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Assignment 01 Part 1 Applied Physics

This document outlines an assignment for Applied Physics focused on semiconductors, detailing various questions related to atomic structures, Fermi energy, current flow, energy band diagrams, and carrier concentrations. It requires drawings and explanations of silicon and germanium structures, as well as the behavior of n-type and p-type semiconductors at different temperatures. The assignment is due on March 24, 2025, and covers fundamental concepts in semiconductor physics.

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mehakarifbutt
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© © All Rights Reserved
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11 views

Assignment 01 Part 1 Applied Physics

This document outlines an assignment for Applied Physics focused on semiconductors, detailing various questions related to atomic structures, Fermi energy, current flow, energy band diagrams, and carrier concentrations. It requires drawings and explanations of silicon and germanium structures, as well as the behavior of n-type and p-type semiconductors at different temperatures. The assignment is due on March 24, 2025, and covers fundamental concepts in semiconductor physics.

Uploaded by

mehakarifbutt
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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ASSIGNMENT NO.

01

APPLIED PHYSICS
Chapter 1: Semiconductor—An Overview
Page 2-41
from
Basic Electronic Engineering. S.S. Srikant and P.K. Chaturvedi. Springer (2020)

Submission Date: 24 Mar, 2025 (Before 4pm)


Short Question
1. Draw the atomic structure of Silicon (Si) and Germanium (Ge), which has an atomic number of 14
and 32. Include the following:
a) What are the number of electrons in each energy level (shell/orbit).
b) How electrons in shells are divided into sub-shells.
c) How many electrons are at the highest energy level.
2. Explain the fermi energy from the following diagram for the n-type and p-type Si with respect to
temperature and doping densities.

3. Explain the following:


a) What are the conventional current and electron flow?
b) Write the equation for the total current density due to free electrons and holes
concentration.
4. Draw or explain the energy band diagrams for the Insulators, conductors and semiconductors.
5. Draw the energy band diagram for the:
a) Formation of Free Electrons and Holes as Free Carriers
b) Extrinsic p-type semiconductor
c) Extrinsic n-type semiconductor
6. Give the fermi energy level of intrinsic Semiconductor

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7. Use the energy band diagram to explain the n-type and p-type fermi level at 0° K and 300° K. Also
give the value of ND and NA at 300° K.
8. Give the formula for the intrinsic carrier concentration and conductivity in intrinsic semiconductors.
9. Draw the energy band diagram for the Formation of Free Electrons and Holes as Free Carriers
and also give the formula for the concentration of electron (n) and holes (p) in semiconductor.
10. Explain the majority and minority charge concentration for the n-type and p-type semiconductors
with respect to donor ions (ND) and acceptor ions (NA).
11. For Silicon atom with atomic number is 14 .
a) Please write electronic configuration
b) Indicates missing or unoccupied state electrons at outermost, to show, which group it
belongs
c) Draw a diagram for pair-creationand
d) Pair annihilation process during breakage of covalent bond, when energy is provided.
12. Draw the energy band diagram and describe fermi energy levels for the
a) Intrinsic semiconductor at room temperature (300 °K)
b) Extrinsic p-type semiconductor
c) Extrinsic n-type semiconductor
13. Write electronic configuration for Boron atom, which atomic number is 5
14. What is Mass Action Law
15. Explain the following:
c) What are the drift and diffusion currents?
d) Write the equation for the drift current density due to free electrons and free holes.
e) Find the mobility of electrons when drift velocity is 1 x 107 cm/s and electric field (E) is 50
kV/cm?

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