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Chapter-6 _ Receiver

The document discusses optical receivers, focusing on their function to convert optical signals into electrical signals using photo-detectors. It highlights the characteristics of photo-detectors, the differences between p-n and p-i-n photodiodes, and the advantages of avalanche photodiodes (APDs) for achieving higher responsivity and bandwidth. Additionally, it addresses the factors affecting performance, such as transit time and receiver noise.

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0% found this document useful (0 votes)
8 views17 pages

Chapter-6 _ Receiver

The document discusses optical receivers, focusing on their function to convert optical signals into electrical signals using photo-detectors. It highlights the characteristics of photo-detectors, the differences between p-n and p-i-n photodiodes, and the advantages of avalanche photodiodes (APDs) for achieving higher responsivity and bandwidth. Additionally, it addresses the factors affecting performance, such as transit time and receiver noise.

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istiahmed07
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We take content rights seriously. If you suspect this is your content, claim it here.
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Optical Receivers

Md. Shamsul Arefin


Lecturer, Department of EEE
 Optical Receiver converts the optical signal back into electrical form and
retrieve the data/intelligence signal transmitted through fiber-optic
transmission system.

 Main element is Photo-detector : basic mechanism is Optical Absorption.

 The required characteristics of Photo-detector:


▪ High sensitivity
▪ Fast response
▪ Low noise
▪ High reliability (high efficiency with required BW)
▪ Compact size
▪ And low cost etc.
 If light energy hν>Eg, an
EHP (Elecron-hole pair) is
generated by absorbing the
photon.
 Under influence of an
Electric field applying with
a voltage, electrons and
holes are swept across the
semiconductor causing a
flow of electric current.
 This is photocurrent which
is directly proportional to
the incident optical power
Pin.
 Here, R is responsivity of
photodetector (A/W)
For a semiconductor slab of width 6 micro meter, the inpurt power is given as 1 mW. The absorbtion
coefficient is given as 0.006. What is the transmitted power. What is the absorbed power. What is
the quantum efficiency .
▪ R of photo-detector increases with λ (as more
photons are present for the same optical power)

▪ However, with increase of λ, photon energy


decreases gradually, and at a certain point photon
energy becomes too small to generate electrons,
hν<Eg then η drops to zero, at that point, λ is cut-off
wavelength,
If the facets of the semiconductor slab are assumed to have an
antireflection coating, the power transmitted through the slab
of width W

Where α is absorption coefficient


Photo Detector
 A p-n junction under reverse bias is commonly used in practice as PD. The
current produced is known as photocurrent.
BW depends on speed with which PD responds to variations of incident optical power

– Rise time, Tr, the time over which the current builds up from 10% to 90% of its final
value when incident power is changed rapidly , or electrons and holes to travel to the
electrical contacts
– It also depends on response time of electrical circuit to process the photocurrent

τtr is transit time, it is the time required


for the carriers to be collected after their
generation through absorption of photons
and τRC is RC time constant of equivalent
RC ckt.
p-i-n Photodiode
The depletion region can be increased by inserting a layer of undoped or
lightly doped semiconductor material between the p-n junction. Since the middle
layer consists of intrinsic material, this PD structure is called p-i-n photodiode.

The main difference between p-n PD and


p-i-n PD is the drift component of
photocurrent which dominates over diffusion
component in p-i-n structure as most of the
incident optical power is absorbed inside the
i-region (depletion region).
p-i-n Photodiode
How to control W?

Optimum value of W depends on a compromise between speed and sensitivity

❖ R can be increased by increasing W, so η can be increased


❖ But τtr will be increased with W, Consequently BW will decrease.

For indirect band gap material (Si, Ge), W~20-50 μm, BW limited by long τtr > 200 ps
For direct band gap material (InGaAs), W~3-5 μm, BW enhanced by small τtr ~ 10 ps

•The performance of p-i-n PD can be improved by using a double heterostructure design.

•The semiconductor material for middle i-layer is different from p-and n-layers, and its band gap is
chosen such that light is absorbed only in the i-layer.
Avalanche Photodiode (APD)
The limitation of p-i-n Photo-diode: The BW of p-i-n PD can be increased by decreasing
W, but R decreases as η decreases. or R can be increased but at the cost of BW

APD is designed to achieve much larger η and hence R maintaining larger BW


•PDs with larger R are preferred as they require less optical power
•Maximum value of R attainable from p-i-n PD is R=q/hν, as η= 1. APD can provide much
larger R than that.

How?

❑By providing very high electric field inside the device


❑Internal current gain which is known as impact ionization is achieved
❑Ip will be increased
Avalanche Photodiode (APD)
➢ Under high electric field, an accelerated electron produced by photon absorption can
acquire sufficient energy to generate a new EHP. The energetic electron gives a part of its
kinetic energy to another electron in the VB that ends up to CB, leaving behind a hole.
Valence Band Conduction Band

➢ The net result of impact ionization is that a single primary electron, generated through
absorption of a photon, creates many secondary electrons and holes.

Responsivity of APD:

Limiting Factors:

• Transit time of carriers across the absorption


region
• Time taken by the carriers to cause avalanche
multiplication
• RC time constant
+ve/-ve of APD
Receiver Noise:

Shot Noise is a manifestation of the fact that – an electric current consists


of electrons that are generated at random times
Thermal
Noise
For APD Receiver
Thanks

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