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Digital_Integrated_Circuit_03_Wires

The lecture discusses the capacitance and resistance of wire interconnects in digital integrated circuits, emphasizing the significance of parasitic capacitance and resistance in advanced technology. It presents various models for estimating wire behavior, including ideal, lumped, and distributed RC models, and highlights the impact of interconnect materials and design choices on performance. Additionally, it provides empirical data on capacitance values and resistance in multi-level interconnect systems.

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0% found this document useful (0 votes)
14 views24 pages

Digital_Integrated_Circuit_03_Wires

The lecture discusses the capacitance and resistance of wire interconnects in digital integrated circuits, emphasizing the significance of parasitic capacitance and resistance in advanced technology. It presents various models for estimating wire behavior, including ideal, lumped, and distributed RC models, and highlights the impact of interconnect materials and design choices on performance. Additionally, it provides empirical data on capacitance values and resistance in multi-level interconnect systems.

Uploaded by

chiyeon0607
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Lecture 3 – The Wires

Digital Integrated Circuits

Yoonmyung Lee
[email protected]
College of Information & Communication Engineering
Kang Ch. 6.5-6.6
Sungkyunkwan University Rabaey Ch. 4.1-4.5
Materials adapted from Textbook,
KW Kwon, SY Kim (SKKU)
Blaauw, Zhang (U of Michigan)
Integrated Circuits & Systems Design Lab.
Metal Wires

Source: ITRS

Source: Larry Zhao


2 Digital Integrated Circuits
Capacitance of Wire Interconnect

VDD VDD

M2
Cdb2 Cg4 M4
Cgd12
Vin Vout Vout2

Cdb1 Cw Cg3
M1 M3
Interconnect

Fanout
Vin Vout
Simplified
Model CL

3 Digital Integrated Circuits


Single Wire Capacitance
 Parallel-plate capacitance

 Fringe capacitance due to fringing field at the edges

(from [Bakoglu89])
4 Digital Integrated Circuits
Single Wire Capacitance: Empirical Model
 Empirical model for quick capacitance calculation

5 Digital Integrated Circuits


Inter-wire Capacitance
 Capacitance between wires in multiple layers

(from [Bakoglu89])

 Inter-wire capacitance can be significant in advanced technology


 EDA tool parasitic extraction: R only, C only, R+C, R+C+CC
6 Digital Integrated Circuits
Parasitic Parallel-plate Capacitance Values
Area Capacitance: aF/μm2

FOX PO M1 M2 M3 M4 M5 M6 M7 M8 M9
FOX - 6.37 5.14 2.98 1.99 1.49 1.20 0.99 0.85 3.23 2.45
PO 6.37 - 16.6 5.13 1.99 1.49 1.44 1.16 0.97 3.57 2.64
M1 5.14 16.6 - 15.1 4.28 2.50 1.76 1.36 1.11 3.96 2.85
M2 2.98 5.13 15.1 - 15.1 4.28 2.50 1.76 1.36 4.61 3.17
M3 1.99 1.99 4.28 15.1 - 15.1 4.28 2.50 1.76 5.51 3.57
M4 1.49 1.49 2.50 4.28 15.1 - 15.1 4.28 2.50 6.85 4.09
M5 1.20 1.44 1.76 2.50 4.28 15.1 - 15.1 4.28 9.05 4.79
M6 0.99 1.16 1.36 1.76 2.50 4.28 15.1 - 15.1 13.3 5.77
M7 0.85 0.97 1.11 1.36 1.76 2.50 4.28 15.1 - 25.3 7.26
M8 3.23 3.57 3.96 4.61 5.51 6.85 9.05 13.3 25.3 - 25.3
M9 2.45 2.64 2.85 3.17 3.57 4.09 4.79 5.77 7.26 25.3 -

7 Digital Integrated Circuits


Parasitic Fringing-plate Capacitance Values
Fringe Capacitance: aF/μm

FOX PO M1 M2 M3 M4 M5 M6 M7 M8 M9
FOX - 23.4 15.1 13.2 11.5 10.7 10.2 10.4 10.5 12.3 11.2
PO 23.4 - 27.6 15.6 12.6 11.4 10.4 10.4 10.9 12.7 11.2
M1 15.1 27.6 - 26.4 14.5 12.3 11.3 10.8 11.3 13.2 11.8
M2 13.2 15.6 26.4 - 26.4 14.6 12.4 11.6 11.9 13.9 12.3
M3 11.5 12.6 14.5 26.4 - 26.4 14.7 12.7 12.7 14.9 12.8
M4 10.7 11.4 12.3 14.6 26.4 - 26.4 14.9 13.9 16.4 13.5
M5 10.2 10.4 11.3 12.4 14.7 26.4 - 26.8 16.4 18.6 14.3
M6 10.4 10.4 10.8 11.6 12.7 14.9 26.8 - 28.6 22.6 15.3
M7 10.5 10.9 11.3 11.9 12.7 13.9 16.4 28.6 - 33.0 16.7
M8 12.3 12.7 13.2 13.9 14.9 16.4 18.6 22.6 33.0 - 32.4
M9 11.2 11.2 11.8 12.3 12.8 13.5 14.3 15.3 16.7 32.4 -

8 Digital Integrated Circuits


Resistance of Wire Interconnect

R= L
HW

L Sheet Resistance
H Ro

R1 R2
W

9 Digital Integrated Circuits


Dealing with Resistance
 Process: Selective Technology Scaling
 Process: Use better interconnect material
 e.g. copper, silicide
 Design: More interconnect layers, more vias

Silicide

PolySilicon

SiO2

n+ n+
p

Silicides: WSi 2, TiSi 2, PtSi2 and TaSi


Conductivity: 8-10 times better than Poly

10 Digital Integrated Circuits


Sheet Resistance Table

11 Digital Integrated Circuits


Multi-Level Interconnect
 Intel 0.25μm example

12 Digital Integrated Circuits


Multi-Level Interconnect
 Contact / Via Resistance is significant!!

Via Stack Resistance (Ω)


Diff-M1 11.0
Poly-M1 10.4
M2-M1 4.5
M3-M1 9.5
M4-M1 15.0
M5-M1 19.6
M6-M1 21.8 (180nm CMOS)

 Resistance of M1-M6 via stack is equivalent to 0.1mm wire (~20Ω)


 Use more vias in parallel to reduce effective contact resistance
 Larger via/contact is NOT ALLOWED by process engineers

13 Digital Integrated Circuits


The Ideal Wire Model
 “Model” – needed for mathematical estimation / simulation
 Ideal wire – no Resistance, no Capacitance, no Inductance
 No propagation delay
 A voltage change at one end is immediately visible at the other end
 Entire wire is equipotential
 Physically unrealizable
 R = 0 : superconductor
 C = 0 : zero permittivity (ε0) or infinite distance to other wires
 L = 0 : zero permeability (μ0)
 The delay is bounded by the speed of light
 Local interconnects
 Small parasitic – can be approximated with ideal wire
 Most other interconnects
 Wire delay is substantial
 Precise estimation by EDA tool is critical

14 Digital Integrated Circuits


Lumped C Model
 Low R, only consider C
Rdriver
V
out
Vo ut

cwi re Vin
Driver Clumped

𝑑𝑉𝑜𝑢𝑡 𝑉𝑜𝑢𝑡 − 𝑉𝑖𝑛


𝐶𝑙𝑢𝑚𝑝𝑒𝑑 + =0
𝑑𝑡 𝑅𝑑𝑟𝑖𝑣𝑒𝑟
𝑉𝑜𝑢𝑡 𝑡 = 1 − 𝑒 −𝑡/τ 𝑉 𝜏 = 𝑅𝑑𝑟𝑖𝑣𝑒𝑟 × 𝐶𝑙𝑢𝑚𝑝𝑒𝑑

 Time to reach 50% point: t50% = ln(2) 𝜏 = 0.69 𝜏


 Time to reach 63% point: t63% = ln(e) 𝜏 = 1.00 𝜏
 Time to reach 10%  90% point: t10-90% = ln(9) 𝜏 = 2.2 𝜏

 Lumped C (or R) model


 Simple but inaccurate
 Unrealistic for nested node
15 Digital Integrated Circuits
Lumped RC Model : The Elmore Delay

 Shard path resistance

 Elmore delay (time constant – time to reach 63%)

 Elmore delay of node ‘i’ in above example

16 Digital Integrated Circuits


Elmore Delay of RC Chain
 An RC chain example (no nested network)

 Elmore delay of node N

 Elmore delay of node ‘i’ in above example

17 Digital Integrated Circuits


Time Constant of Resistive-Capacitive Wire
 Segmented RC wire
 Assume total wire length L partitioned into N identical segments
 Each segment has…
segment length of L/N
segment resistance of rL/N
𝑳 𝑳
segment capacitance of cL/N 𝒓
𝑵
𝒄
𝑵

with N ∞,
 Delay of a wire is a quadratic function of its length
 Distributed RC model delay is half of lumped RC model delay (N=1 vs ∞)
18 Digital Integrated Circuits
Distributed RC Model

KCL @ node i

ΔL  0 (diffusion equation)

When t << RC

When t >> RC

19 Digital Integrated Circuits


Distributed RC Model

20 Digital Integrated Circuits


Step Response of Lumped & Distributed RC Network

R R/2 R/2
Vin Vout Vin Vout

C C

(a) (b)

R/4 R/2 R/4 R


Vin V out Vin Vout

C/2 C/2 C/2 C/2

(c) (d)

R/2 R/2 R/3 R/3 R/3


Vin Vout Vin Vout

C/4 C/2 C/4 C/6 C/3 C/3 C/6

(e) (f)

Alternative simulation models for distributed RC network


21 Digital Integrated Circuits
Driving a Distributed RC Line

22 Digital Integrated Circuits


Driving Long Wires

 Propagation vs. Elmore delay expression:


 0.69×R×C vs. R×C for portion that can be calculated with lumped RC model
 0.38×R×C vs. 0.5×R×C for portion that can be calculated
with distributed RC model

23 Digital Integrated Circuits


Driving Distributed RC & Lumped RC Line
Ideal
Driver
Vout1

Vout2

 Assume all resistance = R, capacitance = C


 Elmore/propagation delay for Vout1

 Elmore/propagation delay for Vout2

24 Digital Integrated Circuits

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