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Analog H3.D1

This chapter focuses on the analysis and design of linear amplifiers using MOSFETs as the amplifying device, emphasizing small-signal behavior and the ability to separate DC and AC analyses. It introduces graphical techniques, DC load lines, and AC load lines to develop small-signal parameters and equivalent circuits. The chapter also describes the common-source configuration and the importance of input and output resistance characteristics in amplifier performance.

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Rasyonel Teizm
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4 views

Analog H3.D1

This chapter focuses on the analysis and design of linear amplifiers using MOSFETs as the amplifying device, emphasizing small-signal behavior and the ability to separate DC and AC analyses. It introduces graphical techniques, DC load lines, and AC load lines to develop small-signal parameters and equivalent circuits. The chapter also describes the common-source configuration and the importance of input and output resistance characteristics in amplifier performance.

Uploaded by

Rasyonel Teizm
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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THE MOSFET AMPLIFIER

In this chapter, we analyze and design linear amplifiers that use field-
effect transistors as the amplifying device. The term small signal means
that we can linearize the ac equivalent circuit. We will define what is
meant by small signal in the case of MOSFET circuits. The term linear
amplifiers means that we can use superposition so that the dc analysis
and ac analysis of the circuits can be performed separately and the total
response is the sum of the two individual responses. The mechanism with
which MOSFET circuits amplify small time-varying signals was introduced
in the last chapter. In this section, we will expand that discussion using the
graphical technique, dc load line, and ac load line. In the process, we will
develop the various small-signal parameters of linear circuits and the
corresponding equivalent circuits.

Figure 4.1 shows an NMOS common-source circuit with a time-varying


voltage source in series with the DC source. We assume the time-varying
input signal is sinusoidal. Figure 4.2 shows the transistor characteristics,
dc load line, and Q-point, where the DC load line and Q-point are functions
of v GS , V DD , R D , and the transistor parameters. For the output voltage to be a
linear function of the input voltage, the transistor must be biased in the
saturation region. (Note that, although we primarily use n-channel,
enhancement-mode MOSFETs in our discussions, the same results apply to
the other MOSFETs.) Also shown in Figure 4.2 are the sinusoidal variations
in the gate-to-source voltage, drain current, and drain-to-source voltage,
as a result of the sinusoidal source v i. The total gate-to-source voltage is
the sum of V GSQ and v i. As v iincreases, the instantaneous value of v GS
increases, and the bias point moves up the load line. A larger value of v GS
means a larger drain current and a smaller value of v DS. For a negative v i
(the negative portion of the sine wave), the instantaneous value of V gs
decreases below the quiescent value, and the bias point moves down the
load line. A smaller v GS value means a smaller drain current and increased
value of v DS. Once the Q-point is established, we can develop a
mathematical model for the sinusoidal, or small-signal, variations in gate-
to-source voltage, drain-to-source voltage, and drain current.
 Small-Signal Equivalent Circuit
Now that we have the ac equivalent circuit for the NMOS amplifier
circuit, we must develop a small-signal equivalent circuit for the transistor.
As we have seen, the MOSFET is a three-terminal device. Three basic
single transistor amplifier configurations can be formed, depending on
which of the three transistor terminals is used as signal ground. These
three basic configurations are appropriately called common source,
common drain (source follower), and common gate. The input and
output resistance characteristics of amplifiers are important in
determining loading effects. These parameters, as well as voltage gain, for
the three basic MOSFET circuit configurations will be determined in the
following sections.
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