/xeAnswers SECTION-A 1. @ Potential energy due to dipole, t For stable equilibrium, 0 = 0° U, 2. (b) Asw AE cos — pEcos0® = ~ ple =~ ghz And, Force on charge, ‘Then, for q = constant, Now, 3. (a) Due to property of conductor, B is linearly increases with temperature with some fix value of that resistance at minimum temperature (ie., T= 0K) 4. (b) Repel each other, because parallel currents flows in opposite direction. (©) emf induced, e = NAwB = 40 X xx 8 x 8 x 10+ x = x3 x 107 =0.19 volt 6. (a) Diamagnetic materials create an induced magnetic field in a direction opposite to an externally applied magnetic field, and are repelled by the applied magnetic field. Hence ifa diamagnetic material is brought near the north or the south pole of a bar magnet, it is repelled by both the poles. 7. (W) Decreases in both A and B. 8 (©) Aswe know, KE,,,.=hv-W, > eV, = (7- 3.75) eV a V,= 3.25. V 9. (6) This arrangement of p-n junction diode in a circuit behave 10. ates of capacitor keeps on chang tween the plates: as a half wave rectifier: (© During charging, electric flux between the ph i this results in the production of a displacement current 0° AZ) 2 ll. © wear, = (S25) me’12. (d) Energy of absorbed photon, AE la, 1 - =-18.6 ay i 24X13.6 == 186 5 meV hie _ 663X103 x10" Now, wavelength, a 13.05% 1,610" 5.2 min 13, (a) Both and R are tue and 2 is the correct explanation of A. D z 14, (©) For normal setting, M = (! +2) (For simple microscope.) 15. (b) According to the Quantum theory; the light i ed in bundle of small eng, cach bundle being called a photon and processing energy for emission of ee 16. (©) The conductivity of an intrinsic semiconductor is less than that of a lightly ep prtype semiconductor: SECTION-B 17. Two important processes occurring during the formation of a p-n junction g (i) diffusion and (i) drift. (@) Diffusion: In n-type semiconductor, the = Electron dion concentration of electrons is much greater as feces iselease an compared to concentration of holes; while in o@ epeco| ones f-type semiconductor, the concentration of holes is much greater than the concentration of Sicei se eeee électrons. When a p-n junction is formed, then |g ° ee 2|@@|++ +++] due to concentration gradient, the holes diffuse 4 => Hole difusion from p-side to n-side (p > n) and electrons + Hote art diffuse from n-side to p-side (n > p). This motion of charge carriers gives rise diffusion current across the junction. junction. As the diffusion continues, more aa more charge carriers recombine, leading to a buildup of the potential barrier, whic Prevents further significant diffusion of charge carriers across the junction. (i) Drift: The drift of charge carriers occurs due to Vg Potential baie electric field. Due to built in potential barrier, an ars clectric field directed from n-region to p-region is developed across the junction. ‘This field causes motion of electrons on p-side of the junction to P7}° °° °° i n-side and motion of holes on n-side of junctionto [°° °° *|@) + p-side. Thus a drift current starts. This current is opposite to the direction of diffusion current. Past 18. Given Now, Ry =20cm, Ry = -30 cm P = errs cry y 110 Physics™Gon =ti-(y 1) 19. (i) Current a = 2 > & KR +1) 12 = 0.5 (R +4) R=24-4= 209 g) Terminal voltage across the battery VpeE-Ir= 12-0 5x 4=10V) go, Kinetic energy of electrons energy of photon of EM wave de Broglie wavelength, 2, Using (i), we get a x he i an(*) S oe Lesion) mee 184 21, Reason for preferring reflecting type telescope over refracting telescope JuSTBcation (i) No Chromatic Aberration - No refraction in mirrors (i) No Spherical Aberration - Due 10 use of parabolic reflector (ii) Easy mechanical support required - Mirrors weigh less and can be supported over entire back surface. (wv) High resolving power — Mirrors with larger diamete! (@) Brighter image - Large mirrors gather more light waves. OR 1s provide better resolving pow! [any te Given, Here, Ry = R, Re Ss S P m Qk ' Sample Papers eoSECTION-C ar reaction is IH +PH pH +H +Q 22. (i) Nuc Mass of LHS = m({H)-tm ({H) = 1.007825 + 3.016049 = 4.023874 y Mass of RUS = m@H)4m@H) = 2.014102 + 2.014102 = 4.028204 u Q= [omy + my = Me = Mp) in kg] XC 31 MeV 1)+m(H)}]x 931 Mev = [(my + my — Mg —mp)ul X 9 = [{mqH)+ m(H)} = {mG = [4.023874 — 4.028204] x 931 MeV = - 0.00433 x 931 MeV = - 4.031 MeV As Q is negative, energy must be supplied for the reaction; hence the reacic, endothermic. (ii) Nuclear reaction: 2C + (°C = {Ne + He Q=[n(2C) + m(3C)} — {m GNe) + m GHe)H x = [(12.000000 + 12.000000) - (9.992439 + 4.002603)] x = (24.000000 - 995042) x 931 MeV = 0.004958 x MeV = 4.616 Mey As Qs positive, the energy will be liberated in the reaction, hence the react exothermic. 23. (i) Potential due to single charge at C, V = Here, gy = gy = ve = gis =~ Gand ry = So, net electric potential at C, Vo=V, + Vy +.. ig [>] Due to symmetry of distribution of charges. All electric fields are cancel to each other, So,E=0 (i) Potential is a scalar and orientation is irrelevant. Hence, Net potential at C, VY, 12kq wi) Re Tlegy level diagram for H-atom; ners) cd Continuum MEELLLLLLLELY a py yy yyy, ov 0.28 ev ——. 0.38 ev Plund series ~054 eV Brackett series 0.85 ev 'en Sofas 4.5 gy nee 400 Lyman series (UY Region) Ground state a ~1360v 35, Let resistance of metal rod having cross sectional a2 l area A and length [be R, = Also, resistance of metal rod having cross sectional Ry = pee area 4 and length 2/ sreot a [-r= o| =4Rk, Let be potential difference maintained across rod. When the rod is cut parallel and rejoined by length, the length of the 4 conductor becomes 2 and area decreases by For maintaining same current, voy "3 Vv vi sper gg pig Rag = a The new potential applied across the metal rod will be four times the original potential ". 2%) Here, 7 =3 x 105 mis i,B =047 +0357, Charge to mass ratio, a = 4.8 x 10’ C/kg [For o-particle] From Lorentz’s force, F = q@xB) = (3x 105i) x (0.4i + 0.3)) = g(1.2x10°(@ xi) + 0.9x10° (x j)) are : Hy = g(0.9x10°h) texa I Sm Papers 13 Xk4 af Now, a= a = 09X10 Mh = 4.8x107X0.9x 10h = 4.32x 1012 mis? j (i) F=Q@XB) and power dissipated ? = 4@xB).0 =0 The particle does not gain any energy: 27. (i) @) Infrared Rays L fuscular pain therapy — Remote control in foggy conditions — Photography (ays (b) Nerays Uses: To study crystal structure — Detection of fracture in bones — Cancer treatment (ary 9 (i) During charging or discharging there is a displacement current but no conduc current between plates of capacitor. 28. Here, / = Ip sin ot. For solenoid, B = tnt Magnetic flux, 6 = BA = piynl X nr? = pontr® Jy sin oot. Ndb _ Na 2 a gy BA) = = Nitgnte, cos wt @ Enmf induced, = = (Holo © Nanr*) cos of =~ e9 cos wl where, peak emf, 9 = Holy @Nnzr™ (i) Mutual inductance between the coil and solenoid, o=MI aw NO _ PoNnar? fy sin ot 7 isnot OR Given, Np = 650, N, = 25, Vp = 240V, Ip = 1.5A Weave, ae ( We have, =< ¥, Np N, 25 120 Ve= FEV, = Gg 240. = Gg = 9.28V # Physics(i) (it) PV, SECTION-D 29, (©) Gallium being trivalent atom makes bay (3) @) The given semiconductor ig wayne Semicond concentration, Gi). @) In forward biased ponsiumetion, external volt . J a ‘age decrease: e pote arries so curvent is maximum, While in neces biased onions ion penta are, increases the potential barvie,so the ewsienc ver () (a) When pon junction is reversed biased. the width of the large and so, 1 i B= 2 se he electric field ( = 4) becomes very small, nearly zero, oR 0) diffusion in forward bias, drift in reverse bias, 30. (i) (©) For TIR, i > i, (ii) © Here, i, = 30° v = csini, = 3X108x sin 30° 3x 108 x 0.5 1.5 108ny/s (Hi) (©) Dispersive power of prism depends upon nature of material of prism. (iv) (6) We know that, 8 = (n-1) Aand8 = i-r 8 = (1.5-1)30 = 0.530 = 15° Also, 8 =i-r=0-r 15° = 030° [v 4r = 307] 6 = 15° + 30° = 45° 0 =i = 45° OR ® Sample Papers Ms \ \1. This Question Paper has 5 Sections A, B.C. D.¥ i 2.Section A has 20 Multiple Choice Ouestions (F 1 / Al A= 30° = A= 60° 272 2 31. (@) ©@ Differences between interference and diffraction Diffraction Interference @ It is due to the superposition of wo from two coherent waves coming sourees, Tt is due to the superposiinn secondary wavelets originating different parts of the same wave' ‘The width of the interference bands is equal. @ The width of the diffraction bana, not the same. “The intensity of all maxima (fringes) is same. @ The intensity of central maximum, maximum and goes on decreas: rapidly with increase in order ¢ maxima, (8) As we know, Fringe width, B = Factors which affect B, are: 1, Wavelength of light (2) 2. Width of slit (d) (i) Here,d = (a) Angular width, 0 = aly AD () Fringe width, B = “7 (i Relation of object and image distances of a convex spherical surface: Let SPS' be the convex spherical refracting surface, separating the two media of refractive indices my and ny respectively (nm) <_ ny) iv. medium ‘I’ is rarer and medium. “9 is denser: Let P be the pole, C .5 cm. z fii? ime B‘Denser mest” pee oy the centre of curvature and PC the principal axis of convex refrac ing surface. 0* a distant point object on the principal axis. The ra i is incidet" 2 0 axis, ty OA starting from O is incide"™ on point A of the spherical surface, CAN is normal at point 4 of the surface, Due going {rom rarer to denser medium the ray O4 deviates along the normal CAN hl Physics-X!normally on the spheries Both the rays AB and PO ame ee of point object Qo i Let be the angle of incidence aq, medium ies. ZOAN vO Fand 264) = heya From equation (iii), eae Substituting v: yta _ My Be H A) = nye) oo Let h be the height of perpendicular drawn from 4 on Principal axis ie, 4M a, Band y are very small angles, wes of and r from (i) and (i), we get tan & = a, tan B=Band tany=7 Substituting these values in (7) my(tan y+ tan a) = ny (an y—tan B) As point A is very mo) close to point B point M is coincident with P Ai From figure tan a = 4M. Substituting these values in (w), we get he hoy (4. +) ™\'pc * op] = "2\PC- Pi Ue ae eet | ni ‘ei Gb Gonamene ben, v and If the distances of object O, image J, centre of curvature C from the tele 7 a ni R respectively, then by sign convention PO is negative while PC and PL ave p Thus, 1 SS BO jiu APL: RE +PC Substituting these values in (vi), we get ay ' Sample Papersw R Here, R= Gem w= 6=3 = Sem, = 15g = | " ny My—m From the relation, 4 AC generator: A dynamo or generator is a device which converts mechanical ey, into electrical energy. Principle: It works on the principle of electromagnetic induction, When ,, rotates continuously in a magnetic field, the effective area of the coil linked noms. with the magnetic field lines, changes continuously with time. This variatig magnetic flux with time results in the production of an alternating emf in the, 3 Expression for Induced emf: When the coil is rotated with a constant angular sp @ , the angle @ between the magnetic field vector B and the area vector 4 of the. atany instant is 6 =o (assuming 0=0° at/ = 0). Asa result, the effective area o, coil exposed to the magnetic field lines changes with time, the flux at any times $5= BA cos 0= BA cos wt b Armature cl From Faraday’s law, the induced emf ma we for the rotating coil of N turns is then, TIN add, e=-NGP -NB4S (cosy) —], ¥ ‘Thus, the instantaneous value of the ———"\® | emfis NBA o sin ot where = NBAw=2nvNBA is the maximum value of the emf, which occurs when sin wt = #1. If we denote NBA® as éo, then e=egsinol => = egsin Invi where v is the frequency of revolution of the generator's coil. Obviously, the emf produced is alternating alternating e and hence the current isCurrent produced by ammeter; becaus an ae generator erage sate CANMOL be im ‘The source of energ: a ergy Cover full cycle is 2 ed by moving coil 10, Maximum emf induced Emax = NBAw 20 x 3.0 x 10-2 x 201 ‘x5 0) x 107 x 50 = 600 mV Maximum value of current induced ned = 600 = in oR (i) Impedance: The opposition offered by the combi component to the flow of acis called pe a me 7 fathemat a resistor and reacti cally it is the ratio of rms voltage applied and rms cur ea rent produ ir 7 Its unit is ohm (Q). a R u a Ke Vig Vy Ve V=yV, sin ot (a) (b) nce in LCR series circuit: Suppose resistance R, inductance Expression for Impeda and an alternating source of voltage L and capacitance C ar V = Vo sin at is applied across it ( flowing through all of them is stance R is Vp voltage acto ; “Phin olka Va sucemttent kare 7 ‘90° while the voltage I’ will ag y, are in opposite li ¢ connected in series + (fig. 2). On account of being in series, the current the same. Suppose the voltage across res gs inductance Lis Vand tance C is Ver the same ‘will lead the current by angle 90° (fig. b). Clearly Ve ntial difference= voltage across capacit phase, the voltage V7, behind the current by angle therefore their resultant pore? rections. -V,fV¢ > Vd» » difference between tyne ore Leodn, i the cir é them is 90°. As applied voltage actos will also be V. From fig: Per wo 2 Von", Pavat% yy = veyVrt or! a | my : Xi fut Va =Rin Vented na et™ 119 Wk J Sample Papersst = capacitance reactance and X;, = ol where BC v= (Ri? + ¢ a 3 Impedance of cireuit, Z = "> = R° + (X,- nea (2 ge. y ie, Z= (RP + (XX) Hsin (at + 4 Tnstantaneous current P= VR + wt) , current and voltage is given by, tan 4 < et 0 R The phase difference (}) betw: Resonant Frequency: For resonance 6= 0, 50.4 a LC aL =o Resonant frequency « in(®e~X,) _ (Xe-Xy) i,k When current and voltage are in phase o=0 = Xo-X, =0 > te x, This condition is called resonance and the circuit is called resonant circuit, (ii) Case I: X,= = (RX? = (RETR? = BR R__R 1 Power factor, P.=cosp = = __ fi Zz QR Ve Case I: X,=X¢ Z= JR? + (XX)? = VRF=R fa R_R P fi 7 =e fpet Power factor, Razed oe v2 38. () Consider a parallel plate capacitor, area of each plate being A, the sepa between the plates being d. Leta dielectric slab of dielectric conteacg A vat cht ¢< d be placed between the plates. The thickness at 1 air between the plates Ieharges on plates are +2 and ~Q, then surface charge density o = 2 A PhysicsThe electric field between the plates in ait, ‘The electric field between the plates in slab, ‘The potential differe work don 1 carrying unit positive charge z y from one plate to another Ex (as field between the plates is pL constant). F Q =E(d-0)+ (d= 4 i c Mea! Q yo 0 eA 7 Q Capacitance of capacitor, ¢ = Van or, Here, ¢ rol (i) From the circuit shown, 4uF - HF 10uF SuF ——_—— Our uF = at Sample Papers—— Time: 3 Hours 1 This Quest ns A.B.C.D, ~ ions 2.Seetion A hae ras on ark srork: done in bringing fron sna sleet field E. a mare : Work done on ge against the field F a: 3 hours, w=) eh dork done on gg against the field E-due 10 dy em crions: Same as the la Work inst the field a eee ten ce Potential enengy of the system = Total work done in assembling the syste a point P lies ata distanc Ua tty _ 1. A Fierie potential at point or © a, The magnitude of the «a potential energy of system yt Uys Uo (i) =9x 107 C1 +2 9x 10J i} qua NIC. From the same dara distance of @im 5, Which one of the foll Surface when irradiate (@) Rubidium (© Cadmium 4. A hydrogen atom ma photon emitted is). n= 5 ton = 2 orbitis @ = 3. Two parallel conduc in vacuum. The fore (@) 64 x 108 Nim (© 4.6 x 107 Nim 6. The ratio of the ma electron revolving (@) Zero (©) 88x10" Cikg 7. Along stratight wi distributed across