Printed Pages:2 Sub Code:KEC-301

Paper Id: 233650 Roll No.

B. TECH
(SEM III) THEORY EXAMINATION 2022-23
ELECTRONIC DEVICES
Time: 3 Hours Total Marks: 100
Note: Attempt all Sections. If require any missing data, then choose suitably.

SECTION A

1. Attempt all questions in brief. 2 x 10 = 20

(a) Classify the materials on the basis of energy band gap theory.
(b) State the de Broglie principle of duality
(c) Define sheet resistance.
(d) Differentiate between drift and diffusion current.
(e) Draw the I-V characteristics of pn junction diode.
(f) Define the depletion region in a pn junction.
(g) Draw the input and output characteristics of BJT in CE configuration

2
(h) Determine the current gain β in CE configuration of BJT, if =0.98.
90

13
(i) Draw the small signal model of NMOS transistor.
_2

2.
(j) Explain the photovoltaic effect.
P2

24
5.
3D

SECTION B

.5
P2

2. Attempt any three of the following: 10x3=30

17
Q

|1
(a) What do you mean by effective mass of electron? Derive the relation between
6

effective mass and curvature of energy band.

:4

(b) A Si sample is doped with 1017arsenic (AS) atoms / cm3. Calculate the equilibrium
28

concentration of electrons and holes at 300K. What is the position of fermi level
:

(EF) relative to intrinsic energy level (Ei)? Also draw the energy band diagram
13

showing the position of fermi level and intrinsic energy level. Given that intrinsic
carrier concentration (ni)for Si is 1.5×1010 / cm3
3
02

(c) Using the concept of drift and diffusion of carriers, derive the continuity equation.
-2

(d) Explain Zener and Avalanche breakdown in detail.

04

(e) Write short note on following-

(i) LED
1-

(ii) Solar cell

|0

SECTION C
3. Attempt any one part of the following: 10x1=10

(a) Derive the time dependent and time independent Schrodinger wave equation.
(b) Differentiate between direct and indirect band gap semiconductors. Also discuss the
variation of energy band with alloy composition.

QP23DP2_290 | 01-04-2023 13:28:46 | 117.55.242.132

4. Attempt any one part of the following: 10x1=10

(a) Define Fermi-Dirac distribution function. Discuss the temperature dependence of

Fermi-Dirac distribution function for semiconductor material
(b) Derive the Einstein’s relation for electron.

5. Attempt any one part of the following: 10x1=10

(a) Derive the expression of depletion width in a p-n junction.

(b) Consider a Si abrupt p-n junction at 300K with Na = 1018 / cm3 and Nd = 1015 / cm3.
Determine the value of contact potential and width of depletion region. Given that
intrinsic carrier concentration (ni)for Si is 1.5×1010 / cm3 and dielectric constant (K)
for Si is 11.8.

6. Attempt any one part of the following: 10x1=10

2
90
(a) Discuss Schottky diode in detail and write its application.

13
_2

(b) Draw and illustrate the Ebers-Moll model of BJT.

2.
P2

24
7. Attempt any one part of the following: 10x1=10

5.
3D

.5
P2

17
(a) Explain the accumulation mode, depletion mode and inversion mode with energy
Q

band diagram for a MOS capacitor.

|1
(b) Explain the construction and working of N channel Enhancement type MOSFET and
6

draw its drain characteristics and transfer characteristics.

:4
: 28
13
3
02
-2
04
1-
|0

QP23DP2_290 | 01-04-2023 13:28:46 | 117.55.242.132

 Printed Page: 1 of 1
Subject Code: BEC301
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM III) THEORY EXAMINATION 2023-24
ELECTRONIC DEVICES
TIME: 3HRS M.MARKS: 70

Note: Attempt all Sections. If require any missing data, then choose suitably.
SECTION A

1. Attempt all questions in brief.

Q no. Question Marks
a. Discuss thermal Equilibrium Condition. 2
b. Illustrate the energy band diagram for PN junction in reverse mode. 2
c. A transistor has an α of 0.98. Determine the value of β. 2
d. Illustrate Electroluminescence. 2
e. State the de Broglie principle of duality. 2
f. Write properties of MOS capacitor. 2
g. Differentiate between drift and diffusion current. 2
SECTION B

2. Attempt any three of the following:

a. Explain photoelectric effect. justify how this effect verifies the particle nature of light. 7
90

2
b. Illustrate Intrinsic and Extrinsic Semiconductor in detail. 7

13
c. Explain the small signal model of PN-Junction Diode 7
_2

2.
d. Describe stability factor and explain how it affect the transistor biasing. 7
P2

24
e. Explain the C-V Characteristic of MOS Transistor. 7
4D

5.
SECTION C

.5
P2

3. Attempt any one part of the following:

17
a. Discuss Application of Schrödinger wave equation for infinite Potential well and 7
Q

|1

discuss the effect of various in relation to the energy of the particle.

b. Illustrate the concept of allowed and forbidden energy bands in a single crystal both 7
4

qualitatively and more rigorously from the results of using the Kronig–Penney model.
2

4. Attempt any one part of the following:

9:
:2

a. Define the term Doping. Explain the effect of Impurity on energy band gap Diagram 7
in detail.
13

b. Using the concept of drift and diffusion of carriers, derive the continuity equation. 7
4

5. Attempt any one part of the following:

02

a. Describe the importance of Einstein relation and prove the relation. 7

-2

b. Derive the relation of voltage and current for PN junction diode. 7

03

6. Attempt any one part of the following:

1-

a. Explain Ebers-Moll model for PNP transistor. 7

|2

b. Name the different biasing schemes used transistor biasing. Explain voltage divider 7
biasing in detail.
7. Attempt any one part of the following:
a. Explain various biasing schemes for JFET. 7
b. Explain Enhancement P channel MOSFET in detail. Draw and elaborate the drain 7
Characteristic

1|Page
QP24DP2_290 | 21-03-2024 13:29:24 | 117.55.242.132
 Printed Page: 1 of 1
Subject Code: KEC301
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM III) THEORY EXAMINATION 2021-22
ELECTRONIC DEVICES

Time: 3 Hours Total Marks: 100

Note: 1. Attempt all Sections. If require any missing data; then choose suitably.
SECTION A
1. Attempt all questions in brief. 2 x 10 = 20
Q no. Question Marks CO
a. What is meant by tunneling? 2 1
b. Define Quantum efficiency in LED. 2 1
c. Differentiate between Diffusion and Drift. 2 2
d. Define the relation between resistance and current. 2 2
e. Write Poisson and continuity equation. 2 3
f. What is meant by “Early Effect”? 2 3
g. Differentiate between JFET and MESFECT. 2 4
h. Draw the circuit diagram of Bipolar Junction transistor. 2 4
i. Write properties of MOS Capacitor. 2 5
j. Draw the circuit diagram of LED. 2 5
SECTION B
2. Attempt any three of the following: 3 x 10 = 30
Q no. Question Marks CO
a. Define Semiconductor. Explain different kind of semiconductor devices with 10 1
proper diagram.
b. How the doping effect the performance of semiconductors with example? 10 2
c. Enumerate the Switching characteristics of the PN diode with suitable circuit and 10 3
waveforms. Write the break down condition of PN diode.
d. Draw a circuit diagram to determine the CB characteristics of an NPN transistor. 10 4
Also explain the input and output characteristics.
e. Describe the Output and transfer characteristics of MOSFET. 10 5
SECTION C
3. Attempt any one part of the following: 1 x 10 = 10
Q no. Question Marks CO
a. Outline the theory of light generation in light emitting diode, with necessary 10 1
expression for internal external quantum efficiencies.
b. Drive and evaluate the expression for Schrodinger Wave Equation. 10 1
4. Attempt any one part of the following: 1 x 10 = 10
a. Explain the different kind of energy bands in intrinsic and extrinsic silicon with 10 2
proper example.
b. Calculate the fermi level position in Si containing 1016 Phosphorus atoms/cm3 at 10 2
100 degree assuming 45% of impurities are ionized at this temperature. Also
calculate the hole concentration.
5. Attempt any one part of the following: 1 x 10 = 10
a. Explain the small signal switching models with proper waveforms and example. 10 3
b. Express the diode current in PN junction diode with the proper derived expression. 10 3
6. Attempt any one part of the following: 1 x 10 = 10
a. Define the Schottky diode. Deduce the expression for current voltage relation in a 10 4
Schottky barrier diode.
b. Illustrate the Ebers-Moll model with its characteristics and example. 10 4
7. Attempt any one part of the following: 1 x 10 = 10
a. Discuss the structure of an N channel depletion type MOSFET with10a neat 5
diagram.
b. Write short notes with circuit diagram on: (i) Photodiode (ii) Solar Cell. 10 5

1|Page
Printed Pages:2 Sub Code:KEC-301
Paper Id: 233650 Roll No.

B. TECH
(SEM III) THEORY EXAMINATION 2022-23
ELECTRONIC DEVICES
Time: 3 Hours Total Marks: 100
Note: Attempt all Sections. If require any missing data, then choose suitably.

SECTION A

1. Attempt all questions in brief. 2 x 10 = 20

(a) Classify the materials on the basis of energy band gap theory.
(b) State the de Broglie principle of duality
(c) Define sheet resistance.
(d) Differentiate between drift and diffusion current.
(e) Draw the I-V characteristics of pn junction diode.
(f) Define the depletion region in a pn junction.
(g) Draw the input and output characteristics of BJT in CE configuration

2
(h) Determine the current gain β in CE configuration of BJT, if =0.98.
90

13
(i) Draw the small signal model of NMOS transistor.
_2

2.
(j) Explain the photovoltaic effect.
P2

24
5.
3D

SECTION B

.5
P2

2. Attempt any three of the following: 10x3=30

17
Q

|1
(a) What do you mean by effective mass of electron? Derive the relation between
6

effective mass and curvature of energy band.

:4

(b) A Si sample is doped with 1017arsenic (AS) atoms / cm3. Calculate the equilibrium
28

concentration of electrons and holes at 300K. What is the position of fermi level
:

(EF) relative to intrinsic energy level (Ei)? Also draw the energy band diagram
13

showing the position of fermi level and intrinsic energy level. Given that intrinsic
carrier concentration (ni)for Si is 1.5×1010 / cm3
3
02

(c) Using the concept of drift and diffusion of carriers, derive the continuity equation.
-2

(d) Explain Zener and Avalanche breakdown in detail.

04

(e) Write short note on following-

(i) LED
1-

(ii) Solar cell

|0

SECTION C
3. Attempt any one part of the following: 10x1=10

(a) Derive the time dependent and time independent Schrodinger wave equation.
(b) Differentiate between direct and indirect band gap semiconductors. Also discuss the
variation of energy band with alloy composition.

QP23DP2_290 | 01-04-2023 13:28:46 | 117.55.242.132

4. Attempt any one part of the following: 10x1=10

(a) Define Fermi-Dirac distribution function. Discuss the temperature dependence of

Fermi-Dirac distribution function for semiconductor material
(b) Derive the Einstein’s relation for electron.

5. Attempt any one part of the following: 10x1=10

(a) Derive the expression of depletion width in a p-n junction.

(b) Consider a Si abrupt p-n junction at 300K with Na = 1018 / cm3 and Nd = 1015 / cm3.
Determine the value of contact potential and width of depletion region. Given that
intrinsic carrier concentration (ni)for Si is 1.5×1010 / cm3 and dielectric constant (K)
for Si is 11.8.

6. Attempt any one part of the following: 10x1=10

2
90
(a) Discuss Schottky diode in detail and write its application.

13
_2

(b) Draw and illustrate the Ebers-Moll model of BJT.

2.
P2

24
7. Attempt any one part of the following: 10x1=10

5.
3D

.5
P2

17
(a) Explain the accumulation mode, depletion mode and inversion mode with energy
Q

band diagram for a MOS capacitor.

|1
(b) Explain the construction and working of N channel Enhancement type MOSFET and
6

draw its drain characteristics and transfer characteristics.

:4
: 28
13
3
02
-2
04
1-
|0

QP23DP2_290 | 01-04-2023 13:28:46 | 117.55.242.132