Silicon N-Channel Power MOSFET

○
R

CS150N03 A8

General Description： VDSS 30 V

CS150N03 A8, the silicon N-channel Enhanced ID 150 A
VDMOSFETs, is obtained by advanced trench Technology PD (T C=25℃) 100 W

which reduce the conduction loss, improve switching RDS(ON)Typ 2.8 mΩ

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤3.5mΩ)
l Low Gate Charge (Typical Data:75nC)

l Low Reverse transfer capacitances(Typical:800pF)

l 100% Single Pulse avalanche energy Test
Applications：
UPS,Inverter,Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 30 V
Continuous Drain Current 150 A
ID
Continuous Drain Current T C = 100 °C 120 A
a1
IDM Pulsed Drain Current 600 A
VGS Gate-to-Source Voltage ±20 V
a2
EAS Single Pulse Avalanche Energy 1300 mJ
a3
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
Power Dissipation 100 W
PD
Derating Factor above 25°C 0.67 W/℃
TJ，T stg Operating Junction and Storage Temperature Range –55 to 175 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 30 -- -- V
ΔVDSS/ΔT J vdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.08 -- V/℃
VDS = 30V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =24V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VGS=10V,ID =50A -- 2.8 3.5 mΩ
R DS(ON) Drain-to-Source On-Resistance
VGS=4.5V,ID =40A -- 5.0 6.5 mΩ
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 1.0 3.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS =10V, ID =15A -- 100 -- S
C iss Input Capacitance -- 10000 --
VGS = 0V VDS = 25V
C oss Output Capacitance f = 1.0MHz -- 940 -- pF
C rss Reverse Transfer Capacitance -- 800 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 22 --
tr Rise Time ID =1A VDD = 15V -- 20 --
VGS = 10V RG = 6Ω ns
td(OFF) Turn-Off Delay Time -- 145 --
tf Fall Time -- 74 --
Qg Total Gate Charge -- 75
ID =16A V DD =15V
Qgs Gate to Source Charge VGS = 10V -- 22 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 28 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 150 A
ISM Maximum Pulsed Current (Body Diode) -- -- 600 A
VSD Diode Forward Voltage IS =150A,V GS=0V -- -- 1.5 V
trr Reverse Recovery Time IS =20,Tj = 25°C -- 52 ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge V GS=0V -- 53 nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 1.5 ℃/W
R θJA Junction-to-Ambient 62 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=1.0mH, ID=53.5A, Start T J =25℃
a3
：ISD =20A,di/dt ≤100A/us,VDD≤BV DS, Start T J=25℃

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Characteristics Curve：

Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature

Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics

Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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Figure 6 Maximum Peak Current Capability

Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current

Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature

Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage

Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability

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Test Circuit and Waveform

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Package Information

Values(mm)
Items
MIN MAX
A 10.00 10.60
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 3.30 3.80
6.40 7.50
6.70 7.90
L 7.20 8.00
7.50 8.60
12.7 14.7
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-220AB Package
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The name and content of poisonous and harmful material in products

Part’s Name Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail：214061 http://www. crhj.com.cn
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Application and Service：Post：214061 Tel / Fax：0510-85807228-3399 / 2227

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