April2020
April2020
continuity; i.e., the patches are connected without gaps and seams. methods (fig. S3). Figure S3A shows the “steepest edge (SE) unfolding”
The computer science community has recently exerted great efforts (16). Given a polyhedron P and a 3D vector c →, SE unfolding associ-
< c, v − w >
to algorithmically determine surface cuts that segment a nondevel- ates each edge e = (v, w) of P with a weight _ ∣ v−w ∣
, where v and
opable surface into developable surface patches called polyhedral w are the end points of e and <, > denotes the inner product between
nets (or simply nets) (16–18). Beyond designing valid nets, recent two vectors. Then, for each vertex v, the edge incident to v with the
computational methods, including those developed by the authors largest weight, i.e., the edge most aligned with c→, is cut. The SE un-
(19–22), have focused on optimizing net quality and foldability using folding can unfold nearly all convex polyhedra with a few randomly
machine learning techniques that drastically reduce the time and selected c→, creating radially spread unfolded figures. Other methods,
effort needed relative to traditional trial-and-error approaches. such as flat-tree unfolding (fig. S3B) (16) and genetic algorithm (GA)
A polyhedron can have multiple possible polyhedral nets (23), methods (22, 24), are also available to unfold nonconvex polyhedra
especially when the polyhedron is convex. For a given polyhedral (fig. S3C). As it is critically important that a conformal device is
sphere, we demonstrate six unfoldings created by six different composed of one or as few pieces as possible, our recently developed
GA method can evolve the unfoldings by mutating the edge weights can be enclosed by a developable surface; however, there will always
until a net with zero overlaps is found (22). This evolution is con- be spaces between these two surfaces. To control the size of this
trolled by a fitness function f : N → ℝ that evaluates an unfolding. space, we adaptively refine the facet mesh until the two-sided Hausdorff
An example of f(N) is defined as follows distance between the developable surface formed by the polyhedral
net and the wrapped object is bounded. More specifically, we mod-
f(N) = − ( 0 0 + 1 1)
ify the GA fitness function in our edge unfolding method as follows
developable nets with different numbers of meshes are generated increases from 50, 100, 200, to 400. Consequently, the highest value
by the GA method, and the computational models for the FE sim- of the maximum in-plane principal stress in Fig. 3E decreases from
ulation are constructed with adaptive meshing (Fig. 3B). 624 MPa for 50 meshes to 193 MPa for 400 meshes. These stress
Figure 3C shows that for the 20-m-thick Si wafer wrapping values are much smaller than the fracture strength of the Si wafer,
the part of the sphere, the maximum in-plane principal stress dis- which is approximately 5 GPa (25, 26). This finding clearly indi-
tribution indicates that the stress decreases as the number of meshes cates that by maximizing f(N), the bending angles of the strips are
Fig. 3. FE analysis. The mechanical reliability of the computational wrapping of the Si wafer shown in Fig. 2F is further investigated through FE simulations for wrapping
a part of a sphere. (A) The wrapping process is simulated by compressing the 2D nonpolyhedral developable net between the sphere and a concave mold of a wrapped
part of the sphere (see also movie S2). The radius of the sphere in the FE simulation is identical to that used in our experiment (Fig. 2F). (B) The nonpolyhedral developable
nets are generated by the GA method. The distributions of the maximum in-plane principal stress for the wrapped Si wafers are analyzed (C) with respect to the number
of meshes at a fixed thickness of 20 m and (D) with respect to the thickness at 400 meshes. Consequently, the maximum in-plane principal stress decreases as the number
of meshes increases and increases as the thickness increases (E and F). In both cases, the maximum stress values are much smaller than the fracture strength of the Si wafer.
minimized to ensure minimal stress and strain, thereby preventing thicknesses (20, 50, 100, and 125 m), and the results are shown
the occurrence of fracture or severe plastic deformation. We in Fig. 3D. The residual stress is developed throughout the devel-
also simulated the maximum in-plane principal stress distri- opable net as the thickness increases to 125 m. The highest value
bution in the wrapped Si wafer with 400 meshes under various of the maximum in-plane principal stress is 1.093 GPa, which is
still less than the fracture strength of the Si wafer (see fig. S5 for an shape without forming crease lines between adjacent facets. Con-
additional FE analysis of a stainless steel sheet). sequently, stiff or even brittle materials, such as metal sheets or Si
The above results have significant practical implications. Most wafers, can fully cover and tightly wrap nonzero Gaussian curvature
flexible devices are made from 2D brittle substrate materials that surfaces without catastrophic fractures. We demonstrated that the
can be slightly bent at a small angle only if the aspect ratio is suffi- advantages of wrapping over folding can be applied to make real
ciently large (27). As long as we can make 2D unfolding structures, conformal devices from conventional devices, such as EL lighting
we can use conventional materials and processes, such as deposition devices and batteries. Our universal computational wrapping method
and evaporation to wrap a curved surface with a conformal device. provides new insights into the development of conformal devices
Hence, these structures lead to a significant increase in the applica- with arbitrary shapes using efficient algorithms with robust and re-
bility of computational origami to real industrial fabrication pro- liable conventional fabrication processes.
cesses, wherein wrapping can be used instead of folding to fabricate
conformal devices. For instance, in this study, we realize a confor-
mal device using commercial electroluminescent lamp (EL) panels. MATERIALS AND METHODS
We simply use a laser cutter to cut the commercial EL panels, in- Computational methods
cluding the power supply terminals at the end of an edge site, corre- The nonpolyhedral developable net was generated by our computa-
sponding to the computationally generated developable net of a tional algorithm. We implemented the computational unfolding
sphere and an ellipsoid with 500 meshes. The final cut EL panels can algorithm in C++, and the executable file can be found at http://
be stably and easily attached to the sphere (Fig. 4, A to C) and the masc.cs.gmu.edu/wiki/OrigamiSoftware. The 3D surface models
ellipsoid (Fig. 4, D and E, and fig. S6). The EL panels consist of top for the traditional Korean mask and the electric toy vehicle were
and bottom brittle electrodes with solid interlayers (including an obtained by 3D scanning followed by meshing with MeshLab soft-
⎢⎥⎢ ⎥⎢ ⎥
creasing and folding. In addition to a sphere and an ellipsoid model, the mechanical property inputs for the Si wafer
a traditional Korean mask was conformably wrapped by EL panels.
We used 3D scanning to obtain a 3D model and generate meshes ⎡ 11⎤ ⎡165.6 63.9 63.9 0 0 0 ⎤⎡ 11⎤
for the most curved region of the mask. For the traditional Korean
22 63.9 165.6 63.9 0 0 0 22
33 33
mask model, a total of 169 meshes are used for the target region, = 63.9 63.9 165.6
0 0 0 23 [GPa]
23
0
0
0
79.6
0 0
which are unfolded with the SE unfolding method without overlap-
⎣ 12⎦ ⎣ 0
0 0 0 0 79.6 0
0 0 0 79.6⎦⎣ 12⎦
31 31
ping (Fig. 4, F and G, and fig. S7). Last, the EL panel with a develop-
0
able net was conformally attached to the mask, and the panel exhibited
good operation without failure. The concept was applied for com- The wrapping process was simulated by compressing the 2D
plex exterior parts of an electric toy vehicle with a nonzero Gaussian nonpolyhedral developable net between the sphere and a concave
surface. We generated the meshes and the corresponding develop- mold of a wrapped part of the sphere (movie S2). The radius of the
able net via the GA unfolding method, as shown in fig. S8, and then sphere was set to 2 cm, replicating the radius of the sphere used in
EL panels were cut and attached to the surfaces to decorate the our experiment (Fig. 3G), and the radius of the concave mold was
exterior car parts (Fig. 4, H to J, fig. S8, and movie S3). We also fab- set to the sum of 2 cm and the 2D net thickness.
ricated a conformal primary battery. For battery fabrication, the
diversity of the developable net can yield advantages in terms of Experimental methods
manufacturing efficiency and printing material waste reduction for Cardstock papers, 100-m-thick stainless steel sheets, and a 20-m-
screen prints (fig. S9). thick Si wafer were used to demonstrate wrapping a steel ball with
In summary, we introduced the concept of computational wrap- nonstretchable materials. The commercial EL lighting panels were
ping to transform nonstretchable 2D flexible devices into 3D con- used to realize a computationally wrapped conformal device. The
formal devices. A surface with nonzero Gaussian curvature, such as cardstock papers and EL lighting panels were cut into developable
a perfect sphere, can be enclosed by a developable surface, but there nets with a cutting plotter (Cricut cutting machine), whereas the
will always be spaces between these two surfaces. The proposed stainless steel sheets and Si wafer were cut with a laser cutter. All the
computational method controls the distance between these two sur- developable nets were attached to the 3D curved surfaces with
faces to ensure sufficiently tight wrapping. Although approximating double-sided tape.
an arbitrary surface with developable surfaces has also been studied
in the past, all existing works break the surface into multiple sepa-
SUPPLEMENTARY MATERIALS
rated developable surfaces. Our work produces a single connected Supplementary material for this article is available at http://advances.sciencemag.org/cgi/
surface, called nonpolyhedral developable net, which is a conformal content/full/6/15/eaax6212/DC1
wrapping design of a 2D sheet for any 3D surface. Nonpolyhedral
developable net enables applications that require connectivity and con-
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