SHORT QUESTION
SHORT QUESTION
MULTIPLE CHOICE
I. 1. Which of the consititue and active components ?
a) Semiconductor device b) Resistor c) Capacitor d) Inductor
2. Wich is of the following is a pasive component ?
a) Semi conductor device b) Vaccum tube device c) Capacitor d) All the aove
3. A Germanium atom contains
a) 2 electron orbits b) 3 valence electron c) 4 prontons d) 4 valence electron
4 The charge of an electron is a) 1.6 x 10
15. When a semiconductor is doped its electrical conductivity a) increase b) decrease in the direct ratio of the do
d) remains unaltered
16. The forbidden energy gap in semiconductor a) is always 0 b) lies just below the valence band
d) lies just above the conduction band
17. The conduction band is a) Same as forbidden energy gap b) gernaly located on the top of the crystal
d) A range of the energies corresponding to the energy of the free electron
18. The larger the orbit the ……… is the energy of the electron a) Neglible b) lower
19. A P-N junction offers a) high resistance in forward as well as reverse direction b) low resistance in forwa
c) conducts in forward direction only d) conducts in reverse direction only
20.A P-N juction is said to be forward biased when a) +ve terminal of the bty. connected to P-side and -ve side to
b) +ve terminal of the bty. connected to N-side and -ve side to th
c) N-side is connected to the P-side
d) Junction is earthed
2. Hole currnet is the movement of negative charges in the opposite direction from the electron flow F
3. Doping with phosphorus makes silicon P-type with majority charges and minority holes charge. F
4. Hole current into an electrode is considered the positive direction of the current . T
5. The internal barrier potential at P-N junction for silicon is approx 9 Volt F
7. The SCR is a silicon diode rectifier with the gate controlle electorde. T
15. The proton is stable charge in the nuecleus that is not free to move. T
5. The neighbouring atoms in the crystalline lattice instructure of the semiconductor Ge form ………….bonds
10. The process of the adding of impuity in semiconductor is called ………. Doping
2. A PNP tr is made of
a) Silicon b) Germanium c) Either Silicon or Germanium
3. In most tr. The collector region is made physically larger than the emitter region
a) For dissipating heat b) to distinguish it from other region c
c) As it is sensitive to ultra violet ray d) to reduce resistance in the path of flow of electron
4. In a tr. Which of the following region is very likely dope and very thin
a) Emitter b) Base c) Collector d) None of the above
6. In a NPN tr. When emitter junction is forward bias and collector junction is reverse bias the tr. Will operate in
a) Active region b) Saturation region c) Cutt off region d) Inverted re
8. In a NPN tr. of the emitter junction is reverse bias and collector is also reverse bias the tr. will operate in
a) Acid region b) Saturation region c) Cutt off region d) Inverted re
15. A DC amplifier
a) DC only b) AC only c) Both AC and DC d) Neither of the above
Wave Propagation
I
SL.no. MCQ
1 The value of propagation constant P will be
a) 15.9 radians /km b) 3`.8 radians/km
c) 63.6 radians / km d) 105.4 radians/km
2 Skip distance of radio wave increases with ……….
a) increasing in freq. b) reduction in freq.
c) Temp. of atmosphere
8 The best solution to combat fading of signal in ship to ship commn. is by used of
a) Space diversity b) freq. diversity c) none of these
10 The ionospher layer which responsible for long distance commn. is ……….
a) D layer b) E layer c) F layer d) none of these
1 For sattelite commn. The freq. should be …………… than the critical freq.
2 The max. freq. that can be used for transmission between
two points is known as ………….
3 ………….is the name given to undesirable changes in the intensity and loudness
of the wave at the RX point.
4 The real part of propagation constant is known as ………….. Constant
5 VHF range is …………..
6 Sky wave propagation is suitable for fequencies between ……………
7 The higher freq., the ……………. The skip distance .
8 Antenna converts electrical signal to …………….. Wave and vice versa.
9 The propagation constant represents the relationship between
input and output …………….
10 Ground wave commn. is used for ………….. Broadcasting
11 E layer appear at 110 km height during …………… time.
12 Sky wave propagation is also called as ……………propagation
13 Critical freq. is different for ………… layers
14 The D layer extends approx. ………….
15 ………….. Wave remains unaffected during day and night
NET WORK
I MCQ
1 A four terminal net work is a network having only input of
a) Four pair b) Three Pair c) Two pair d) one pair
3 The propagation constant which represents the relationship between the input
and output …………..
a) Voltage b) current c) Resistance d) none of the these
8 Two networks having the same characteristics impedance and same propagation
are said to be ………..
a) equivalent b) unequivalent c) constant d) none of these
I MCQ
1 Parallel wire is the example of …………… line.
a) Balanced b) Unbalanced c) both d) none
d
0
emiconductor a
c semiconductor d
c;y filled by valence electron from t d) d) all of the above
to the N side
the P side
Covalent bond
d
a
regioin
c
region
er junction a
a
a
F
F
CE
n
Ans.
a
c
b
more
MUF
Fading
Attenuation
30 to 300 MHz
2 to 30 MHz
more
Electromagnetic
Current
AM
Day
ionospheric
Different
50-90 km
Ground
F
T
T
T
F
F
F
F
T
F
T
T
F
T
b
b
Attenuators
0.1151
Alternative
Equal
image impedance
T
T
T
T
T
T
F
AMPLIFIER
I. MCQ
1 Push pull amplifier is working on the principle of
a) Class A amplifier b) class B amplifier c) class C amplifier
6 The change of output wave shape to the input wave shape of an amplifier is
called ………….
a) Collector efficeincy b) distortion c) amplication factor
19 Which of the following transistor configuation has the highest input resistance
and lowest output resistance
a) Common emiter b) common collector
c) common base d) cathode follower
20 Which of the following transistor amplifier has the voltage gain of less than unity
a) common emitter amplifier b) common base amplifier
c) common collector amplifier d) none of these
21 Which of the following transistor amplifier has the voltage and current gain
of more than unity
a) common emitter amplifier b) common base amplifier
c) common collector amplifier d) none of these
22 Which of the following transistor amplifier has the voltage gain very close to unity
a) common emitter amplifier b) common base amplifier
c) common collector amplifier d) none of these
15 The voltage gain of a transistor amplifier in CE more is always less than unity.
16 The normal transistor amplifier gives higher gain than triode amplifier.
17 A good biasing circuit should stabilize the collector current against the temp.
variation.
18 A direct coupled amplifier does not have any coupling capacitor.
19 The sound waves can not be amplied by transistor, but audio signal can be.
20 High frequency roll off in an audio amplifier causes weak base responds.
1
b
c
d) Class AB
c) amplication factor
a
e
a
g range of the receiver
a
c
T
T
T
F
F
T
T
T
F
T
F
F
T
T
F
OSCILLATOR
MCQ
1 An electronic oscillator is c
a) just like an alternator
b) nothing but an amplifier
C) an amplifier with feed back
d) a convertor of AC to DC energy
10 A multivibrator produces c
a Pure sine waves
b distorted sine waves
c square waves
d saw tooth voltages
10 A multivibrator produces c
a Pure sine waves
b distorted sine waves
c square waves
d saw tooth voltages
5 The voltage gain of a transistor amplifier in CE more is always less than unity. F
6 The normal transistor amplifier gives higher gain than triode amplifier. T
7 A good biasing circuit should stabilize the collector current against the temp. T
variation.
9 The sound waves can not be amplied by transistor, but audio signal can be. T
10 High frequency roll off in an audio amplifier causes weak base responds. F
6 The change of output wave shape to the input wave shape of an amplifier is called …… b
a) Collector efficeincy
b) distortion
c) amplication factor
19 Which of the following transistor configuation has the highest input resistance b
and lowest output resistance
a) Common emiter
b) common collector
c) common base
d) cathode follower
20 Which of the following transistor amplifier has the voltage gain of less than unity c
a) common emitter amplifier
b) common base amplifier
c) common collector amplifier
d) none of these
21 Which of the following transistor amplifier has the voltage and current gain a
of more than unity
a) common emitter amplifier
b) common base amplifier
c) common collector amplifier
d) none of these
22 Which of the following transistor amplifier has the voltage gain very close to unity a
a) common emitter amplifier
b) common base amplifier
c) common collector amplifier
d) none of these
18. The larger the orbit the ……… is the energy of the electron a) Neglible b) lower
19. A P-N junction offers a) high resistance in forward as well as reverse direction b) low resistance in forward as
c) conducts in forward direction only d) conducts in reverse direction only
20.A P-N juction is said to be forward biased when
a) +ve terminal of the bty. connected to P-side and -ve side to the N side
b) +ve terminal of the bty. connected to N-side and -ve side to the P side
c) N-side is connected to the P-side
d) Junction is earthed
op of the crystal c) generaly located on the bottom of the crystal
c) greater