Small Signal Operation and Models
Small Signal Operation and Models
The first important design rule is that the BJT must be biased to
the active mode.
For a BJT amplifier, we find that every current and every voltage
has two components: the DC (i.e., bias) component—a value
carefully selected and designed by a EE, and the small-signal
component, which is the AC signal we are attempting to amplify
(e.g., audio, video, etc.).
It turns out that separating BJT currents and voltages into DC and
small-signal components is problematic!
Let’s do an example!
vI
RB
BJT in saturation
vI
VCC
3/16/2011 BJT Gain and the Active Region 2/4
Note that:
vI vO Mode
0 VCC Cutoff
VCC 0 Saturation
____________________
Sir, it appears to
So, what me that the active
good is the region is just a
BJT Active useless BJT mode
Mode ?? between cutoff
and saturation.
3/16/2011 BJT Gain and the Active Region 3/4
d VO
d VI
VI
VCC
We note that in cutoff and saturation:
d VO
≈0
d VI
while in the active mode:
d VO
>> 1
d VI
DC and Small-Signal
Components
Note that we have used DC sources in all of our example circuits
thus far.
The result will be voltages and currents in the circuit that will
likewise vary with time (e.g., i (t ) and v (t ) ).
iD (t ) = Is e nVT
vS (t ) =VS +vs (t )
T
1
T ∫ vs (t )dt = 0
0
Also,
For example, the junction diode voltage might have the form:
vD (t ) = 0.66 + 0.001cosωt
0.66
t
0.0
DC and AC Impedance
of Reactive Elements
Now, recall from EECS 211 the complex impedances of our
basic circuit elements:
ZR = R
1
ZC =
jωC
Z L = jωL
ZR = R
1
ZC = lim =∞
ω →0 jωC
Z L = j (0)L = 0
1
ZC = lim =0
C →∞ jωC
Zero impedance!
+ vc (t ) = 0 −
IC = 0 C = lim C
C →∞
ZC < 10
10 > ZC
1
10 >
ωC
1
ω >
10C
Z L = lim jωL = ∞
L →∞
+ VC = 0 −
iA (t ) = 0 L = lim L
L →∞
Z L > 105
ωL > 105
105
ω >
L
Note that this is still a fairly low signal frequency for many
modern electronic applications, and thus this inductor would
be an adequate AC choke. Note however, that building and AC
choke for audio signals (20 Hz to 20 kHz) is typically very
difficult!
The Small-Signal
Circuit Equations
Now let’s again consider this circuit, where we assume the BJT
is in the active mode:
VCC
RC iC
vO
RB
vI
+
iB vBE
−
1) vI − RB iB − vBE = 0 (KVL)
2) iC = β iB (BJT)
3) vO = VCC − RC iC (KVL)
vBE
4) iC = I s e VT
(BJT)
3/28/2011 The Small Signal Circuit Equations 2/4
Now, we assume that each current and voltage has both a small-
signal and DC component. Writing each equation explicitly in
terms of these components, we find that the four circuit
equations become:
(2) IC + ic = β (IB + ib )
IC + ic = β IB + β ib
(VBE +vbe )
(4) IC + ic = Is e VT
VBE vbe
IC + ic = Is e VT
e VT
VI − RB IB −VBE = 0
vi − RB ib − vbe = 0
IC = β I B (DC)
ic = β ib (small signal)
VO = VCC − RC IC (DC)
vo = RC ic (small-signal)
3/28/2011 The Small Signal Circuit Equations 4/4
Finally, from equation (4) we, um, get, er—just what the heck do
we get?
(VBE +vbe )
(4) IC + ic = Is e VT
VBE vbe
????
IC + ic = Is e VT
e VT
VBE vbe
Is e VT
e VT
???
A “Small-Signal Analysis”
of Human Growth
Say the average height h of a human (in inches) is related to
his/her age t in months by this equation:
h (t )
65 inches
We shrink
when we age!
Those awkward
adolescent years!
t
70 years
d h (t )
= (2. 059 x 10-10 (45 − t 12 )5.75 )
dt t =60 t = 60
T evaluation point
3/16/2011 A Small-Signal Analysis of Human Growth 4/6
d h (t )
h (t ) ≈ h (t ) t =T + ∆t
dt t =T
d h (t )
h (t ) ≈ h (t ) t =60 + ∆t
dt t =60
= 41. 16 + 0. 34 ∆t
h (t = 480) = 65 inches
h (t ) ≈ 41. 16 + 0. 34 (420)
= 181. 86 inches
d h (t )
h (t ) ≈ h (t ) t = 480 + ∆t
dt t = 480
= 65. 0 + 2. 2 x 10 −6 ∆t
A Small-Signal
Analysis of a BJT
The collector current iC of a BJT is related to its base-emitter voltage vBE as:
iC
vBE
iC = IS e VT
vBE
iC (t ) = IC + ic (t )
and
vBE (t )
iC (t ) = IS e VT
VBE +vbe (t )
IC + ic (t ) = IS e VT
Note that the value of vBE (t ) = VBE + vbe (t ) is always very close to the D.C.
voltage for all time t (since vbe (t ) is very small).
We therefore will use this D.C. voltage as the evaluation point (i.e., bias point)
for our small-signal analysis.
VBE
vBE
iC vBE =VBE
=I e VT = Is e VT
= IC
s vBE =VBE
d iC d ( IS exp ⎡⎣vBE VT ⎤⎦ )
=
d vBE vBE =VBE
d vBE
vBE =VBE
IS vBE VT
= e
VT vBE =VBE
IS VBE VT ⎡A ⎤
= e ⎣ V⎦
VT
A simple approximation
Thus, when the base-emitter voltage is equal to the D.C. “bias” voltage VBE , the
collector current iC will equal the D.C. “bias” current IC .
VBE
iC = IC + ( IS VT ) e VT
(1) mA
VBE
iC = IC + ( IS VT ) e VT
(3) mA
VBE
iC = IC + ( IS VT ) e VT
(-2) mA
VBE
iC = IC + ( IS VT ) e VT
(-0.5) mA
where we have assumed that scale current IS is expressed in mA, and thermal
voltage VT is expressed in mV.
For example, we might find that the value of vbe (t ) at four different times t
are:
vbe (t1 ) = 1 mV
vbe (t2 ) = 3 mV
vbe (t3 ) = −2 mV
vbe (t4 ) = −0.5 mV
iC (t ) = IC + ( IS VT ) eVBE VT vbe (t )
This is a very useful result, as we can now explicitly determine an expression for
the small-signal current ic (t ) !
iC (t ) = IC + ic (t ) = IC + ( IS VT ) eVBE VT vbe (t )
Subtracting the D.C. current from each side, we are left with an expression for
the small-signal current ic (t ) , in terms of the small-signal voltage vbe (t ) :
ic (t ) = ( IS VT ) eVBE VT vbe (t )
IS eVBE VT
( IS VT ) eVBE VT
=
VT
I
= C
VT
and thus:
IC
ic (t ) = v (t )
VT be
IC ⎡A ⎤
gm = ⎣ V⎦
VT
ic (t ) = gm vbe (t )
The term is short for transfer conductance: conductance because its units
are amps/volt, and transfer because it relates the collector current to the
voltage from base to emitter—the collector voltage is not relevant (if in
active mode)!
vbe (t ) 1
=
ic (t ) gm
Transfer Resistor—we can shorten this term to Transistor (this is how these
devices were named)!
Summarizing
We can summarize our results as:
Note that we know have two expressions for the total (D.C. plus small-signal)
collector current. The exact expression:
VBE +vbe (t )
iC (t ) = IS e VT
iC (t ) = IC + gm vbe (t )
iC
Exact
Small-signal
Validity Regions
gm
IC
vBE
VBE
The point (VBE , IC ) is alternately known as the D.C. bias point, the transistor
operating point, or the Q-point.
Jim Stiles The Univ. of Kansas Dept. of EECS
3/28/2011 A Small Signal Analysis of a BJT lecture 12/12
The small-signal model will likewise change, so that it provides accurate results
in the region of this new operating point:
iC gm
Exact
Small-signal
Validity Regions
IC
vBE
VBE
Jim Stiles The Univ. of Kansas Dept. of EECS
3/30/2011 Example A Small Signal BJT Approximation 1/3
Q: Easy! Since:
vBE
iC = IS e VT
we find:
⎛ 0.6
⎞ 0.001cosωt VT )
iC (t ) = ⎜ IS e VT ⎟ e (
⎝ ⎠
right?
0.6
IC = I S e VT
0. 6
= 10 −12 e 0.025
= 26 mA
We know that:
ic (t ) = gm vbe (t )
where:
IC 26mA
gm = = = 1.06 Ω −1
VT 25mV
ic (t ) = gm vbe (t )
= 1.06 ( 0.001 cosωt )
= 1.06cosωt mA
0. 7 0.7
IC = IS e VT
= 10 −12 e 0.025
= 1446 mA !!!
IC 1446mA
gm = = = 57.84 Ω −1
VT 25mV
ic (t ) = gm vbe (t )
= 57.84 ( 0.001 cosωt )
= 57.8cosωt mA
Quite an increase!
ic = β ib ic = gm vbe
⎛ β ⎞
ic = β ib = gm vbe ∴ vbe = ⎜
⎜g ⎟⎟ ib
⎝ m ⎠
β βV V
= T = T rπ
gm IC IB
vbe = rπ ib
vbe
re
ie
α αV V
= T = T re
gm IC IE
vbe = re ie
IC VT VT
gm = rπ = re =
VT IB IE
α β rπ − re
gm = = =
re rπ rπ re
β re
rπ = = ( β + 1 ) re =
gm 1 − gm re
α rπ rπ
re = = =
gm β + 1 1 + gm rπ
IC VT VT
gm = rπ = re =
VT IB IE
I E = IC + I B
IC = β IB
IC = α IE
Column Parameters
vbe ib ic ie
vbe 1 rπ = β 1
gm re = α g
gm m
Row 1 gm 1 1
ib
Parameters rπ
=
β
1 β (β + 1)
β
ic gm β 1 α=
β +1
1 gm 1 β +1
ie = β +1 = 1
re α α β
1
ib = vbe
rπ
vbe ib ic ie
vbe 1 rπ = β 1
gm re = α g
gm m
1 gm 1 1
ib
rπ
=
β
1 β ( β + 1)
β
ic gm β 1 α=
β +1
1 gm 1 β +1
ie = β +1 = 1
re α α β
RC iC 2) ic = β ib
3) vo = −Rc ic
vO
RB 4) ic ≅ gm vbe
vI
+
iB vBE
−
vo (t )
Avo =
vi (t )
β
vbe = i =ri
gm b π b
vi = (RB + rπ ) ib
Therefore:
vi
ib =
RB + rπ
and since ic = β ib :
β
ic = vi
RB + rπ
− β RC
vo = −ic RC = vi
RB + rπ
vo (t ) − β RC
Avo = =
vi (t ) RB + rπ
vbe
ib = ic = gm v be = β ib ie = ib + ic (KCL)
rπ
ib ic
gm vbe
+
= β ib
rπ vbe
-
ie
gm vbe
From KCL: +
= β ib
ic = gm v be = β ib rπ vbe
-
ie = ib + ic (KCL) ie
Q: Hey! Aren’t these the same three equations as the npn BJT small-signal
equations?
With respect to the small-signal currents and voltages in a circuit (but only
small-signal voltages and currents) , an npn BJT in active mode might as well be
this circuit.
ie
E ie = ib + ic
E
v eb
ib = rπ ie
ic = gm v eb = β ib
+ pnp Hybrid-Π Model
rπ veb
ie = ib + ic gm veb
-
ib ic
= β ib
B C
C
ic
npn T-Model ib = ie − ic
gm v be
ib = β ib ic = gm v be = β ib
B
+ vbe
ie =
re vbe re
-
ie
E
E
ie
pnp T-Model
+
ib = ie − ic
re veb
-
ib
ic = gm veb = β ib
B gm v be
= β ib veb
ie =
re
ic
C
The Hybrid-Π and the T circuit models are equivalent—they both will result in
the same correct answer!
However, you will find that a particular analysis is easier with one model or the
other; a result that is dependent completely on the type of amplifier being
analyzed.
For time being, use the Hybrid-Π model; later on, we will discuss the types of
amplifiers where the T-model is simplest to use.
where we recall that VA is a BJT device parameter, called the Early Voltage.
⎛ vCE ⎞ ⎛ ∂iC ⎞
IC + ic = β iB ⎜ 1 + ⎟ +⎜ ⎟vce
⎝ VA ⎠ ⎜ ∂v ⎟
vCE =VCE ⎝ CE vCE =VCE ⎠
⎛ V ⎞ ⎛ V ⎞⎛ 1 ⎞
= β IB ⎜ 1 + CE ⎟ + β IB ⎜ 1 + CE ⎟ ⎜ ⎟vce
⎝ VA ⎠ ⎝ VA ⎠ ⎝VA ⎠
⎛ VCE ⎞ ⎛ 1 ⎞
ic = β IB ⎜ 1 + ⎟ ⎜ ⎟v
⎝ VA ⎠ ⎝VA ⎠ ce
Note that by inserting the DC result, this expression can be simplified to:
⎛ 1 ⎞ ⎛I ⎞
ic = IC ⎜ ⎟vce = ⎜ C ⎟vce
⎝VA ⎠ ⎝ VA ⎠
⎛ IC ⎞
ic = ⎜ ⎟ vce
V
⎝ A ⎠
IC 1
VA ro
Therefore, the small-signal collector current resulting from the Early effect
can likewise be expressed as:
vce
ic =
ro
vce v
ic = gm vbe + = β ib + ce
ro ro
We can account for this effect in our small-signal circuit models. For example,
the Hybrid-Π becomes:
ib ic v be
ib =
gm v be C rπ
B
+ = β ib +
rπ vbe vce ro ic = gm v be +
vbe
ro
- -
ie = ib + ic
ie
E
ie
E
BJT Small-Signal
Analysis Steps
Complete each of these steps if you choose to correctly complete a BJT
Amplifier small-signal analysis.
Turn off all small-signal sources, and then complete a circuit analysis with the
remaining D.C. sources only.
That is, you assume (the active mode), enforce, analyze, and check (do not
forget to check!).
* Note that you enforce and check exactly, precisely the same the same
equalities and inequalities as discussed in section 5.4 (e.g., VBE = 0.7 V ,
VCB > 0 ).
Once you have found these values, you can CHECK your active assumption, and
then move on to step 2.
In other words, we must first determine the operating (i.e., bias) point of the
transistor in order to determine its small-signal performance!
IC VT VT VA
gm = rπ = re = ro =
VT IB IE IC
A: Typically no. You need to calculate only the small signal parameters
required by the small-signal circuit model that you plan to implement.
c) account for the Early effect (in either model) you must determine ro .
+ C
vCB + iC
iB
-
First, note that a BJT is: vCE
B
+
vBE -
A device with three terminals, called
-
the base, collector, and emitter.
A device with three terminals, called the base, collector, and emitter.
ib ic
B - vcb +
C
+ +
ie
E
Note the parts of the circuit external to the orange box do not change! In
other words:
1) Disconnect the red wire (base) of the BJT from the circuit and then
“solder” the red wire (base) of the circuit model to the same point in
the circuit.
3) Disconnect the green wire (emitter) of the BJT from the circuit and then
“solder” the green wire (emitter) of the circuit model to the same point in
the circuit.
This is superposition—
turn off the DC sources!
Step 4: Set all D.C. sources to zero.
Remember:
The schematic in now in front of you is called the small-signal circuit. Note that
it is missing two things—DC sources and bipolar junction transistors!
You could turn off the DC sources first, and then replace all BJTs with
their small-signal models—the resulting small-signal circuit will be the
same!
* You will find that the small-signal circuit schematic can often be greatly
simplified.
If this impedance is smaller than the other circuit elements (e.g., < 10Ω),
we can view the impedance as approximately zero, and thus replace the
large capacitor with a (AC) short!
Students frequently run into problems when they try to accomplish all the goals
(i.e., replace the BJT with its small-signal model, turn off DC sources, simplify,
organize) in one big step!
We now can analyze the small-signal circuit to find all small-signal voltages and
currents.
From this result, we can find the voltage gain of the amplifier.
* Note that this analysis requires only the knowledge you acquired in EECS
211!
These are precisely the same resistors and sources that you learned about
in EECS 211. You analyze them in precisely the same way.
* Remember, the BJT circuit model contains all of our BJT small-signal
knowledge, we do not—indeed must not—add any more information to the
analysis.
You must trust completely the BJT small-circuit model. It will give
you the correct answer!
Trust the
BJT small-
signal model,
Luke.
Example: A Small-Signal
Analysis of a BJT
Amplifier
15.0 V
Consider the following BJT
amplifier:
RC =5 K
vO (t ) = VO + vo (t )
RB =5 K
β = 100
vi (t )
+
_
+ RE =5 K COUS
5.8 V
−
vo (t )
Avo =
vi (t )
4/1/2011 Example A Small Signal Analysis of a BJT Amp 2/10
IC
RC =5 K
VO
RB =5 K
β = 100
IB
IE
+ RE =5 K
5.8 V
−
Therefore:
5.1
IB = = 0.01 mA
5 + 5(101)
and thus:
IC = βIB = 1.0 mA
IE = IB + IC = 1.01 mA
VC = 15 − IC RC
= 15 − (1.0)5 IC
RC =5 K
= 10.0 V
VO
And the Emitter voltage is:
RB =5 K
VE = IE RE β = 100
= (1.01)5 +
IB
= 5.05 V 5.8 V
−
Therefore, VCE is: IE
RE =5 K
VCE = VC −VE
= 10.0 − 5.05
= 4.95 V
IC = 1.0 mA > 0
IC 1.0 mA mA
gm = = = 40
VT 0.025V V
VT 0.025 V
rπ = = = 2.5 K
IB 0.01 mA
VT 0.025 V
re = = = 24.7 Ω
IB 1.01 mA
RC =5 K
RB =5 K B
vO (t ) =
+ C VO + vo (t )
2.5 K
+
vi (t) vbe
_ 40 vbe
+
5.8 V
E
−
RE =5 K COUS
4/1/2011 Example A Small Signal Analysis of a BJT Amp 7/10
RC =5 K
vo (t )
RB =5 K B
+ C
2.5 K
+
vi (t) vbe
_ 40 vbe
RE =5 K
RC =5 K
vo (t )
RB =5 K B
C
ib + ic
2.5 K
+
vi (t) vbe
_ 40 vbe
ie E
RB =5 K B ib ic C vo (t )
+
rπ =
+
vi (t) vbe 2.5 K RC =5 K
40 vbe
_
ie E
This is just a simple EECS 211 problem! The left side of the
circuit provides the voltage divider equation:
rπ
vbe = vi
RB + rπ
2.5
= vi
5.0 + 2.5
vi
=
3
RB =5 K B C vo (t )
+
rπ =
+
vi (t) vbe 2.5 K RC =5 K
40 vbe
_
vo = −ic RC
= −(gmvbe ) RC
= −40(5)vbe
= −200vbe
vo = −200vbe
vi
= −200
3
= −66.7 vi
vo
Avo = = −66.7
vi
4/4/2011 Example Small-Signal Input and Output Resistances 1/6
Example: Small-Signal
Input and Output
Resistances
15.0 V
Consider again this circuit:
RC =5 K
vO (t ) = VO + vo (t )
RB =5 K
β = 100
vi (t )
+
_
+ RE =5 K COUS
5.8 V
−
ii (t ) RB =5 K B C vo (t )
+
rπ =
+
_ vi (t) vbe 2.5 K RC =5 K
40 vbe
-
vi
Rin =
ii
vi vi vi
ii = = =
RB + rπ 5 + 2.5 7.5
vi
Rin = = 7.5 K
ii
vooc
Rout = sc
io
ii (t ) RB =5 K B C vooc (t )
+
rπ =
+
vi (t) vbe 2.5 K RC =5 K
40 vbe
_
E
4/4/2011 Example Small-Signal Input and Output Resistances 4/6
ii (t ) RB =5 K B iosc (t )
C
+
rπ =
vi (t) vbe 2.5 K
+
_
40 vbe RC =5 K
-
vooc −200vbe V
Rout = sc = = 5 KΩ
io −40vbe mA
Avo = −66.7 V
V
Rin = 7.5 KΩ
Rout = 5.0 KΩ
ii io
5.0K
+ +
+
vi 7.5K vo
−
− −66.7 vi −
15.0 V
vO (t ) = VO + vo (t )
RB =5 K
β = 100
vi (t )
+
_
+ RE =5 K COUS
5.8 V
−
+
+
vi (t ) 7.5K
_
−
−66.7 vi