LASC ECE102

Prac ce set
MCQ (Mul ple Choice Ques ons) – Theory (20 Ques ons) 20*1=20

1. What is the primary reason semiconductors are used in electronics?

a) They have high conduc vity
b) They allow controlled electron flow
c) They have zero bandgap
d) They behave like insulators at all temperatures

2. Which of the following is an example of an elemental semiconductor?

a) GaAs
b) InP
c) Si
d) CdSe

3. What defines a direct bandgap semiconductor?

a) Electrons and holes recombine without a phonon
b) Requires an external voltage to conduct
c) Energy gap between valence and conduc on bands is zero
d) Has a high atomic packing factor

4. What happens to the conduc vity of a semiconductor when temperature

increases?
a) Decreases
b) Increases
c) Remains constant
d) Turns into an insulator

5. Which of the following is not a compound semiconductor?

a) GaAs
b) Si
c) InP
d) CdSe

6. The bandgap energy of silicon at room temperature is approximately:

a) 0.7 eV
b) 1.1 eV
c) 1.4 eV
d) 2.3 eV

7. In an indirect bandgap semiconductor, an electron transi on requires:

a) Only an energy change
 b) A phonon to conserve momentum
c) High temperatures to occur
d) No external energy

8. The probability of an electron occupying a state in a semiconductor is given by:

a) Boltzmann’s Law
b) Schrödinger’s Equa on
c) Fermi-Dirac Distribu on
d) Newton’s Law

9. Which of the following best describes an organic semiconductor?

a) Based on silicon and germanium
b) Uses carbon-based materials
c) Only conducts electricity at high temperatures
d) Requires a metal doping agent

10. The Fermi energy level is the energy level at which:

a) All electrons reside
b) The probability of occupa on is 50% at T ≠ 0K
c) No electron is present
d) Only phonons can exist

11. Which material has the highest atomic packing factor (APF)?
a) Simple Cubic (SC)
b) Body-Centered Cubic (BCC)
c) Face-Centered Cubic (FCC)
d) Diamond La ce

12. What is the main reason GaAs is used in high-speed devices?

a) Low bandgap energy
b) High electron mobility
c) High atomic mass
d) Low power consump on

13. Which factor does NOT influence the bandgap of a semiconductor?

a) Temperature
b) Crystal Structure
c) Electron Spin
d) Atomic Composi on

14. Which material is commonly used in LEDs?

a) Si
b) Ge
 c) GaAs
d) CdSe

15. What does the slope of an E-k diagram represent?

a) Bandgap Energy
b) Effec ve Mass
c) Probability of Occupa on
d) Work Func on

16. A higher effec ve mass in a semiconductor means:

a) Lower mobility
b) Higher conduc vity
c) Smaller bandgap
d) More free electrons

17. What is the significance of the dispersion rela on E = h²k² / 2m?

a) Defines the energy levels of free electrons
b) Determines the charge carrier density
c) Gives the probability of an electron being at a given energy
d) Determines the op cal proper es of the material

18. Which process increases the conduc vity of a semiconductor?

a) Increasing temperature
b) Applying reverse bias
c) Reducing carrier concentra on
d) Lowering Fermi level

19. What is the func on of a phonon in semiconductors?

a) Absorbing photons
b) Transferring momentum in indirect transi ons
c) Producing free charge carriers
d) Enhancing conduc vity

20. Which parameter primarily determines if a material is a conductor, semiconductor,

or insulator?
a) Effec ve mass
b) Carrier concentra on
c) Bandgap energy
d) Atomic weight
Theore cal Ques ons (10 Ques ons) 10*2=20

1. Define a semiconductor. Why is it essen al in electronic circuits?

2. Explain the difference between a direct and indirect bandgap semiconductor with
examples.

3. What is a bandgap, and how does it influence semiconductor behavior?

4. How does the Fermi energy level affect electron occupa on in a semiconductor?

5. Compare inorganic and organic semiconductors with suitable examples.

6. Explain the Atomic Packing Factor (APF) for different crystal la ces.

7. Discuss how temperature affects the electrical conduc vity of a semiconductor.

8. Explain the E-k diagram and its importance in determining effec ve mass.

9. Describe the Schrödinger Equa on applica on in semiconductor physics.

10. What is the significance of the dispersion rela on for a free electron in a solid

Numerical MCQs (20 Ques ons) 20*3=100

1. An electron is confined in a 10 Å wide poten al well. Calculate its first energy level.
a) 0.1 eV
b) 0.4 eV
c) 1.2 eV
d) 2.0 eV

2. A semiconductor has a bandgap of 1.1 eV. What is the minimum photon energy
required to excite an electron?
a) 0.5 eV
b) 1.1 eV
c) 1.5 eV
d) 2.2 eV

3. Find the probability of an energy level 2kT above the Fermi energy being occupied
at 300K.
a) 0.01
b) 0.12
c) 0.50
d) 0.88
4. Determine the probability that an electron occupies a state at 0.05 eV above the
Fermi level at 300K.
a) 0.26
b) 0.73
c) 0.50
d) 0.98

5. If an electron moves from the third to the second energy level in an infinite
poten al well, what is the emi ed photon’s wavelength?
a) 10 nm
b) 50 nm
c) 100 nm
d) 200 nm

6. A semiconductor has a conduc on band edge 0.25 eV above the Fermi level. What
is the probability of occupa on at 300K?
a) 0.01
b) 0.12
c) 0.50
d) 0.88

7. A photon of 2.5 eV energy strikes a semiconductor with a bandgap of 1.8 eV. What
happens?
a) Electron is excited
b) No excita on
c) Electron moves to lower energy
d) Photon is absorbed without effect

8. Calculate the atomic packing factor (APF) for an FCC la ce.

a) 0.52
b) 0.68
c) 0.74
d) 0.92

9. A material has a bandgap of 2.0 eV. Find the longest wavelength of light it can
absorb.
a) 310 nm
b) 620 nm
c) 1240 nm
d) 2480 nm

10. If the bandgap of GaAs is 1.43 eV, what is the approximate wavelength of light
emi ed from a GaAs LED?
a) 870 nm
 b) 1240 nm
c) 620 nm
d) 310 nm

11. If the effec ve mass of an electron is 0.5 mes the free electron mass, what
happens to mobility?
a) Increases
b) Decreases
c) No effect
d) Becomes infinite

12. An electron is trapped in a poten al well of width 5 Å. Find the energy difference
between the first and second energy levels.
a) 0.1 eV
b) 0.4 eV
c) 1.2 eV
d) 2.0 eV

13. A semiconductor has an electron mobility of 1500 cm²/Vs. What is the dri velocity
under a 10 V/cm electric field?
a) 1.5 × 10³ cm/s
b) 1.5 × 10⁴ cm/s
c) 1.5 × 10⁵ cm/s
d) 1.5 × 10⁶ cm/s

14. An electron has an effec ve mass of 0.067 mes the free electron mass in GaAs.
How does this affect its speed in a given electric field?
a) It moves faster than in silicon
b) It moves slower than in silicon
c) Speed is the same as in silicon
d) Speed is independent of effec ve mass

15. A material has an electron mobility of 0.15 m²/Vs and a hole mobility of 0.05 m²/Vs.
Find the conduc vity if the carrier concentra on is 10¹⁶ cm⁻³.
a) 0.16 S/m
b) 0.24 S/m
c) 0.32 S/m
d) 0.40 S/m

16. A semiconductor at 300K has an intrinsic carrier concentra on of 1.5 × 10¹⁰ cm⁻³. If
the bandgap increases, what happens to the carrier concentra on?
a) Increases
b) Decreases
 c) Remains constant
d) First increases, then decreases

17. If the Fermi level in an intrinsic semiconductor is exactly at the middle of the
bandgap, what is the expected intrinsic carrier concentra on at 300K?
a) 10¹⁰ cm⁻³
b) 10¹² cm⁻³
c) 10¹⁴ cm⁻³
d) 10¹⁶ cm⁻³

18. A material has a density of states propor onal to the square root of energy. How
does the carrier concentra on change with temperature?
a) Propor onal to T¹/²
b) Propor onal to T³/²
c) Propor onal to T²
d) Propor onal to T³

19. An electron in a semiconductor has an energy of 1.2 eV above the conduc on band
edge. What is its probability of occupa on at 300K?
a) 0.001
b) 0.01
c) 0.1
d) 0.5

20. The mobility of holes in a material is 500 cm²/Vs, while the electron mobility is
1500 cm²/Vs. If the applied electric field is 10 V/cm, what is the dri velocity of
holes?
a) 5 × 10³ cm/s
b) 5 × 10⁴ cm/s
c) 5 × 10⁵ cm/s
d) 5 × 10⁶ cm/s

Numerical MCQs – Wave Func on (10 Ques ons) 10*2=20

1. The wave func on of a quantum par cle is given as Ψ(x) = A sin(nπx/L). What
condi on must A sa sfy for the wave func on to be valid?
a) A can be any constant
b) A must be zero
c) A must be chosen so that the total probability is 1
d) A must be equal to π

2. For a normalized wave func on Ψ(x), what is the probability of finding the par cle
at an exact posi on x?
a) 1
 b) 0
c) Depends on the energy level
d) Equal to Ψ(x) itself

3. If the wave func on Ψ(x) of a par cle in a box is squared, what does the resul ng
func on |Ψ(x)|² represent?
a) The total energy of the system
b) The velocity of the par cle
c) The probability density of the par cle’s loca on
d) The force ac ng on the par cle

4. A wave func on Ψ(x) is given for a quantum par cle. What does the integral of
|Ψ(x)|² over all space represent?
a) Energy of the par cle
b) Total probability (which must be 1)
c) Momentum of the par cle
d) Velocity of the par cle

5. A wave func on Ψ(x) = A sin(nπx/L) is given for a par cle in a box. What is the
normaliza on constant A for n=1 in the range 0 ≤ x ≤ L?
a) √2/L
b) 2/L
c) π/L
d) 1/L

6. If the wave func on of a par cle in a box is Ψ(x) = A sin(2πx/L), at which posi on(s)
inside the box is the probability of finding the par cle zero?
a) x = 0 and x = L
b) x = L/4
c) x = L/2
d) x = 3L/4

7. Consider the wave func on Ψ(x) = A sin(nπx/L) for a par cle in a box. What is the
probability of finding the par cle between 0 and L/4 in the ground state (n=1)?
a) 25%
b) 50%
c) 75%
d) 100%

8. A quantum par cle has a wave func on Ψ(x) = A sin(nπx/L). What happens to the
number of nodes (zero crossings) when n increases?
a) Increases
b) Decreases
 c) Remains the same
d) Becomes zero

9. If the width of the poten al well is doubled, how does the normaliza on constant
A change for a wave func on Ψ(x)?
a) Doubles
b) Becomes half
c) Remains the same
d) Increases exponen ally

10. A par cle in a box has a wave func on Ψ(x) that sa sfies boundary condi ons.
Which of the following must be true for Ψ(x)?
a) Ψ(x) is infinite at boundaries
b) Ψ(x) must be zero at boundaries
c) Ψ(x) must be maximum at x = 0
d) Ψ(x) is always a constant
 Answers
MCQ (Mul ple Choice Ques ons) – Theory

1. b) They allow controlled electron flow

2. c) Si

3. a) Electrons and holes recombine without a phonon

4. b) Increases

5. b) Si

6. b) 1.1 eV

7. b) A phonon to conserve momentum

8. c) Fermi-Dirac Distribu on

9. b) Uses carbon-based materials

10. b) The probability of occupa on is 50% at T ≠ 0K

11. c) Face-Centered Cubic (FCC)

12. b) High electron mobility

13. c) Electron Spin

14. c) GaAs

15. b) Effec ve Mass

16. a) Lower mobility

17. a) Defines the energy levels of free electrons

18. a) Increasing temperature

19. b) Transferring momentum in indirect transi ons

20. c) Bandgap energy

Numerical MCQs

1. b) 0.4 eV

2. b) 1.1 eV

3. b) 0.12

4. a) 0.26
 5. c) 100 nm

6. b) 0.12

7. a) Electron is excited

8. c) 0.74

9. c) 1240 nm

10. a) 870 nm

11. b) Decreases

12. b) 0.4 eV

13. c) 1.5 × 10⁵ cm/s

14. a) It moves faster than in silicon

15. b) 0.24 S/m

16. b) Decreases

17. a) 10¹⁰ cm⁻³

18. b) Propor onal to T³/²

19. b) 0.01

20. b) 5 × 10⁴ cm/s

Numerical MCQs – Wave Func on

1. c) A must be chosen so that the total probability is 1

2. b) 0

3. c) The probability density of the par cle’s loca on

4. b) Total probability (which must be 1)

5. a) √2/L

6. a) x = 0 and x = L

7. b) 50%

8. a) Increases

9. b) Becomes half

10. b) Ψ(x) must be zero at boundaries