WSD4070DN33

N-Channel MOSFET

General Description Product Summery

The WSD4070DN33 is the highest performance RDS(ON)
BVDSS ID
trench N-Channel MOSFETs with extreme high cell
density, which provide excellent RDS(ON) and gate 40V 4.5mΩ 68A
charge for most of the synchronous buck converter
applications.

The WSD4070DN33 meet the RoHS and Green Applications

Product requirement, 100% EAS guaranteed with ⚫ High Frequency Point-of-Load Synchronous
full function reliability approved. Buck Converter for MB/NB/UMPC/VGA
⚫ Networking DC-DC Power System
⚫ Load Switch
Features
⚫ Advanced high cell density Trench technology
⚫ Super Low Gate Charge DFN3X3-8L Pin Configuration
⚫ Excellent CdV/dt effect decline D1 (5,6,7,8)

⚫ 100% EAS Guaranteed (4)

⚫ Green Device Available G1

S1 (1,2,3)

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 40

V
VGS Gate-Source Voltage ±20
ID @TC =25°C Continuous Drain Current, VGS @ 10V 7 68
ID @TC =100°C 7 35 A
Continuous Drain Current, VGS @ 10V
IDM @TC =25°C 3 144
Pulsed Drain Current
EAS Avalanche Energy, Single Pulse (L=0.3mH) 80 mJ
IAS Avalanche Current 40 A
PD @TA =25°C 1 3.1
Total Power Dissipation
W
PD @TA =70°C 1 2.0
Total Power Dissipation
TSTG Storage Temperature Range -55 to 150
°C
TJ Operating Junction Temperature Range -55 to 150

Thermal Data

Symbol Parameter Typ. Max. Units

RθJA 1 --- 60
Thermal Resistance, Junction-to-Ambient
°C/W
RθJC 1 --- 2.8
Thermal Resistance, Junction-to-Case

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 WSD4070DN33
N-Channel MOSFET

Electrical Characteristics (TJ =25°C, Unless Otherwise Noted)

Symbol Parameter Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS =0V , ID =250μA 40 --- --- V

VGS =10V , ID =7A --- 4.5 5.5
RDS(ON) 2 mΩ
Static Drain-Source On-Resistance
VGS =4.5V , ID =5A --- 5.3 7.6
VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V
VGS =VDS , ID =250μA
∆VGS(th) VGS(th) Temperature Coefficient --- -6.06 --- mV/°C
VDS =40V , VGS =0V , TJ =25°C --- --- 2.0
IDSS Drain-Source Leakage Current μA
VDS =40V , VGS =0V , TJ =55°C --- --- 10
IGSS Gate-Source Leakage Current VGS =±20V , VDS =0V --- --- ±100 nA
gfs Forward Transconductance VDS =5V , ID =20A --- 67 --- S
Rg Gate Resistance VDS =0V , VGS =0V , f = 1.0MHz --- 0.8 1.5 Ω
Qg Total Gate Charge (10V) --- 28 ---
Qgs Gate-Source Charge VDS =20V , VGS =10V , IDS =20A --- 3.9 --- nC
Qgd Gate-Drain Charge --- 6.0 ---
Td(on) Turn-On Delay Time --- 7.2 ---
Tr Rise Time VDS =20V , VGS =10V , --- 3.0 ---
ns
Td(off) Turn-Off Delay Time RG =3Ω , RL =1Ω --- 23 ---
Tf Fall Time --- 3.5 ---
Ciss Input Capacitance --- 2420 ---
Coss Output Capacitance VDS =20V , VGS =0V , f = 1.0MHz --- 220 --- pF
Crss Reverse Transfer Capacitance --- 150 ----

Note:
1. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA t≤10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit
for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.
4. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
7. The maximum current rating is package limited.
8. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.

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 WSD4070DN33
N-Channel MOSFET

Typical Characteristics

100 80
10V
4.5 VDS=5V
80
3.5V 60
6V
60
ID (A)

ID(A)
40
125°C
40
VGS=3V
20
20
25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 1.8
Normalized On-Resistance

7
1.6 VGS=10V
VGS=4.5V ID=20A
6
Ω)
RDS(ON) (mΩ

1.4
17
5
5
1.2 2
4 VGS=4.5V
10
ID=15A
3 VGS=10V 1

2 0.8
0 5 1510 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Tem
18perature
Voltage (Note E)
(Note E)

1.0E+02
15
ID=20A
1.0E+01
12
40
1.0E+00
Ω)

9
RDS(ON) (mΩ

125°C 1.0E-01 125°C

IS (A)

6 1.0E-02
25°C
1.0E-03
3 25°C

1.0E-04
0
2 4 6 8 10 1.0E-05
VGS (Volts) 0.0 0.2 0.40.6 0.8 1.0 1.2
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 WSD4070DN33
N-Channel MOSFET

Typical Characteristics (Cont.)

10 2500
VDS=20V
ID=20A Ciss
8 2000

Capacitance (pF)
VGS (Volts)

6 1500

4 1000
Coss

2 500
Crss

0 0
0 5 10 15 20 25 30 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 160 TJ(Max)=150°C

10µs
RDS(ON) TC=25°C
limited
Power (W)
ID (Amps)

10.0 100µs 120 17

DC 1ms 5
10ms
1.0 80 2
10
TJ(Max)=150°C
0.1 TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC In descending order
Zθ JC Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=3.4°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 WSD4070DN33
N-Channel MOSFET

Typical Characteristics (Cont.)

1000 40
IAR (A) Peak Avalanche Current

35

Power Dissipation (W)

30

TA=25°C 25
100 TA=100°C 20

15
TA=150°C TA=125°C
10

10 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

50 10000

TA=25°C
40 1000
Current rating ID(A)

Power (W)

30 17
100 5
2
20
10
10
10

1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 WSD4070DN33
N-Channel MOSFET

Packaging information

Dim in mm
Symbol
min typ max
A 0.6 0.75 0.9
b 0.2 0.3 0.4
C 0.15 0.2 0.25
D 3 3.1 3.2
D1 2.3 2.45 2.6
E 3.15 3.3 3.45
E1 1.43 1.73 1.93
E2 2.9 3.05 3.2
e 0.65BSC
H 0.2 0.35 0.5
K 0.57 0.77 0.87
L 0.3 0.4 0.5
L1/L2 0.1REF
θ 8° 10° 13°
N 0 0.15

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 Attention

1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life−support systems, aircraft's control systems, or
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