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The document is a worksheet for Grade XII Physics focusing on semiconductors, containing multiple-choice questions and assertion-reason type questions about semiconductor properties, conductivity, and p-n junctions. It includes questions on energy levels, diode behavior, and the effects of temperature on conductivity. Additionally, it prompts students to explain concepts related to depletion layers and circuit behavior with diodes.

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19 views3 pages

0f972e718eb982b09cc5b78f6767a8a5

The document is a worksheet for Grade XII Physics focusing on semiconductors, containing multiple-choice questions and assertion-reason type questions about semiconductor properties, conductivity, and p-n junctions. It includes questions on energy levels, diode behavior, and the effects of temperature on conductivity. Additionally, it prompts students to explain concepts related to depletion layers and circuit behavior with diodes.

Uploaded by

rk216458.kk
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SRI SRI RAVISHANKAR VIDYA MANDIR – BANGALORE EAST

SUB: PHYSICS GRADE: XII


Chapter - 14: SEMICONDUCTORS

WORKSHEET 01
1. Identify the property which is not characteristic for a semiconductor?
(a) at a very low temperature, it behaves like an insulator
(b) at higher temperatures two types of charge carriers will cause conductivity
(c) the charge carriers are electrons and holes in the valence band at higher
temperatures
(d) the semiconductor is electrically neutral
2. The energy required by an electron to jump the forbidden band in silicon at room
temperature is about
(a) 0.01 eV (b) 0.05 eV (c) 0.7 eV (d) 1.1 eV
3. It is given, n! = 7 × 10"" per metre# and n$ = 5 × 10"% per metre# . The
semiconductor is
(a) p-type (b) intrinsic (c) n-type (d) insulator
4. When an intrinsic semiconductor is doped with a small amount of trivalent impurity,
then
(a) its resistance increases
(b) it becomes a p-type semiconductor
(c) there will be more free electrons than holes in the semiconductor
(d) dopant atoms become donor atoms
5. In an extrinsic semiconductor, the number density of holes is 4 × 10%& m-# , If the
number density of intrinsic carriers is 1.2 × 15 m-# , the number density of electrons in
it is
(a) 1.8 × 10( m-# (b) 2.4 × 10"& m-# (c) 3.6 × 10( m-# (d) 3.2 × 10"& m-#
6. Electrical conductivity of a semiconductor
(a) Decreases with the increase in temperature.
(b) Increases with the increase in temperature.
(c) First increases and then decreases with the increase in temperature.
(d) Does not change with temperature.
7. The threshold voltage for a p-n junction diode used in the circuit is 0.7 V. The type of
biasing and current in the circuit are

(a) Forward biasing, 0 A (b) Reverse biasing, 0 A


(c) Forward biasing, 5 mA (d) Reverse biasing, 2 m A
8. The circuit has two oppositely connected ideal diodes in parallel. What is the current
flowing in the circuit ?

(a) 1.71 A (b) 2.0 A (c) 2.31 A (d) 1.33 A

Questions 9 and 10 are Assertion (A) and Reason (R) type questions. Two statements
are given one labelled Assertion (A) and the other labelled Reason (R). Select the
correct answer from the codes (a), (b), (c) and (d) as given below.
a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct
explanation of the Assertion (A).
b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct
explanation of the Assertion (A).
c) Assertion (A) is true, but Reason (R) is false.
d) Assertion (A) is false and Reason (R) is also false.
9. Assertion A: The conductivity of intrinsic semiconductors increases with an increase
in temperature.
Reason R: Increase in temperature decreases the average time between collisions of
electrons.
10. Assertion A: Putting p-type semiconductor slab directly in physical contact with n-
type semiconductor slab cannot form p-n junction.
Reason R: The roughness at contact will be much more than interatomic crystal
spacing and continuous flow of charge carriers is not possible.
WORKSHEET 02
11. In the following diagram, which bulb of B1 and B2 will glow and why ?

12. Why does the width of depletion layer of a p-n junction increase in reverse biasing?
13. If a small voltage is applied to a p-n junction diode how will the width of depletion layer
be aYected when it is (i) forward biased, and (ii) reverse biased? Briefly explain.
14. What are donor and acceptor energy levels?
15. A p-type semiconductor is electrically neutral although it has holes as the majority
carriers. Justify.
16. With the help of suitable diagram, describe briefly the two important processes involved
in the formation of a p-n junction. Define the terms depletion region and potential
barrier.
17. For the circuit shown, find the current flowing through the 1 Ω resistor. Assume that the
two diodes are ideal diodes.

18. An a.c. signal is fed into two circuits X and Y and the corresponding output in the two
cases have the waveforms as shown. Name the circuits X and Y. Also, draw their
detailed circuit diagrams.

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