BIRLA INSTITUTE OF TECHNOLOGY & SCIENCE, PILANI K K BIRLA GOA CAMPUS

Microelectronics Circuits (ECE/EEE/INSTR F244) Tutorial on MOSFET circuits at DC

Question 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All the transistors in the circuits shown in figure below have the same values of |Vt |, kn′ , W/L, and λ. Moreover,
λ is negligibly small. All operate in saturation at ID =I and |VGS |=|VDS |=1 V. Find the voltages V1 , V2 , V3 , and
V4 . If |Vt |=0.5 V and I = 0.1 mA, how large a resistor can be inserted in series with each drain while maintaining
saturation? If the current source I requires at least 0.5 V between its terminals to operate properly, what is the
largest resistor that can be placed in series with each MOSFET source while ensuring saturated-mode operation
of each transistor at ID =I? In the latter limiting situation, what do V1 , V2 , V3 , and V4 become?

+2.5 +1 +1

Q2
I

V1 V2

Q1
I

-1.5
(b)
(a)

+2.5 +1.5

Q4
I

V4
V3

Q3 I

-1.5
(c) (d)

ECE/EEE/INSTR F244 Page 1 of 2

Question 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
The NMOS and PMOS transistors in the circuit of figure below are matched with kn′ (Wn /Ln )=kp′ (Wp /Lp )=1
mA/V2 and Vtn = -Vtp = 1 V. Assuming λ=0 for both devices, find the drain currents iDN and iDP and the voltage
vO for vI =0 V, +2.5 V, and -2.5 V.

+2.5 V

QN
iDN
vI vo
iDP

QP 10 KΩ

-2.5 V

Question 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
The NMOS and PMOS transistors in the circuit of figure below are matched with kn′ (Wn /Ln )=kp′ (Wp /Lp )=1
mA/V2 and Vtn = -Vtp = 1 V. Assuming λ=0 for both devices, find the drain currents iDN and iDP and the voltage
vO for vI =0 V, +2.5 V, and -2.5 V.

+2.5 V

QP

iDP
vI vO
iDN

QN 10 kΩ

−2.5 V

ECE/EEE/INSTR F244 Page 2 of 2