Punjab Tianjin University of Technology

Department of Electrical Engineering

Electronic devices
Lab Report of Practical # 02
Title:
Study Of Semiconductor Diode Characteristics

Submitted By:
Zohaib Khan 18(F) ET025
Awais Shakir 18(F) ET026
Date of Submission:
23-09-2019
 Study of semiconductor Diode characteristics
Objective:
To observe and draw the Forward and Reverse bias V-I Characteristics of
a P-N Junction diode.

Equipment:

 P-N Diode
 Regulated Power supply
 Resistor
 Ammeter
 Voltmeter
 Breadboard
 Connecting wires

Theory:

The semiconductor diode is formed by doping P-type impurity in one side and N-
type of impurity in another side of the semiconductor crystal forming a p-n
Junction as shown in figure 2.1.

At the junction initially free charge carriers from both side recombine forming
Negatively charged ions in P side of junction (an atom in P- side accept electron and becomes
negatively charged ion) and positively charged ion on n-side( an atom in n-side accepts
hole i.e. donates electron and becomes positively charged ion)region. This region deplete of
any type of free charge carrier is called as depletion region. Further recombination of free
carrier on both sides is prevented because of the depletion voltage generated due to charge
carriers kept at distance by depletion ( acts as a sort of insulation) layer as shown dotted in the
above figure.

1.Working principle
When voltage is not applied across the diode, depletion region forms as shown in the above
figure. When the voltage is applied between the two terminals of the diode (anode and
cathode) two possibilities arises depending on polarity of DC supply.

• Forward-Bias Condition: When the +Ve terminal of the batter y is connected to P-type
material & -Ve terminal to N-type terminal as shown in the circuit diagram, the
diode is said to be forward biased. The application of forward bias voltage will force
electrons in N- type and holes in P-type material to recombine with the ions near
boundary and to flow crossing junction. This reduces width of depletion region. This
further will result in increase in majority carrier s flow across the junction. If forward
bias is further increased in magnitude the depletion region width will continue to
decrease, resulting in exponential rise in current as shown in ideal diode characteristic
curve.
• Reverse –biased Condition: If the negative terminal of battery (DC power supply) is
connected with P-type terminal of diode and +Ve terminal of battery connected to N
type then diode is said to be reverse biased. In this condition the free charge carriers (i.e.
electrons in N -type and holes in P-type) will move away from junction widening
depletion region width. The minority carriers (i.e. -Ve electrons in p- type and +Ve
holes in n-type) can cross the depletion region resulting in minority carrier current
flow called as reverse saturation current ( Is) . As no of minority carrier is very
small so the magnitude of few microamperes. Ideally current in reverse bias is zero.In
short current flows through diode in forward bias, and does not flow through diode
in reverse bias. Diode can pass current only in one direction.

Experiment Procedure
Connect the power supply, voltmeter, current meter with the diode as shown in the
figure 1.2 for forward bias diode. You can use two multimeter (one to measure current through
diode and other to measure voltage across diode). Increase voltage from the power supply
from 0V to 20V in step as shown in the observation table measure voltage across diode
and current through diode. Note down readings in the observation table Reverse DC power
supply polarity for reverse bias as shown in figure 1.3,Repeat the above procedure for the
different values of supply voltage for reverse bias Draw VI characteristics for forward bias and
reverse bias in one graph. Draw VI characteristics for forward bias and reverse bias in one graph
Circuit diagram (Forward bias)

Circuit diagram (Reverse Bias)

Observation table: (Forward bias)

Supply Voltage Diode Voltage Diode Current

1. 0 0 0
2. 1 0.54 0.57
3. 2 0.58 1.45
4. 3 0.61 2.41
5. 4 0.63 3.42
6. 5 0.64 4.31
7. 6 0.65 5.42
8. 7 0.66 6.42
 7
Voltage & Current 6.42

6 5.42

Diode Current
5 4.31

(Ad mA)
4 3.42

3 2.41

2 1.45
0.57
1 0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Diode Voltage (Vd)

Observation table: (Reverse Bias)

Supply Voltage Diode Voltage Diode Current

1) 0 0 0
2) 1 1 0.1
3) 2 2 0.2
4) 3 3 0.3
5) 4 4 0.4
6) 5 5 0.5
7) 6 6 0.6
8) 7 7 0.7

Voltage & Current

0.5
0.5
(Ad µA)

0.4
0.4 0.3
0.3 0.2
0.2 0.1
0.1 0
0
0 1 2 3 4 5 6 7 8
Diode Voltage
(Vd)