Course Code 23ELMAL234

SEMICONDUCTOR DEVICES &

Title of the Course
MATERIALS
Offered to: (Programme/s) B.Sc. (H) Electronics
L 60 T 4 P 2 C 3
Year of
2024-25 Semester: 3
Introduction:
Course Category: Major Course Relates to: Global
Year of Revision: N/A Percentage: N/A
Type of the Course: Employability
Crosscutting Issues of the Course : Professional Ethics
Pre-requisites, if any Familiarity with basic electronic components

Course description:
This course offers an in-depth exploration of semiconductor devices and materials, focusing
on their properties, fabrication techniques, and applications in modern electronics. Topics
include the physics of silicon, germanium, and compound semiconductors, as well as
emerging materials like graphene. Key devices such as diodes, BJTs, and FETs are studied in
detail, along with advanced topics like power devices, optoelectronics, MEMS, and quantum
devices. Through lectures, lab experiments, and simulations, students will develop practical
skills in device characterization and fabrication, preparing them for careers in the
semiconductor industry and research.

Course Aims and Objectives:

S.NO COURSE OBJECTIVES

To understand the basic concepts, terminology, and classification of semiconductor
1 materials. To explore the crystal structure, bonding, and energy bands in
semiconductors.
2 To understand the applications of diodes, including Zener diodes and LEDs.
3 To comprehend the structure, operation, and characteristics of BJTs.
4 To study the structure, operation, and characteristics of JFETs and MOSFETs.
5 Gain insight into the fabrication processes of semiconductor devices.

Course Outcomes
At the end of the course, the student will be able to…
CO BT P PS
COURSE OUTCOME
NO L O O
CO Students will be able to explain the basic concepts, classification,
K1
1 and history of semiconductor materials.
CO They will understand the applications of diodes, Zener diodes, and
K4
2 LEDs in electronic circuits.
CO Students will be able to describe the structure, operation, and K4
 3 characteristics of BJTs.
CO Students will be able to explain the structure, operation, and
K2
4 characteristics of JFETs and MOSFETs.
Students will be knowledgeable about semiconductor fabrication
CO
techniques, including crystal growth, doping methods, and K2
5
photolithography.
For BTL: K1: Remember; K2: Understand; K3: Apply; K4: Analyze; K5: Evaluate; K6: Create

CO-PO MATRIX
CO NO PO1 PO2 PO3 PO4 PO5 PO6 PO7 PSO1 PSO2
CO1 2 2
CO2 3 1
CO3 3 3
CO4 3 1
CO5 2 2
Use the codes 3,2,1 for High, Moderate and Low correlation Between CO-PO-PSO respectively

Course Structure:
Unit – I
Semiconductors and Semiconductor physics: Classification of semiconductor materials,
Crystal structure and bonding in semiconductors, Energy bands and charge carriers, Intrinsic
and extrinsic semiconductors, Carrier transport: drift, diffusion, and recombination.

Examples/Applications/Case Studies:
 Used in the fabrication of integrated circuits (ICs) for computers, smartphones, and
other electronic devices.
 Used in RF (radio frequency) devices, such as microwave amplifiers and mobile phone
transmitters.

Exercises/Projects:
 Calculate the intrinsic carrier concentration of silicon at room temperature (300 K).
Given the intrinsic carrier concentration for silicon at 300 K is approximately 1.5×1010
cm-3.

Specific Resources: (web)

MIT OpenCourseWare - Integrated Microelectronic Devices

Unit - II
PN Junctions: Formation and properties of PN junction’s, forward and reverse bias
characteristics, Junction capacitance and breakdown mechanisms, Applications: diodes,
Zener diodes, LEDs.

Examples/Applications/Case Studies:
 PN junction diodes are used in power supply units (PSUs) to convert AC from the
mains supply to DC, like computers, televisions, and chargers.
 LEDs are widely used in display screens, indicator lights, and general lighting solutions
due to their energy efficiency, long life, and bright illumination. They are found in
products such as televisions, smartphones, traffic lights, and household lighting.

Exercises/Projects:
 Project 1: Designing and Building a Full-Wave Rectifier
 Project 2: Building and Characterizing an LED Display
Specific Resources: (web)
PN Junction Theory (Electronics Tutorials).

Unit - III
Bipolar Junction Transistors (BJTs): Structure and operation of BJTs, I-V characteristics and
regions of operation, Small signal and large signal models, BJT applications in amplification
and switching.

Examples/Applications/Case Studies:
 Case Study 1:Design and Implementation of a BJT Amplifier
 Case Study 2: BJT as a Switch in Digital Circuits
Exercises/Projects:
 Exercise 1: Analyzing the Characteristics of an NPN BJT
 Exercise 2: Designing a BJT Amplifier
Specific Resources: (web)
Introduction to Electronics, Signals, and Measurement - BJT (MIT OpenCourseWare).

Unit - IV
Field Effect Transistors (FETs): Junction FET (JFET) and Metal-Oxide-Semiconductor FET
(MOSFET), MOSFET structure, operation, and characteristics, Scaling of MOSFETs and
challenges in modern technology, Advanced FETs: HEMT, FinFET.

Examples/Applications/Case Studies:
 Example 1: Digital Audio Transmission Using Pulse Modulation
 Example 2: Television Broadcasting Using Frequency Division Multiplexing (FDM)
Exercises/Projects:
 Analyze and design a pulse modulation system for transmitting an audio signal.
 Design an FDM system for transmitting multiple signals and analyze its performance.
Specific Resources: (web)
Electronics Tutorials - Field Effect Transistors (FETs)

Unit - V
Semiconductor Fabrication Techniques: Crystal growth and wafer preparation, Doping
methods: diffusion and ion implantation, Photolithography, etching, and deposition
techniques, Packaging and testing of semiconductor devices.

Examples/Applications/Case Studies:
 Application 1: Integrated Circuit (IC) Fabrication.
 Application 2: Solar Cell Manufacturing

Exercises/Projects:
 Exercise 1: Photolithography Process Simulation
 Exercise 2: Doping Semiconductor Materials using Diffusion
Specific Resources: (web)
(Thermo Fisher) (SemiconSociety Blogs)

Text Books

1. Donald A. Neamen, 2003, Semiconductor Physics and Devices BasicPrinciples, 3/e.

McGraw-Hil.
2. S. M. Sze and Kwok K. Ng, 2013, Physics of Semiconductor Devices, 2/e, Wiley.

Reference Books

1. B.G. Streetman and Sanjay Banerjee, 2006, Solid State Electronic Devices, 6/e,
Prentice Hall.
2. Anok Singh,2004,Principles of Communication Engineering, 4/e, Sathyaprakasam
Publications.
3. M. Hussa, A. Dimoulas and A. Molle, 2016, 2D Materials for NanoElectronics, CRC
press.
4. M.S.Tyagi, 2008, Introduction to Semiconductor Materials and Devices, Student
Edition, Willey.

P.B. SIDDHARTHA COLLEGE OF ARTS &SCIENCE, VIJAYAWADA – 10

Department of Electronics
 Title:SEMICONDUCTOR DEVICES & MATERIALS
(Course code: 23ELMAL234) ,MODEL PAPER
SECTION-A
Answer the following: 5 x 4 = 20M
1. (a)Explain the difference between intrinsic and extrinsic semiconductors. K1
Or
(b)Describe the process of electron-hole recombination in semiconductors.K1
2. (a) What is the role of a PN junction diode in a rectifier circuit? K3
Or
(b) Describe the working principle of a Zener diode and its application in voltage regulation.K3
3. (a) Explain the structure and operation of an NPN Bipolar Junction Transistor (BJT).K3
Or
(b) What is the Early effect in BJTs and how does it influence the transistor's operation?K3
4. (a) Outline the basic steps involved in the photolithography process. K2
Or
(b) Discuss the significance of doping in modifying the electrical properties of semiconductors.K2
5. (a) Describe the concept of power semiconductor devices with an example. K2
Or
(b) Explain the working of an optoelectronic device like a Light Emitting Diode (LED).K2

SECTION-B
Answer the following: 5x10=50M
6.(a) Discuss in detail the energy band structure of semiconductors and its implications for
electronic properties. K1
Or
(b) Explain the carrier generation and recombination processes in semiconductors with relevant
equations. K1
7.(a) Compare and contrast the characteristics and applications of PN junction diodes and Schottky
diodes. K3
Or
(b)Analyze the working of a full-wave rectifier circuit and derive expressions for its output voltage
and efficiency. K3
8.(a) Describe the input and output characteristics of a common-emitter BJT configuration. Include
diagrams and explain the significance of each region. K3
Or
(b) Discuss the design and operation of a BJT amplifier, including biasing techniques and gain
calculation. K3
9.(a)Explain the construction and operation of JFET and describe its input and output characteristics.K2
Or
(b)Discuss the operation and applications of advanced semiconductor devices such as MOSFETs and
IGBTs. K2
10.(a)Explain the various semiconductor fabrication techniques such as ion implantation, oxidation,
and metallization.K2
Or
(b)Describe the process of Chemical Vapor Deposition (CVD) and its application in
semiconductor manufacturing.K2