 210 MHz
f = 100MHz

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