Class XII Physics Support Material Imp 2022-23
Class XII Physics Support Material Imp 2022-23
SUBJECT: PHYSICS
MAX. MARKS:70 TIME:3HRS
General Instructions:
SECTION A
1. If a charge ‘q ‘is placed at the centre of the line joining two equal charges Q such that the 1
system is in equilibrium,the the value of ‘q ‘ is
i) Q/2 ii) -Q/2 iii) Q/4 iv) -Q/4
2. A cube of metal is given a positive charge Q. For the above system, which of the 1
following statement is true?
i)Electric potential at the surface of the cube is zero ii) electric potential within the cube is
zero iii) Electric field is normal to the surface of the cube iv) Electric field varies within
the cube
3. A piece of copper and another of Germanium are cooled from room temperature 77K.The 1
resistance of
i)copper decreases and Ge increases ii) copper increases and Ge decreases iii) each of
them increases iv) each of them decreases
4. Two identical circular wires P and Q each of radius Rand carrying current I are kept in 1
perpendicular planes such that they have a common centre. The magnitude of the net
magnetic field at the common centre of the two coils is
𝜇𝑜 𝐼 𝜇𝑜 𝐼
i) ii) 𝜇𝑜 𝐼𝑅 iii) zero iv)
2𝑅 √2𝑅
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5. A conducting circular loop of radius r carries a constant current i.It is placed in a uniform 1
magnetic field Bo such that Bo is perpendicular to the plane of the loop.The magnetic
force on the loop is
i) Ir Bo ii) 2πirBo iii) πirBo iv) zero
6. The magnetic susceptibility of a material of a rod is 499,permeability of vacuum is 4π x 1
10-7 H/m.Absolute permeability of the material of the rod in H/m is
i) π x 10-4 ii) 2π x 10-4 iii) 3π x 10-4 iv) 4π x 10-4
7. 1
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13. Which of the following statement is correct? 1
i) The current in a photo cell increases with increasing frequency of light ii) The photo
current is proportional to applied voltage iii)The stopping potential increases
with increasing intensity of incident light
iv) The photo current increases with increasing intensity of incident light
14. In the circuit the phase difference between the p.d across C and L is 1
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21. The radius of the first electron of the hydrogen atom is 5.3x10 -11 m. What is the radius 2
of the second orbit.
(OR)
The ground state energy of hydrogen atom is -13.6eV. What are the kinetic energy and
potential energy of the electron in this state.
22. 22. Double convex lenses are to be manufactured from a glass of refractive index 1.55, 2
with both faces of the same radius of curvature. What is the radius of curvature required if
the focal length is to be 20cm.
23. In a single slit detraction experiment, first minimum of red light (660nm) coincides with 2
the first maximum of some other wavelength λ. Calculate λ.
24. A spherical conducting shell of inner radius r1 and outer radius r2 has charge Q. 2
a) A charge q is placed at the centre of the shell. What is the surface charge density on the
inner and outer surfaces of the shell?
25. a) Two plane sheets of charge having charge densities σ and - σ are parallel to each other. 2
What will be the magnitude of electric field at a point between the plates? b) State Gauss’s
law in electrostatics.
SECTION C
26. A circular coil of radius ‘R’ carries a current ‘I’ .Obtain the expression for the magnetic 3
field due to this coil at a point on the axis of the loop using Biot-Savart’s law.
27. Define mutual inductance between a pair of coils. Derive an expression for the mutual 3
inductance of two long coaxial solenoids of same length wound one over the other.
28. 3
The above fig. shows how the reactance of an inductor varies with frequency
1. Calculate the value of the inductance of the inductor using the information given in
the graph
2. If this inductor is connected in series to a resistor of 8Ω, find what would be the
impedance at 300Hz
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OR
An a.c. source generating a voltage ε = ε0 sin ωt is connected to a capacitor of
capacitance C. Find the expression for the current I flowing through it. Plot a
graph of ε and I versus t to show that the current is ahead of the voltage by π/2.
29. The graph shown in fig 1 and 2 are for the phenomenon of photoelectric effect 3
1)
2)
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30. 3
A hydrogen atom initially in the ground state absorbs a photon which excites it to the n=4
level. Determine the wavelength and frequency of photon.
SECTION D
(i) before and (ii) after the introduction of the metal plate (iii) what would be the p.d if a
dielectric slab(K=2) were introduced in place of metal plate?
OR
(a) Two point charges 20x10-6 C and -4x10-6 C are separated by a distance of 50cm in
air (i) Find the point on the line joining the charges, where the electric potential is
zero (ii) Find the electrostatic potential energy of the system.
(b) Obtain the expression for electric field at a point near a thin infinite plane sheet of
charge density σ Cm-2
32. 5
(a) Define relaxation time of the free electrons drifting in a conductor. Write the relation
between drift velocity of free electrons and relaxation time.
(b) Derive the condition for balance in a Wheatstone bridge.
OR
(a) (i)What is internal resistance of a cell. Write two factors on which it depends.
(ii) A battery of emf E and internal resistance r is connected to a resistance R,a
current I flows through it.Derive the relation between E,I, r and R
(b) Two cells of e.m.fs and internal resistances E1,r1 and E2,r2 are connected in series.
Obtain expressions for the equivalent emf and resistance of the combination.
33. 5
(a) State Huygens principle.
(b) Define the term wavefront.
(c) Draw a ray diagram to show the working of a compound microscope. Derive an
expression for its magnifying power.
OR
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(a) Write two points of difference between interference pattern and diffraction pattern.
(b) Draw the ray diagram to show the working of a refracting telescope. Derive an
expression for its magnifying power (normal adjustment).
SECTION E
34. 4
Case study
Read the following paragraph and answer the questions.
The total internal reflection of the light is used in polishing diamonds to create a sparkling
brilliance by polishing the diamond with specific cuts, it is adjusted so that most of the
light rays approaching the surface are incident with an angle of incidence greater than
critical angle. Hence, they suffer multiple reflections and this gives the diamond a
sparkling brilliance.
(i) Light cannot easily escape a diamond without multiple internal reflections. What is the
reason?
(ii) The critical angle for diamond is 24.4o. What is its refractive index?
OR
Name a device used in communication which is based on the principle of total internal
reflection.Write one more application of it.
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35 Case study 4
Semiconductors may exist as elemental semiconductors and also compound
semiconductors. Si and Ge are elemental semiconductor and CdS, GaAs, CdSe,
anthracene, poly pyrrole etc. are the compound semiconductors. Each electron in an atom
has different energy level and such different energy levels continuing forms the band of
energy called as energy bands. Those energy band which has energy levels of Valence
electrons is called as Valence band. And the energy band which is present above the
Valence band is conduction band. On the basis of energy bands materials are also defined
as metals, semiconductors and insulators. In case of metals, conduction band and Valence
band overlaps with each other due to which electrons are easily available for conduction.
In case of insulators, there is some energy gap between conduction band and Valence
band due to which no free electrons are easily available for conduction. In
semiconductors, there is a small energy gap between conduction band and Valence band
and if we give some external energy then electron from Valence band goes to conduction
band due to which conduction will be possible. These semiconductors are classified as
intrinsic semiconductors and extrinsic semiconductors also. Intrinsic semiconductors are
those semiconductors which exist in pure form. The semiconductors doped with some
impurity in order to increase its conductivity are called extrinsic semiconductors.
(i) What is the energy gap between valence band and conduction band for a pure
germanium semiconductor?
(ii) Draw the energy band diagram of a metal.
(iii) Carbon, silicon and germanium have the same lattice structure. Why is carbon
insulator while silicon and germanium intrinsic semiconductor.
Or
Name dopants used to make i) n-type semiconductor ii) p-type semiconductor
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Class XII
Session: 2022-23
MARKING SCHEME
CBSE SAMPLE PAPER 5 (Theory)
SUBJECT: PHYSICS
QNo Marks
SECTION A
1 (iv) 1
2 (iii) 1
3 (i) 1
4 (iii) 1
5 (iii) 1
6 (ii) 1
7 (iv) 1
8 (iii) 1
9 (iv) 1
10 (iii) 1
11 (i) 1
12 (iii) 1
13 (iv) 1
14 (i) 1
15 (iv) 1
16 A is true but R is false 1
17 Both A and R are true and R is the correct explanation of A 1
18 Both A and R are false 1
19 a) Radio waves, micro waves, uv rays, x-ray, gamma ray. 1
b) micro wave 1
20 a) Paramagnetic 1
b) any two properties 1
21 rnαn2 . r2/r1=4 1
r2=2.12x10-10m 1
(or)
K=_ve of total energy. K= 13.6eV 1
Potential energy= -13.6-13.6=-27.2eV 1
22 1 1
=(n21-1) (1/R1-1/R2)
𝑓
1
Substitution, calculation and result
R=22cm
23 For diffraction minimum,sin ϴ= nλ/d 1
For diffraction maximum,sin ϴ=(2n+1)λ/2d 1
Λ= 2/3x660=440 nm
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1) graph 1
2) V0=h/e (ѵ-ѵ0) V0 is more for B 1
3) Slope = h/e so it does not depend on the material 1
30 En=-13.6/n2
E4-E1= 12.75Ev
λ = hc/E4-E1= 0.97x10-7m 2
ѵ = c/ λ = 3.07x1015Hz 1
31 1) making a region free from electric field. It is based on the fact that electric 1
field vanishes inside the cavity of a hollow conductor.
2) Two applications
b) (i) V0=E0Xd=1500V 1
(ii) V=E0(d-t)=1200V 1
(iii) E0(d-t)+(E0/k) t=1350V
(OR) 1
20𝑋10−6 4𝑋10−6
a) V= 𝑘[ - ] =0
𝑋 50−𝑥
x= 41cm 1
1 𝑞1𝑞2
u= = -1.44J
4𝜋€𝑜 𝑟
derivation of electric field 1
3
32 i)Definition 1
Two factors 1
ii) Diagram
𝐸 1
I=
𝑅+𝑟
2
b) cells in series, diagram, derivation
(OR)
1
Definition
1
Relation, vd=Ee/m𝜏
3
derivation
33 Huygens principle 1
Definition 1
Ray diagram 1.5
derivation 1.5
33 OR
Two points 2
Ray diagram 1.5
derivation 1.5
34 CASE STUDY
(i)since its critical angle with reference to air is very small. 1
(ii)2.42 1
(iii)angle of incidence must be greater than critical angle.ray should travel from
denser to rarer medium
Or 2
Optical fibre,any one use
35 (i)nearly 0.75 eV 1
(ii) E B diagram 1
Iii Energy gap will be least for Ge,followed by Si and highest for C.Hence number
of free electrons is negligible in C. 2
Or
As,Sb,P (any one)/Ga ,In,Al (any one)
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