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MODULE 3- PN Junction PPT2

The document discusses the switching characteristics of PN junction diodes, focusing on the behavior during forward and reverse bias conditions, including the concept of reverse recovery time. It also covers depletion layer capacitance for abrupt and arbitrary doping profiles, as well as storage capacitance in forward and reverse-biased diodes. Additionally, the document explains breakdown mechanisms such as Zener and avalanche breakdown, detailing their conditions and underlying principles.

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Karthik Bhandary
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8 views17 pages

MODULE 3- PN Junction PPT2

The document discusses the switching characteristics of PN junction diodes, focusing on the behavior during forward and reverse bias conditions, including the concept of reverse recovery time. It also covers depletion layer capacitance for abrupt and arbitrary doping profiles, as well as storage capacitance in forward and reverse-biased diodes. Additionally, the document explains breakdown mechanisms such as Zener and avalanche breakdown, detailing their conditions and underlying principles.

Uploaded by

Karthik Bhandary
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MODULE 3

PN Junction Diode – PPT 2


Dr. A.Brintha Therese
Switching Characteristics
• A diode when functioning in its forward bias condition has its
depletion region shrinked to almost nothing. That is, the external
supply voltage applied will be used by the device to overcome the
barrier potential which gets imposed on it due to the presence of
immobile charge carriers in its depletion region. Now, imagine that
one reverse biases this voltage by inverting the polarities connected
to the terminals of the diode. Ideally, the act of doing so should
bring the diode from its ON state to OFF state immediately. That is,
the diode which is conducting current in its forward direction is
expected to stop conducting instantly.
• However, practically, this cannot be experienced as the flow of
majority charge carriers through the diode does not cease right at the
moment of reversing the bias. They will, in fact, take a finite amount
of time before stopping and this time is known as reverse recovery
time of the diode.
Depletion layer Capacitance for Abrupt
Junction
When bias voltage changes width of the
depletion layer will also change. Majority flow in
and out like charging and discharging of
capacitor
Depletion layer Capacitance for Abrupt
Junction
• For one sided abrupt junction the depletion layer capacitance
is calculated using:
dQD qN D s V 1 2(Vbi  V )
C A  Cjo 1   2 
dV 2(Vbi  V ) Vbi Cj qA2 N D s
• C-V graph can be used to measure doping concentration and
built in potential
Depletion layer Capacitance for
Arbitrary Doping Profile
Depletion layer Capacitance for
Arbitrary Doping Profile
• Eqn Cj can be used to obtain doping profile
Storage Capacitance
• Diffusion capacitance Cd
• Dominates during Forward bias
Storage Capacitance
In a general case, diffusion constant CD is caused by the diffusion
of both the holes in the n-regions and electrons in the P-region,
resulting in diffusion capacitance CDp and CDn respectively. The
total diffusion capacitance CD is the sum of CDp and CDn.
In fact, in a forward diode, there are present both the diffusion
capacitance CD and the transition capacitance CT, but CD>>CT.

Similarly, in reverse-biased diode, these are present both CD and


CT. But CD<<CT. Hence, in a reverse-biased diode, we may
neglect CD and we need to consider only CT.
Break Down in Diode
• For high reverse voltage breakdown occurs
Zener Breakdown
• Occurs in heavily doped Diode

The Zener effect: (a) heavily doped junction at equilibrium; (b) reverse bias with electron
tunneling from p to n; (c) I–V characteristic.
Avalanche Breakdown
• In lightly doped diode
• Very high reverse voltage
• Due to impact ionization
• Avalanche multiplication
Avalanche Breakdown
• P- probability P of creating EHP due to an ionizing collision
• with the lattice while being accelerated a distance W through
the transition region.
• nin -electrons entering from the p side,
• Pnin – Number of secondary EHP generated due to ionizing
collisions.
• (Pnin )P -ionizing collisions and tertiary pairs.
• Summing up the total number of electrons out of the region
at n after many collisions,
• we have total number of electron coming out
niout = nin(1 + P + P2 + P3 + … )
Avalanche Breakdown

Multiplication factor
Avalanche Breakdown
Probability of ionizing collision in terms of ionizing coeffficient
𝑊
• 𝑃= 0
𝛼𝑑𝑥
• For M should be infinte
𝑊
• 𝑃= 0
𝛼𝑑𝑥 =1
𝑏 𝑚
• 𝛼 = 𝛼0 exp[− ]
𝐸
1
• 𝑀= 𝑉𝑟
𝑛
[1− ]
𝑉𝐵𝑅
• Critical electricfield
𝐸𝑐 𝑊 𝜀𝑠 𝐸𝑐2
• 𝑉𝐵𝑅 = =
2 2𝑞𝑁𝐷
Avalanche Breakdown

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