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1 Introduction to Energy Levels

The document provides an introduction to energy levels in semiconductors, focusing on the differences between conduction and valence bands, as well as the Fermi levels in intrinsic, N-type, and P-type materials. It explains the formation of PN junctions, the concept of depletion regions, and the calculation of built-in potential and depletion region sizes in silicon PN junctions. The content is presented in a structured format, likely for a semiconductor testing course.

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Nataly Medina
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8 views16 pages

1 Introduction to Energy Levels

The document provides an introduction to energy levels in semiconductors, focusing on the differences between conduction and valence bands, as well as the Fermi levels in intrinsic, N-type, and P-type materials. It explains the formation of PN junctions, the concept of depletion regions, and the calculation of built-in potential and depletion region sizes in silicon PN junctions. The content is presented in a structured format, likely for a semiconductor testing course.

Uploaded by

Nataly Medina
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INTRODUCTION TO

ENERGY LEVELS
Semiconductor testing course
Energy levels and PN junctions

PRESENTED BY
Prof. Nataly Medina
ENERGY LEVELS
Conduction band vs Valence band
ENERGY LEVELS
Conduction band vs Valence band
ENERGY LEVELS
Fermi level in an intrinsic semiconductor
Intrinsic
• It’s the energy level where the probability of
Ec material
finding an electron is 50% when the material
is at a temperature of absolute zero (0 Kelvin).

• Ef = Ei is located approximately midway Ef = Ei


between the conduction band and the
valence band.
Ev
• The Fermi level helps us understand how
electrons will behave when energy is added
(like heat, light, or an electric field).
N-Type
Semiconductor
An Antimony (Sb) impurity atom has been
added. The extra electron from the Sb
atom becomes a free electron.

Pentavalent impurity atom in a Silicon crystal


structure.
Majority carriers: The free electrons.
ENERGY LEVEL
N-Type material

• Donor atoms contribute with additional Ec


electrons.
• As a result, the Fermi level shifts closer to Ef
the conduction band.
• Higher doping moves the Fermi level closer Ei
to the conduction band edge.

Ev
ENERGY LEVEL
Relation between Ef and Ei in N-Type materials

= 1.380649 × 10−23 𝐽/𝐾


P-Type
Semiconductor
A Boron (B) impurity atom has been
added. A hole results when each trivalent
atom is added.

Trivalent impurity atom in a Silicon crystal


structure.
Majority carriers: The holes
ENERGY LEVEL
P-Type material

Ec
• Acceptor atoms introduce holes by creating
energy levels close to the valence band.
• This increases the hole concentration
significantly compared to the intrinsic Ei
carrier concentration.
Ef
Ev
ENERGY LEVEL
Relation between Ef and Ei in P-Type materials

= 1.380649 × 10−23 𝐽/𝐾


The PN
Junction
The free electrons near the juction in
the N region begin to diffuse across the
juction into the P region.

The term depletion refers to the fact


that the region near the PN juntion is
depleted of charge carriers due to
diffusion.
ENERGY LEVEL
PN Junction

Ec
= 1.60 𝑥 10−19 𝐶
Built-in potential
(Vbi)
Ei Ec
Ei - Ef

Ef Ef
Ev
Ef - Ei

Ei
Fermi levels (Ef) of the P-type and N-type materials
align in thermal equilibrium, creating a built-in Ev
potential (Vbi) across the junction.

Depletion region
ENERGY LEVEL
Built-in Potential
EXAMPLE
Built-in Potential

Calculate the built-in potential barrier of a PN junction. Consider a


Silicon PN junction at T = 300°K with doping concentrations of:

𝑁𝐴 = 2 × 1016 𝑐𝑚−3
𝑁𝐷 = 5 × 1015 𝑐𝑚−3
𝑁𝑖 = 1.5 × 1010 𝑐𝑚−3

𝑞 = 1.60 × 10−19 𝐶
𝑘 = 1.380649 × 10−23 𝐽/𝐾
How big is
the depletion
region?
Xp Xn
EXAMPLE
How big is the depletion region?

Calculate Xn, Xp, Vbi, Emax for a PN junction of Si at T = 300°K with:

𝑁𝐴 = 2 𝑥 1017 𝑐𝑚−3
𝑁𝐷 = 1016 𝑐𝑚−3
𝑁𝑖 = 1.5 𝑥 1010 𝑐𝑚−3
𝜖𝑠𝑖 = (11.7)(8.85 × 10−14 ) 𝐹/𝑐𝑚
𝜙 𝑇 = 25.9𝑚𝑉
𝑞 = 1.60 𝑥 10−19 𝐶

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