SOLA3540_9001Tutorial1bSolutions_2010
SOLA3540_9001Tutorial1bSolutions_2010
Tutorial 1b Solutions
Question 1
G(x) = αNe-αx
G(0) = αN
G(x)/G(0) = e-αx
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Question 2
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Question 3
Pout 0.4 × 80 × 10 −3
(a) η = = =8%
Pin 100 × 10 −3 × 4
Question 4
(a) RS is related to the contact resistance and to the sheet resistance of the top layer of the device.
RSH is related to junction imperfections. The junction can drain some current through defects
and/or can be partially shorted.
Current from the cell is IRs (current through Rs)
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I Rs = I L + I D − I Rsh
⎡ ⎛V + I R ⎞ ⎤
I D = I 0 ⎢exp⎜ Rs s
⎟ −1⎥
⎣ ⎝ kT / q ⎠ ⎦
V + I Rs Rs
I Rsh =
Rsh
⎡ ⎛V + I R ⎞ ⎤ V + I R
I Rs = I L − I 0 ⎢exp⎜ Rs s
⎟ −1⎥ −
Rs s
⎣ ⎝ kT / q ⎠ ⎦ Rsh
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0.864
1.02 0.98
2%
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Question 5
(a)
dVOC
≈ −0.003VOC
dT
dV
→ OC ≈ −0.003/°C × (40° − 25°) × 635mV
dT
≈ −28.6mV
(b)
dI SC
≈ 0.0006I SC
dT
dI
→ SC ≈ 0.0006 /°C × (40°− 25°) × 35.2mA /cm 2
dT
≈ 0.32mA /cm 2
(c)
dFF
≈ −0.0015FF
dT
dFF
→ ≈ −0.0015 /°C × (40° − 25°) × 0.773
dT
≈ −0.0174
(d)
dPM
≈ −0.004 PM
dT
dP
→ M ≈ −0.004 / °C × (40° − 25°) × 0.635 × 0.0352 × 0.773W / cm 2
dT
≈ −0.001W / cm 2 ≈ 1mW / cm 2
Question 6
(a) Isc = 50mW/cm2 × 1/1.5eV × 0.5cm2 = 16.7 mA
(b) n = 1.5
nkT ⎛ I sc ⎞
Voc = ln⎜ +1 ⎟
q ⎝ I0 ⎠
⎛ 16.7 ×10−3 ⎞
= 0.039 × ln⎜ −9
+1 ⎟ = 0.595V
⎝ 4 ×10 ⎠
Voc
υ oc = =15.3
nkT / q
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υ oc − ln(υ oc + 0.72)
FF% =
υ oc +1
15.3− ln(15.3+ 0.72)
=
16.3
= 0.768 = 76.8%
Pmax Voc I sc FF
η= =
Pin 50mW /cm 2 × 0.5cm 2
0.595V ×16.7mA × 0.768
= = 30.5%
25mW
QE(λ4) = 0
Isc4 = 0
Question 7
nkT I
(a) Voc = ln( L + 1) ,
q I0
IL
⇒ I0 = ,
V
exp( oc )
VT
nkT I I (10suns )
Voc ≈ ln( L ) = VT × ln( sc )
q I0 I0
(c)
33
= 0.0259 × ln( ) = 0.66 (V ) = 660 (mV )
2.868 × 10 −10
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