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Image Reversal

Processing image reversal resists aims for a basic understanding of the impact of the parameters exposure dose. A high 1st exposure dose (a1) yields a steep resist profile with minor undercut (a2) a small 1st. Exposure dose (b1) not exposing the substrate-near resist layer leads to a strong undercut and sometimes to peeling. Of narrow resist structures in the developer.

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José Real
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1K views

Image Reversal

Processing image reversal resists aims for a basic understanding of the impact of the parameters exposure dose. A high 1st exposure dose (a1) yields a steep resist profile with minor undercut (a2) a small 1st. Exposure dose (b1) not exposing the substrate-near resist layer leads to a strong undercut and sometimes to peeling. Of narrow resist structures in the developer.

Uploaded by

José Real
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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Processing image reversal resists P o g ima e r ve sal e st

... symptoms, diagnosis, and trouble-shooting


revised 2003-09-25

n General information about image reversal resists


Detailed processing guidelines are given in the individual technical data sheets of MicroChemicals TI und Clariant AZ image reversal resists. The present document aims for a basic understanding of the impact of the parameters exposure dose, reversal bake time and temperature, and development time.

n How image reversal resists work

soluble

inert

resist substrate
(1) Exposure using an inverted mask (the exposed areas finally remain) (2) The resist now would behave like an exposed positive resist. (3) The reversal bake crosslinks the exposed area, while the unexposed area remains photoactive

soluble

(4) The flood exposure (without mask) ...

... (5) makes the resists, which was not exposed in the first step, soluble in developer

(6) After development, the areas exposed in the first step now remain

n and their benefit for lift-off


An undercut allows reproducible lift-off of films (coated by e.g. evaporation, sputtering or PECVD) with thicknesses even exceeding the resist film thickness in case of evaporated metals:

e.g. metal film

photo resist

substrate positive resist image reversal resist image reversal resist

MicroChemicals GmbH Ulm www.microchemicals.com - [email protected]

n Impact and interaction of various process parameters n 1st exposure dose


A high 1st exposure dose (A1) yields - after reversal bake, flood exposure, and development - to a steep resist profile with minor undercut (A2), while a small 1 st exposure dose (B1) not exposing the substrate-near resist layer leads to a strong undercut and sometimes to peeling of narrow resist structures in the developer (B2). Die optimum 1st exposure dose therefore depends on the desired undercut and the minimum lateral feature sizes. At the beginning of new processes, an exposure series is recommended.

A1

B1

A2

B2

n Reversal bake
Before the reversal bake is applied, the exposed resist needs a certain time depending on the resist type and thickness to outgas nitrogen (N2) formed during exposure. This will avoid bubbling (irregular developed structures (C2)) and foaming (C1) of the resist by thermally activated N2. Nitrogen preferentially accumulates near locations with inferior resist adhesion to the substrate, which has to be optimised with i) an optimum substrate pre-treatment (e.g. TI PRIME) and ii) a sufficient softbake. Higher values for reversal bake temperature and time require smaller 1st exposure doses. Both, high (A1) as well as low (B1) 1st exposure doses may yield a huge range of undercut profiles when applying low (A1B3), medium (A1A3, B1B3) and high (B1A3) values for the parameters reversal bake temperature and time.

C1

C2

A1

B1

A3

B3

n Development
The undercut forms in the last stage of development when the structures are already cleared (figure left-hand). We recommend an approx. 30% over-developing.

n Trouble-shooting
Wrong/not calibrated exposure equipment or wrong translation to i-line (365 nm) intensity on which the resist technical data sheets base may cause too low 1st exposure doses with resist structures lifted in the developer (B2) or holes in the resist after developing as a consequence. Too low reversal bake temperatures or times (e.g. caused by thick glass substrates or imprecise temperature measurement in an oven) may cause an incomplete image reversal reaction with resist structures lifted in the developer (B2) or holes in the resist after developing as a consequence. Too low development times prohibit the formation of the desired undercut resist profile especially for small-sized features. A Hardbake after development or process temperatures (e.g. metallisation) above the softening point of the resist (100C .. 130C depending on the resist) smoothens the attained undercut and complicates lift-off.

Detailed information on individual processes and parameters are given in our process guide reproducible litho processes available on request.

MicroChemicals GmbH Ulm www.microchemicals.com - [email protected]

n Modelling: process parameters and resist profile


mask (1st exposure) The following parameter studies are numerical modelling. The impact of various process parameters on the resulting resist profile bases on the chemical and physical properties of AZ and TI resists, but does not explicitly represent a special resist. The results shown in the following tables therefore are not to be transferred to the experiment quantitatively, but qualitatively, and principally show the dependency between the process parameters resist thickness, 1st exposure dose, reversal bake temperature and time and the development time, and the resulting resist profile. With this background, the resist profiles of realized structures allow an optimization towards the desired resist profile.

resist

developed regiont substrate

Simulation I: An approx. 3 m thick resist film with various 1. exposure doses Dexp in different stages of development. Too small values for Dexp drastically increase the 'dark erosion', a reduced undercut stems small too high exposure doses. Medium Dexp require an approx. 30% 'over-development' for an optimum undercut. Simulation II: Similar to I, but using an approx. 8 m thick resist film. Simulation III: With the 1st exposure dose kept constant, towards higher reversal bake temperatures TIR, the reversed resist region (remaining after development) expands more and more into the weak exposed resist.

Simulation I: Constant reversal bake temperature, increasing 1st exposure dose Dexp Dexp = 120 mJ/cm2 160 180 200 240

MicroChemicals GmbH Ulm www.microchemicals.com - [email protected]

Simulation II: Constant reversal bake temperature, increasing 1st exposure dose Dexp Dexp = 180 mJ/cm2 230 260 360 540

MicroChemicals GmbH Ulm www.microchemicals.com - [email protected]

Simulation III: Constant 1st exposure dose, increasing reversal bake temperature TIR TIR = 115C 120C 125C 130C 135C

MicroChemicals GmbH Ulm www.microchemicals.com - [email protected]

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