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2N6057

The document provides specifications for Darlington complementary silicon power transistors, including models 2N6050 to 2N6059. Key features include high DC current gain and maximum ratings for voltage, current, and power dissipation. It also outlines electrical characteristics, thermal characteristics, and dimensions for the transistors.

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arkanesshadowrun
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11 views

2N6057

The document provides specifications for Darlington complementary silicon power transistors, including models 2N6050 to 2N6059. Key features include high DC current gain and maximum ratings for voltage, current, and power dissipation. It also outlines electrical characteristics, thermal characteristics, and dimensions for the transistors.

Uploaded by

arkanesshadowrun
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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£s.m.i-don.au.ckoi LPioaucti, Line.

20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

DARLINGTON COMPLEMENTARY
PNP NPN
SILICON-POWER TRANSISTORS
2N6050 2N6057
...designed lor general-purpose power amplifier and low frequency 2N6051 2N6058
switching applications 2N6052 2N6059
FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain - DARLINGTON
hFE = 3500(typ)<&lc 12AMPERE
COMPLEMENTARY SILICON
MAXIMUM RATINGS POWER TRANSISTORS
60-100 VOLTS
Characteristic Symbol 2N6050 2N6051 Unit 150 WATTS
2N6052
2N6057 2N60S8 2N6059

Collector-Emitter Voltage VCEO 60 80 100 V

Collector-Base Voltage VCBO 60 80 100 V

Emitter-Base Voltage "no 5 V

Collector Current - Continuous 12 A


'c TO-3
-Peak 20

Base Current 'B 0.2 A

Total Power Dissipation©^ 25°C PO 150 W


Derated above 25°C 0.857 W/°C

Operating and Storage Junction L -T.TO °C


Temperature Range -65 to +200

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit


Thermal Resistance Junction to Case Rejc 1.17 "C/W
PIN 1.BASE
2-EM(TTER
COLLCCTOR4CASE)
FIGURE-1 POWER DERATING
175 MILLIMETERS
DM
MIN MAX
150
A 38.75 39.96
125 B 19.28 22.23
C 7.96 9.28
100 0 11.18 12.18
E 25.20 26.67
75
F 0.92 1.09
50 G 1.38 1.62
H 29.90 30,40
25 I 16.64 17.30
J 3.88 4.36
K 10.67 11.18
2S 50 75 100 125 150 175 200
T0 , TEMPERATURE(« C)

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice intbrmation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted )

Characteristic Symbol Win Max Untt

OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1) VCECMSU*) V
( I, = 100 mA, I. - 0 ) 2N6050, 2N60S7 60
2N6051, 2N6058 80
2N6052, 2N6059 100

Collector Cutoff Current 'CEO mA


( Vc, = 30 V, 1, = 0 ) 2N6050, ZN6057 1.0
(Ve, = 40V, l, = 0) 2N6051.2N605S 1.0
( VCB = 50 V, 1. = 0 ) 2N6052, 2N6059 1.0

Collector Cutoff Current 'CEX


mA
(VCB = Rated Vei0)ViI(^ = 1.5V) 0.5
( Vel = Rated VC10, V,^ =. 1 .5 V, Tc = 150°C ) 5.0

Emitter Cutoff Current 'EBO mA


(VEB = S.OV,I C = 0) 2.0

ON CHARACTERISTICS (1)
DC Current Gain hFE
(IC = 6.0AV CE = 3.0V) 750 18000
(IC = 12A,VCE = 3.0V) 100

Collector-Emitter Saturation Voltage VCE(»,, V


(IC = 6.0A, !B = 24mA) 2.0
(I C =12A IB = 120mA) 3.0

Base-Emitter On Voltage VBE(on)


V
(IC = 6.0AV CE = 3.0V) 2.8

Base-Emitter Saturation Voltage VBE(»«, V


(IC = 12A ! B =120mA) 4.0

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2) MHz
'T 4.0
( lc = 5.0 A VCE = 3.0 V, f = 1 .0 MHz )

Small-Signal Current Gain


{ lc = 5.0 A VCE a 3.0 V, f = 1.0 KHZ ) "• 300

(1) Pulse Test: Pulse width 5 300 us , Duty Cycle £ 2.0%

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