NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.

Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
S.
Objective Questions (MCQ /True or False / Fill up with Choices ) BTL
No.
A transistor with ß = 120 is biased to operate at a dc collector current of 1.2 mA. Find the
value of gm.

A) 12ma/V
1 B) 24 Ma/V L2
C) 36 Ma/V
D) 48 Ma/V

A transistor with ß = 120 is biased to operate at a dc collector current of 1.2 mA. Find the
value of Rp?

A) 625 Ohm
2 L2
B) 1250 Ohm
C) 2500 Ohm
D) 5000 Ohm

A transistor with ß = 120 is biased to operate at a dc collector current of 1.2 mA. Find the
value of Re.

A) 2.5 Ohm
3 L2
B) 20.6 Ohm
C) 25.2 Ohm
D) 30.4 Ohm

A transistor operating with nominal gm of 60 mA/V has a ß that ranges from 50 to 200. Also,
the bias circuit, being less than ideal, allows a 20% variation in Ic. What is the smallest value
found of the resistance looking into the base?

4 A) 347 Ohm L2
B) 694 Ohm
C) 1041 Ohm
D) 1388 Ohm

A transistor operating with nominal gm of 60 mA/V has a ß that ranges from 50 to 200. Also,
the bias circuit, being less than ideal, allows a 20% variation in Ic. What is the largest value
found of the resistance looking into the base?

5 A) 1050 Ohm L2
B) 21000 Ohm
C) 3150 Ohm
D) 4200 Ohm

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 1 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit No 3 Unit Name : Single Stage FET, MOSFET Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
A designer wishes to create a BJT amplifier with a gm of 50 mA/V and a base input resistance
of 2000 O or more. What is the minimum ß he can tolerate for the transistor used?

A) 100
6 L2
B) 150
C) 200
D) 250

A designer wishes to create a BJT amplifier with a gm of 50 mA/V and a base input resistance
of 2000 O or more. What emitter bis current should he choose?

A) 1.06 ma
7 B) 1.16 ma L2
C) 1.26 ma
D) 1.36 ma

Which of the following is true?

A) Ib = ß Ic
8 B) Ib = ß + 1/ Ic L2
C) Ib = Ic/ß
D) Ib = Ic/ ß – 1

The SI units of transconductance is

A) Ampere/ Volt
9 B) Volt/ Ampere L2
C) Ohm
D) Siemens

Which of the following represents the correct mathematical form of the term denoted by the
symbol Rp?

A) ß/Gm
10 L2
B) Vt/Ib
C) All Of The Mentioned
D) None Of The Mentioned

What is trans-conductance?

A) Ratio Of Change In Drain Current To Change In Collector Current

11 L2
B) Ratio Of Change In Drain Current To Change In Gate To Source Voltage
C) Ratio Of Change In Collector Current To Change In Drain Current
d) Ratio of change in collector current to change in gate to source voltage

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 2 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
For a FET, graph is drawn by taking voltage V GS in X axis and drain current in Y axis, if the
value of X changes from 10 to 20 results in change in value of Y axis from 2 to 3. What is the
value of trans conductance?

12 A) 1 L2
B) 2
C) 0.1
D) 0.01

The slope obtained in VGS vs ID was 0.002. What is the value ofgm?

A) 1
13 B) 2 L2
C) 0.002
D) 0

Which of the following is an expression for gm0?

A) Gm0 = IDSS/Vp
14 B) Gm0 = 2IDSS/|Vp| L2
C) Gm0 = IDSS/5Vp
D) Gm0 = IDSS/2Vp

Find the maximum value of g m for FET with IDSS=10mA, Vp=-2V, VGS=5V?

A) 10ms
15 B) 20ms L2
C) 1ms
D) 0

Find the value of g m for FET with IDSS=8mA, Vp=4V, VGS=-0.5V?

A) 1ms
16 B) 2ms L2
C) 3ms
D) 3.5ms

A FET has IDSS=4ID and gm0 = 10mS then gm =

A) 10ms
17 B) 20ms L2
C) 5ms
D) 14ms

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 3 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
Determine the value of output impedance for JFET, if the value of gm =1mS?

A) 1Kohm
18 B) 0 L2
C) 100Kohm
D) 5Kohm

In a small signal equivalent model of an FET, What does g m VGS stand for?

A) A Pure Resistor
19 B) Voltage Controlled Current Source L2
C) Current Controlled Current Source
D) Voltage Controlled Voltage Source

Given yfs = 3.6mS and yos = 0.02mS, determine r0?

A) 100Kohm
20 B) 50Mohm L2
C) 50Kohm
D) 20Kohm

Consider a voltage amplifier having a frequency response of the low-pass STC type with a dc
gain of 60 dB and a 3-dB frequency of 1000 Hz. Then the gain db at

A) F = 10 Hz Is 55 Db
21 L2
B) F = 10 Khz Is 45 Db
C) F = 100 Khz Is 25 Db
D) F = 1Mhz Is 0 Db

STC networks can be classified into two categories: low-pass (LP) and high-pass (HP). Then
which of the following is true?

A) HP Network Passes Dc And Low Frequencies And Attenuate High Frequency And
Opposite For LP Network
B) LP Network Passes Dc And Low Frequencies And Attenuate High Frequency
And Opposite For HP Network
22 C) HP Network Passes Dc And High Frequencies And Attenuate Low Frequency And L2
Opposite For LP Network
D) LP Network Passes Low Frequencies Only And Attenuate High Frequency And
Opposite For HP Network

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 4 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
Single-time-constant (STC) networks are those networks that are composed of, or can be
reduced to

A) One Reactive Component (L Or C) And A Resistance (R)

23 L2
B) Only Capacitive Component (C) And Resistance (R)
C) Only Inductive Component (L) And Resistance (R)
D) Reactive Components (L, C Or Both L And C) And Resistance (R)

The signal whose waveform is not effected by a linear circuit is

A) Triangular Waveform Signal

24 B) Rectangular Waveform Signal L2
C) Sine/Cosine Wave Signal
D) Sawtooth Waveform Signal

Which of the following is not a classification of amplifiers on the basis of their frequency
response?

A) Capacitively Coupled Amplifier

25 L2
B) Direct Coupled Amplifier
C) Band pass Amplifier
D) None Of The Mentioned

General representation of the frequency response curve is called

A) Bode Plot
26 B) Miller Plot L2
C) Thevenin Plot
D) Bandwidth Plot

Under what condition can the circuit shown be called a compensated attenuator.

27 L2

A) C1R1 = C2R2
Prepared By: Mr.M.Idhayachandran, AP/ECE Page 5 of 8
 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK
B) C1R2 = C2R1
C) C1C2 = R1R2
D) R1 = 0

When a circuit is called compensated attenuator?

A) Transfer Function Is Directly Proportional To The Frequency

28 B) Transfer Function Is Inversely Proportional To The Frequency L2
C) Transfer Function Is Independent Of The Frequency
D) Natural Log Of The Transfer Function Is Proportional To The Frequency

Which of the following is true?

A) Coupling Capacitors Causes The Gain To Fall Off At High Frequencies

29 B) Internal Capacitor Of A Device Causes The Gain To Fall Off At Low Frequencies L2
C) All Of The Mentioned
D) None Of The Mentioned

Which of the following is true?

A) Monolithic IC Amplifiers Are Directly Coupled Or Dc Amplifiers

30 B) Televisions And Radios Use Tuned Amplifiers L2
C) Audio Amplifiers Have Coupling Capacitor Amplifier
D) All Of The Mentioned

We cannot use h-parameter model in high frequency analysis because

A) They All Can Be Ignored For High Frequencies

31 B) Junction Capacitances Are Not Included In It L2
C) Junction Capacitances Have To Be Included In It
D) Ac Analysis Is Difficult For High Frequency Using It

Consider a CE circuit, where trans-conductance is 50mΩ-1, diffusion capacitance is 100 pF,

transition capacitance is 3 pF. IB = 20μA. Given base emitter dynamic resistance, rbe = 1000
Ω, input VI is 20*sin(107t). What is the short circuit current gain?

A) 30
32 B) 35 L2
C) 40
D) 100

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 6 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02
Unit Name : Single Stage FET, MOSFET
Unit No 3 Date 30.09.2020
Amplifiers
OBJECTIVE TYPE QUESTION BANK

Given that transition capacitance is 5 pico F and diffusion capacitance is 80 pico F, and base
emitter dynamic resistance is 1500 Ω, find the β cut-off frequency.

A) 7.8 X 106 Rad/S

33 L2
B) 8.0 X 106 Rad/S
C) 49.2 X 106 Rad/S
D) 22.7 X 106 Rad/S

For given BJT, β=200. The applied input frequency is 20 Mhz and net internal capacitance is
100 pF. What is the CE short circuit current gain at β cut-off frequency?

A) 200
34 B) 100 L2
C) 141.42
D) 440.2
View Answer

Given that β=200, input frequency is f= 20Mhz and short circuit current gain is A=100. What
is the unity gain frequency?

A) 2300 Mhz
35 L2
B) 2000 Mhz
C) 2500 Mhz
D) 3000 Mhz

Gain bandwidth frequency is GBP= 3000 Mhz. The cut-off frequency is f=10Mhz. What is
the CE short circuit current gain at the β cutoff frequency?

A) 212
36 L2
B) 220
C) 300
D) 200

Which of the statement is incorrect?

A) At Unity Gain Frequency The CE Short Circuit Current Gain Becomes 1

B) Unity Gain Frequency Is The Same As Gain Bandwidth Product Of BJT
C) Gain Of BJT Decreases At Higher Frequencies Due To Junction Capacitances
37 L2
D) Β- Cut-Off Frequency Is One Where The CE Short Circuit Current Gain
Becomes Β/2

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 7 of 8

 NADAR SARASWATHI COLLEGE OF ENGINEERING AND TECHNOLOGY, THENI.
Format
Course/Branch : B.E/ ECE Year / Semester : II/III No. NAC/TLP-07a.13
Subject Code :EC8351 Subject Name : Electronic Circuits - I Rev. No. 02

Unit No 3 Unit Name : Single Stage FET, MOSFET Date 30.09.2020

Amplifiers
OBJECTIVE TYPE QUESTION BANK

Given a MOSFET where gate to source capacitance is 300 pF and gate to drain capacitance is
500 pF. Calculate the gain bandwidth product if the transconductance is 30 mΩ -1.

A) 5.98 Mhz
38 L2
B) 4.9 Mhz
C) 6.5Mhz
D) 5.22Mhz

In an RC coupled CE amplifier, when the input frequency increases, which of these are
incorrect?

A) Reactance CSH Decreases

39 L2
B) Voltage Gain Increases
C) Voltage Gain Decreases Due To Shunt Capacitance
D) An RC Coupled Amplifier Behaves Like A Low Pass Filter

Consider an RC coupled amplifier at low frequency. Internal voltage gain is -120. Find the
voltage gain magnitude, when given that collector resistance = 1kΩ, load = 9kΩ, collector
capacitance is 0. is 0.1μF, and input frequency is 20Hz.

40 A) 120 L2
B) 12
C) 15
D) -12

Prepared By: Mr.M.Idhayachandran, AP/ECE Page 8 of 8