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Transistors

The document contains practice questions focused on transistors, specifically covering N-channel E-MOSFETs, FET vs. BJT input impedance, and various biasing configurations. It includes calculations for stability factors, Q-points, and characteristics of bipolar junction transistors in different configurations. Additionally, it discusses circuit diagrams and the analysis of input-output characteristics for common-emitter, common-base, and common-collector arrangements.

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4 views

Transistors

The document contains practice questions focused on transistors, specifically covering N-channel E-MOSFETs, FET vs. BJT input impedance, and various biasing configurations. It includes calculations for stability factors, Q-points, and characteristics of bipolar junction transistors in different configurations. Additionally, it discusses circuit diagrams and the analysis of input-output characteristics for common-emitter, common-base, and common-collector arrangements.

Uploaded by

suryakirangaya
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Practice Questions on Transistors

1. Explain the construction and operation of an N-channel E-MOSFET with its drain
characteristics.
2. Why the input impedance of FET is higher than BJT?
3. A transistor with β=100 is to be used in the collector-emitter feedback bias configuration
with RC=1.5 kΩ, RE=2 kΩ, RB=370 kΩ, VCC=12V, VBE=0.6V and IC0=0. Calculate the
collector to emitter voltage VCE and also find the stability factor?
4. Determine the stability factor for the fixed bias circuit and compare its merits and demerits
with other biasing circuits
5. In a voltage divider bias circuit, VCC = 20 V and RC = 1.5 kΩ, the Q point is VCE = 8V and
IC = 4mA. Stability factor S = 12 and β = 50. Find R1, R2 and RE.
6. Draw the voltage divider bias circuit and derive the expression for the Q-point and stability
factor S. What are the limitations of this circuit?
7. Discuss the working principle and analyze the characteristics of a bipolar junction transistor
(BJT) in its common-emitter configuration.
8. Describe the differences between the common-emitter, common-base, and common-
collector configurations of a bipolar junction transistor (BJT).
9. Draw the circuit diagram for a common base circuit arrangement and plot its input and
Output characteristics. Show the different regions of the output characteristics and explain
their occurrence.
10. Discuss with neat diagrams, the Common Emitter Configuration and its input-output
characteristics.
11. Draw the circuit diagram for a common Collector circuit arrangement and plot its input and
Output characteristics. Show the different regions of the output characteristics and explain
their occurrence.
12. Determine whether or not the transistor in below circuit is in saturation. Assume β =50 and
VCE( sat) =0.3V, VBE =0.7V, VBB=2.5 V, VCC=10 V, RS=6.8 kΩ, RL=1 kΩ
13. For following circuit, calculate the minimum and maximum value of emitter current when β
of transistor varies from 75 to 150. Also calculate the corresponding values of collector to
emitter voltage. Take VBE = 0.3V, RB= 10 kΩ, RC= 50 kΩ, RE= 100 kΩ, VCC= 6V.

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