SS34-General Semiconductor
SS34-General Semiconductor
DO-214AB
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
0.126 (3.20) ♦ Low profile package
♦ Built-in strain relief, ideal for automated placement
0.245 (6.22)
0.114 (2.90)
0.220 (5.59)
♦ Easy pick and place
♦ Metal silicon junction,
0.280 (7.11) majority carrier conduction
0.260 (6.60) ♦ Low power loss, high efficiency
♦ High current capability, low forward voltage drop
0.012 (0.305)
♦ For use in low voltage, high frequency inverters, free
0.006 (0.152)
wheeling, and polarity protection applications
0.103 (2.62)
♦ High temperature soldering:
0.079 (2.06) 250°C/10 seconds at terminals
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted 0.55 x 0.55” (14 x 14mm) copper pad areas
10/19/98
RATINGS AND CHARACTERISTIC CURVES SS32 THRU SS36
FIG. 1 - FORWARD CURRENT DERATING CURVE FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
AT RATED TL
SS32 - SS34
8.3ms SINGLE HALF SINE-WAVE
SS35 & SS36
80 (JEDEC Method)
AMPERES
60
AMPERES
20
1.0
0
1 10 100
NUMBER OF CYCLES AT 60HZ
0
50 60 70 80 90 100 110 120 130 140 150 160
LEAD TEMPERATURE,°C FIG. 4- TYPICAL REVERSE CURRENT
CHARACTERISTICS
20
10.0 TJ=150°C 1
PULSE WIDTH=300µs
1% DUTY CYCLE
MILLIAMPERES
TJ=25°C TA=75°C
AMPERES
1
0.1
0.1
0.01
SS32 - SS34 TA=25°C
SS35 & SS36
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SS32 - SS34
INSTANTANEOUS FORWARD VOLTAGE, SS35 & SS36
VOLTS 0.001
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
TJ=25°C
f=1.0 MHz 100
Vsig=50mVp-p
JUNCTION CAPACITANCE, pF
10.0
100
SS32 - SS34
SS35 & SS36 0.1
10 0.01 0.1 1 10.0 100
0.1 1 10 100 t, PULSE DURATION, sec.
REVERSE VOLTAGE, VOLTS