19ECCN1701 – RF and Microwave

Engineering
Unit I – Two Port Network Theory
Presented by,
Ms. S. Thilagavathi
Assistant Professor
Department of Electronics and
Communication Engineering

30-Nov-23 RFME – Unit I – Two port network theory 1

Course Outcome 1:
Analyze the given High Frequency network using S
parameters

Learning Outcome 1:

Distinguish Low frequency and High frequency circuit

analysis

30-Nov-23 RFME – Unit I – Two port network theory 2

 Two Port Networks

Generalities:

The standard configuration of a two port:

I1 I2
+ +
Input Output
V1 The Network V2
_ Port Port _

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RFME – Unit I – Two port network theory
 Two Port Networks
Network Equations

V1 = z11I1 + z12I2 Hybrid

Impedance
H parameters
Z parameters
V2 = z21I1 + z22I2

V1 = h11I1 + h12V2
Admittance I1 = y11V1 + y12V2
I2 = h21I1 + h22V2
Y parameters
I2 = y21V1 + y22V2

Transmission V1 = AV2 - BI2

A, B, C, D
parameters I1 = CV2 - DI2

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RFME – Unit I – Two port network theory
 Two Port Networks
Z parameters:
V
z = 1 z11 is the impedance seen looking into port 1
11 I
1 I =0 when port 2 is open.
2

V z12 is a transfer impedance. It is the ratio of

z = 1
12 I the voltage at port 1 to the current at port 2
2 I =0
1 when port 1 is open.

V
z = 2 z21 is a transfer impedance. It is the ratio of
21 I
1 I =0 the voltage at port 2 to the current at port 1
2
when port 2 is open.
V
z = 2 z22 is the impedance seen looking into port
22 I
2 I =0
1 2 when port 1 is open.
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RFME – Unit I – Two port network theory
 Two Port Networks
Y parameters:

I y11 is the admittance seen looking into port

y = 1
11 V V =0 1
1 2
when port 2 is shorted.
I y12 is a transfer admittance. It is the ratio
y = 1 of the current at port 1 to the voltage at
12 V V =0
2 1 port 2 when port 1 is shorted.

I y21 is a transfer impedance. It is the ratio

y = 2
21 V
1 V =0 of the current at port 2 to the voltage at
2
port 1 when port 2 is shorted.
I
y = 2 y22 is the admittance seen looking into port
22 V V =0
2 1 2 when port 1 is shorted.
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RFME – Unit I – Two port network theory
 Two Port Networks
Transmission parameters (A,B,C,D):

The defining equations are:

V1   A B   V2 
 I  = C D  − I 
 1   2 
V1
A= B=
V1
V2 I2 = 0 − I2 V2 = 0

I1
C= D=
I1
V2 I2 = 0 − I2 V2 = 0

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RFME – Unit I – Two port network theory
 Two Port Networks
Hybrid Parameters:

V1   h11 h12   I 1 

 I  = h h22  V2 
 2   21
The equations for the hybrid parameters are:

V1 V1
h11 = h12 =
I1 V2 = 0
V2 I1 = 0

I2
h21 = I2
I1 h22 =
V2 = 0 V2 I1 = 0

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RFME – Unit I – Two port network theory
 Two Port Networks Scattering Parameters

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RFME – Unit I – Two port network theory
 Characteristics of Microwave
• Microwave Lengths are very small
• Microwave Pulses are very short so that they cab be used for distance or time
measurement
• High frequency of microwave means very large bandwidth is available for
communication
• Microwave Radiation penetrates fog and clouds, travels in straight lines and
give reflections hence can be used for distance and direction measurement
• Microwaves are necessary for communication through satellite because they
can pass through ionosphere which reflects low frequency waves
• Microwave Power is absorbed by water or another material containing water so
that microwaves can be used for heating and drying

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RFME – Unit I – Two port network theory
Low frequency vs High Frequencies

• At lower frequency

➢Large wavelength, no phase variation over the devices’ physical

dimension, circuit theory, lumped-element, R, L, C.

• At higher frequency

➢ Wavelength shorter than the device's physical dimension,

transmission line theory needs to be introduced, distributed
elements.

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RFME – Unit I – Two port network theory
Low frequency vs High Frequencies

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 INDUCTORS AT HIGH FREQUENCY

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 WIRES AT HIGH FREQUENCY

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 Distributed
Element

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Network Characterization
At low frequencies

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RFME – Unit I – Two port network theory
Moving to higher frequencies

Equipment is not readily available to

measure total voltage and total current at
the ports of the network.

Short and open circuits are difficult to

achieve over a broad band of frequencies.

Active devices, such as transistors and

tunnel diodes, very often will not be short
or open circuit stable.

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RFME – Unit I – Two port network theory
 Two Port Networks Scattering Parameters

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RFME – Unit I – Two port network theory
 Formulation of S Parameters for
a two port network

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RFME – Unit I – Two port network theory
 CO1:Analyze the given High Frequency
network using S parameters.

Distinguish Low frequency and

LO1 High frequency circuit analysis

Analyze the microwave

LO2 network using S parameters.

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters) – Introduction

The background needed for the study of S-parameters

consists of two fundamental topics:

1. Two-port networks &

2. Reflections on transmission lines

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RFME – Unit I – Two port network theory
1. Two-Port Network Theory:
➢ Two-port network theory is a circuit analysis technique - different from the majority of other
approaches.

➢ Most circuit analysis approaches (Kirchhoff’s laws, node voltage/mesh current methods,
superposition, and others) provide a way of calculating voltages and currents anywhere in
the circuit.

➢ Thevenin or Norton theorems allow us to obtain an equivalent circuit model with respect to
the specified pair of terminals (usually the output terminals, or the output port) of the
network.

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines:
➢ Review of the reflections at the load and at the source, and then proceed
to the reflections at a discontinuity along the transmission line.

(a) Transmission line circuit and forward wave (b) Reflection at the load

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
➢ The voltage of the reflected wave is related to the voltage of the incident
wave by

➢ Where is the voltage reflection coefficient at the load, given by,

➢ The total voltage at the load is the sum of the incident voltage and the
reflected voltage. When the load is matched to the transmission line the
reflection coefficient is zero, and therefore there is no reflected voltage.

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
➢ When the line is not matched at the load, a reflected wave, 𝑉 ^− is created
and travels back to the source. Upon the arrival at the source this wave gets
−+
reflected again, creating a forward voltage wave 𝑉 ^

✓ So, now at the source

𝑉 ^− is the incident
wave from load and
−
𝑉 ^ + is the reflected
wave

(c) Reflection at the source

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
−+
➢ The voltage of the reflected wave, 𝑉 ^ is related to the voltage of the
incident wave, 𝑉 ^− by,

➢ where, is the voltage reflection coefficient at the source, given by,

➢ When the source is matched to the transmission line, the reflection

coefficient is zero, and therefore there is no reflected voltage at the source.

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
➢ Reflections along a transmission line discontinuity: Discontinuity along a
transmission line can be caused by many different factors.

➢ The easiest case to consider is when the characteristic impedance of the

transmission line changes (from 𝑍 ^ 𝑐1 to 𝑍 ^ 𝑐2 )

(c) Reflections at a discontinuity

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
➢ When the incident wave traveling on transmission line 1 arrives at the
junction it creates a reflected wave and a transmitted wave.

➢ The voltage of the reflected wave is related to the voltage of the incident
wave by,

➢ where, is the voltage reflection coefficient, given by,

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RFME – Unit I – Two port network theory
2. Reflections on transmission lines – Contd..
➢ The voltage of the transmitted wave is related to the voltage of the incident
wave by,

➢ where, is the voltage transmission coefficient given by

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢ To characterize high-frequency circuits we use S parameters which relate traveling
voltage waves that are incident, reflected and transmitted when a two-port
network is inserted into a transmission line.

Traveling waves impinging on:

(a) port 1 (b) port 2

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters) - Introduction
➢ S-parameters describe the input-output relationship between ports
(or terminals) in an electrical system. It also describes the response
of an N-port network to signal(s) incident to any or all of the ports

➢ S-parameters are complex numbers, having real and imaginary parts

or magnitude and phase parts

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters) - Introduction
➢ S-parameters are displayed in a matrix format (Scattering Matrix),
with the number of rows and columns equal to the number of ports.

➢ The scattering matrix relates the voltage waves incident on the ports
to those reflected from the ports.

➢ The scattering parameters can be calculated using network analysis

techniques or it can be measured directly with a Vector Network
Analyzer
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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
Definition:
➢ The scattering matrix of an m-port junction is a square matrix of a
set of elements which relate incident and reflected waves at the
port of the junction.

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
Characteristics of S-matrix:
➢ It describes any passive microwave component.

➢ It exists for linear passive and time invariant networks.

➢ It gives complete information on reflection and transmission

coefficients

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢Here are the S-matrices for one, two and three-port networks:
(𝑺𝟏𝟏 ) ---- (one - port)

𝑺𝟏𝟏 𝑺𝟏𝟐
---- (two - port)
𝑺𝟐𝟏 𝑺𝟐𝟐

𝑺𝟏𝟏 𝑺𝟏𝟐 𝑺𝟏𝟑

𝑺𝟐𝟏 𝑺𝟐𝟐 𝑺𝟐𝟑 ---- (three - port)
𝑺𝟑𝟏 𝑺𝟑𝟐 𝑺𝟑𝟑
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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢ For the S-parameter Sij the j subscript stands for the port that is
excited (the input port), and the "i" subscript is for the output port.

➢ Thus 𝑆12 refers to the ratio of the amplitude of the signal that
reflects from port 1 to the amplitude of the signal incident on port
2.

➢ 𝑺𝟐𝟏 means the response at port 2 due to a signal at port 1.

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RFME – Unit I – Two port network theory
S Parameters for a two port network
➢ Let's examine a two-port network

Traveling waves impinging on:

(a) port 1 (b) port 2

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RFME – Unit I – Two port network theory
S Parameters for a two port network
➢ Two-port network
➢ The incident waves (which give rise to
the reflected and transmitted waves)
can be impinging on either port 1 or
port 2.
➢ Let’s denote the wave incident on port 1
and port 2 by a1 and a2, respectively.
➢ These waves give rise to the reflected Incident and reflected waves at
port 1 & port 2
waves, b1 and b2 respectively.
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RFME – Unit I – Two port network theory
S Parameters for a two port network
➢ A scattering matrix represents the relationship between the
parameters 𝑎𝑛 ’s (incident wave amplitude) and 𝑏𝑛 ’s (reflected wave
amplitude)
𝑎𝑛 = 𝑣𝑛 + / 𝑍0 ; 𝑏𝑛 = 𝑣𝑛 − / 𝑍0

➢ where 𝑣𝑛 + 𝑎𝑛𝑑 𝑣𝑛 − represent incident and outgoing waves along

the line connected to the nth port and

➢ 𝑍0 characteristic impedance of the line.

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RFME – Unit I – Two port network theory
S Parameters for a two port network
➢ The incident and reflected waves are used to define s parameters for
a two port network.
➢ The linear equations describing the two-port network in terms of the
S parameters are
𝑏1 = 𝑆11 𝑎1 + 𝑆12 𝑎2 (1)

𝑏2 = 𝑆21 𝑎1 + 𝑆22 𝑎2 (2)

➢ That is, s parameters define the reflected wave at a particular port in
terms as of the incident wave at each port.
➢ Using Matrix notation, [b] = [S] [a]
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RFME – Unit I – Two port network theory
S parameters for a two port network

Typical two-port circuit application:

a) Circuit driven at port 1 and terminated by a load at port 2,
b) Circuit driven at port 2 and terminated by a load at port 1
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RFME – Unit I – Two port network theory
S parameters for a two port network
➢ 𝑆11 = 𝑏1 /𝑎1 | 𝑎2 = 0 => reflection coefficient at port 1 when the
incident wave on port 2 is zero, which means that port 2 should be
terminated in matched load to avoid reflections (𝑎2 =0).

➢ 𝑆22 = 𝑏2 /𝑎2 | 𝑎1 =0 => reflection coefficient at port 2 when the

incident wave on port 1 is zero, which means that port 1 should be
terminated in matched load to avoid reflections (𝑎1 =0).

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RFME – Unit I – Two port network theory
S parameters for a two port network
➢𝑆12 = 𝑏1 /𝑎2 | 𝑎1 =0 => transmission coefficient from port 2
to port 1, with port 1 terminated in matched load

➢𝑆21 = 𝑏2 /𝑎1 | 𝑎2 =0 => transmission coefficient from port 1

to port 2, with port 2 terminated in matched load

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RFME – Unit I – Two port network theory
S parameters for a two port network

a) Circuit for determining 𝑆11 or 𝑆21

b) Alternative circuit for determining 𝑆11

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RFME – Unit I – Two port network theory
S parameters for a two port network

a) Circuit for determining 𝑆22 or 𝑆12

b) Alternative circuit for determining 𝑆22

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RFME – Unit I – Two port network theory
S Parameters for a two port network

Port 1 Port 2

Reflection/Input = Reflection coefficient = 𝑺𝟏𝟏 , 𝑺𝟐𝟐

Transmission/Input = Transmission coefficient = 𝑺𝟏𝟐 , 𝑺𝟐𝟏
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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢ The incident and reflected amplitudes of microwaves at
any port are used to characterize a microwave circuit.

➢ The amplitudes are normalized in such a way that the

square of any of these variables gives the average power in
that wave

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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢ For an n port network,
1 2
Input power at the nth port, 𝑃𝑖𝑛 = 𝑎𝑛
2

1 2
Reflected power at the nth port, 𝑃𝑟𝑛 = 𝑏𝑛
2

➢ where 𝑎𝑛 and 𝑏𝑛 represent the normalized incident wave amplitude

and normalized reflected wave amplitude at the nth port.
➢ The total or net power flow into any port is given by,
2
𝑃 = 𝑃𝑖 − 𝑃𝑟 = 1/2( 𝑎 − 𝑏 2)
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RFME – Unit I – Two port network theory
S Parameters (Scattering Parameters)
➢ We can relate the generalized s parameters to the powers as
follows:

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RFME – Unit I – Two port network theory
S parameters for an N port network

➢ For an N port network shown,

➢ The ports may be any type of
transmission line
➢ At a specific point on the nth port, a
terminal plane, 𝑡𝑛 is defined along
with equivalent voltage and currents
for the incident ( 𝑉𝑛 + , 𝐼𝑛 + ) and
reflected (𝑉𝑛 − , 𝐼𝑛 − ) waves.
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RFME – Unit I – Two port network theory
S parameters for an N port network
➢ At the 𝑛𝑡ℎ terminal plane, the total
voltage and current is given by,
𝑽𝒏 = 𝑽𝒏 + + 𝑽𝒏 −
𝑰𝒏 = 𝑰𝒏 + − 𝑰𝒏 −
➢ 𝑉𝑛 + is the amplitude of the voltage wave
incident on port n and
➢ 𝑉𝑛 − is the amplitude of the voltage wave
reflected from port n.

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RFME – Unit I – Two port network theory
S parameters for an N port network
• The Scattering matrix, or [S] matrix is defined in relation to
these incident and reflected voltage waves as,

V1 − S11 S1N V1 +
⋯
V2 − S21 S2N V2 +
=
⋮ ⋮ ⋱ ⋮ ⋮
VN − SN1 ⋯ SNN VN +

or V− = S V+

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RFME – Unit I – Two port network theory
S parameters for an N port network
• A specific element of the [S] matrix can be determined as,

Vi −
Sij = + , Vk + = 0 for k ≠ j
Vj
• The Scattering matrix or [S] matrix for n-port network,

𝑏1 𝑆11 𝑆1𝑁 𝑎1
⋯ 𝑎2
𝑏2 𝑆21 𝑆2𝑁
= ⋮
⋮ ⋮ ⋱ ⋮
𝑏𝑁 𝑆𝑁1 ⋯ 𝑆𝑁𝑁 𝑎𝑁
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RFME – Unit I – Two port network theory
Losses in Microwave Networks
• In a 2 port network if power fed at port 1 is 𝑃𝑖 , Power reflected at
the same port is 𝑃𝑟 and the output power at port is 𝑃𝑜 then following
losses are defined in terms of S-parameters.

𝑃𝑖 𝑎1 2
➢ Insertion loss (dB) = 10 log = 10 log
𝑃𝑜 𝑏2 2

1 1
= 20 log = 20 log
𝑆21 𝑆12

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RFME – Unit I – Two port network theory
Losses in Microwave Networks
𝑃𝑖 − 𝑃𝑟
➢ Transmission loss or attenuation (dB) = 10 log
𝑃𝑜

1 − 𝑆11 2
= 10 log
𝑆12 2

𝑃𝑖 1
➢ Reflection loss (dB) = 10 log = 10 log
𝑃𝑖 − 𝑃𝑟 1 − 𝑆11 2

𝑃𝑖 1 1
➢ Return loss (dB) = 10 log = 20 log = 20 log
𝑃𝑟 Γ 𝑆11

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RFME – Unit I – Two port network theory
 Course Outcome
Analyze the given High Frequency network using S
CO1
parameters.

Learning Outcome
LO2 Analyze the microwave network using S parameters.

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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network

b) Symmetry of [S] for a reciprocal network

c) Unitary property for lossless junction

d) Phase shift property

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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network

b) Symmetry of [S] for a reciprocal network

c) Unitary property for lossless junction

d) Phase shift property

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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network:

❖ For an ideal N-port network with matched termination,

𝑆𝑖𝑖 = 0 , since there is no reflection from any port.
Therefore under perfect matched conditions the diagonal
elements of [S] are zero.

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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network

b) Symmetry of [S] for a reciprocal network

c) Unitary property for lossless junction

d) Phase shift property

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RFME – Unit I – Two port network theory
Properties of S Parameters:
b) Symmetry of [S] for a reciprocal network
➢ A reciprocal device has the same transmission characteristics in
either direction of a pair of ports and is characterized by a symmetric
scattering matrix,
𝑆𝑖𝑗 = 𝑆𝑗𝑖 i ≠ j
➢ which results in,
[𝑆]𝑡 = [𝑆]
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b) Symmetry of [S] for a reciprocal network
Proof:-
➢ In a multiport network the total voltage and current at the nth port can be written
as, 𝑉𝑛 = 𝑉𝑛 + + 𝑉𝑛 − (1)
𝐼𝑛 = 𝐼𝑛 + − 𝐼𝑛 − = 𝑉𝑛 + − 𝑉𝑛 − (2)
➢ By adding (1) & (2) we obtain
1
𝑉𝑛 + = (𝑉𝑛 + 𝐼𝑛 )
2

➢Impedance matrix equation,

1
𝑉+ = ( 𝑍 + 𝑈 )[𝐼] (3)
2

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b) Symmetry of [S] for a reciprocal network: Proof:-
➢Subtracting (2) from (1)
1
𝑉𝑛 − = (𝑉𝑛 − 𝐼𝑛 )
2

➢Impedance matrix equation,

1
𝑉− = ( 𝑍 − 𝑈 )[𝐼] (4)
2
➢where, [U] is the identity matrix
2 𝑉+
➢From (3) 𝐼 = = 2 𝑉 + ( 𝑍 + 𝑈 )−1 (5)
𝑍+𝑈

➢Substitute (5) in (4)

𝑉 − = ( 𝑍 − 𝑈 )( 𝑍 + 𝑈 )−1 𝑉 + (6)

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b) Symmetry of [S] for a reciprocal network: Proof:-
𝑉−
= ( 𝑍 − 𝑈 )( 𝑍 + 𝑈 )−1 = [S]
𝑉+

[S] = ( 𝑍 − 𝑈 )( 𝑍 + 𝑈 )−1 (7)

➢Taking transpose of (7)
[𝑆]𝑡 = ( 𝑍 − 𝑈 )𝑡 {( 𝑍 + 𝑈 )−1 }𝑡 (8)
➢[U] is a diagonal matrix, so [𝑈]𝑡 = 𝑈 , and if the network is reciprocal , [Z] is
symmetric, so that [𝑍]𝑡 = 𝑍
➢(8) reduces to, [𝑆]𝑡 = 𝑍 − 𝑈 𝑍 + 𝑈 −1
(9)
➢When comparing (7) & (9),
[S] = [𝑆]𝑡 {Hence proved}
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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network

b) Symmetry of [S] for a reciprocal network

c) Unitary property for lossless junction

d) Phase shift property

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RFME – Unit I – Two port network theory
Properties of S Parameters:
c) Unitary property for lossless junction:
➢ For any lossless network the sum of the products of each
term of any one row or of any one column of the S-matrix
multiplied by its complex conjugate is unity.
𝑁 𝑁

෍ 𝑆𝑘𝑖 𝑆𝑘𝑗 ∗ = 1, 𝑓𝑜𝑟 𝑖 = 𝑗 ෍ 𝑆𝑘𝑖 𝑆𝑘𝑗 ∗ = 0, 𝑓𝑜𝑟 𝑖 ≠ 𝑗

𝑘=1 𝑘=1

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RFME – Unit I – Two port network theory
c) Unitary property for lossless junction: Proof:-
1 1
➢ 𝑉 + 𝑡 𝑉 + ∗ represents the total incident power, while 𝑉 − 𝑡
𝑉− ∗
represents the
2 2
total reflected power
1 1
➢Therefore, 𝑃𝑎𝑣 = 𝑉+ 𝑡
𝑉+ ∗
− 𝑉− 𝑡
𝑉− ∗
=0 (2)
2 2

➢So for a lossless junction, the incident and reflected powers are equal:
𝑉+ 𝑡
𝑉+ ∗
= 𝑉− 𝑡
𝑉− ∗
(3)
➢Using [𝑉 − ] = 𝑆 [𝑉 + ] in (3)
𝑉+ 𝑡
𝑉+ ∗
= 𝑉 + 𝑡 [𝑆]𝑡 [𝑆]∗ 𝑉 + ∗

=> 𝑉+ 𝑡 𝑉+ ∗ = 𝑉+ 𝑡 𝑉 + ∗ [𝑆]𝑡 [𝑆]∗

𝑉+ 𝑡 𝑉+ ∗
=> = [𝑆]𝑡 [𝑆]∗ (4)
𝑉+ 𝑡 𝑉+ ∗
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RFME – Unit I – Two port network theory
c) Unitary property for lossless junction: Proof:-
𝑉+ 𝑡 𝑉+ ∗
= [𝑆]𝑡 [𝑆]∗ ,
𝑉+ 𝑡 𝑉+ ∗

➢ for nonzero 𝑉 + , => [𝑆]𝑡 [𝑆]∗ = [U] => [𝑆]∗ = {[𝑆]𝑡 }−1 (5)
➢ A matrix that satisfies the condition (5) is called a unitary matrix.
➢ The matrix equation (5) can be written in summation form as
∗
σ𝑁
𝑘=1 𝑘𝑖 𝑘𝑗 = 𝛿𝑖𝑗 , 𝑓𝑜𝑟 𝑎𝑙𝑙 𝑖, 𝑗
𝑆 𝑆 (6)
➢ where 𝛿𝑖𝑗 = 1 if i = j and 𝛿𝑖𝑗 = 0 if i ≠ j, the Kronecker delta symbol.
∗
➢ If i = j, (6) reduces to σ𝑁
𝑘=1 𝑆𝑘𝑖 𝑆𝑘𝑖 = 1 (7)
∗
➢ while i ≠ j, (6) reduces to σ𝑁
𝑘=1 𝑘𝑖 𝑘𝑗 = 0
𝑆 𝑆 (8)

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RFME – Unit I – Two port network theory
c) Unitary property for lossless junction: Proof:-
∗
σ𝑁 𝑆 𝑆
𝑘=1 𝑘𝑖 𝑘𝑖 = 1 , i = j (7)

➢ (7) states that the dot product of any column of [S] with the conjugate of that
column gives unity.

∗
σ𝑁
𝑘=1 𝑘𝑖 𝑘𝑗 = 0, i ≠ j
𝑆 𝑆 (8)

➢ (8) states that the dot product of any column with the conjugate of a different
column gives zero (orthogonal).
{Hence Proved}

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RFME – Unit I – Two port network theory
Properties of S Parameters:
a) Zero diagonal elements for perfect matched network

b) Symmetry of [S] for a reciprocal network

c) Unitary property for lossless junction

d) Phase shift property

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RFME – Unit I – Two port network theory
Properties of S Parameters:
d) Phase shift property:
➢ Complex S parameters of a network are defined with respect to the
positions

➢ S parameters relate amplitudes (magnitude and phase) of traveling

waves incident on and reflected from a microwave network, phase

reference planes must be specified for each port of the network.

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RFME – Unit I – Two port network theory
d) Phase shift property:
➢ Original terminal planes are at 𝑧𝑛 = 0 for
the 𝑛𝑡ℎ port, where 𝑧𝑛 - arbitrary coordinate
measured along the transmission line
feeding the nth port.
➢ The scattering matrix for the network with
this set of terminal planes is denoted by [S].
➢ For a new set of reference planes defined at

Shifting reference planes for an N

𝑧𝑛 = 𝑙𝑛 for the 𝑛𝑡ℎ port, the new scattering
port Network matrix be denoted as [S’].
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RFME – Unit I – Two port network theory
d) Phase shift property:
➢ The incident and reflected port voltages

[𝑉 − ] = 𝑆 [𝑉 + ] (1)

[𝑉 ′− ] = 𝑆′ [𝑉 ′+ ] (2)
where,
❖ the unprimed quantities are referenced to the original terminal
planes at 𝑧𝑛 = 0 and
❖ the primed quantities are referenced to the new terminal planes at
𝑧𝑛 = 𝑙𝑛
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RFME – Unit I – Two port network theory
d) Phase shift property:
➢ From the theory of traveling waves on lossless transmission lines we
can relate the new wave amplitudes to the original ones as,
𝑉𝑛 ′+ = 𝑉𝑛 + 𝑒 𝑗𝜃𝑛 (3)
𝑉𝑛 ′− = 𝑉𝑛 − 𝑒 −𝑗𝜃𝑛 (4)
➢ where 𝜃𝑛 = 𝛽𝑛 𝑙𝑛 is the electrical length of the outward shift of the
reference plane of port n
➢ (3) can be written as, => 𝑉𝑛 + = 𝑉𝑛 ′+ 𝑒 −𝑗𝜃𝑛 (5)
➢ (4) can be written as, => 𝑉𝑛 − = 𝑉𝑛 ′− 𝑒 𝑗𝜃𝑛 (6)

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RFME – Unit I – Two port network theory
d) Phase shift property:
𝑒 −𝑗𝜃1 ⋯ 0
𝑒 −𝑗𝜃2 0
➢ (5) in matrix form, => [𝑉𝑛 + ] = [𝑉𝑛 ′+ ] 0 (7)
⋮ ⋱ ⋮
0 ⋯ 𝑒 −𝑗𝜃𝑁
𝑒 𝑗𝜃1 ⋯ 0
𝑗𝜃
𝑒 2
➢ (6) in matrix form, => [𝑉𝑛 − ] = [𝑉𝑛 ′− ] 0 0 (8)
⋮ ⋱ ⋮
0 ⋯ 𝑒 𝑗𝜃𝑁

➢ Substitute (7) & (8) in (1), (for 𝑛𝑡ℎ port)

[𝑉 − ] = 𝑆 [𝑉 + ] (1)
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RFME – Unit I – Two port network theory
d) Phase shift property:
𝑒 𝑗𝜃1 ⋯ 0 𝑒 −𝑗𝜃1 ⋯ 0
0 𝑒 𝑗𝜃2 0 ′− 0 𝑒 −𝑗𝜃2 0
[𝑉 ] =[S] [𝑉 ′+ ] (7)
⋮ ⋱ ⋮ ⋮ ⋱ ⋮
0 ⋯ 𝑒 𝑗𝜃𝑁 0 ⋯ 𝑒 −𝑗𝜃𝑁
𝑒 −𝑗𝜃1 ⋯ 0 𝑒 −𝑗𝜃1 ⋯ 0
−𝑗𝜃
𝑒 2 −𝑗𝜃
𝑒 2
′−
[𝑉 ] = 0 0 [S] 0 0 [𝑉 ′+ ] (8)
⋮ ⋱ ⋮ ⋮ ⋱ ⋮
0 ⋯ 𝑒 −𝑗𝜃𝑁 0 ⋯ 𝑒 −𝑗𝜃𝑁
➢On comparing (8) & (2) [𝑉 ′− ] = 𝑆′ [𝑉 ′+ ] (2)
𝑒 −𝑗𝜃1 ⋯ 0 𝑒 −𝑗𝜃1 ⋯ 0
−𝑗𝜃
𝑒 2 −𝑗𝜃
𝑒 2
𝑆′ = 0 0 [S] 0 0 (9)
⋮ ⋱ ⋮ ⋮ ⋱ ⋮
0 ⋯ 𝑒 −𝑗𝜃𝑁 0 ⋯ 𝑒 −𝑗𝜃𝑁
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RFME – Unit I – Two port network theory
d) Phase shift property:

𝑒 −𝑗𝜃1 ⋯ 0 𝑒 −𝑗𝜃1 ⋯ 0
0 𝑒 −𝑗𝜃2 0 𝑒 −𝑗𝜃2 0
𝑆′ = [S] 0 => the desired result
⋮ ⋱ ⋮ ⋮ ⋱ ⋮
0 ⋯ 𝑒 −𝑗𝜃𝑁 0 ⋯ 𝑒 −𝑗𝜃𝑁

Note:

𝑆𝑛𝑛 ′ = 𝑒 −2𝑗𝜃𝑛 𝑆𝑛𝑛 means, the phase of 𝑆𝑛𝑛 is shifted by twice the electrical
length of the shift in terminal plane n, because the wave travels twice over this length
upon incidence and reflection.
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RFME – Unit I – Two port network theory
 Components at High
Frequencies

30-Nov-23 RFME – Unit I – Two port network theory 78

RF Transceiver

Board Design Techniques of

Components such as Interconnects,
PA, LNA, Filter etc. at Cellular
Frequency

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RFME – Unit I – Two port network theory
What do we mean by distributed?

• Example – Inductor
Low frequency (Lumped) High Frequency (Distributed)

Z R Z
j L ?
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RFME – Unit I – Two port network theory
RF Behavior of Passive Components

✓ Why do inductors, capacitors, and resistors behave differently

at Radio Frequency?
✓ What is skin effect?

✓ Equivalent Circuit Model?

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RFME – Unit I – Two port network theory
RF Behavior of Passive Components (contd.)
For conventional AC circuit analysis:

• R is considered frequency independent

• Ideal Inductor (L) possesses an impedance 𝑋𝐿=𝑗𝜔𝐿)
• Ideal capacitor (C) possesses an impedance 𝑋𝐶=1/𝑗𝜔𝐶)

Capacitor behaves as open circuit at DC and

low frequency whereas an Inductor behaves as
short circuit at DC and low frequencies

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RFME – Unit I – Two port network theory
RF Behavior of Resistors
At low frequency:

• Resistances, inductances, and capacitances are

formed by wires, coils, and plates etc.
• Even a single wire or a copper line on a PCB
possesses resistance and inductance.
• This cylindrical copper conductor has a DC
resistance:

Length of
l
RDC = 2 cylinder
 a cond

Radius of cylinder conductivity

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RFME – Unit I – Two port network theory
RF Behavior of Resistors (contd.)

• At DC, current flows uniformly distributed

over the entire conductor cross-sectional area.
• At AC, the alternating charge carrier flow
establishes a magnetic field that induces an
electric field (Faraday’s Law) whose
associated currenmt density opposes the
initial current flow → this effect is very
strong at the center (r=0) where the
impedance is substantially increased → as a
result the current flow resides at the outer
periphery with the increasing frequency.
I
DC Current Density: J =  a2
Skin Effect

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RFME – Unit I – Two port network theory
RF Behavior of Resistors (contd.)
• The current density at AC is given a −r 
exp  −(1 + j)
pI
Jz = 
by: 2 aj r   

1
=
p = − j cond
2
f  cond
Skin Depth

• 𝐽𝑧 drops with decrease in 𝑟 (proximity to the center)

• 𝛿 decreases with increase in frequency (skin depth from periphery
reduces with increased frequency) → means the path for current
conduction remains nearer to the periphery (skin effect) → means,
current density towards center decreases with increase in frequency and
increase in conductivity

30-Nov-23 85
RFME – Unit I – Two port network theory
 RF Behavior of Resistors (contd.)

Lead Solder Seems the Best

for High Frequency

However, copper is still preferred

30-Nov-23 86
RFME – Unit I – Two port network theory
Resistors at High Frequencies

1. Carbon-composition resistors:

• Consists of densely packed dielectric particulates or carbon granules.

• Between each pair of carbon granules is very small parasitic capacitor.
• These parasitics, in aggregate, are significant → primarily responsible for
notoriously poor performance at high frequencies

Equivalent Ckt Model: Lead

Inductance

Combination of
parasitic capacitances
30-Nov-23 87
RFME – Unit I – Two port network theory
Resistors at High Frequencies Equivalent Ckt Model:
2. Wire-wound Resistors: Capacitance
between Windings

L2: lead inductance

L1: inductance of resistive wires
C2: Interlead Capacitance
• Exhibit widely varying impedances over various
frequencies.
Resonant
• The inductor L is much larger here as compared to carbon-
Frequency
composition resistor.
• These resistors look like inductors → impedances will
increase with increase in frequency.
• At some frequency 𝐹𝑟 , the inductance will resonate with
shunt capacitance →leads to decrease in impedance.

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RFME – Unit I – Two port network theory
Resistors at High Frequencies
3. Metal-film Resistors Equivalent Ckt Model:

Lead
Inductance

Ca models charge separation effects and Cb

models interlead capacitance

• Seem to exhibit very good characteristics over frequency.

• Values of L and C are much smaller as compared to wire-wound and carbon-composition
resistors.
• It works well up to 10 MHz → useful up to 100 MHz
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RFME – Unit I – Two port network theory
Resistors at High Frequencies
4. Thin-film Chip Resistors:
• The idea is to eliminate or reduce the stray capacitances
associated with the resistors
• Good enough upto 2 GHz

Protective coat prevents The end contacts are

variations from any required for soldering
environmental interferences purposes

A metal film (usually nichrome) layer is deposited

These electrodes are inserted after trimming the on this ceramic substrate → this layer works as
resistive layer to the desired value resistor

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RFME – Unit I – Two port network theory
Capacitors at High Frequencies

Equivalent Circuit Representation of a capacitor → for a parallel plate

Inductance of the leads and plates
Represents Insulation
Resistance

Accounts for the losses

in the leads

 A =  A At high frequency, the dielectric become lossy i.e., there is

C= 0 r
d d conduction current through it
Then impedance of capacitor becomes a parallel
combination of C and conductance Ge
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RFME – Unit I – Two port network theory
Capacitors at High Frequencies (contd)

Presence of resonance due to

dielectric loss and finite lead wires

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RFME – Unit I – Two port network theory
Capacitors at High Frequencies (contd)

Cross-section of a
single-plate capacitor
connected to the board

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RFME – Unit I – Two port network theory
Inductors at High Frequencies

Equivalent circuit representation of an inductor → coil type

Composite Effect of all the

distributed Rd

Composite Effect of all the

distributed Cd
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RFME – Unit I – Two port network theory
Inductors at High Frequencies (contd)

Presence of
resonance
• Initially the reactance of inductor
follows the ideal but soon departs from it
and increases rapidly until it reaches a
peak at the inductor’s resonant
frequency (𝐹𝑟 ). Why?
• Above Fr, the inductor starts to behave as
a capacitor.

Implement this in HW#0

MATLAB or ADS

30-Nov-23 95
RFME – Unit I – Two port network theory
 Chip inductors

Surface mounted inductors still

come as wire-wound coil →these
are comparable in size to the
resistors and capacitors

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RFME – Unit I – Two port network theory
References:
1. Liao, S.Y., “Microwave Devices & Circuits”, Prentice Hall of India, 2006.

2. Ludwing R and Bogdanov G, “RF Circuit design: Theory and Applications”, Pearson
Education, Inc., 2009.

3. Annapurna Das and Sisir K Das, “Microwave Engineering”, Tata McGraw Hill Inc., 2009

4. David M Pozar, “Microwave Engineering”, 4th Edition, John Wiley and Sons, Inc., 2012.

30-Nov-23of ECE 97
Department RFME – Unit I – Two port network theory
 Thank
you
30-Nov-23 RFME – Unit I – Two port network theory 98