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Unit 1

The document discusses various aspects of electronics engineering, focusing on the properties and applications of conductors, insulators, and semiconductors. It details the behavior of materials under different conditions, including temperature effects on conductivity, and the functioning of diodes in forward and reverse biasing. Key concepts such as energy bands, charge carriers, and the role of impurities in semiconductor behavior are also covered.

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Tony Parker
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0% found this document useful (0 votes)
6 views

Unit 1

The document discusses various aspects of electronics engineering, focusing on the properties and applications of conductors, insulators, and semiconductors. It details the behavior of materials under different conditions, including temperature effects on conductivity, and the functioning of diodes in forward and reverse biasing. Key concepts such as energy bands, charge carriers, and the role of impurities in semiconductor behavior are also covered.

Uploaded by

Tony Parker
Copyright
© © All Rights Reserved
Available Formats
Download as PDF or read online on Scribd
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Aluuimiun — ete - mepals , - thos Nowe positive temp erakine aft rasbonce oe ye 8 hor When temberaturr aS conductor is Wnureored , its reondi.vit also: incre ases- Pp to ose ( ot eee) x En eae Roma A polmenel by Clechons “dd peng lia a sold ZF conduction b ard NP VolIm@ band ) 4 ex i * Snoulators € ‘ . — or bad or peor condue tors d alee : = mn howe ve ae natn U because hove no Jree electron th cl Pr ecbuc twhent * = Exampus:: Gla “t Quartz Rubber Bakeube ~ ete ING apittanss | yadave temperate vodgiont f AZZ tenclu ction Bond [eager ge = 5 av or more - QQ) Vale Bond - ( Enage band a 4. ev 7 ww Electron volt Yow & uit i wang ur otemig 4 muctear pigste lev = b602 x10 oule = K)0 t Pits x Semiconductors — Forbiddin gap should BE ee 0.6 ev to "3 ey @ = an those mateals whose tonduchv'tur e Le betwen conductors awl iwasylotors: @ a @ = uh are neither good wnoluc tows ° nor ool maulato rs come li si) aaa, \ienats = eral: Bsn | Oe Vevaaae © German um (Ge) 2,6,18,4, 1| Betis © —Nnm he temp wat ure 4 A Aemiv ducer 4 DB screed J ° us wonduchvity uncreases e ¢ | Le rcaces) . € Semi conductors awe. ne ative temper er atahy 7 coef dst fut toustam ce, ; é € @ e € LLELZIO Conduction b and A : Croat Bary gap % LEV . ha, ‘ \\ \\\\ votunce band (a “ ‘ | (Envgy bend were) eee Types of Semiconductor . Intrinsic Extrinsi¢ ( Pure) : i poe k Ot n-type p-type ) Sntaimic Semiconductors AVA fan CON Ee = A somiconoluctor wr On extrarm m & or : A sewiconducber ™ which electrons _dendk ermal holes art solely created bal th Cpcitcodubun l “Ua Grchensie Seni conduct? — Cyamble St XdampP Ge nw Satanic aumi con duchY , UAL | i re Known as Situnsic Aemi conduct we 4 e Vv numb w 4 i elachows = uumbu, 4 eles - St 14 @ 32 28 2,6, 18,4 ("\ {*) {") At Aoom temberature , 4 have Urstte Curmuct tow du ckon capably (i no free dlecthons), | asi ewe ee eee e ge eee eee A 6 Ww Extwwsic Aum) onole boy. The eledtucal conduchvity of drlendee Aowiconducty com be umereased ( Rakdung some inp und vm ee ol exyst alin ctee | “Ths proto w cated pope : J She aepond mataal ( one atom per FALLS oe odows f pure ennai ermdctor_) C8 com de ec Hn af -ea ese s ee wee ecco Meneses cee oessv00c02 Teivalunt_abow Penctavelout ferns — b ever (Acceptor) t ) Bismuth Gouium Anti mow Tudliun AYA WAS Dlwatviulr Poop her Povey h se Uy Avorn Lhe ‘ fu Vohban ce the btw electro; ———— | \ Wun & small Qmoutt, Whom & Small amount xe yiy olewt inp wn & Tad» puntewobat “tel to a pubs omi wiadiach he + te aa fete au senicndaat Sg a Avs wlliony” OF “Till wld tert a t- Wp ernare ‘Aowni coda dl Bom) condueloy h re - Swat Sgt [ Semiconductor D Diode = > my not possible to “il ay device. wav a fe Aum cowl eer: a “t " ° we have 40 Me them tegen © : ® 4 I | A e semi conde bor and om n-type sericondile ane eA tog ethrc with the hdl a apeoel e vou oe to eden a frye ¢ © cauled pode” ; Cathode Ande pe ~_ bee awice Sith tWo @ fF ids)’ elements id fot Thode smo de @ pf + eho Y peande * Cpsidey -b banie but block en we | n—ep—¢ Oia Poe ae | Atpyns Tuncki en ul (eee | roles S> \ Atoms with ° | 17 tlectroms © s e = Cathede @ e ° i . ewmnally —— Aeocanday oO er Thermal “ "eral dea eeu y eased ele chev dole Arete purr - ives in cm Room ah re Aastice eo Electous toe oe @e800c4e £ - | : fhe "yw" side coma tt a electrons C4P e., u a ew therm © na oe Lee bo | erated ties 0 CaM > HOLS ba “ b - & “ge puree Sine “pi oide comin Cbg e ee @ e et lt ctnans ° te God ~ Aegan: ; . Ws o Majuby coins > tle A M COMM > Elections e @ Bob ow) oud Flee oe batt ae Q @ @ e ° -@ ch ° tre paseo ayo “t ° conus At ® pam es bifurion ® e e 2 ° e kvode — Cathode - eas On the n-side, ; 10+ e@ ‘the {4 elects frown’ aide wiht | tato “ne b-side) tnd, Ageombune with Mae oles present HAL * Each electou ad wn inbo tne side wid Leave bebuhd HK fositave immobile ion ® wm tha n-Aide: ee — —_——— Now, gu dhe p-sides : ) When an atom accep ty si ee atom = loAU aha elecimeally neulrar ae Qnd become a meg ce Lmmo>} - bide: mm my poees | Bue 4 thus Acwmb wv akion oLw> , a een mumbue 4 postive a acum bat : age . ae te immobile Lews iow Vw ae ir nd t “i ecu nears Ine inetien: © posi Five qq” ne _ Negehe oS hmob He ‘ Hl i iow COC CCHH ROPE Zero eC0e o ° Se eS Se Se So ° * be e ae n- ype ° Te ee onl e@ @e @ Bein code Also yf Radin > id Ha OS am — am: aed \ > eae cont qund jmmebile jens andl no free diye ; conus Aur od elactrous oe holes! vow" ” This Na pn Po “depletes 's] Tee fret chiye tum » ‘ne neqaive tharged Con m lke p- aide will Wat art Athe tyro electrons pul be cctlempt to Mute toby Uae prside ord tu some hme the Hifi wi LL atop tormblete . 1 At Macs powrt , the finns bs 40sd bg howe attamed am ny Sn the stad eypitirhinm “Uns aa olumed. i i WN fp Auth an | extent Anh eelmond cannot CroAd MHL (om & “A Wee © \ U tod betwen Note:- We extumal volt uw hied. , — tne temas Cams. Te sehen, homce, tne pon qaen is dad be Urbinasd Bamied Potertal 9° Funan Potenbal. (Vs) Due do we yrmcé immobile postive @ at ne ate lens om apprai te aay dn 5 ; d — 97 t an a= F oo on oledue fad pw creaked exons tine furrction, v . oO —feteycteal w cretedl - a uo called ‘Barsmr potential of * sumction Potential" Cut vn Voltage” es009000000 Poavveovcee @ SS SCCC ESO eo oe reer erce pore ereocepessveoccerecs 12: ‘, ( Pi Hy bee at 4 eauled, Baan rolw al CauAs aby to ‘ey potatial: i ( “ osiben ane pasrcer Pp : a electrons ord hele as Ne one LL. pest oat qe extemal PC ee her app : uw i a A ieee diode wy Veaed pinged . P 13: Factors dea ng the baer, potential valut, A Komi concluctoy matoraly ude ( diicaw er Ger na dni ws a Tne tates concentration of Si or Ge , Kn A the * 4 upueg en pak n Aides! ee Tempovat une Te encration of ris aie Augina oe p or n side 4 nase a: (a) Both side any um) @eeceee > « 7 Se hie ee a @ur Swat, Sing h iin es. —P Biast _o PN |_Tunetion Diode When the pe jerten b (eee | the oa te Loyer (Aegem) gece | lear ond doles | a 1 and we ea inn ios b abale egies sep? peg net om unbiased Thuy the cunest veg pice Ooereeposerecccce a z & e ey puncte By 7 " ane cumemt to w, ne noe to extymal PC volt bd Aomi conducdor diode vy Tes proce wv called Dims Reverse Fone gang ee perv ) F) Forword Sioaing ip connected tne posite ed al 1 AL ( dwo a Wt wi extumal SC AOvte And the m- At de (Hasnose ) iy connect “We negalvd aa ptrteceretes > IS temmal 4 “tha DE dovrce, thn ne bidamg WB, sud tD ‘be " frat biaswg. obo conventional cowl nod, + Un We alrect olue ty “the oe biam ( -opeaation 15 formand Pierng dhedes— Awol af conte dt © Hole © Elechow n SSeS Ss 9 0 Ole ee Hos o> HOO. es Fee 8 ! oP logic «ses ‘ Ca Due do dhe negative terminal extunal AB UAC eennacted tp “ba n-Ae ee wecthows pe" n-ajde are pushed do words ~—bhL prade Siena Ane posrtwe wd be pile push hnblis from po aide dower Wr y- side eee é wees ec ce Poe ceo esc obete se 800 08 e% XR COHSHHSCOHEOHOHSCHHCP SEO POCA EOaDT Oe ROSE : tnto noclral ote pw lows react nV pre leds Wide convert Unt pens ans Tato medial alors : | : Lotion As a Acpult a Shur, pi the gop ee cage will Aeduce* eh os atte, ae hen gt ae ep) Evita ab a parent valus. . 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C0000 Op eeeoecereoec: 24 Hence at a comtant tempor aba Ho rwerse saturation aya constant } don deb enolic it Sn having, voltage; It dew mw bi dur to minodd Cocthoda to Aveda ‘ = St jows COMMA | — Str value vb much Amalhy Uda forr® ewhent + endant reverse va Jing but olspen t on bemmper dune Resistance Rovers Biased Biode’- Sa Oe ay lp voy Aamalk D> bs roevtete youd 4 a Rewerse Biase ode ws v L : qu’ 6 * | de ow gavoted Resend | hundde KD-+ | Yh volul w ew te Volt acres Revs’ Biased Bio _ me revs biased diode w eyuivalent ta Lone value resvator: es Rr pr —Wwwi— R bad R: =!|-— sae hk ‘ee ae | e@esecce 5 » « Wee COcecce Peenecreseevretsecseoe Jt Jorms a hotewteal divide, with The curs | Una i ryjactouce R, achovs tre extumel, voHoge “ ; : 7 li'o he Howe, “tne reverse volt oe Vp acum Lhe oo ‘ wb quer by, ye #e'™ KO R+Ry Boe koe ¢ rey t R+R,= Ry) : YAM pe J pow te Ry = at ) rept ob = Vo appt ope (bot ca bh ro XI Yhur the reese volt Dm the appa OO hie, He oLuuty f Ya. appears ce the poral 4 ME? Je alt the rwerae v ne owe voltoft . ts treated py a eee eee ees TOe HOO Poe HH ee pPeeoeeoesesecs: 23- eel Breakdown _ir in Reverse. 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BRwe ud . poe 7 a Ji L yo 9 “yy ° Ay bow Oe Yrt- fw : pn s Ss § & < ke volt mee cy diode cunt Bd BY ae t ee cwrunt iA ene OL Ane WS 9 Me y rine © cyst wn th Z a o jhe Wy tn bite ME “ue plant | | ere ores rida Ie Qy conned ‘Xd | pos . : jj obk’ (Go “f tys oraer f fe” wh) > e yo ltog 2) . word. diode cat. tyke amie [ree — J a yo lboye ob pws DA | (ome WOE «op ‘U Daan ow bee | \ stoxds nd ponsnd Pe . chon vito ao diode ° rd denoted b We i . “ > a i ole W wre bosniet otential + 7 ge died VOB for Li diode v= OFY , yo? eta. SRO eG Se v ° ol wd ob 28. : ' L ve the / e A diode 4 yw bio ° @ cut um voltage © dotahw of & bjodé (e) Reverse cnannct Mise Tn ee, 74 af ee = y Ly | Revere ect me Clee Chews o| Bol s * + zy a ° wa OV | : a © appen pee thd U eewse 7 - . cunt J, mp e e- Cunt ow Who ; e averre be ost ab ip a e Qwautd, whack t° a " wl OAS he rwverse yorrage is ingest eae se “ Mone ion wel ts ( Sous et Bee th ° ation wrt olotd vd ow yore VY ft ° | om 4 oreline Va. - 50-100 vous e bt dep ons Un be 55 en ws Ws bALakdowk ec5aoeeeov5040e é = S z ¢& te ef ee aE mle is obtamed *t amd yoervAe a, (4) Characteriwihv_ef a biode combwng th ferworel chraract Urata qe dtode- eae ee Forward ( Breakdown vortagt) thakacterotio l Von 1st | v e GEL , aR " eae volt (knee vse) ce cxhactwato vz (ua) down vott Vote ty the reverse bAeak a Nob iy thee reworbe vortoge at which syne bAcakdowu pceuns ° jp ov wb dhe reveroe curt Lo BR cowstant one “tit Amal ' facie com a it ard epecating bumep pale eeeeseesecse = Swati gm ia 30) | af bilicow awd Gefraaud um ~ I | 9 fireman, s 4 ; < ? e Forn aad ey Cnoracberintv a7 e a ce e Reverse Forward volt % Dw (vel 7 ° | a 6 © poweme Suarocteris ho © ait Reweyhe cudnt A 6 (nA) , e Ma blode Gormaninnn diode @ |Fno Pavamnetr- ate 10 (Ge) ~ 1. [Motowal used Silicon erm anim e 2+ | cut-mw ee. O-FV Ozv ° 3B [Revewe A nn cowl? Sn nntao oanpon| Th micros Us " 4 effet t Tem peretune Lows MoAL e@ 5s | Breakdown Voltnge High, Loww e : : Me 6+ | Apprectons Rect}io, cuppa | Low volt s th at ONS ‘tr 7] Low ‘Lempurabone wf eee - 1h @

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