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Lecture 02_annotated - ECE213

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6 views14 pages

Lecture 02_annotated - ECE213

Uploaded by

Saad Qayyum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronic Circuit Design (ECE-213)

Lecture 02

Introduction to MOSFETs

ECE-213 Electronic Circuit Design Lecture 2-1


What is MOSFET?

❑ MOSFET stands for Metal Oxide Semiconductor


Field Effect Transistor
❑ Conductivity of the semiconductor is altered
by an external field, hence, field effect
❑ It has a metal, oxide, and semiconductor
structure, hence, MOS
❑ Other field effect transistors include pn
Junction FET (JFET) and Metal Semiconductor
FET (MESFET)

ECE-213 Electronic Circuit Design Lecture 2-2


Why MOSFET?
❑ MOSFET can be made extremely small as
compared to the BJT
❑ Very Large-Scale Integration (VLSI) of
MOSFET led to the electronics revolution of
1970s and 1980s
❑ Microprocessor made possible: power desktop
computers, laptops, handheld calculators,
iPods, and other electronic systems
❑ Due to its extensive use in digital electronics,
we use it for analog applications i.e. System-
on-a Chip (SoC)
ECE-213 Electronic Circuit Design Lecture 2-3
In this chapter, we will:
❑ Study and understand the operation and characteristics of
the various types of MOSFETs.

❑ Understand and become familiar with the dc analysis and


design techniques of MOSFET circuits.

❑ Examine three applications of MOSFET circuits.

❑ Investigate current source biasing of MOSFET circuits, such


as those used in integrated circuits.

❑ Analyze the dc biasing of multistage or multitransistor


circuits.

ECE-213 Electronic Circuit Design Lecture 2-4


Two-Terminal MOS Structure
❑ Metal may be Aluminum or any
other highly conductive material
e.g. polysilicon (Gate)

❑ Semiconductor material can be n


or p type (Substrate or Body)

❑ It’s like a parallel-plate capacitor


➢ C=Aεoεr/d
❑ d=tox oxide thickness and
❑ εr = εox oxide relative permittivity
❑ A= area of gate (WL)

ECE-213 Electronic Circuit Design Lecture 2-5


ECE-213 Electronic Circuit Design Lecture 2-6
MOS Capacitor Under Bias:
Electric Field and Charge

❑ With negative gate bias, accumulation layer of holes is


formed on the bottom plate (p-type)
❑ What will happen with positive gate bias?
➢ Recall what does p-type semiconductor contain?

ECE-213 Electronic Circuit Design Lecture 2-7


Positive Gate Bias (p-substrate)
❑ With a positive gate bias, holes will be repelled
away from the oxide-semiconductor interface
❑ Hence, bound negative charge is uncovered,
forming the negative plate of MOS capacitor
❑ When gate bias is further increased, the
minority carriers (electrons) are attracted
❑ This is called electron inversion layer
➢ Qinv ∝ Vgate
❑ What happens for an n-type substrate?

ECE-213 Electronic Circuit Design Lecture 2-8


Inversion of p-type Substrate

ECE-213 Electronic Circuit Design Lecture 2-9


Negative Gate Bias (n-substrate)
❑ With a negative gate bias, electrons repelled
away from the oxide-semiconductor interface
❑ Hence, bound positive charge is uncovered,
forming the positive plate of MOS capacitor
❑ When gate bias is further decreased, the
minority carriers (hole) are attracted
❑ This is called hole inversion layer
➢ Qinv ∝ Vgate
❑ The term enhancement mode means that a
voltage must be applied to the gate to create
an inversion layer
ECE-213 Electronic Circuit Design Lecture 2-10
Inversion of n-type Substrate

ECE-213 Electronic Circuit Design Lecture 2-11


Physical Structure of n-Channel
Enhancement Mode MOSFET

ECE-213 Electronic Circuit Design Lecture 2-12


Physical Structure of n-Channel
Enhancement Mode MOSFET

❑ The gate, oxide, and p-type substrate are


same as a MOS capacitor
❑ Two additional heavily doped n-type regions
are also present
❑ These new regions are called source and
drain terminals of MOSFET
❑ The inversion layer is called channel region
❑ Thick oxide (field oxide) is deposited to isolate
various MOSFET devices

ECE-213 Electronic Circuit Design Lecture 2-13


Physical Structure of NMOSFET

❑ The channel length is sub-micron (<1μm)


❑ The numbers associated with modern technologies e.g.
14nm, 7nm are minimum channel lengths

ECE-213 Electronic Circuit Design Lecture 2-14

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