CMPA901A035F

35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers
35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.
The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25
mm x 9.9 mm metal/ceramic flanged package. It offers high gain and PN: CMPA901A035F
superior efficiency in a small footprint package at 50 ohms. Package Type: 440213

Typical Performance Over 9.0 - 11.0 GHz (TC = 25˚C)

CW Performance 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
Output Power 46 45 43 42 37 W
Gain 23.7 23.5 23.3 23.2 22.7 dB
Power Added Efficiency 40 36 34 34 35 %
Note: Measured in the CMPA901A035F-AMP application circuit, under CW signal, PIN = 23 dBm

Pulsed Performance 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz Units
Output Power 51 52 50 48 40 W
Gain 24.1 24.2 24.0 23.8 23.0 dB
Power Added Efficiency 41.7 38.0 36.5 36.4 35.3 %
Note: Measured in the CMPA901A035F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 23 dBm

Features Applications
• 9.0 - 11.0 GHz Operation • Military Radar
• Typical Output Power 40 W • Marine Radar
• Typical Power Gain 23 dB • Weather Radar
• Typical PAE 35% • Medical Applications
• Operation up to 28 V

Rev 0.3 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA901A035F 2

Absolute Maximum Ratings (not simultaneous) at 25˚C

Parameter Symbol Rating Units Conditions

Drain-source Voltage VDS 84 VDC 25˚C
Gate-source Voltage VGS -10, +2 VDC 25˚C

Storage Temperature TSTG -40, +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 19 mA 25˚C

Soldering Temperature1 TSTG 245 ˚C

Screw Torque T 40 in-oz

Thermal Resistance, Junction to Case, CW RθJC 1.3 ˚C/W 85˚C @ PDISS = 80 W

Thermal Resistance, Junction to Case, Pulsed RθJC 0.93 ˚C/W 85˚C @ PDISS = 80 W

Case Operating Temperature TC -40, +150 ˚C

Note:
1
Refer to the Application Note on soldering at wolfspeed.com/rf/document-library

Electrical Characteristics (Frequency = 9.0 GHz to 11.0 GHz unless otherwise stated; TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics 1,2

Gate Threshold VTH -3.8 -2.8 -2.3 V VDS = 10 V, IDS = 19.8 mA

Saturated Drain Current 3
IDS 14.3 19.8 – A VDS = 6 V, VGS = 2 V
Drain-Source Breakdown Voltage VBD 84 – – V VGS = -8 V, IDS = 19.8 mA

RF Characteristics
Small Signal Gain S21 – 34 – dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm
Input Return Loss S11 – -6.4 – dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm
Output Return Loss S22 – -6.8 – dB VDD = 28 V, IDQ = 1.5 A, PIN = -23 dBm

Output Power 4,5

POUT1 – 45.7 – W VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 9 GHz

Output Power 4,5 POUT2 – 44.7 – W VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 10 GHz

Power Added Efficiency 4,5,6

PAE1 – 40 – % VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 9 GHz

Power Added Efficiency 4,5,6 PAE2 – 37 – % VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, Freq = 10 GHz
No damage at all phase angles,
Output Mismatch Stress VSWR – 5:1 VSWR Y VDD = 28 V, IDQ = 1.5 A, PIN = 23 dBm, CW

Notes:
1
At 25 ˚C
2
Measured on-wafer prior to packaging
3
Scaled from PCM data
4
Measured in the CMPA901A035F-TB fixture (AD-938547)
5
Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value
a) 9.0 GHz - 0.20 dB
b) 10.0 GHz - 0.25 dB
6
Power added efficiency = (POUT - PIN) / PDC

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 CMPA901A035F 3
CMPA901A035F Typical Performance

Figure 1. Small Signal Gain and Return Loss vs. Frequency of the CMPA901A035F
as Measured in Circuit CMPA901A035F-AMP Demonstration Amplifier
Small Signal Gain and Return Loss vs. Frequency
VDDCMPA901A035F
= 28 V, IDQ = 1.5 A
VDD = 28V, IDQ=1.5A
40

30
Gain, Return Loss (dB)
Gain, Return Loss (dB)

20
S21

S11
10
S22

-10

-20
8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Frequency (GHz)

Figure 2. CW Output Power vs. Frequency as a Function of Input Power of the CMPA901A035F
as Measured in Demonstration Amplifier Circuit CMPA901A035F-AMP
VDD = 28 V, IDQ = 1.5 A
48.0

47.5

47.0
Output Power (dBm)

46.5
Output Power (dBm)

46.0

45.5

45.0

44.5

44.0 18dBm
20dBm
43.5 23dBm
26dBm
43.0
8.5 9 9.5 10 10.5 11 11.5

Frequency (GHz)
Frequency (GHz)

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 CMPA901A035F 4
CMPA901A035F Typical Performance

Figure 3. CW Power Gain vs. Frequency as a Function of Input Power

VDD = 28 V, IDQ = 1.5 A
30

25

20
Gain (dB)
Gain (dB)

15

10 18dBm

20dBm

5 23dBm

26dBm

0
8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency (GHz)
Frequency (GHz)

Figure 4. CW Power Added Efficiency vs. Frequnecy as a Function of Input Power

VDD = 28 V, IDQ = 1.5 A

45

40

35
Power Added Efficiency (%)
Power Added Efficiency (%)

30

25

20

15 18dBm
20dBm
10 23dBm
26dBm
5

0
8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency (GHz)
Frequency (GHz)

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 CMPA901A035F 5
CMPA901A035F Typical Performance

Figure 5. CW Output Power vs. Input Power as a Function of Input Power

VDDCW
= 28
PoutV, IDQ
vs.
CMPA901A035F
Pin= 1.5 A

VDD = 28V, IDQ=1.5A,

48

47
Po_9p0

46 Po_10p0
Po_11p0
Output Power (dBm)

45
Output Power (dBm)

44

43

42

41

40

39

38
10 12 14 16 18 20 22 24 26
Input Power (dBm)

Input Power (dBm)

Figure 6. CW Power Added Efficiency vs. Input Power as a Function of Input Power
VDD
CW=PAE
28 vs.
V, IPin
DQ
= 1.5 A
CMPA901A035F
VDD = 28V, IDQ=1.5A,
45

40
Added Efficiency (%)

35
Power Added Efficiency (%)

30

25

20

15
Power

10
PAE_9p0
PAE_10p0
5
PAE_11p0

0
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Input Power (dBm)

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 CMPA901A035F 6
CMPA901A035F Typical Performance

Figure 7. CW Gain vs. Input Power as a Function of Input Power

VDDCW
= Gain
28 V,vs.IDQ
Pin= 1.5 A
CMPA901A035F
VDD = 28V, IDQ=1.5A,
35

30

25
Gain (dBm)

20
Gain (dB)

15

10 Pg_9p0
Pg_10p0
Pg_11p0
5

0
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Input Power (dBm)

Figure 8. Pulsed Output Power vs. Frequency as a Function of Input Power

VDD = 28 V,Pulsed
IDQ = 1.5 A, Power
Output Pulsevs.Width = 100
Frequency for μSec,
diffrent Duty
Pin Cycle = 10%
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100 us 10%
48.0

47.5

47.0
Power (dBm)

46.5
Output Power (dBm)

46.0

45.5
Output

45.0
18dBm
44.5

44.0 20dBm

43.5 23dBm

43.0
8.5 9 9.5 10 10.5 11 11.5
Frequency (GHz)
Frequency (GHz)

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 CMPA901A035F 7
CMPA901A035F Typical Performance

Figure 9. Pulsed Power Gain vs. Frequency

Pulsed Power Gain vs. Frequency for diffrent Pin
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100 us 10%
30

25

20
Gain (dB)
Gain (dB)

15

18dBm
10
20dBm

5
23dBm

0
8.5 9 9.5 10 10.5 11 11.5
Frequency (GHz)
Frequency (GHz)

Figure 10. Pulsed Power Added Efficiency vs. Frequency

VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%

50

45

40
Power Added Efficiency (%)

35
Power Added Efficiency (%)

30

25

20

15
18dBm

10 20dBm

23dBm
5
26dBm

0
8.5 9.0 9.5 10.0 10.5 11.0 11.5

Frequency (GHz)
Frequency (GHz)

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 CMPA901A035F 8
CMPA901A035F Typical Performance

Figure 11. Pulsed Output Power vs. Input Power

Pulsed Pout vs. Pin
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
CMPA901A035F
VDD = 28V, IDQ=1.5A, 100uS/10%
48

47
Po_9p0

46 Po_10p0
Output Power (dBm)

Po_11p0
45
Output Power (dBm)

44

43

42

41

40

39

38
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Input Power (dBm)

Figure 12. Pulsed Power Added Efficiency vs. Input Power

VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
Pulsed PAE vs. Pin
CMPA901A035F
VDD = 28V, IDQ=1.5A,
45

40 PAE_9p0
Power Added Efficiency (%)

PAE_10p0
35
PAE_11p0
Power Added Efficiency (%)

30

25

20

15

10

0
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Input Power (dBm)

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 CMPA901A035F 9
CMPA901A035F Typical Performance

Figure 13. Pulsed Gain vs. Input Power

Pulsed Gain vs. Pin
VDD = 28 V, IDQ = 1.5 A, Pulse Width = 100 μSec, Duty Cycle = 10%
CMPA901A035F
VDD = 28V, IDQ=1.5A,
35

30

25
Gain (dB)
Gain (dB)

20

15

10
PG_9p0
PG_10p0
5
PG_11p0

0
10 12 14 16 18 20 22 24 26
Input Power (dBm)
Input Power (dBm)

Figure 14. Pulse Droop

VDD = 28 V, IDQ = 1.5 A,CMPA901A035A
Frequency
Pulse Droop
= 9.5 GHz, PIN = 26 dBm
Pin=26 dBm,Freq. 9.5 GHz VDD=28,IDQ=1.5 A
48
10 uS
47.8 50 us
100 us
47.6 200us
500 us
47.4
Pout (dBm)
Pout (dBm)

47.2

47

46.8

46.6

46.4

46.2

46
0 50 100 150 200 250 300 350 400 450 500 550 600
Pulse Length (µS)
Pulse Length (μs)

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 CMPA901A035F 10

CMPA901A035F-AMP Demonstration Amplifier Circuit Bill of Materials

Designator Description Qty

C15 CAP ELECT 100UF 80V AFK SMD 1
C16-C23 CAP,33000PF, 0805,100V, X7R 8

R1,R2 RES 0.0 OHM 1/16W 0402 SMD 2

CONN, SMA, PANEL MOUNT JACK, FLANGE,
J1,J2 2
4-HOLE, BLUNT POST, 20MIL
CONN, SMB, STRAIGHT JACK RECEPTACLE,
J4 1
SMT, 50 OHM, Au PLATED
J3 HEADER RT>PLZ .1CEN LK 9POS 1

W1 WIRE, BLACK, 22 AWG ~ 1.50” 1

W2 WIRE, BLACK, 22 AWG ~ 1.75” 1

W3 WIRE, BLACK, 22 AWG ~ 3.0” 1

Q1 CMPA901A035F 1

CMPA901A035F-AMP Demonstration Amplifier Circuit

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 CMPA901A035F 11
CMPA901A035F-AMP Demonstration Amplifier Circuit Schematic

CMPA901A035F-AMP Demonstration Amplifier Circuit Outline

W3

W2
W1

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 CMPA901A035F 12
Product Dimensions CMPA901A035F

PRELIMINARY

Pin Number Qty

1 Gate Bias for Stage 1, 2 & 3
2 Gate Bias for Stage 1, 2 & 3
3 RF IN

4 Gate Bias for Stage 1, 2 & 3

5 Gate Bias for Stage 1, 2 & 3

6 Drain Bias

7 Drain Bias

8 RF OUT

9 Drain Bias

10 Drain Bias

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 CMPA901A035F 13

Part Number System

CMPA901A035F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency
Cree MMIC Power Amplifier

Table 1.
Parameter Value Units
Lower Frequency 9.0 GHz
Upper Frequency1 10.0 GHz
Power Output 35 W
Package Flanged -

Note1: Alpha characters used in frequency code indicate a value

greater than 9.9 GHz. See Table 2 for value.

Table 2.
Character Code Code Value
A 0
B 1
C 2
D 3
E 4
F 5
G 6
H 7
J 8
K 9
1A = 10.0 GHz
Examples:
2H = 27.0 GHz

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 CMPA901A035F 14
Product Ordering Information

Order Number Description Unit of Measure Image

CMPA901A035F GaN HEMT Each

CMPA901A035F-AMP Test board with GaN HEMT installed Each

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 CMPA901A035F 15

For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703
www.wolfspeed.com/RF

Sales Contact
[email protected]

RF Product Marketing Contact

[email protected]

Notes
Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringe-
ment of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.

© 2019 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.

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