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Experiment -2_LED (1).Docx

The document outlines an experiment to plot and understand the electrical and optical characteristics of LEDs, specifically using an IR LED at 850nm. It discusses the theory behind LED operation, including internal and external quantum efficiency, optical power generation, and key LED characteristics such as light intensity and junction voltage versus current. The procedure includes measuring voltage and optical power, tabulating results, and plotting relevant curves.

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251SAYEE REKHE
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9 views

Experiment -2_LED (1).Docx

The document outlines an experiment to plot and understand the electrical and optical characteristics of LEDs, specifically using an IR LED at 850nm. It discusses the theory behind LED operation, including internal and external quantum efficiency, optical power generation, and key LED characteristics such as light intensity and junction voltage versus current. The procedure includes measuring voltage and optical power, tabulating results, and plotting relevant curves.

Uploaded by

251SAYEE REKHE
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MKSSS’s CUMMINS COLLEGE OF ENGINEERING FOR WOMEN, PUNE-52

CLASS: B.Tech. E&TC SEM II 2024-25 SUBJECT: BROADBAND COMMUNICATION SYSTEMS

CNUM: Performance Date:

Aim: To plot and understand electrical and optical characteristics of LED.

Apparatus : LED Module,DMM, Optical Power Meter.

Source used:IR LED 850nm.

Theory:

A light-emitting diode (LED) is a two-lead semiconductor light source that resembles a basic
pn-junction diode, except that an LED also emits light. When an LED's anode lead has a voltage
that is more positive than its cathode lead by at least the LED's forward voltage drop, current
flows. Electrons are able to recombine with holes within the device, releasing energy in the form
of photons. This effect is called electro-luminescence, and the color of the light (corresponding
to the energy of the photon) is determined by the energy band gap of the semiconductor.

To be useful in fiber transmission applications and LED must have a high radiance output, a fast
emission response time and high quantum efficiency. To achieve a high radiance and high
quantum efficiency, the LED structure must provide a means of confining the charge carriers and
the stimulated optical emission to the active region of the pn junction where radiative
recombination takes place.

Internal Quantum Efficiency

The internal quantum efficiency ηint is an important parameter of an LED. It is defined as the
fraction of the electron-hole pairs that recombine radiatively. If the radiative recombination rate
is Rr and the non-radiative recombination rate is Rnr, then the internal quantum efficiency is the
ratio is the ratio of the radiative recombination rate to the total recombination rate.

External Quantum Efficiency

The external quantum efficiency (ηext) of a LED is defined as the ratio of the photons emitted
from the LED to the number of internally generated photons. Due to reflection effects at the
surface of the LED typical values of ηout are < 10%.
Optical Power

If the current injected into the LED is I, then the total number of recombinations per second
is I/q, where q is the electron charge. Total number of radiative recombinations is equal
to (ηint I/q). Since each photon has an energy hν, the optical power generated internally by the
LED is: Pint = (ηint I/q) (hν).

LED Characteristics

Two important characteristics of a LED are its Light intensity vs. Current and Junction Voltage
vs. Current characteristics. These are described briefly below.

i)​ Light Intensity (Optical Power) vs. Current

This is a very important characteristic of an LED. The optical power generated by an LED is
directly proportional to the injected current I (current through the LED). However, in practice the
characteristic is generally non-linear, especially at higher currents.

ii) Junction Voltage vs. Current

The junction voltage vs. current characteristic of an LED is similar to the V-I characteristics of
diodes. However, there is one major difference. The knee voltage of a diode is related to the
barrier potential of the material used in the device. Silicon diodes and bipolar junction transistors
are very commonly used whose knee voltage or junction voltage is about 0.7 V. In an LED,
depending on the material used its junction voltage can be anywhere between 1.5 to 2.2 Volts.

Procedure:

1. Measure the series resistance R.


2. Switch ON LED Module and Multi meter.
3. Keep pot meter at minimum position.
4. Now vary the pot meter min to max and note down the reading of voltage across Resistor (V1)
, voltage across LED (VLED) and Optical Power Meter reading(PdBm).
5. Tabulate all the readings in below tabular column.
6. Calculate I1 using given formula also calculate power in mW
7. Plot voltage vs. current curve.
8. Plot power vs. current curve.
Observation Table:
Sr. V1 (mV) I1(mA) VLED Power(dBm) Power (MW)
No
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.

Calculations:
R=. I1=

Power in dBm=10 log (power / 1mW)

Conclusions:

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