Compact UWB bandpass filter with shown in Fig.

2a which contributes two attenuation poles on each

reconfigurable notched band side of the passband. Simulated results are presented in Fig. 2b.

K. Rabbi, L. Athukorala, C. Panagamuwa, J.C. Vardaxoglou 0

and D. Budimir Y0 Y0 Y0 Y0
–40

|S21|, dB
Yia
A compact bandpass filter is presented for ultra-wideband (UWB) Yi
/2 –80
/2 conventional BPF
applications with a reconfigurable notched band to reject unwanted Yin1 Yin2 modified BPF
Yib
signals from the WiMAX systems. A single pin diode is used for the
YL /2
purpose of switching the notch. An optical switch, comprised of a 2 3 4 5 6
frequency, GHz
silicon dice activated using near infrared light is also investigated as
an alternative to the pin diode. While the switch is in the ON state a b
this reconfigurable filter behaves as a bandpass filter with a notch at
3.5 GHz and a full band response is obtained in the OFF state. The Fig. 2 Transmission line model of short to open-circuited stub configuration
filter offers excellent performance for the lower-band frequency of a (Fig. 2a), and comparison between conventional and modified BPF (Fig. 2b)
UWB system, ranging from 3.1 to 5.0 GHz and exhibits very low pass-
band insertion loss. Also, transmission zeros are generated at the pass- Equivalence of the two input admittance Yin1 and Yin2 in Fig. 2a can
band edges to enhance the signal selectivity. A filter sample has been be expressed by (1) with an assumption Yia = XiYib:
designed and fabricated to provide experimental verification on the
proposed filter. A good agreement has been achieved between simu- Yi (Xi tan2 u − 1)
lated and measured results with both the pin diode as well as the Yia =
(1 + Xi ) tan2 u
optical switch. The proposed reconfigurable filter with notched band
 (1)
was able to achieve 40% size reduction as compared to an embedded P v1
Xi = cot2 v1 /v0 , v/v0
open-circuited stub. 2 v0
where θ = πω/2ω0 and ω∞ is a frequency at which the shunt lines present
Introduction: Ultra-wideband (UWB) systems have aroused a great deal a short circuit to the main transmission line and cause infinite
of attention and a number of UWB bandpass filter design techniques attenuation.
have been proposed in the past year such as multi-mode resonators
(MMR) [1, 2] and multilayer aperture-coupled patches [3] in order to Proposed UWB filter with notch structure: To reject the undesired
achieve compactness, but have suffered from poor attenuation poles WiMAX signal at 3.5 GHz, a section of L-shaped parallel coupled trans-
between passband edges. On the other hand, the UWB communication mission line with a grounded end is added, as illustrated in Fig 3a. The
spectrum covers a very wide frequency band and is overlapped with electrical length of the stub is chosen to be 90° at 3.5 GHz in order to
WiMAX (3.5 GHz) in the lower band and with WLAN (5.8 GHz) in create a transmission zero at this frequency as coupled lines coupling
the upper band. These services potentially interfere with UWB signals maximise at βl = λg/4. The switch is placed as shown in Fig 3b.When
and therefore may cause signal distortion. One of the possible and effec- the switch (either pin diode or optical switch) is in the ON state, the
tive solutions for this problem is to realise narrow rejection bands within joined section length is equivalent to λg/4 and it reaches a maximum
the passband of a UWB bandpass filter. The reason tends to focus on coupling stage which contributes a narrow reject band within the filter
reconfigurable notch features in order to avoid the possibility of interfer- passband at 3.5 GHz. Conversely, in the off state, there is no connection
ence on the increasingly crowded spectrum and achieve multi- between the open-stub and the L-shaped section provides full passband
functionality using a single filter. Several UWB bandpass filters with response due to low coupling between two coupled lines.
notch bands have been reported [4–6].
In this Letter, we present a compact UWB filter with a reconfigurable
notched band. Two identical filters were fabricated, where one was Ce Ce
3 4 3 L 4
tested using a pin switch as it offers high power handling capability, Z0e
Z0o Co
quick switching speed with reduced cost, easier packaging and a Co

1 2
lower bias voltage. Conversely, the other employed an optical switch 1
Ce
L
Ce
2 11 2.4
which offers high power handling capability, immunity to electromag- 1.0

netic interference, excellent isolation between the microwave and a b

switch control circuits and very low distortion [7]. Both filters have
little loss, significantly low distortion and high switching speed. Fig. 3 Notch structure
Simulation and experimental results are presented to validate the a Notch equivalent circuit
argument. b Notch layout

The coupling coefficient C (2) in Fig. 3a is defined as

11
L1 L2 C1 L3
C = (Z0e − Z0o )/(Z0e + Z0o ) (2)
1.0

1
11.4
3.4
1.0 2
The resonant frequency fr in (3) is given by
L4 C2 L5 C3
1.1
1.6
4.1 1
5.1
fr = √ (3)
6.1 L6 L7
2P L(Ce + Co )
2
0.5 C4 C5

5.3 0.6
Switching elements: The 0.3 mm gap is overlaid with a pin diode switch
a b
(BAP65-02) as shown above in Fig. 3b in one filter circuit and the other
is overlaid with a 1 × 3 mm silicon dice. The pin diode was modelled by
Fig. 1 Schematic layout (dimensions in mm in Fig. 1a) and equivalent circuit using a capacitor of value 0.8 pF in the OFF state and a resistor value of
of proposed UWB bandpass filter (Fig. 1b)
0.9 Ω in the ON state [7]. The silicon wafer has a conductivity of
L1 = L3 = 0.2 nH, L2 = 5.6 nH, L4 = L5 = 0.403 nH, L6 = 0.524 nH, L7 = 0.202 nH, 16.7 mS/m in the dark which increases to 150 S/m when illuminated
C1 = 0.322 pF, C2 = C3 = 4.5 pF, C4 = 8.4 pF, C5 = 6.0 pF
by 200 mW of 980 nm wavelength laser light [7].

Initial UWB bandpass filter design: The proposed filter as shown in Simulated and measured results: To validate the circuit concept, the
Fig. 1 is a third-order bandpass filter composed of a single λg/2 resona- filter was designed and fabricated on Taconic RF35 substrate with εr =
tor, which is placed initially between a pair of λg/4 short circuited reso- 3.5 and h = 0.76 mm and tested with a pin/optical switch as shown in
nators. To sharpen the out-of-band rejection skirt, the shunt Fig. 4. The overall filter dimension is approximately 0.25λg × 0.23λg,
short-circuited stubs are stretched by two times, i.e. from λg/4 to λg/2 where λg is the microstrip guided wavelength on the substrate at centre
which turns the section from short to open-circuited stub and as frequency. The full wave simulated S-parameters of the filter with pin

ELECTRONICS LETTERS 23rd May 2013 Vol. 49 No. 11

 1350911x, 2013, 11, Downloaded from https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2012.3555 by Anil Nayak - Indian Institute of Technology Indore , Wiley Online Library on [21/07/2024]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons License
diode in ON and OFF states with the corresponding measurements were Conclusion: A microstrip filter with a reconfigurable notched band has
taken with an Agilent vector network analyser E38361A while filters been presented. A single pin diode and an optical switch have been used
with the optical switch were measured using an Anritsu Lightning to reconfigure the notch at 3.5 GHz within the passbands of the UWB
37397D vector network analyser. filter. In this experiment, the proposed filter has shown good agreement
with simulations. Also, promising features of optical switches have been
0 shown as an alternative to the pin diode. In addition, this filter has the
0.8 merit of compact size and easier fabrication. The obtained results indi-
cate that the proposed reconfigurable filter is promising for modern
S-parameters, dB

group delay, ns
–20
0.4
UWB systems solving the problem of WiMAX interference allocated
–40
0.0 in the UWB spectrum.
S11 (measured notch on)
S21 (measured notch on)
S11 (simulated noth on)
–60 S21 (simulated noth on)
–0.4
S11 (notch off)
S21 (notch off) © The Institution of Engineering and Technology 2013
3 5 7 10 October 2012
frequency, GHz
a doi: 10.1049/el.2012.3555
0 One or more of the Figures in this Letter are available in colour online.
0.8
K. Rabbi, L. Athukorala and D. Budimir (Wireless Communication
S-parameters, dB

group delay, ns
–20
0.4
Research Group, University of Westminster, London, W1W 6UW,
United Kingdom)
–40
S11 (measured notch on)
S21 (measured notch on)
0.0 E-mail: [email protected]
S11 (simulated noth on)
–60 S21 (simulated noth on)
S11 (notch off) –0.4
C. Panagamuwa and J.C. Vardaxoglou (Wireless Communication
S21 (notch off) Research Group, Loughborough University, Loughborough, United
3 5
frequency, GHz
7 Kingdom)
b
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18, pp. 10–12
3.2% and the attenuation at the centre of the notched band is around
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The small discrepancies between the simulated and measured responses
may be attributed to the various fabrication errors involved and the poor
conductivity of the switches especially for the optical switch.

ELECTRONICS LETTERS 23rd May 2013 Vol. 49 No. 11