2. Diode_Basic Operation
2. Diode_Basic Operation
Breakdown Region
As the voltage across the diode increases in the
reverse-bias region, the velocity of the
minority carriers responsible for the reverse
saturation current Is will also increase.
Eventually, their velocity and associated
kinetic energy (WK = 1/2 mv2) will be
sufficient to release additional carriers through
collisions with otherwise stable atomic
structures. That is, an ionization process will
result whereby valence electrons absorb
sufficient energy to leave the parent atom.
These additional carriers can then aid the
ionization process to the point where a high
avalanche current is established, and the
avalanche breakdown region determined.
At 25 mA,
At 25 mA,
Again,
𝐸 = 𝑉𝐷 + 𝐼𝐷 𝑅
𝐸−𝑉𝐷
⇒ 𝐼𝐷 =
𝑅
𝐸
⇒ 𝐼𝐷 = , [If VD = 0]
𝑅