NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,

THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
S.
No. Objective Questions (MCQ /True or False / Fill up with Choices ) BTL
How many junction/s do a diode consist?

A) 0
1 B) 1 L4
C) 2
D) 3

If the positive terminal of the battery is connected to the anode of the diode, then it is known
as

A) Forward Biased
2 L4
B) Reverse Biased
C) Equilibrium
D) Schottky Barrier

During reverse bias, a small current develops known as

A) Forward Current
3 B) Reverse Current L4
C) Reverse Saturation Current
D) Active Current

If the voltage of the potential barrier is V0. A voltage V is applied to the input, at what
moment will the barrier disappear?

A) V< V0
4 L4
B) V= V0
C) V> V0
D) V<< V0

During the reverse biased of the diode, the back resistance decrease with the increase of the
temperature. Is it true or false?
5 L4
A) True
B) False

What is the maximum electric field when Vbi=2V , VR=5V and width of the semiconductor is
7cm?
6 L4
A) -100V/M
B) -200V/M
C) 100V/M
Prepared By: Mr.M.Idhayachandran, AP/ECE Page 1 of 7
 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
D) 200V/M

When the diode is reverse biased with a voltage of 6V and Vbi=0.63V. Calculate the total
potential.

A) 6V
7 L4
B) 6.63V
C) 5.27V
D) 0.63V

Which of the following isn’t a type of rectifier?

A) Precision Half-Wave Rectifier

8 B) Bridge Rectifier L4
C) Peak Rectifier
D) None Of The Mentioned

For a half-wave rectifier having diode voltage VD and supply input of VI, the diode conducts
for π – 2Θ, where Θ is given by

A) Tan -1 VD/VI
9 L4
B) Tan-1 VD/VI – VI
C) Sin-1 VD/VI
D) Sin-1 VD/VI – VI

Bridge rectifier is an alternative for

A) Full Wave Rectifier

10 B) Peak Rectifier L4
C) Half Wave Rectifier
D) None Of The Mentioned

A simple diode rectifier has ‘ripples’ in the output wave which makes it unsuitable as a DC
source. To overcome this one can use

A) A Capacitor In Series With A The Load Resistance

11 L4
B) A Capacitor In Parallel To The Load Resistance
C) Both Of The Mentioned Situations Will Work
D) None Of The Mentioned Situations Will Work

Which of the following is true about the resistance of a Zener diode?

12 L4
A) It Has An Incremental Resistance
B) It Has Dynamic Resistance
Prepared By: Mr.M.Idhayachandran, AP/ECE Page 2 of 7
 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
C) The Value Of The Resistance Is The Inverse Of The Slope Of The I-V Characteristics
Of The Zener Diode
D) All Of The Mentioned

In Zener diode, for currents greater than the knee current, the v-i curve is almost

A) Almost A Straight Line Parallel To Y-Axis

13 B) Almost A Straight Line Parallel To X-Axis L4
C) Equally Inclined To Both The Axes With A Positive Slope
D) Equally Inclined To Both The Axes With A Negative Slope

Zener diodes can be effectively used in voltage regulator. However, they are these days being
replaced by more efficient

A) Operational Amplifier
14 L4
B) MOSFET
C) Integrated Circuits
D) None Of The Mentioned

A 9.1-V zener diode exhibits its nominal voltage at a test current of 28 mA. At this current the
incremental resistance is specified as 5 Ω. Find VZ0 of the Zener model.

A) 8.96V
15 L4
B) 9.03V
C) 9.17V
D) 9.24V

A shunt regulator utilizing a zener diode with an incremental resistance of 5 Ω is fed through
an 82-Ω resistor. If the raw supply changes by 1.0 V, what is the corresponding change in the
regulated output voltage?

16 A) 72.7 Mv L4
B) 73.7 Mv
C) 74.7 Mv
D) 75.7 Mv

Which of the following is method to model a diode’s forward characteristics?

A) Iteration Method
B) Graphical Method
17 L4
C) Constant-Voltage Drop Model
D) All Of The Mentioned

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 3 of 7

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
A voltage regulator needs to provide a constant voltage in spite of the fact that there may be

A) Change In The Load Current Drawn From The Terminals Of The Regulator
18 B) Change Of The DC Power Supply That Feeds The Regulator Circuit L4
C) None Of The Mentioned
D) All Of The Mentioned

Calculate the %age change in the regulated voltage caused by a change of ±10% in the input
voltage. (RL is not connected to the circuit)

A) ± 0.5%
19 L4
B) ± 1%
C) ± 5%
D) ± 10%

Calculate the change in the voltage when RL is connected as shown

A) -10 Ma
20 B) -15 Ma L4
C) -20 Ma
D) -25 Ma

The value of the diode small-signal resistance rd at bias currents of 0.1 mA is

A) 250 Ω
21 B) 25 Ω L4
C) 2.5 Ω
D) 0.25 Ω

The graphical method of modeling a diode characteristics is based on

A) Iteration Method
22 B) Constant Voltage Drop Method L4
C) Small Signal Approximation
D) Exponential Method

The other name for bias point is

A) Quiescent Point
B) Node Point
23 L4
C) Terminal Point
D) Static Point

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 4 of 7

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
In iteration method for modelling a diode the answer obtained by each subsequent iteration is

A) Is Close To The True Value

24 B) Is Close To The Value Obtained By Exponential Method L4
C) All Of The Mentioned
D) None Of The Mentioned

A light emitting diode is

A) Heavily Doped
25 B) Lightly Doped L4
C) Intrinsic Semiconductor
D) Zener Diode

Which of the following materials can be used to produce infrared LED?

A) SI
26 B) GAAS L4
C) CDS
D) PBS

The reverse breakdown voltage of LED is very low.

27 A) True L4
B) False

What should be the band gap of the semiconductors to be used as LED?

A) 0.5 Ev
28 B) 1 Ev L4
C) 1.5 Ev
D) 1.8 Ev

What should be the biasing of the LED?

A) Forward Bias
29 B) Reverse Bias L4
C) Forward Bias Than Reverse Bias
D) No Biasing Required

Which process of the Electron-hole pair is responsible for emitting of light?

30 L4
A) Generation
B) Movement
Prepared By: Mr.M.Idhayachandran, AP/ECE Page 5 of 7
 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
C) Recombination
D) Diffusion

Which of the following is not a characteristic of LED?

A) Fast Action
31 B) High Warm-Up Time L4
C) Low Operational Voltage
D) Long Life

A device which converts electrical energy in the form of a current into optical energy is called
as

A) Optical Source
32 L4
B) Optical Coupler
C) Optical Isolator
D) Circulator

How many types of sources of optical light are available?

A) One
33 B) Two L4
C) Three
D) Four
The radiation emission process (emission ofa proton at frequency) can occur in
ways.

A) Two
34 L4
B) Three
C) Four
D) One

Which process gives the laser its special properties as an optical source?

A) Dispersion
35 B) Stimulated Absorption L4
C) Spontaneous Emission
D) Stimulated Emission

An incandescent lamp is operating at a temperature of 1000K at an operating frequency of

5.2×1014 Hz. Calculate the ratio of stimulated emission rate to spontaneous emission rate.
36 L4
A) 3×10-13
B) 1.47×10-11
C) 2×10-12
Prepared By: Mr.M.Idhayachandran, AP/ECE Page 6 of 7
 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY,
THENI. Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Biasing of Discrete BJT,JFET
Unit No 1 Date 30.09.2020
and MOSFET
OBJECTIVE TYPE QUESTION BANK
D) 1.5×10-13

The lower energy level contains more atoms than upper level under the conditions of

A) Isothermal Packaging
37 B) Population Inversion L4
C) Thermal Equilibrium
D) Pumping

in the laser occurs when photon colliding with an excited atom causes
the stimulated emission of a second photon.

A) Light Amplification
38 L4
B) Attenuation
C) Dispersion
D) Population Inversion

A semiconductor laser crystal of length 5 cm, refractive index 1.8 is used as an optical
source. Determine the frequency separation of the modes.
A) 2.8 GHZ
39 L4
B) 1.2 GHZ
C) 1.6 GHZ
D) 2 GHZ
Considering the values given below, calculate the mode separation in terms of free space
wavelength for a laser. (Frequency separation = 2GHz, Wavelength = 0.5 μm)

A) 1.4×10-11
40 L4
B) 1.6×10-12
C) 1×10-12
D) 6×10-11

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 7 of 7