PolarTM Power MOSFET IXFK64N50P VDSS = 500V

HiPerFETTM IXFX64N50P ID25 = 64A

RDS(on) ≤ 85mΩΩ
trr ≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrisic Diode

Symbol Test Conditions Maximum Ratings

G
VDSS TJ = 25°C to 150°C 500 V D
S (TAB)
VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V
VGSS Continuous ±30 V PLUS247 (IXFX)
VGSM Transient ±40 V
ID25 TC = 25°C 64 A
IDM TC = 25°C, Pulse Width Limited by TJM 150 A
IA TC = 25°C 64 A
(TAB)
EAS TC = 25°C 2.5 J
G = Gate D = Drain
dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns S = Source TAB = Drain

PD TC = 25°C 830 W
TJ -55 ... +150 °C Features
TJM 150 °C
Tstg -55 ... +150 °C • International Standard Packages
• Fast Intrinsic Diode
TL 1.6mm (0.062 in.) from Case for 10s 300 °C • Avalanche Rated
TSOLD Plastic Body for 10s 260 °C • Low RDS(ON) and QG
Md Mounting Force (PLUS247) 20..120/4.5..27 N/lb. • Low Package Inductance
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
Advantages
Weight PLUS247 6 g
TO-264 10 g z
Easy to Mount
z
Space Savings
z
High Power Density

Applications

Symbol Test Conditions Characteristic Values • DC-DC Coverters

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. • Battery Chargers
• Switched-Mode and Resonant-Mode
BVDSS VGS = 0V, ID = 250μA 500 V Power Supplies
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V • DC Choppers
• AC and DC Motor Drives
IGSS VGS = ±30V, VDS = 0V ±200 nA • Uninterrupted Power Supplies
• High Speed Power Switching
IDSS VDS = VDSS, VGS= 0V 25 μA
Applications
TJ = 125°C 1 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 85 mΩ

© 2009 IXYS CORPORATION, All Rights Reserved DS99348F(5/09)

 IXFK64N50P
IXFX64N50P
Symbol Test Conditions Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 30 50 S
Ciss 9700 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 970 pF
Crss 30 pF
td(on) 30 ns
Resistive Switching Times
tr 25 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 85 ns
RG = 2Ω (External)
tf 22 ns
Qg(on) 150 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 50 nC
RthJC 0.15 °C/W
RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 64 A
ISM Repetitive, Pulse Width Limited by TJM 250 A
PLUS 247TM (IXFX) Outline
VSD IF = 64A, VGS = 0V, Note 1 1.5 V
trr IF = 25A, -di/dt = 100A/μs 200 nS
QRM 0.6 μC
VR = 100V, VGS = 0V
IRM 6.0 A

Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXFK64N50P
IXFX64N50P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
70 160
VGS = 10V VGS = 10V
8V 140 8V
60
7V
120
50

ID - Amperes
ID - Amperes

100
6V 7V
40
80
30
60

20 6V
40

5V
10 20 5V

0 0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 25 30

VDS - Volts VDS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 32A Value

@ 125ºC vs. Junction Temperature
70 3.2
VGS = 10V 3.0
VGS = 10V
60 8V 2.8
7V
2.6
RDS(on) - Normalized

50 2.4
6V
ID - Amperes

2.2 I D = 64A
40 2.0
I D = 32A
1.8
30 1.6
1.4
20 1.2
5V
1.0
10 0.8
0.6
0 0.4
0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 32A Value Fig. 6. Maximum Drain Current vs.
vs. Drain Current Case Temperature
3.4 70
3.2 VGS = 10V
3.0 TJ = 125ºC 60

2.8
50
RDS(on) - Normalized

2.6
ID - Amperes

2.4
40
2.2
2.0
30
1.8
1.6 20
1.4
TJ = 25ºC
1.2 10
1.0
0.8 0
0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150
ID - Amperes TC - Degrees Centigrade

© 2009 IXYS CORPORATION, All Rights Reserved

 IXFK64N50P
IXFX64N50P

Fig. 7. Input Admittance Fig. 8. Transconductance

90 90
TJ = - 40ºC
80 80

70 70

25ºC

g f s - Siemens
60 60
ID - Amperes

50 50
TJ = 125ºC 125ºC
40 25ºC 40
- 40ºC
30 30

20 20

10 10

0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 100 120 140
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
240 10

220 9 VDS = 250V

200 I D = 32A
8
I G = 10mA
180
7
160
IS - Amperes

VGS - Volts

140 6

120 5
100 4
80
TJ = 125ºC 3
60
2
40
TJ = 25ºC 1
20
0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 20 40 60 80 100 120 140 160
VSD - Volts QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Fig. 11. Capacitance Impedance
100,000 1.000
f = 1 MHz
Ciss
Capacitance - PicoFarads

10,000
Z(th)JC - ºC / W

1,000 0.100
Coss

100

Crss
10 0.010
0 5 10 15 20 25 30 35 40 1 10 100 1000
VDS - Volts Pulse Width - Second

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: F_64N50P(9J)4-27-09