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Engineering Physics Course Syllabus 2023 1

The document outlines the syllabus for the Engineering Physics course under the CBCS scheme for Semesters I and II, detailing course objectives, teaching methods, and a structured syllabus divided into modules covering semiconductor physics, dielectrics, quantum mechanics, crystallography, and thin films technology. It includes practical laboratory experiments to reinforce theoretical concepts. Additionally, it maps course outcomes to program outcomes and lists recommended textbooks and e-resources.

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Shivam Mehta
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0% found this document useful (0 votes)
30 views

Engineering Physics Course Syllabus 2023 1

The document outlines the syllabus for the Engineering Physics course under the CBCS scheme for Semesters I and II, detailing course objectives, teaching methods, and a structured syllabus divided into modules covering semiconductor physics, dielectrics, quantum mechanics, crystallography, and thin films technology. It includes practical laboratory experiments to reinforce theoretical concepts. Additionally, it maps course outcomes to program outcomes and lists recommended textbooks and e-resources.

Uploaded by

Shivam Mehta
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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ENGINEERING PHYSICS

[As per Choice Based Credit System (CBCS) scheme]

SEMESTER – I & II
Subject Code : 22EN1109 Credits : 04
Hours / Week : 03 Hours Total Hours : 39 + 26 Hours
L–T–P : 3–0–2

Course Learning Objectives:

This Course will enable students:


1. To comprehend solids' band structure, semiconductors' electrical conductivity, and
semiconductor devices such as LEDs, photodiodes, and solar cells, as well as their
applications in engineering.
2. To examine many types of engineering materials, including electronic, electrical,
and magnetic materials, as well as dielectric material properties and applications in
science and engineering.
3. To understand the fundamental ideas of quantum mechanics that are necessary for
thoughtful and addressing engineering challenges in Science and technology.
4. To comprehend various crystal systems, Miller indices and determine crystal
structure using XRD technique.
5. To understand thin-film phenomena, thin-film production techniques, and
applications and to expert how to create Nano materials utilizing a top-down and
bottom-up approuches, as well as to explore Nano science and technology
applications in engineering and medicine.
Teaching-Learning Process (General Instructions)
These are sample new pedagogical methods, where teacher can use to accelerate the
attainment of the various course outcomes.

1. Lecture method means it includes not only traditional lecture method, but different
type of teaching methods may be adopted to develop the course outcomes.
2. Interactive Teaching: Adopt the Active learning that includes brainstorming,
discussing, group work, focused listening, formulating questions, notetaking,
annotating, and roleplaying.
3. Show Video/animation films to explain functioning of various concepts.
4. Encourage Collaborative (Group Learning) Learning in the class.
5. To make Critical thinking, ask at least three Higher order Thinking questions in the
class.
6. Adopt Problem Based Learning, which fosters students’ Analytical skills, develop
thinking skills such as the ability to evaluate, generalize, and analyse information
rather than simply recall it.
7. Show the different ways to solve the same problem and encourage the students to
come up with their own creative ways to solve them.
8. Discuss how every concept can be applied to the real world - and when that's
possible, it helps improve the students' understanding.
SYLLABUS
10 Hours
MODULE – I
 Semiconductor Physics: Classification of Solids, Band structure, Fermi level in
intrinsic and extrinsic semiconductors, Density of energy states in conduction and
valence bands of a semiconductor (Mention the expression), Expression for
concentration of electrons in conduction band (Derivation), Intrinsic carrier
concentration, Conductivity of semiconductors, Hall effect, Derivation of Hall
Coefficient, Numericals. (7 hours)

(Text Book-2: Chapter 24.1 to 24.9, Chapter 25.9 to 25.11)

 Semiconducting devices for optoelectronics applications: - Principle and


working of PN-junction diode, Light Emitting Diode, Photodiode and Solar cell [3
hours]

(Text Book-2: Chapter 25.1 to 25.8)

MODULE – II 10 Hours

 Dielectrics: Introduction – Dielectric polarization – Dielectric Polarizability,


Susceptibility and Dielectric constant - Types of polarizations: Electronic, Ionic
and Orientation polarizations (qualitative) – Lorentz Internal field – Claussius -
Mossoti equation (derivation), – Applications of Dielectrics – Numericals. (5
hours)

(Text book 1: Chapter 4.1, 4.2, 4.3, 4.4, 4.5)

 Introduction to Magnetic Materials: - Magnetic dipole moment - Magnetization-


Magnetic susceptibility and permeability - Classification of magnetic materials:
Dia, para, Ferro, anti-ferro & Ferri magnetic materials – Hysteresis effect - soft and
hard magnetic materials – Applications of magnetic materials in Engineering ,
Numiricals (5 hours)

(Text book 1: Chapter 4.9, 4.10, 4.11)


MODULE – III 10 Hours
QUANTUM MECHANICS:

 Foundations of quantum theory, Wave function and its properties, de-Broglie


hypothesis, Heisenberg Uncertainty principle. One dimensional time independent
Schrodinger wave equation, Eigen values and Eigen functions. Applications: one
dimensional motion of an electron in a potential-well. Basics of Quantum
computing - Concepts of Superposition, entanglement, Interference and Qubit. [7
hours]

(Text book 1: Chapter 1.5 and Chapter 2 all units)

 LASER PHYSICS: Introduction to lasers. Conditions for laser action. Requisites


of a Laser system Principle, Construction and working of Nd-YAG and
Semiconductor Laser. Application of Lasers in Defense (Laser range finder),
Engineering (Data storage) and Applications of Lasers in medicine [3 hours]
(Text book 1: Chapter 5.1, 5.2, 5.3, 5.4, 5.5)

MODULE – IV 04 Hours

 Crystallography: Lattice, unit cell, lattice parameters, crystal systems, Bravais


lattices, Packing fraction for SCC, BCC and FCC crystal systems. Introduction to
Miller Indices. Determination of Crystal structure by Miller Indices. Expression for
Inter-planar distance. X-ray diffraction, Bragg’s law and Determination of Crystal
structure by Powder method. Numericals [4 hours]

(Text book 1: Chapter 7 all units)

MODULE – V 05 Hours

 Thin films technology: Introduction to thin-films-Advantages of thin-films over


bulk materials. Introduction to thin film deposition processes (CVD & PVD) -
Physical vapour deposition (Thermal evaporation technique and sputtering
technique) process, Applications of Thin films. [3 hours]

 Nano Science &technology: Introduction to Nano materials, Classification of nano


materials, Size dependent properties of materials, Top-down and Bottom-up
approach- Ball-milling and Photolithography, Process. Applications of Nano
technology in Biology and Engineering. [2 hours]

(Ref. Text Book-2: Chapter 2. All units, Text Book-1: Chapter 8.1 to 8.7)

Course Bloom’s
Outcom Description Taxonomy
e Level
At the end of the course the student will be able to:

Illustrate Semiconductors, Semiconductor devices such as


1 Photo diode, LED, Solar cell and its applications in L1 & L3
engineering.
Distinguish the different engineering materials such as
Di-electric-Ferro, Piezo, Pyro and Electronic materials
2 properties and their applications in engineering also L2 & L3
Apply the concept of magnetism to magnetic data storage
device fabrication
Describe the concepts of Quantum mechanics and
applications of Schrodinger time independent wave
3 L2 & L3
equations. To understand the lasing action and its
applications in Science and technology
4 Classify Lattice parameters of different crystalline solids L1 & L3
by using X-ray diffraction methods and its applications in
science and engineering
Interpret Basic concepts of thin films and thin film
deposition processes and their applications leads to
5 L2
Sensors and engineering devices

Categorize Nano materials, Properties, and fabrication of


Nano materials by using Top-down and Bottom –up
6 L2 & L3
approach’s - Applications for Science and technology.

Table: Mapping Levels of COs to POs / PSOs

COs Program Outcomes (POs) PSOs


1 2 3 4 5 6 7 8 9 10 11 12 1 2
CO1 2 1
CO2 2 1
CO3 2 1
CO4 1 1
CO5 1 1 2
CO6 3 2 3
3: Substantial (High) 2: Moderate (Medium) 1: Poor (Low)

TEXT BOOKS:
1. P. S. Aithal, H. J. Ravindra, Textbook of Engineering Physics (2011), Acme learning
Private Limited, New Delhi, India.
2. Shatendra Sharma, Jyotsna Sharma, Engineering Physics (2019), Pearson, Noida,
Uttar Pradesh, India.
REFERENCE BOOKS:

1. M. Young (1977), Optics & Lasers An Engineering Physics approach, Springer


2 K.L. Chopra, Thin film Phenomena, McGraw Hill, New York.
1. S. O. Pillai (2018), Solid State Physics, revised edition, New Age International
Publishers, New Delhi
2. M N Avadhanulu, P G Kshirsagar, TVS Arun Murthy (2018), A textbook of
Engineering Physics, S Chand, New Delhi.
E-Resources:
1. https://nptel.ac.in/courses/106/101/106101060/
2.
http://openclassroom.stanford.edu/MainFolder/CoursePage.php?course=IntroToAlgori
thms

Activity Based Learning (Suggested Activities in Class)


1. Demonstration of solution to a problem through Project demo model.
ENGINEERING PHYSICS LAB
Total Contact Hours: 26
Following are experiments to be carried out in Engineering Physics Lab

LABORATORY EXPERIMENTS:
List of Experiments:

1. I-V characteristics of a Zener Diode


I–V Characteristics of a Zener diode in forward and reverse bias condition (Module 2)
2. Planck’s constant
Measurement of Planck’s constant using LED (Module 2)
3.Transistor characteristics
Input and output characteristics of a NPN transistor in C-E configuration (Module2)
4. Dielectric constant
Determination of dielectric constant of a dielectric material (Module 2)
5. Torsional Pendulum
Determination of moment of inertia of a circular disc using torsional pendulum
6. Diffraction grating
Determination of wavelength of a laser light using diffraction grating (Module 4)
7. LCR series and parallel resonance
Study the frequency response of a series and parallel LCR circuit (Module 3)
8. Band gap energy
Determination of energy gap of an intrinsic semiconductor (Module 2)
9. Hall effect
Determination of Hall coefficient and type of semiconductor (Module 2)

******************THE END**********************************

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