KMS-103F FET CHARACTERISTICS TRAINER

.....a total solution for

Educational Lab Trainers

FET CHARACTERISTICS
TRAINER

KMS-103F

B-4,Lotus C.H.S., Near P&MC. Bank, Plot No. 8,

Sector-7, Airoli, Navi Mumbai - 400 708.
Tel.: 022-65116548 / Telefax : 27694323
Email: [email protected]
W e bs i te : www. k i t e k t e c h n o l o g i e s . com

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KMS-103F FET CHARACTERISTICS TRAINER

LIST OF CONTENTS

1. SPECIFICATION……………………………………………………………………..………..01

2. BLOCK DESCRIPTION ……………………………………………………………………...02

3. HARDWARE DESCRIPTION ……………….…………………………..……………...…...03

4. EXPERIMENTS……………………………………………………………..……………..04-07

EXP. 1: TO STUDY THE CHARACTERISTIC OF FET ……………………….………….……04-07

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KMS-103F FET CHARACTERISTICS TRAINER

SPECIFICATION

KMS-103F FET CHARACTERISTICS TRAINER

 On-board features

- Resistance Block consisting of One Resistance of 1K and One Potentiometer

of 100K.

 Display

- One LED indicator to indicate Power input.

 On-board Semiconductor Device

- FET (Field Effect Transistor)

 On-board Digital Panel Meter (DPM)

- 200mA & 2mA switch selectable DPM for current measurement - 1 no.
- 2V & 200V switch selectable DPM for voltage measurement - 1 no.

 Power Supply

- Variable DC power supply : 0 to + 15 V/150mA

- Variable DC power supply : 0 to + 30 V/150mA

 Interconnections

- All interconnections are made using 2mm banana Patch cords.

 Bare board Tested Glass Epoxy PCB is used.

 Attractive ABS Plastic enclosures.
 Set of 2mm Patch cords for interconnections
 User’s Manual

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KMS-103F FET CHARACTERISTICS TRAINER

BLOCK DESCRIPTION

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KMS-103F FET CHARACTERISTICS TRAINER

HARDWARE DESCRIPTION

FET CHARACTERISTICS Trainer KMS – 103F are divided into different BLOCKS for the benefit of
user. The different blocks are as explained below.

This unit introduces you to various Semiconductor Devices. PCB is covered by an overly PCB, on
which symbolic representation of all the hardware of PCB is printed for easy experimental work.

This unit is provided onboard various semiconductors as mentioned below. KMS -103F has below
mentioned Semiconductor Configurations.

1) FET Configuration

This unit deals with following experiments on FET

a) Characteristic of FET.

RESISTANCE BLOCK SECTION:

In this section, the trainer is provided a Resistance Block consisting of One Resistance of 1K and One
Potentiometer P1 of 100K. The Potentiometer helps in varying the load. Its terminals are T1 and T2.

DIGITAL PANEL METER (DPM) SECTION:

In this section, the trainer is provided with on-board DPM as described below
1. Current DPM (marked as DPM-1) with selector Switch SW1 (Range 200mA / 2mA). Its terminals
are A(+) and A(-) - 1 No.
2. Voltage DPM (marked as DPM-3) with selector switch SW2 (Range 2V / 200V). Its terminals are
V(+) and V(-) - 1 No.

POWER SUPPLY SECTION:

In this section, the trainer is provided with two variable DC Supply, one 0 to 15V and other 0 to
30V. Potentiometer P2 & P3 are provided to vary the DC Outputs which are available on Banana
Terminals 0-15V and 0-30V respectively.

However you may still need few items from your laboratory stock. One can use either multimeters or a
combination of Ammeter and Voltmeter that is available in your laboratory.

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KMS-103F FET CHARACTERISTICS TRAINER

EXPERIMENT- 1: TO STUDY THE CHARACTERISTIC OF FET

AIM:
1. To observe the effect of Drain to source voltage Vds on Drain current Id.
2. To observe the effect of reverse Gate to source voltage Vgs on Drain current Id.
3. To plot drain characteristic (Vgs versus Id) & transfer characteristic (Vgs versus Id

CONCEPT:

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behavior
of the device. FETs are also known as unipolar transistors since they involve single-carrier-type
operation. Many different implementations of field effect transistors exist. Field effect transistors
generally display very high input impedance at low frequencies. The conductivity between the drain and
source terminals is controlled by an electric field in the device, which is generated by the voltage
difference between the body and the gate of the device.

A field-effect transistor (FET) is a type of transistor commonly used for weak-signal amplification (for
example, for amplifying wireless signals). The device can amplify analog or digital signals. It can also
switch DC or function as an oscillator.
In the FET, current flows along a semiconductor path called the channel. At one end of the channel,
there is an electrode called the source. At the other end of the channel, there is an electrode called
the drain. The physical diameter of the channel is fixed, but its effective electrical diameter can be
varied by the application of a voltage to a control electrode called the gate. The conductivity of the FET
depends, at any given instant in time, on the electrical diameter of the channel. A small change in gate
voltage can cause a large variation in the current from the source to the drain. This is how the FET
amplifies signals.
Field-effect transistors exist in two major classifications. These are known as the junction FET
(JFET) and the metal-oxide- semiconductor FET (MOSFET).
The junction FET has a channel consisting of N-type semiconductor (N-channel) or P-type
semiconductor (P-channel) material; the gate is made of the opposite semiconductor type. In P-type
material, electric charges are carried mainly in the form of electron deficiencies called holes. In N-type
material, the charge carriers are primarily electrons. In a JFET, the junction is the boundary between
the channel and the gate. Normally, this P-N junction is reverse-biased (a DC voltage is applied to it) so
that no current flows between the channel and the gate. However, under some conditions there is a
small current through the junction during part of the input signal cycle.
In the MOSFET, the channel can be either N-type or P-type semiconductor. The gate electrode is a
piece of metal whose surface is oxidized. The oxide layer electrically insulates the gate from the
channel. For this reason, the MOSFET was originally called the insulated-gate FET (IGFET), but this
term is now rarely used. Because the oxide layer acts as a dielectric, there is essentially never any
current between the gate and the channel during any part of the signal cycle. This gives the MOSFET
an extremely large input impedance. Because the oxide layer is extremely thin, the MOSFET is
susceptible to destruction by electrostatic charges. Special precautions are necessary when handling or
transporting MOS devices.
The FET has some advantages and some disadvantages relative to the bipolar transistor. Field-effect
transistors are preferred for weak-signal work, for example in wireless communications and broadcast
receivers. They are also preferred in circuits and systems requiring high impedance. The FET is not, in

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KMS-103F FET CHARACTERISTICS TRAINER

general, used for high-power amplification, such as is required in large wireless communications and
broadcast transmitters.
Field-effect transistors are fabricated onto silicon integrated circuit (IC) chips. A single IC can contain
many thousands of FETs, along with other components such as resistors, capacitors, and diodes.

SYMBOL:

Fig-1.1

PROCEDURE:

1. Connect the AC Supply to the Kit.

2. Connect ‘0-15V’ of 0 TO +15V DC Supply to T1 of resistance block and GND to T23. Keep pot
P1 to minimum position.
3. Connect T2 to T29.
4. Connect ‘0-30V’ of 0 TO +30V DC Supply to T28 and GND to T32.
5. Connect T27 to A (+) & T26 to A (-) of DPM-1. Set the Switch SW1 towards 200 mA. This is ID.
6. Connect T25 to V (+) & T31 to V (-) of DPM-3. Set the Switch SW2 towards 200V. This is VDS.
7. Set a Multimeter in Voltmeter mode, select 20V and connect (+) to T24 & (-) to T30. This is VGS.
8. Adjust potentiometer P1 to minimum resistance position. Keep the voltage control pots P2 & P3
of power supply to minimum position.
9. Switch ON the power supply of the trainer.
10. Read the DPM-1 & DPM-3 reading carefully. Voltmeter on gate side will indicate the voltage
VGS & on drain side will indicate voltage VDS on DPM-3. Ammeter connected in Drain side
indicates Drain current ID on DPM-1.
11. Adjust the Gate voltage VGS = 0 with the help of Pot P2.
12. Now increase the Drain voltage VDS in steps with the help of pot P3 as shown in the Table-1.1
& record the corresponding drain current.
13. Repeat the procedure for VGS = -0.5V, -1V, -1.5V, -2V
14. Plot the graph for VDS versus ID

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KMS-103F FET CHARACTERISTICS TRAINER

OBSERVATION TABLE:

VDS volts VGS = 0V VGS = - 0.5V VGS= - 1.0V VGS = - 1.5V VGS = - 2.0V
ID mA ID mA ID mA ID mA ID mA

10

15

Table-1.1

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KMS-103F FET CHARACTERISTICS TRAINER

TRANSFER CHARACTERISTIC

15. Use same setup & connection for transfer characteristic.

16. Set the Drain voltage VDS = 5V with the help of pot P3 & increase –ve Gate Source voltage VGS
from zero with the help of Pot P2, as shown in Table-1.2.
17. Record the Drain current ID correspondingly. Increase the –ve gate source voltage Vgs till drain
current decreases to zero.
18. Repeat the procedure for Drain voltage VDS = 6V & 7V.
19. Plot the graph for VGS versus ID.
20. Mark the key points on both the curves & name all.

VGS volts VDS = 5V VDS = 6V VDS = 7V

ID mA ID mA ID mA

0
- 0.5
- 1.0
- 1.5
- 2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0

Table-1.2

CONCLUSION:

 FET is a voltage controlled device i.e. drain current depends on the value of –ve Gate source
voltage VGS and Drain Source voltage VDS

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