Scribd
Upload
7 views

2SA1036

The document provides specifications for the 2SA1036 PNP Silicon General Purpose Transistor, including its electrical characteristics, maximum ratings, and package information. It is RoHS compliant and designed for low-voltage operation with a maximum collector current of -500 mA and a collector-emitter voltage of -32V. The document also includes details on the classification of hFE and characteristic curves.

Uploaded by

nikolay N
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
7 views

2SA1036

The document provides specifications for the 2SA1036 PNP Silicon General Purpose Transistor, including its electrical characteristics, maximum ratings, and package information. It is RoHS compliant and designed for low-voltage operation with a maximum collector current of -500 mA and a collector-emitter voltage of -32V. The document also includes details on the classification of hFE and characteristic curves.

Uploaded by

nikolay N
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

2SA1036

-0.5A, -40V
Elektronische Bauelemente PNP Silicon General Purpose Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen and lead free

FEATURES SOT-23
 IC Max.= -500 mA
A
 Low VCE(sat). Ideal for low-voltage operation. L
3
3

Top View C B
CLASSIFICATION OF hFE 1
1 2
Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R K E 2

Range 82~180 120~270 180~390


D
Marking HP HQ HR
F G H J

Millimeter Millimeter
REF. REF.
PACKAGE INFORMATION Min. Max. Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
SOT-23 3K 7’ inch E 1.78 2.04 L 0.89 1.02
F 0.30 0.50

Collector
3

1
Base

2
Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -32 V
Emitter to Base Voltage VEBO -5 V
Collector Currrent IC -500 mA
Total Power Dissipation PD 150 mW
Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V(BR)CBO -40 - - V IC=-100μA, IE=0
Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC=-1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO -5 - - V IE=-100μA, IC=0
Collector cut-off current ICBO - - -1 μA VCB=-20V, IE=0
Emitter cut-off current IEBO - - -1 μA VEB= -4V, IC=0
Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC=-100mA, IB=-10mA
DC current gain hFE 82 - 390 VCE=-3V, IC=-10mA
Transition frequency fT - 200 - MHz VCE=-5V, IC=-20mA, f=100MHz
Collector output capacitance COB - 7 - pF VCB=-10V, IE=0, f=1MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Dec-2010 Rev. B Page 1 of 2


2SA1036
-0.5A, -40V
Elektronische Bauelemente PNP Silicon General Purpose Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

31-Dec-2010 Rev. B Page 2 of 2

You might also like