CONTINUOUS INTERNAL ASSESMENT - II

First semester

21 EC 202 ELECTRONIC DEVICES

EE VLSI
Time: 1 hour 30 minutes Maximum: 50 Marks

Part A (12*0.5=6 Marks) (Answer all the Questions)

1. What is the need for keeping the base thinner in a transistor? To reduce recombination and there by the base current
2. What constitutes the base current in a transistor? The current supplied by the external source for the loss of carriers due to recombination
3. Which of the 3 currents in a transistor is the highest? Emitter Current
4. What is the relation between α and β? α =β/(1+ β)
5. The base current in a CB configuration ________ with increase in V CB. Decreases
6. The DC load line is the line joining 2 points in the output characteristics of a CE configuration of a transistor. Which are the 2 points?
(Vcc,0) and (0, Vcc/RL )
7. Which of the following diodes works on the principle of tunneling. Tunnel diode
A) PN junction diode B) Tunnel diode C) Photo diode D) Varactor diode
8. What causes punch through in a transistor? Early effect-Punch-through in a transistor occurs when the depletion regions of the collector-base junction occupies
the full base width.
9. FET is a current controlled device. false
10. In a CB configuration, the DC current gain is 0.967. If the emitter current is 10mA, what is the value of collector current?.9.67 mA
11. From the input characteristics of CB configuration, for a given value of VEB, IE increases for increasing VCB.
12. What is the stability factor S for a fixed bias circuit? 1+ β
 Part B (3*2=6 Marks) (Answer all the Questions)

1. Write the expressions for IC in CB and CE configuration. Ic= α. IE and Ic= β. IB

2. What is Q point in a transistor amplifier? Quiescent point or operating point- refers to the static value of output current, input current and V CE
3. What is the advantage of FET over BJT?
Less thermal noise due to unipolar device, high input impedance.

Part C (2*14=28 Marks) (Answer any Two)

4. Draw the circuit showing common emitter configuration of a transistor. Draw the input and output characteristics and explain.

5. i. Explain the working of a JFET, analyse its VI characteristics with diagram.

 ii. Write the applications of CCD.

6. i.Draw and explain the eber-Moll model of a NPN transistor

 ii. In a CB configuration, the emitter current is 6.28 mA and collector current is 6.2 mA. What is the value of dc current gain? Calculate the
values of β and γ α = 0.99, β=99, γ=100

Part D (1*10=10 Marks)

7. i. What is the need for bias stability? How do you define bias stability factor?
Bias stability in transistors is crucial for several reasons:
Consistent Performance: Bias stability ensures that the transistor operates consistently over time, maintaining its performan ce characteristics such as gain,
frequency response, and linearity.
Temperature Variations: Transistors are sensitive to temperature changes. Bias stability helps to mitigate the effects of tem perature variations, preventing
shifts in operating points that could lead to distortion or malfunction.

Component Variations: Manufacturing variations can cause differences in transistor parameters. Bias stability helps to minimi ze the impact of these
variations, ensuring that the circuit functions correctly even with component tolerances.
Preventing Thermal Runaway: Thermal runaway is a condition where an increase in temperature causes an increase in current, which further increases the
temperature, leading to potential damage. Bias stability helps to prevent this by maintaining a stable operating point.
 Long-Term Reliability: Stable biasing extends the lifespan of the transistor and the overall circuit by preventing excessive stress on the components.
In summary, bias stability is essential for reliable and consistent operation of transistor -based circuits, ensuring they perform as intended under various
conditions.

The variation in Ic with respect to Icbo, VBE and beta

ii. Explain the circuit of a Collector to base biased CE amplifier. Comment on bias stability of this circuit.

When the collector IC is tending to increases, VCE decreases due to large voltage drop across RC

IB = (VCE –VBE)/RB, Hence base current IB is reduced.

The reduced base current IB in turn reduces the original increase in collector current IC. Thus circuit has mechanism to stabilize collector current

IC automatically.

8. Explain the working of GUNN diode and IMPATT diode with necessary diagrams
Gunn diodes are also known as transferred electron devices(TED) are widely used in microwave RF applications for frequencies between 1 and 100 GHz.
Gallium Arsenide Gunn Diodes are made for frequencies up to 200GHz whereas Gallium Nitride can reach upto 3THz.
The Gunn diode is most commonly used for generating microwave RF signals - these circuits may also be called a transferred electron oscillator or TEO.
The Gunn diode may also be used for an amplifier in a transferred electron amplifier or TEA.
As Gunn diodes are easy to use, they form a relatively low cost method for generating microwave RF signals. GUNN diode, named after the scientist who
discovered GUNN effect in 1962, is a special diode which works on the principle of bulk properties of the material. The device exhibits negative resistance.
Understand that a Positive resistance will absorb or dissipate power, which means that the all the power is absorbed by the device. On the other hand, negative
resistance will generate power. This negative resistance devices are used for generating power. Tunnel diode is a microwave power generator, you should
remember the negative resistance of tunnel diode. Similarly, GUNN diode is also a microwave power generator. These diodes are used in microwave
appliances.
Materials which have the Gunn Effect, such as GaAs, InP, GaN, must be direct bandgap materials that
have more than one valley in the conduction band, the effective mass & the density of states in the upper valley(s) must be higher than in the main
valley. ( Direct band gap refers to the condition: highest level of valence band is coinciding with lowest level of conduction band.)
The band diagram we have seen so far under the assumption of a constant k value, where k is the momentum of the electron. To understand GUNN effect, you
must understand the energy band diagram of a material with k as the x co-ordinate. There we find valleys in the energy bands. I have attached the figures. As
the k value varies, the momentum of the electron in the system varies, which in turn defines the effective mass and density of states.

Thus, when we apply voltage across a direct band gap material, electrons jump from valence band to the lowest valley available. Further if we increase the
electric field ie, voltage, these electrons will jump from lower valley to higher valley, which corresponds to higher effective mass & the density of states in the
upper valley(s) than in the main valley.
Most important point, the mobility at higher valley will be lesser and the material will exhibit a reduced current for increased voltage. This situation is negative
resistance.

Gunn diode is made of three layers of N-type material.

The two layers at the extremes are heavily doped while the middle thin layer is lightly doped known as the buffer layer.
Generally, the middle thin layer is epitaxially grown on the N+ substrate. While the topmost layer N+ layer is formed by the ion implantation technique.
Metallic or ohmic contacts are provided at their ends for biasing. Furthermore, a heatsink is connected to prevent overheating.

IMPATT diode:
•IMPact ionization Avalanche and Transit Time diode
•A device which exhibits negative resistance- which is exhibited for DC and AC
•Concept:
–Reverse
biased P+N junction, delay in Avalanche breakdown ( When AC is applied to bias
the junction, the increased current due to Avalanche happens after a delay of
90 degrees).
–In addition, a drift region is introduced to delay the change in current by
another 90 degrees
–Thus, the effect of increased AC will be effective only after 180 degrees, which is
negative resistance.
The reverse biased junction initiates Avalanche and the carriers generated are drifted through the drift region. Thus ,a delay in the transfer of carriers to the
external circuit, results in negative resistance.