UNISONIC TECHNOLOGIES CO.

, LTD
75N75 Power MOSFET

80A, 75V N-CHANNEL

POWER MOSFET
1 1

TO-220 TO-220F
 DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and 1 1
computer application.
TO-220F1 TO-220F2
 FEATURES
* RDS(ON)=11mΩ @VGS=10V, ID=40A
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability 1
* Low reverse transfer Capacitance (CRSS= typical 240 pF ) TO-263
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
75N75L-TA3-T 75N75G-TA3-T TO-220 G D S Tube
75N75L-TF1-T 75N75G-TF1-T TO-220F1 G D S Tube
75N75L-TF2-T 75N75G-TF2-T TO-220F2 G D S Tube
75N75L-TF3-T 75N75G-TF3-T TO-220F G D S Tube
75N75L-TQ2-T 75N75G-TQ2-T TO-263 G D S Tube
75N75L-TQ2-R 75N75G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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75N75 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current TC = 25°C ID 80 A
Pulsed Drain Current (Note 2) IDM 320 A
Single Pulsed Avalanche Energy (Note 3) EAS 700 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns
TO-220/TO-263 300 W
Power Dissipation TO-220F/ TO-220F1 PD 48 W
TO-220F2 50 W
Junction Temperature TJ +175 °C
Storage Temperature TSTG -55 ~ +175 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=40A, VDD=37.5V
4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
TO-220/TO-263 0.5 °C/W
Junction to Case TO-220F/ TO-220F1 θJC 2.6 °C/W
TO-220F2 2.5 °C/W

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75N75 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 75 V
Drain-Source Leakage Current IDSS VDS = 75 V, VGS = 0 V 1 µA
Forward VGS = 20V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -20V, VDS = 0 V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 40 A 9.5 11 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 3700 pF
VGS = 0 V, VDS = 25 V
Output Capacitance COSS 773 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 86 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 133 150 ns
Turn-On Rise Time tR VDD = 37.5V, ID =45A, 208 232 ns
Turn-Off Delay Time tD(OFF) VGS=10V, RG=4.7Ω 354 370 ns
Turn-Off Fall Time tF 246 260 ns
Total Gate Charge QG 430 440 nC
VDS = 60V, VGS = 10 V
Gate-Source Charge QGS 70 nC
ID = 80A
Gate-Drain Charge QGD 102 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0 V, IS = 80A 1.5 V
Continuous Source Current IS 80 A
Pulsed Source Current (Note 1) ISM 320 A
Reverse Recovery Time tRR IS = 80A, VDD = 25 V 132 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/µs 660 µC
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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75N75 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VD
S

-
+

- L

RG
Drive VDD
r * dv/dt controlled by RG
Same * ISD controlled by pulse period
VGS * D.U.T.-Device Under Test
Type as
D.U.T.

1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS=10V

IFM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

1B Peak Diode Recovery dv/dt Waveforms

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75N75 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS (Cont.)

2A Switching Test Circuit 2B Switching Waveforms

3A Gate Charge Test Circuit 3B Gate Charge Waveform

4A Unclamped Inductive Switching Test Circuit 4B Unclamped Inductive Switching Waveforms

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75N75 Power MOSFET

 TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 450
400
250
350
Drain Current, ID (µA)

Drain Current, ID (µA)

200 300

250
150
200
100 150
100
50
50
0 0
0 0.5 1 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100
Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS(V)

Drain-Source On-State Resistance

Characteristics Drain Current vs. Source to Drain Voltage
2 12
1.8
10
1.6
Drain Current, ID (A)

Drain Current, ID (A)

1.4 VGS=10V VGS=10V 8

1.2 ID=1A ID=20A

1 6
0.8
4
0.6
0.4
2
0.2
0 0
0 50 100 150 200 0 0.2 0.4 0.6 0.8 1.0
Drain to Source Voltage, VDS (mV) Source to Drain Voltage, VSD (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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