preport
preport
REPORT 01
OVERVIEW– RECTIFIERS & REGULATORS – BJT & FET
AMPLIFIER
Name ID
Nguyễn Ngọc Hưng 21200098
Nguyễn Huỳnh Minh Trí 21200242
Nguyễn Tiến Thắng 21200214
1.
Compare BJT and FET
+BJT :
-BJT stands for bipolar transistor, so it is a bipolar device
-BJT has three pins: base, emitter and collector
-BJT operation mainly depends on majority as well as minority carriers
-BJT input impedance ranges from 1K to 3K, very small
-BJT is a current control device
-BJT has noise
-The frequency variation of the BJT will affect its performance
-Depends on temperature
-Cheap
-Bigger size
-With offset voltage
-More gain
-High output impedance due to high gain
-Compared with emitter, both BJT poles are base and collector are more positive.
-The base is negative relative to the emitter.
-Has high voltage gain
1
-Has low current gain
-BJT conversion time is average
-Simple BJT polarization
-BJT uses less current
-BJT is suitable for low current application
-High Power Consumption BJT
-BJT has a negative temperature coefficient
FET:
-FET stands for field transistor, so it is unipolar transistor
- The FET has three pins: drain, source and gate
-The operation of the FET mainly depends on the charge carriers that are mostly holes or
electrons
-The input impedance of the FET is very large
-FET is a voltage controlled device
-Low noise FET
-High frequency response
-Better thermal stability
-Expensive
-Less
-No offset voltage
-Less gain
-Low output impedance due to low gain
-The drain terminal is positive and the gate terminal is negative relative to the source terminal.
-The gate pole is more negative with respect to the source pole.
-Low voltage gain
-High current gain
-Fast FET switching time
-FET polarization is difficult
2
-FETs use less voltage
-FETs suitable for low voltage applications
-Low Power Consumption FET
-FET has a positive temperature coefficient
3
-AC BJT analysis is used to calculate the operating parameters of a transistor under input
signal conditions. AC BJT analysis helps determine important parameters such as amplification
factor, cutoff frequency, and distortion.
Through AC BJT analysis, we can calculate important parameters of the transistor such as
amplification factor, cutoff frequency, and distortion. These parameters are crucial in circuit
design and ensure that the transistor works in the linear region and provides the desired
amplification.
In addition, AC BJT analysis also helps determine the parameters of other components in the
circuit, such as resistors and power supplies. Calculating these parameters helps design the
transistor circuit for optimal performance and meet the requirements of the application.
In summary, AC BJT analysis is an important tool in transistor circuit design and helps
determine the important parameters of the transistor and other components in the circuit.
(
V LDC =V p 1−
0,005
4 RL C) (
=150 1−
0,005
4.4 .103 .500.10−6 )
=149,625V
V LDC 149,625
I LDC = = 3 = 37.4 mA
RL 4 × 10
b. When adding capacitor, V LDC and I LDC all increase.
Calculate ripple voltage:
4
VP 150
V rp= = = 0.375 V
4 f R L C 4.50 .4 .103 . 500.10−6
5
Output waveform:
No filter capacitor:
6
- Capacitor filter is responsible for charging commune to reduce ripple.
- Voltage stabilizer: Including Transistor (Q1), Zener is responsible for keeping the
output voltage stable:
+ The Zener diode is responsible for providing the reference source:
If V0 said then Q1's emitter voltage increases, Q1 conducts more keeping the output constant.
If V0 increases, the output voltage of Q1 represents, Q1 conducts less and keeps the output
constant.
b. Determine the value of I1, IL, IB and IZ, VLDC . How does the Zener diode work?
Give comment.Respectively change the load value 22Ω, 56Ω, 100Ω, 330Ω. Recalculate the
above values. Which load does the regulator work well or unwell with.
V LDC =V Z −V BE =6.7−0.7=6(V )
V iDC−V Z 10−6.7
I 1= = =0.33 ( A )
R1 10
V LDC 6
I L= = =0.6 ( A )
RL 10
IL 0.6 −3
I B= = =7.4 ×10 ( A )
b+ 1 80+1
IL −3
I Z =I 1− =0.33−7.4 ×10 =0.3226 ( A )
b+1
With RL= 22W
V LDC =6 (V )
I 1=0.33 ( A )
V LDC 6
I L= = =0.2727 ( A )
RL 22
I L 0.2727 −3
I B= = =3.36 ×10 ( A )
b+ 1 80+1
IL −3
I Z =I 1− =0.33−3.36 ×10 =0.32664 (A )
b+1
With RL= 56W
7
V LDC =6 (V )
I 1=0.33 ( A )
V LDC 6
I L= = =0.1071 ( A )
RL 56
I L 0.1071 −3
I B= = =1.32 ×10 ( A )
b+ 1 80+1
IL −3
I Z =I 1− =0.33−1.32× 10 =0.32868( A)
b+1
With RL= 100W
V LDC =6 (V )
I 1=0.33 ( A )
V LDC 6
I L= = =0.06 ( A )
RL 100
IL 0.06 −4
I B= = =7.4 ×10 ( A )
b+ 1 80+1
IL −4
I Z =I 1− =0.33−7.4 ×10 =0.32926( A)
b+1
With RL= 330W
V LDC =6 (V )
I 1=0.33 ( A )
V LDC 6
I L= = =0.0181 ( A )
RL 330
I L 0.0181 −4
I B= = =2.23 ×10 ( A )
b+ 1 80+1
IL −4
I Z =I 1− =0.33−2.23 ×10 =0.33 (A )
b+1
c. Do simulation using Proteus. Perform the output waveform. Define the value and
calculate directly using simulation tool - ViDC, VLDC, I1, IL, IB and IZ.
8
Prob 4: Small signal amplifier circuit using BJT
a. the operating static point Q (V CE, V BE, IC ).
R1 R2 10∗5.6
Rtđ = = =3.58(kW )
R 1+ R 2 10+5.6
R2 5∗5.6
Etđ =V cc = =1.79 (V )
R 1+ R 2 10+5.6
E tđ −V BE 1.79−0.7
I B= = =0.0104 ( mA )
Rtđ + ( b+1 ) R E 3.58+101∗1
I C =b∗I B=100∗0.0104=1.04 ( mA )
9
V B=V BE +V E =0.7+1.0504=1.7504 (V )
V C =V CC−RC I C =5−1.5∗1.04=3.44 ( V )
V CE =V C −V E =3.44−1.0504=2.3896(V )
Q : I B=0.0104 mA , I C =1.04 mA ,V CE=2.3896 V
100∗26
hie =b r e = =2475.24 ( W )=2.475(kW )
IE
3.58∗2.475
Input impedance: Zi =Rtđ ∨¿ hie= =1.463(kW )
3.58+2.475
Output impedance: ZO =RC =1.5(kW )
v0
Potential gain: A v =
vi
v o=−h fe i b RC =−100∗0.0104∗1.5=−1.56 (V )
v i=hie i b=2.475∗0.0104=0.025(V )
−1.56
¿> A v = =−62.4
0.025
Current amplification factor:
hfe Rtđ 100∗3.58
Ai= = =59.12
Rtđ + hie 3.58+2.475
10
Output impedance: ZO =RC =1.5(kW )
[ 2.475+101 ]∗2.475
Input impedance: Zi =Rtđ ∨¿[hie + ( hfe +1 ) R E ]= =2.417 (kW )
[ 2.475+101 ] +2.475
v0
Potential gain: A v =
vi
v o=−h fe i b RC =−100∗0.0104∗1.5=−1.56 (V )
−1.56
¿> A v = =−1.449
1.076
Current amplification factor:
hfe Rtđ 100∗3.58
Ai= = =3.344
Rtđ +[hie + ( hfe +1 ) R E ] 3.58+ [ 2.475+101 ]
11
Use a wave generator (sine wave signal to Vin with arbitrary amplitude, frequency 𝑓 =1
𝐾𝐻𝑧 ) and an oscilloscope to observe the input and output waveforms and determine the
advantage.
A v =−61.3
12
Review, compare, comment and evaluate the simulation results using the software
compared with the theoretical results in the above sentences as well as the actual practice
results in the internship session.
The results of the simulation and the theory of the experiment are relatively similar, the
difference is small.
Prob 5: Small signal amplifier circuit using FET
a. Calculate V GS , V DS , line I ID :
:
V GS=−R S I D =−2.5 I D ( 1 )
( ( )) ( )
2 2
V GS V
I D =I DSS 1− =2 1+ GS ( 2 )
V GSoff 2.3
( )
2
2.5 I D
I D =2 1− =¿ I D =0.4727 ( mA )
2.3
b. Draw the parameter equivalent circuit in AC mode with small signal. Calculate , _
_ o , 𝐴𝑣 .
13
Zi =RG=1 ( MW )
ZO =R D=2.2 ( kW )
| |(
2 I DSS
)|
V GS
|( )
−3
4 × 10 −1.181 −4
gm = 1− = 1− =8.461 ×10
V GSoff V GSoff −2.3 −2.3
−4 3
A v =−gm RD =−8.461 ×10 ×2.2 ×10 =−1.861
Zi =RG=1 ( MW )
ZO =R D=2.2 ( kW )
14
A v =−gm ¿
A v =−1.760
Use a wave generator (sine wave signal to Vin with arbitrary amplitude, frequency 𝑓 =1
𝐾𝐻𝑧 ) and an oscilloscope to observe the input and output waveforms and determine the
advantage.
15
Review, compare, comment and evaluate the simulation results using the software
compared with the theoretical results in the above sentences as well as the actual practice
results in the internship session.
The results of the simulation and the theory of the experiment are relatively similar, the
difference is small.
END
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