UNIT :- 1

Q1) Draw and explain V-I characteristics of P-N junction Diode.

S14, W14
Q2) Explain the need of filter circuit in power supply.
W13, W14
Q3) Explain : 1.Full wave center tapped rectifier
2. Full wave bridge rectifier.
W12, W15
Q4) Explain operation of PN junction diode using VI characteristics and describe the terms.: 1.
Depletion region
2. Barrier potential
W12, W15.
Q5) with the help of neat sketch explain π filter and do its analysis.
W11, S13, S14, W15
Q6) define ripple factor. State it's significance obtain expression for the ripple factor of full wave
rectifier.
S14,S16,S17,W17.
Q7) what are different types of filter? Explain working of capacitor input filter with proper
waveforms.
S16, S17, S18
Q8) Explain zener breakdown concept.
S14, W15, S19
Q9) Distinguish between avalanche breakdown and zener breakdown. S15, W16, W22, S23, S24
Q10) draw and explain VI characteristics Of zener diode.
W13, S15, W22, W23
Q11) Explain forward & reverse bias mode of operation of PN junction Diode In details.
W22, S23, W23, S24
Q12) What do you mean by voltage regulation? Explain line regulation of Zener diode in details.
S16, S24, S23
UNIT :- 2
Q1) explain the term stability factor (s).
W14, S15
Q2) why h-parameters are used to do analysis of transistor? Give the formula for conversation
form CE h-
parameters to CB and CC h-parameters and to r-parameter.
S13, W15
Q3) what do you mean by transistor biasing? Explain best method of transistor biasing with
suitable diagram.
S12, W12, S15, S15, S19.
Q4) show that alpha=beta/1+ beta.
W13, S16
Q5) explain the concept of DC load line and operating point with reference to BJT amplifier.
S12, W12, S16, S19
Q6) explain working of C-Type filter circuit and need of filter circuit in power supply.
W22, S23
Q7) calculate RMS current average current rectifier efficiency of full wave rectifier.
W22,S23
UNIT :- 3
Q1) explain dartington emitter follower.
1. Frequency response
2. Upper cut off frequency
3. Lower cut off frequency
4. Bandwidth
W12, S14
Q2) explain the need of multistage transistor amplifier.
W11, S14, W15
Q3) explain Darlington emitter follower.
S15, S16, W16
Q4) explain bootstrap emitter and explain bootstrapping principle with its advantage.
S12, W12, W15, W17, W18
Q5) explain bootstrap emitter and explain bootstrapping principle with its advantage.
S12, W12, W15, W17, W18
Q6) explain transformer coupled amplifier and draw its frequency response. W11,S15, W15,
W17, W19
Q7) what is RC coupled amplifier? Explain its frequency response.
S12, W12, S13, W13, S14, W15, W16, S17, W17, S18, W19
Q8) explain bootstrapped emitter follower with circuit diagram. How input impedance increase
in it?
S17, S18, S19
Q9) why cascading of amplifier is required, explain.
S12, W12, W13, S16, W16, S19, W19
Q10) explain the operation of direct coupled amplifier also draw it's frequency response.
W14, S17,W19
Q11) show that:beta = alpha/1-alpha
( Repeated from ch-2 )S14
Q12) show that S=1 for voltage divider bias method.
(Repeated from ch-2 )W13
Q13) explain operation of NPN transistor iin details.
W22, S23, W23
Q14) explain the concept of DC load line and operating point with reference to BJT amplifier.
 S24, W23, S23
Q15) explain voltage divider bias in details and derive the expression for stability factor of it.
W23,S24
UNIT :- 4
Q1) with reference to operating point explain with suitable diagram class A, B, AB and class C
of Power Amplifier.
S12, W12
Q2) explain crystal oscillator in detail.
W13, W14
Q3) explain the Barkhausen's criterion of oscillations.
W13, W15
Q4) what is cross over distortion? How it is over come in class AB amplifier?
W11, W13, S15, W15
Q5) explain working working of Hartley oscillator with neat circuit diagram. W12, S15, W15,
Q6) show that the maximum efficiency of class B push-pull amplifier is 78.5%.
S12, W12, S16
Q7) explain the classification of power amplifier on the basis of operating point.
W13, S14, S16
Q8) explain the RC phase shift oscillator with circuit diagram. How Barkhausen criteria is
fulfilled there?S
12, W12, S17
Q9) explain classification of power amplifier based on position of Q point. S15, W17
Q10) what is Wein bridge oscillator? How is Barkhausen criteria satisfied there?
W16, S18
Q11) explain the operation of R.C phase shift oscillator.
S14, S15, S16, S17, S19
Q12) show that efficiency of class B power amplifier if 78.5%.
W11, S14, S19
Q13explain the working of transformer coupled class A amplifier. Show that its efficiency is
50%.
W16, W19
Q14) explain bootstrap emitter follower.
W22, S23
Q15) Explain operation of direct coupled amplifier along with its frequency response. Enlist the
application of
it.
W23, S24
Q16) explain transformer coupled amplifier with frequency response & it's advantage and
disadvantage.
W23, S24
Q17) explain Darlington emitter follower.
W22, S23, S24
Q18) explain bootstrapped emitter follower transistor amplifier circuit.
W23, S24
UNIT :- 5
Q1) explain how LED works?
S14, W14
Q2) explain working of Schottkey diode with neat diagram.
S13, W13, W14, S15, W15, S17
Q3) draw the characteristics of tunnel diode and explain the application of negative resistance
region.
S13,S14, W15
Q4) explain phototransistor working using diagram of construction circuit symbol and
characteristics of a
phototransistor.
S12, W12, S13, W15, S16, W16, W17
Q5) draw and explain V-I characteristics of tunnel diode and indicate the useful region in the
characteristics.
W11, W17
Q6) explain the working of Photodiode with its application.
S14, W14, W16, S17, W17
Q7) explain with neat diagram working of PIN diode in details.
W12, S17, S18
Q8) what is LED? Give it's principle working construction and circuit symbol.
W12, W15, W18
Q9) explain why varactor diode is known as voltage variable capacitor diode.
W11, S14, S16, S17, S19
Q10) explain the characteristics of tunnel diode with various regions in it.
W12, W13, W14, S15, W16, S18, W18, S19
Q11) compare LED with photo-diode.
W13, S15, S16, W16, S19, W19
Q12) explain the operation of varactor diode.
S13,W13, W19
Q13) explain UJT as a relaxation oscillator.
W23, S24
Q14) draw and explain operating of N-channel JFET.
W22, S23, W23,S24
Q15) explain the difference between the enhancement mode and depletion mode MOSFET.
W22, W23, S24
UNIT :- 6
Q1) for a FET prove that 𝜇 = 𝑟𝑑 ∗ 𝑔𝑚 where
µ-amplification factor
rd-drain resistance
gm-transconductance
W13, s14, w15
Q2) explain the construction and characteristics of UJT.
W13, W14, S15, W16, S17
Q3) explain UJT relaxtion oscillator with neat circuit diagram and drive the expression for
frequency of
oscillations.
S12, W12, W17
Q4) explain n-cannel enhancement types MOSFET on the basis of construction operation and
characteristics
S17, S18

Q5)

W13, S15, S16, S18

Q6) Explain the difference between the enhancement mode and depletion mode MOSFET.
S12, W14, W18
Q7) for FET prove that , µ=𝛾d*gm
µ-amplification factor
rd-drain resistance
gm-transconductance
S12, S17, S18, S19
Q8) Compare between BJT and JFET.
S14, S15, W17, S19
Q9) Define the terms for UJT
1. intrinsic standoff ratio
2. interbase resistance.
S12, W12, W13, S14, S16, S19
Q10) explain the operation of UJT as a relaxation oscillator.
S12, W12, S14, S15, S18, S19, W19
Q11) draw and explain the drain and transfer characteristics of depletion type N-channel
MOSFET.
W11, W17, W19
Q12) explain LED diode along with its characteristics and application .
S23, W22
Explain construction working characteristics advantages and application of Schottky diode.
W22, S23, S24
Q13) explain construction working of varactor diode in details.
W22, S23, S24
Q14) explain construction and working of tunnel diode in details. Also give its application.
W22, S23, W23, S24