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2sc4664

The document provides a product specification for the Silicon NPN Power Transistor 2SC4664, detailing its ITO-220 package, pin configuration, and absolute maximum ratings. It includes thermal characteristics and various electrical parameters such as collector-emitter voltage and current gain. Additionally, it features package outline dimensions for the transistor.

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5 views3 pages

2sc4664

The document provides a product specification for the Silicon NPN Power Transistor 2SC4664, detailing its ITO-220 package, pin configuration, and absolute maximum ratings. It includes thermal characteristics and various electrical parameters such as collector-emitter voltage and current gain. Additionally, it features package outline dimensions for the transistor.

Uploaded by

lanzdaniellanz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Product Specification www.jmnic.

com

Silicon NPN Power Transistors 2SC4664

DESCRIPTION
With ITO-220 package
Switching power transistor

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Fig.1 simplified outline (ITO-220) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 250 V

VCEO Collector-emitter voltage Open base 200 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 8 A

ICM Collector current-Peak 16 A

IB Base current 3 A

IBM Base current-Peak 6 A

PT Total power dissipation TC=25 30 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Rth j-C Thermal resistance junction case 4.17 /W

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SC4664

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 200 V

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V

VBEsat Emitter-base saturation voltage IC=4A; IB=0.8A 1.5 V

ICBO 0.1 mA
Collector cut-off current At rated volatge
ICEO 0.1 mA

IEBO Emitter cut-off current At rated volatge 0.1 mA

hFE-1 DC current gain IC=4A ; VCE=2V 10 25

hFE-2 DC current gain IC=1mA ; VCE=2V 10

fT Transition frequency IC=0.8A ; VCE=10V 13 MHz

ton Turn-on time 0.3 s


IC=4A;IB1=0.8A
ts Storage time IB2=1.6A ,RL=37.5 1.0 s
VBB2=4V
tf Fall time 0.1 s

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SC4664

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: 0.20 mm)

JMnic

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