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This lecture discusses the basic configurations of MOSFET amplifiers, focusing on the Common-Source (CS), Common-Gate (CG), and Common-Drain (CD) amplifiers. It details the analysis of the CS amplifier's parameters such as input resistance, output resistance, and voltage gain, as well as the impact of source resistance on performance. The CD amplifier is highlighted for its use as a voltage buffer, demonstrating how it maintains signal integrity while connecting to loads.

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Areeb Ashraf
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0% found this document useful (0 votes)
20 views19 pages

lecture7b_articleBeamer

This lecture discusses the basic configurations of MOSFET amplifiers, focusing on the Common-Source (CS), Common-Gate (CG), and Common-Drain (CD) amplifiers. It details the analysis of the CS amplifier's parameters such as input resistance, output resistance, and voltage gain, as well as the impact of source resistance on performance. The CD amplifier is highlighted for its use as a voltage buffer, demonstrating how it maintains signal integrity while connecting to loads.

Uploaded by

Areeb Ashraf
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Lecture 7b

EE-215 Electronic Devices and Circuits


Dr. Muhammad Anis Chaudhary

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier

• is the most widely used MOS amplifier configuration

• Note that, here the biasing arrangement is not shown (the circuit in fig is the ac equivalent
circuit)

• the signal source has an internal resistance of Rsig and open circuit voltage of vsig

• let’s analyze this circuit to determine Rin , Avo , Ro and Gv

• Note that RD is part of the amplifier circuit, and when a load resistance RL is connected

– to the amplifier output, it appears in parallel with RD

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier

• replacing MOSFET with its hybrid-π model

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 1 of 19

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier

• this equivalent circuit can be used to determine the characteristic parameters (Rin , Avo , Ro ) of
the amplifier

• from the fig

– as gate current is zero =⇒ input resistance = Rin = ∞


vo
• by KCL =⇒ gm vgs + ro ∥R D
=0

vo
– vo = −gm vgs (ro ∥ RD ) =⇒ vgs = −gm (ro ∥ RD )

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 2 of 19
Basic MOSFET Amplifier Configurations
The Common-Source (CS) Amplifier


vo
• vgs = −gm (ro ∥ RD )

vo vo
• here vi = vgs =⇒ Avo = vi R =∞ = vgs R =∞ = −gm (ro ∥ RD )
L L

• if the channel length modulation can be ignored ro → ∞ (ro ≫ RD )

– =⇒ Avo ≈ −gm RD

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier

• Now the output resistance Ro is the resistance seen looking into the output terminal with vi set
to zero

– vi = 0 =⇒ vgs = 0 =⇒ gm vgs = 0
– =⇒ Ro = RD ∥ ro

• thus for CS amplfier

– Rin = ∞ , Ro = RD ∥ ro , Avo = −gm (RD ∥ ro )

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 3 of 19
Basic MOSFET Amplifier Configurations
The Common-Source (CS) Amplifier

• now the overall voltage gain Gv can be determined as follows


vo
– Gv = vsig

• As Rin = ∞ =⇒ vsig = vi = vgs


vo vo
• =⇒ Gv = vsig = vi = Av

• Note that Av , Gv are calculated with load resistor RL connected =⇒ vo = (−gm vgs ) (RD ∥ ro ∥ RL )
vo vo
– vgs = −gm (RD ∥ ro ∥ RL ) = vi = Gv = Av ∵vi = vgs

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance

• here we have placed a resistance Rs in the source lead of the common-source amplifier

• Assuming λ = 0 i.e. ignoring channel length modulation

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 4 of 19
Basic MOSFET Amplifier Configurations
The Common-Source (CS) Amplifier with a Source Resistance

• the small-signal equivalent circuit can be drawn as (for λ = 0)

• here T-model is preferred over the π model, because it makes the analysis somewhat simple

• In general, whenever a resistance is connected in the source lead, the T model is preferred.

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance

• As a consequence of the T-model, Rs appears in series with the resistance 1/gm

• as gate current is zero =⇒ Rin = ∞ =⇒ vi = vsig

• here only a fraction of vi appears between gate and source as vgs


(1/gm ) 1
• by voltage divider =⇒ vgs = (1/gm )+Rs vi = 1+gm Rs vi

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 5 of 19
Basic MOSFET Amplifier Configurations
The Common-Source (CS) Amplifier with a Source Resistance


(1/gm ) 1
• vgs = (1/gm )+Rs vi = 1+gm Rs vi

– thus the value of Rs can be used to control the magnitude of the signal vgs
– and thereby ensure that vgs doesnot become too large to cause
– unacceptably high non-linear distortion

• Another benefit is that Rs extends the useful bandwidth of the amplifier

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance
• by ohm’s law,

– vo = −iRD

• As 1/gm and Rs are in series, the current i in the source lead can be given as
 
– i = 1/gmvi+Rs = 1+ggmm Rs vi
 
gm
• =⇒ vo = −iRD = − 1+gm Rs vi RD

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 6 of 19
 
vo gm −gm RD
• the voltage gain, Avo = vi R =∞ =− 1+gm Rs RD = 1+gm Rs
L

• =⇒ the resistance Rs reduces the voltage gain by the factor (1 + gm Rs )

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance
gm RD
• Avo = − 1+g m Rs

• divide numerator and denominator by gm on R.H.S


RD
• Avo = − 1
gm +Rs

• =⇒ the voltage gain between gate and the drain is equal to the ratio of the total resistance in
the drain (RD ) to the total resistance in the source ( g1m + Rs )


Total Resistance in drain RD
• i.e. Voltage gain f rom gateto drain = − Total Resistance in source = − 1
gm +Rs

RD
• Note that setting Rs = 0 gives Avo of the CS amp= − (1/gm)

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance

• the output resistance Ro can be determined by placing a test source at the drain

– and by setting vi = 0 =⇒ vgs = 0 =⇒ i = gm vgs = 0

• i = 0 =⇒ Ro = RD

• now when RL is connected at the output, Av can be given as

– Av = Avo RLR+R
L
o

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 7 of 19
gm RD
• As Avo = − 1+g m Rs
, Ro = RD


 
gm RD
• =⇒ Av = Avo RLR+R
L
o
= − 1+gm Rs RLR+R
L
D

Basic MOSFET Amplifier Configurations


The Common-Source (CS) Amplifier with a Source Resistance
   
gm RD gm
• Av = − 1+gm Rs RL +RD = − 1+gm Rs RRLD+R
RL RL
D

  
(RD ∥RL )
gm
• Av = − 1+gm Rs 1
1
+ R1
= − gm1+g m Rs
RD L

RD ∥RL
• Av = − (1/gm )+Rs

• Note that −Av is the ratio of the total resistance in drain to the total resistance in source
• As Rin is infinite =⇒ vi = vsig


vo vo
• and the overall voltage gain is Gv = vsig = vi = Av

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 8 of 19
Basic MOSFET Amplifier Configurations
The Common-Gate (CG) Amplifier

Basic MOSFET Amplifier Configurations


The Common-Gate (CG) Amplifier
• here common-gate amplifier is shown
• Note that the biasing circuit is not shown in figure
• the amplifier is fed with a signal source characterized by vsig and Rsig
• Note that Rsig appears in series with the source

– =⇒ it is more convenient to use the T model rather than the π model

Basic MOSFET Amplifier Configurations


The Common-Gate (CG) Amplifier


• here channel length modulation is ignored

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 9 of 19
Basic MOSFET Amplifier Configurations
The Common-Gate (CG) Amplifier
1
• the input resistance Rin can be given as Rin = gm

– as Rin is the resistance looking into the source and the gate is grounded

• typically 1/gm is a few hundred ohms

– =⇒ the CG amplifier has a low input resistance

• by ohm’s law

– vo = (−i) RD ,
– where i is also the source current
0−vi
– i.e. i = 1/gm = −vi gm


vo RD
• =⇒ vo = vi gm RD =⇒ Avo = vi = gm RD = 1/gm

Basic MOSFET Amplifier Configurations


The Common-Gate (CG) Amplifier

• The output resistancee of the CG amplifier is

– Ro = RD

• the gain Av is
vo
– Av = vi = gm (RD ∥ RL )
– ∵ Avo = gm RD and as RL is in parallel with RD

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 10 of 19

Basic MOSFET Amplifier Configurations


The Common-Gate (CG) Amplifier

• To determine the overall gain Gv

• first by voltage divider


(1/gm ) Rin
• vi = (1/gm )+Rsig vsig = Rin +Rsig vsig

vo vo vi
• Gv = vsig = vi vsig

vo vi (1/gm )
– Gv = vi vsig = Av vvsigi = Av (1/g m )+Rsig

• ∵ Av = gm (RD ∥ RL )
(1/gm )
– Gv = gm (RD ∥ RL ) (1/g m )+Rsig

RD ∥RL
– Gv = (1/gm )+Rsig

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 11 of 19
Basic MOSFET Amplifier Configurations
The Common-Gate (CG) Amplifier
RD ∥RL
• Gv = (1/gm )+Rsig

• Note that the overall voltage gain is simply the ratio of

– the total resistance in the drain circuit


– to the total resistance in the source circuit

• CG amplifier has excellent frequency response and can be used to

– amplify high-frequency signals that originate from sources


– with relatively low resistances

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower

• The common-drain amplifier is more commonly known as the source follower

• A common application of a CD amplifier is as a voltage buffer

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower
The need for Voltage Buffers

• consider the situation shown in fig

• here a signal source with open-circuit voltage of vsig = 1V peak

– and internal resistance of 1MΩ is to be connected to a 1kΩ load resistance

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 12 of 19
Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower
The need for Voltage Buffers

• connecting the source to the load directly will result in

– severe attenuation of the signal


– i.e. the voltage appearing accross the load is
RL 1k
– vo = RL +Rsig vsig = 1k+1M vsig

1k
• As vsig = 1V =⇒ vo = 1k+1M vsig = 0.999mV ≈ 1mV

• thus for vsig = 1V peak , output voltage is only vo = 1mV peak

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower
The need for Voltage Buffers

• now suppose, we have an amplifier as shown in fig

• this amplifier is used to connect the source to the load

• this amplifier has a unity voltage gain

– (here our signal is already of sufficient strength and increase in its amplitude is not re-
quired)

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 13 of 19
Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower
The need for Voltage Buffers

• this amplifier has a very large input resistance (Rin is very large)

– =⇒ vi ≈ vsig

• the amplifier has an output resistance of

– Ro = 100Ω

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower
The need for Voltage Buffers

• here Ro = 100Ω , RL = 1kΩ , vi ≈ vsig , Avo = 1

• by voltage divider
RL 1k
– vo = RL +Ro Avo vi = 1k+100 (1) vsig = 0.9V

• =⇒ 90% of the input signal appears at the output

• such an amplifier circuit with Avo = 1 , Rin → ∞ and Rout → 0 is called a voltage buffer

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 14 of 19
Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower

• The source follower can be used to implement the unity gain buffer amplifier

• the CD amplifier with the bias circuit omitted is shown here


• a signal generator (vsig , Rsig ) is applied between the gate and ground
• a load resistance RL is connected between the source terminal and ground

• As RL is connected to the source terminal, it is more convenient to use the T-model rather that
the hybrid-π model

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower

• here ro appears in parallel with RL . so channel length modulation effect can easily be incorpo-
rated.

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 15 of 19
Basic MOSFET Amplifier Configurations
The Common-Drain Amplifier or Source Follower

• if we ignore channel length modulation =⇒ ro = ∞

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower

• from figure

– Rin = ∞
– as no current flows in to the gate terminal

• =⇒ vi = vsig

• by voltage divider
vo RL
– vi = RL +(1/gm ) = Av

• and Avo can be given as

vo RL
– Avo = vi R =∞ = RL +(1/gm ) R =∞
L L

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 16 of 19

1 1
• Avo = 1+ g1m 1 = 1+0 =1
RL RL =∞

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower

• the output resistance Ro is determined by setting vi = 0 and RL = ∞

– =⇒ vi = 0 =⇒ the gate terminal is grounded


1
– =⇒ Ro = gm

vo vo
• Gv = vsig = vi ∵ vi = vsig because of infinite Rin

vo RL
– Gv = vi = Av = RL +(1/gm )
– thus Gv will be lower than unity

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 17 of 19

• however, as 1/gm is usually a small value

– =⇒ voltage gain will be close to unity i.e Gv = Av ≈ 1

Basic MOSFET Amplifier Configurations


The Common-Drain Amplifier or Source Follower
vo
• Gv = vi = Av ≈ 1 and Avo = 1
• =⇒ the voltage at the source terminal will follow that at the input, hence the name source
follower


1
• thus the source follower has Rin = ∞ , Ro = gm (a small value) and Avo = 1, Av = Gv ≈ 1
• =⇒ the source follower is ideally suited for implementing the unity gain voltage buffer.

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 18 of 19
Basic MOSFET Amplifier Configurations

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7b Page 19 of 19

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