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Energy Band Gap of A Semiconductor (EP Lab)

The document outlines an experiment to determine the energy band gap (Eg) of a semiconductor diode using a Germanium diode and various apparatus. It describes the theory behind energy bands in solids, the procedure for conducting the experiment, and the precautions to be taken. Additionally, it lists applications of the findings in fields such as photovoltaic devices, LEDs, and thermoelectric materials.

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23 views4 pages

Energy Band Gap of A Semiconductor (EP Lab)

The document outlines an experiment to determine the energy band gap (Eg) of a semiconductor diode using a Germanium diode and various apparatus. It describes the theory behind energy bands in solids, the procedure for conducting the experiment, and the precautions to be taken. Additionally, it lists applications of the findings in fields such as photovoltaic devices, LEDs, and thermoelectric materials.

Uploaded by

pavantejaramineni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Energy band gap of a Semiconductor

AIM: To determine the energy band gap (Eg) of a semiconductor diode.


APPARATUS: Germanium diode (OA 79), Regulated DC power supply, Voltmeter, Ammeter,
Thermometer, Temperature controller, Copper vessel, Heater and Bakelite lid, Connecting wires.
CIRCUIT DIAGRAM:

FORMULA:

THEORY:

In solids, several bands of energy levels are formed due to the intermixing of atoms in solids. We
call these set of energy levels as energy bands. In an isolated atom, the electrons in each orbit possess
definite energy. But, in the case of solids, the energy level of the outermost orbit electrons is affected by
the neighbouring atoms. When two isolated charges are brought close to each other, the electrons in
the outermost orbit experience an attractive force from the nearest or neighbouring atomic nucleus.
Due to this reason, the energies of the electrons will not be at the same level, the energy levels of
electrons are changed to a value which is higher or lower than that of the original energy level of
the electron. The electrons in the same orbit exhibit different energy levels. The grouping of these
different energy levels is known as the energy band. These energy bands are used to distinguish
between a metal, a semiconductor and an insulator.
The reverse saturation current (I0) in a semiconductor diode depends on temperature and is
expressed as:

Where,
IS: A constant related to material properties, Eg: Energy band gap of the semiconductor,
kB: Boltzmann constant (1.38×10-23 J/K), T: Absolute temperature in Kelvin.
Taking the natural logarithm of both sides gives:

By measuring the variation of reverse current (I0) with temperature, the energy band gap E g can
be determined.

PROCEDURE:
Connections are made as per the circuit diagram. Pour some water in the copper vessel. Fix the
diode to the Bakelite lid such that it is reverse biased. Bakelite lid is fixed to the copper vessel, a
hole is provided on the lid through which the thermometer is inserted in to the vessel. With the
help of heater, the copper vessel is heated up to 80oC. An input voltage of 1.5 V (which is kept
constant) is applied. The current readings are noted for every 5 oC fall of temperature till the
temperature reaches room temperature. Compute log(I0) and 1000/TK for each reading. Plot log(I0)
(y-axis) versus 1000/TK (x-axis), and find the slope of the straight line.

MODEL GRAPH:
TABULAR FORM:

Temperature Temperature Current 1000/T


S. No Log I
(oC) (K) I (μA) (K-1)

CALCULATIONS:
PRECAUTIONS:
1. The diode and the thermometer should be immersed at the same level in the oil/water bath.
2. The temperature and the current should be noted simultaneously.
3. When the experiment is performed with Germanium diode, then the temperature should
not exceed 80oC.
4. The experiment should be performed by connecting the diode in the reverse biased
position.

APPLICATIONS:
1. Photovoltaic Devices (Solar Cells).
2. LEDs and Semiconductor Optoelectronics.
3. Thermoelectric Materials.
4. Temperature Sensors and Detectors.
5. Materials for Quantum Dots and Nanotechnology.
6. Magnetic Semiconductors for Spintronics.
7. Superconductors.

RESULT:
The energy band gap of the given semiconductor diode is found to be ____________.

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