Electrical and Optical Study of Dy doped Bismuth Layer

SrBi2Ta2O9(SBT)
____________________________________________________
A Dissertation submitted in partial fulfilment
FOR THE DEGREE OF MASTER OF SCIENCE IN PHYSICS
Under Academic Autonomy
NATIONAL INSTITUTE OF TECHNOLOGY, ROURKELA
By
Rakesh Kumar Sahu
Roll no:-411PH2116
Under the guidance of
Prof. S. Panigrahi

DEPARTMENT OF PHYSICS
NATIONAL INSTITUTE OF TECHNOLOGY,
ROURKELA-769008
 NATIONAL INSTITUTE OF TECHNOLOGY ROURKELA

CERTIFICATE

This is to certify that the thesis entitled, “Electrical and Optical Study of Dy
doped Bismuth Layer SrBi2Ta2O9 (SBT)” submitted by Rakesh Kumar Sahu in partial
fulfillments for the requirements for the award of Master of Science Degree in Physics
Department at National Institute of Technology, Rourkela is an authentic work carried
out by him under my supervision and guidance.

To the best of my knowledge, the matter embodied in the project has not been
submitted to any other University/Institute for the award of any Degree or Diploma.

Rourkela Prof. S. Panigrahi

Date: Dept. of Physics
National Institute of Technology
Rourkela-769008
 ACKNOWLEDGEMENT
With deep regards and profound respect, I avail this opportunity to express my deep
sense of gratitude and indebtedness to Prof. S. Panigrahi, Department of Physics, National
Institute of Technology Rourkela, for introducing the present project topic and for his
inspiring guidance, constructive criticism and valuable suggestion throughout the project work.
I most gratefully acknowledge his constant encouragement and help in different ways to
complete this project successfully. I would like to acknowledge my deep sense of gratitude
to Prof. Pawan Kumar and Prof. Dillip kumar Pradhan Department of Physics, National
Institute of Technology Rourkela, for allowing me to use the facilities in the laboratory.
I wish to thank all the faculty members & staffs of Department of Physics for their support
and help during the project. It give me great pleasure to express my heartfelt gratitude to the
laboratory mate Mr. V. Senthil, Mr. Rakesh Muduli, Mr. Ranjit Pattanayak ,Ms. Priyambada
Nayak, Mr. Subrat Kumar Kar, Ms. Sridevi Swain and Mr. Jyoti Prakash Dhal (Chem)who have
made it so easy to work in the laboratory by providing me with an utmost friendly
humorous and amicable atmosphere to work in. Last but not the least; I would like to
express my grateful ness to my parents for their endless support, without which I could not
complete my project work. I would also like to thanks to my friends and all the Ph.D.
students in our physics department for their valuable help.

Rour kela Rakesh Kumar Sahu

Date:
 ABSTRACT:

The two layer Aurivillius compound SrBi2Ta2O9 (SBT) and SrBi2-xDyxTa2O9

(x=0.025, 0.05, 0.1) was synthesized by using a solid state sintering method. The
X-ray diffraction (XRD) analysis revealed that the dysprosium substituted ceramic
SrBi2Ta2O9 have a pure two-layer Aurivillius type structure. The effects of
Dysprosium oxide on the microstructure, ferroelectric, dielectric and optical
properties of the ceramics were investigated. Dy doping is found to be significantly
affect on the structural and physical properties of SBT. The dielectric constant (Ԑ)
and transition temperature (Tc) of Dy-doped samples was found to be decrease
with increase of Dy content. Well-developed P (polarization)-E (Electric field)
hysteresis loops were observed for all the samples and also the band-gap (Eg) of
this sample was verify by UV-VIS spectrophotometer.
 CONTENTS

CHAPTER 1 Page
no:-
1.0 Introduction 1
1.1 Piezoelectricity 1
1.2 Pyroelectricity 2
1.3 Ferroelectricity 2
1.4 Origin of Ferroelectricity in Crystal 3
1.5 Dielectrics 4
1.6 Bismuth layer Ferroelectric structure 6
1.7 Relaxor Ferroelectrics 7
1.8 Literature Survey 8

CHAPTER 2

2.0 Experimental Techniques 10

2.1 Synthesis in Solid State Route 10
2.2 Characterization Techniques 12
2.2.1 X-Ray Diffraction Study 12
2.2.2 Scanning Electron Microscopy 13
2.2.3 Dielectric Study 14

2.2.4 Hysteresis Study 15

2.2.5 UV-VIS Spectroscopy Study 15

CHAPTER 3

3.0 Result and Discussion 17

3.1 XRD analysis 17

3.2 SEM analysis 19

3.3 Dielectric analysis 20

3.4 P-E Loop analysis 22

3.5 UV-VIS analysis 23

CHAPTER 4

4.1 Conclusion 24

4.2 References 25

List of Fig.-
Fig.1 P-E Loop 3
Fig.2 Classification of Crystal Classes 4
Fig.3 Types of Polarization 6
Fig.4 Comparison of Normal to Relaxor Ferroelectrics 7
Fig.5 Flowchart of SBT Synthesis 11
Fig.6 Flowchart of SBTDY Synthesis 12
fig.7 Diffraction of X-Ray by Atomic Plane 13
Fig.8 Mechanism of Scanning Electron Microscopy 14
Fig.9 Hysteresis behavior of Ferroelectric Material 15
Fig.10 UV-VIS Spectroscopy 16
Fig.11 XRD of SrBi2Ta2O9 17
Fig.12 XRD of SBT with Dy doping 18
Fig.13 SEM Image of SBT and SBTDY 19
Fig.14 Dielectric Constant Comparision of SBT and SBTDy 20
Fig.15 Tangent Loss analysis of SBT and SBTDy 21
Fig.16 P-E Loop analysis of SBT and SBTDy 22
Fig.17 UV-VIS Analysis of SBT and SBTDy 23
 Chapter-1

1 Introduction:-
The ferroelectric materials are technologically an important class of material that
shows a variety of phenomena. These materials have high permittivity, high
piezoelectric and pyroelectric coefficient, electro-optic properties, tunability of
permittivity, switching of polarization.
These properties are very useful in the application of IR detector, piezo sensors,
actuators, nonvolatile ferroelectric memory, DRAM, Decoupling capacitors,
display, shutter, phase shifter, high Q resonators.

1.1Piezoelecticity:-

Some materials possess the ability to produce electricity by applying mechanical

stress. This effect is known as piezoelectric effect. The stress can also be
developed by hitting or twisting the material by deforming the crystal lattice
without fracturing called as direct piezoelectric effect. Piezoelectric materials also
show a reverse or converse effect, where the geometric strain (deformation) can
produced by the application of a voltage. Both the direct and converse
piezoelectric effects are expressed in tensor notation as:-

Pi=dijkαjk(for direct piezoelectric effect)

βij= dijkEk(for converse piezoelectric effect)

For direct piezoelectric effect

Where Pi = polarization generated along the i– axis in response to the applied

stress,

dijk= piezoelectric coefficient.

And for the converse effect

βij= strain generated in particular orientation of the crystal up on the application

of electric field along the k – axis.

1
1.2Pyroelectricity:-

Certain crystals produce electric polarity by a change of temperature. Also certain

dielectric (electrically non-conducting) crystals develop an electric polarization
(dipole moment per unit volume) up on uniform temperature change. In crystal this
piezoelectric effect requires lack a center of symmetry and a polar directions (i.e., a
polar axis) along which charge carrier reached the surface. However, when the
temperature of the crystal is raised or lowered, the polarization changes. This
requirement is fulfilled for 10 out of 32 crystal classes. Some examples of
pyroelectric material are lithium sulfate monohydrate, tourmaline, barium titanate,
and cane sugar.

Pyroelectrics materials are used in a broad spectrum of scientific and technical

applications. The most infrared radiation detectors and sensors contain
pyroelectric material. These are also used to measure the power generated by a
radiation source i.e. in radiometry, or the temperature of a remote hot body i.e. in
pyrometry. Other applications of pyroelectricity are in pyroelectric plate, solar
energy conversion, refrigeration, information storage, and solid-state science.

1.3Ferroelectricity:-

Some crystal possesses reversible spontaneous polarization as exhibited by a

dielectric hysteresis loop are known as ferroelectric crystal. Uniform polarization
region in ferroelectric crystal are called ferroelectric domains where all dipoles
are aligned in same direction within the domain. The domains in a crystal are
separated by interfaces called domain walls. By applying very strong field one can
align domain polarization in single direction, known as domain switching. All
ferroelectric materials are pyroelectric in nature, but the reverse is not true. Below
a certain temperature called transition temperature or Curie temperature, all
ferroelectric and pyroelectric materials are polar and possess a spontaneous
polarization (electric dipole moment). Above the Curie temperature the non-polar
phase encountered, known as the paraelectric phase. The direction of the
spontaneous polarization conforms the crystal symmetry of the material, while the
re-orientation of the spontaneous polarization is a result of atomic displacements
in crystals. The spontaneous polarization is greatest in magnitude at temperatures
well below the Curie temperature.

2
 The ferroelectric crystal shows the hysteresis loop (i.e. is shown in fig. 1). As the
applied electric field strength is increased, the domains start to align in the
positive direction giving rise to a rapid increase in the polarization. At very high
field, the polarization reaches a saturation value (Ps). But the polarization does not
fall to zero when the external field is removed. At zero external field, still some of
the domains remain aligned in the positive direction. This polarization is called
remnant polarization (Pr).to make polarization to zero. The external field needed
to reduce the Pr is called the coercive field strength (Ec). If the field is further
increased to more in negative value, the direction of polarization flips and a
hysteresis loop is obtained. The spontaneous polarization Ps is obtained by
extrapolating the curve onto the polarization axes.

Fig1. P-E Loop or Hysteresis Loop

1.4 Origin of ferroelectric in crystal:-

All Crystal can be divided into 32 possible crystal classes (i.e. point groups), out of
which 11 are Centro symmetric and thus they cannot exhibit polar properties. The
remaining 21 are lack of Centro symmetry and thus they possess one or more polar
axes. Among these, 20 classes are piezoelectric, the one exception being cubic class
(Fig 2). Piezoelectric crystals have the property that the application of mechanical
stress induces polarization, and conversely, the application of an electric field
produces mechanical deformation. Of the 20 piezoelectric classes, 10 have a unique

3
polar axis and thus are spontaneously polarized, i.e. polarized in the absence of an
electric field. Crystals belonging to these 10 classes are called pyroelectric. The
intrinsic polarization of pyroelectric crystals is often difficult to detect experimentally
because of the neutralization of the charges on the crystal surfaces by free charges
from the atmosphere and by conduction within the crystal. However, because the
polarization is a function of temperature, it is often possible to observe the
spontaneous moment in these crystals by changing the temperature, hence the name
Pyroelectrics. Ferroelectric crystals belong to the pyroelectric family, but they also
exhibit the additional property that the direction of the spontaneous polarization can
be reversed by the application of an electric field.

Fig2:-Classification of Crystals Classes

1.5 Dielectrics :-

Dielectrics are material that permits the passage of the electric field. The energy gap
of dielectric is higher than that of semiconductors, so thermally generated charge
carriers are generally absent. So at room temperature dielectric material behaves as
an insulator. But in the presence of electric field charge does not flow through the
4
dielectric material as in a conductor but only slightly shift from their average
equilibrium positions cause polarization. In dielectrics, the charge center shifts
according to the fields causes various type of polarization.

Polarization types:-

1-Electronicpolarization

Polarization arises due to the displacement of electrons with respect to the nuclei
with which they are associated, by the application of an external electric field.

2- Ionic polarization

In an electric field, the ions in ionic crystals feel forces in opposite directions which
give rise to polarization.

3- Orientational / Dipolar polarization,

Materials with built-in dipoles that are independent of each other and rotate
freely gives rise to Dipolar Polarization.

4- Space charge polarization.

Accumulation of charge in the grain boundary leads to space charge polarization in
the material.

5
 Fig3: Types of Polarization

1.6 Bismuth Layer Ferroelectric Structures:-

Layer perovskite StrontiumBismuthTantalate(SBT)is a member of bismuth layer

structure ferroelectric with general formula[Bi2O2]2+[Am-1BmO3m+1]2- .Where
A=Na+,K+,Ba2+,Ca2+,Pb2+,Sr2+,Bi2+larger cations, B=Fe3+,Ti4+,Nb5+,Ta5+,W6+ smaller
cat-ion and m indicates the no. of the corner sharing octahedra forming the
perovskite like slabs.

The crystal structure SBT comprises of pseudo perovskite blogs (SrTa2O7)2- that are
sandwich between (Bi2O2)2-layers.

In SrBi2Ta2O9(SBT)Sr2+occupies the A site of the perovskite andTa5+occupies the B

site of the perovskite and m is equal to 2.
6
1.7 Relaxor Ferroelectrics:-

This type of material possesses slim PE loop with diffuse phase transition. The
temperature at which the dielectric constant is maximum shifts to higher temperature
with increase in frequency. This type of behavior is due to the compositional disorder
by the formation of polar micro regions (PMR).PMR sizes vary and it may follow
distribution at high temperature.as temperature decreases the average size of PMR
increases. The figure below shows the behavior of normal ferroelectric and relaxor
ferroelectric.

Fig4: Comparisons of Normal to Relaxor ferroelectric

7
1.8 Literature Survey:-
In the world of ferroelectric material and its applications in various electronics fields
such as ferroelectric nonvolatile semiconductor memories (FeRAMs),non-volatile
random access memory, sensor, microwave detectors etc. among them Bi-layered
pseudo-perovskite a series of Bi-layered perovskite ABi2B2O9has attracted much
attention due to its excellent fatigue free characteristics in combination with low
leakage current density, good hysteresis behavior, long data retention time and fast
switching voltage behavior. Ferroelectricity having a series of Bi-layered perovskite
ABi2B2O9 was first discovered by Smolenskii. (1961). The general chemical formula
of Bi-layered perovskite is as [Bi2O2]2+ [Am-1BmO3m+1]2- . A = Na+, K+,Ba2+, Ca2+,
Pb2+, Sr2+, Bi3+, : B = Fe3+, Ti4+, Nb5+,Ta5+, W6+, and m = 1 to 6]. SrBi2Ta2O9is a
well-known layered perovskite oxide, where perovskite-type groups[SrTa2O7]2- and
semiconducting layers [Bi2O2]2+are stacked alternately along the pseudo-tetragonal c-
axis. The crystal structure of SBT is orthorhombic at room temperature with space
group A21am (a = 5.531, b = 5.534, c = 25.984 A).

In this paper it is found that spontaneous polarization (Ps) of SrBi 2Ta2O9 is 5.8
µC/cm2 along the a-axis at room temperature, while Ps = 26 µC/cm2 in representative
perovskite ferroelectric of BaTiO3 along the tetragonal c-axis. The dielectric constant
(ϵ) and the specific heat (Cp) of this crystal show very weak. The peak value of the
dielectric constant is only 300atTc, which is two orders smaller than that of BaTiO3
(14, 000). Although SBT has been a key material of ferroelectric memory in recent
years, detailed fundamental mechanism of this ferroelectric phase transition has not
been discussed yet. In SBT, the -O-Ta-O-Ta-O- chain is interrupted by the existence
of semiconducting [Bi2O2]2+ layers, while the strongly correlated -O-Ti-O-Ti-O-
chain plays an important role in the appearance of ferroelectricity in Perovskite
BaTiO3.Many studies were done for ceramics and thin films, but a few for single
crystals. It should be necessary for deep understanding of the ferroelectricity to
investigate the nature of single crystals.

8
In this paper, the temperature dependence of specific heat, lattice constant and soft
mode of SBT single crystal studied. Strontium bismuth tantalate has orthorhombic
crystal structure with space group A21am in ferroelectric phase followed by
tetragonal structure at/above 330 oC with space group I4/mmm inparaelectric phase.
The incorporation of any cations at any of the Sr, Bi-sites or Ta-sites will modify the
crystal structure and symmetry depending on their valance and ionic radii of cations.
Vibrational studies have been used to give the information about the displacements of
the atoms or ions, some of which are related to the polarization of the material and
Raman scattering is a useful tool for exploring the microscopic origin of the
ferroelectricity of materials. Here none of the observations could assign all
the observed Raman and infrared modes also no theoretical calculation of phonons
has been made in SBT in its orthorhombic (A21am) crystal structure. Here it is
investigate the Raman and infrared phonons of SBT using normal coordinate analysis
involving nine stretching and eight bending force constants. The theoretically
obtained values are in very good agreement with the experimental ones. Here an
effort is also made to assign experimental frequencies to their respective optical
phonon modes. The potential energy distribution has also been investigated for
determiningthe significance of contribution from each force constant towardthe
Raman and infrared wavenumbers.

9
 Chapter 2

2.0 Experimental Technique:-

The material is synthesized in solid state reaction route and put for characterization.

2.1 Synthesis in Solid State Route:-

The parent SrBi2Ta2O9 material is synthesized by solid state route by taking

stoichiometric formula in atomic weight percentage method .The reaction is given by

SrCO3 + Bi2O3 + Ta2O5 → SrBi2Ta2O9 + CO2

In case of doping with dysprosium the equation is modified as

SrBi2Ta2O9 + Dy2O3 → SrBi2-xDyxTa2O9

10
Fig: 5- Flow chart of SBT synthesis

11
 Fig.6 Flowchart of SBTDy Synthesis

2.2 Characterization technique:-

For structural properties XRD and SEM were done. For electrical properties P-E loop
and dielectric measurement were done. For optical properties UV-VIS spectroscopy
is done.
2.2.1 X Ray Diffraction Study:-

In atoms, Crystals are regularly arranged in different planes. The inter atomic
distance between the atoms are in the order of0A. X-rays are electromagnetic
radiation having wave length in the range of 10A-1000A.the atomic planes distance
and X-ray wave length are in the same range ,so atoms diffracts X-ray waves but the
electrons scatter Xrays.

12
 Fig7:-Diffraction of X-rays by Atomic Planes
According to Bragg's law: a regular array of atoms gives diffraction pattern when
exposed to a suitable ration EM waves. Constructive or destructive diffraction pattern
are observed in a few specific directions, determined by equation

Here d = spacing between diffracting planes

= incident angle
n = integer, and
λ = wavelength of the beam.

2.2.2 SEM Study:-

SEM is used for the topographical and morphological study of specimen surface. In
SEM, electron beam are generated by thermonically and by applying potential
difference to an electron gun which is fitted with a tungsten filament known as
cathode. Tungsten is used as electron guns because it possesses highest melting point
and lowest vapor pressure among all metals, The electron beam has
an energy ranging from 0.2 keV to 40 keV, is focused by one or two condenser lenses
to a spot about 0.4 nm to 5 nm in diameter, then it passes through pairs of scanning
coils and fall to the sample surface. The scatter and secondary electrons from the
specimens are collected by the detectors then analyzed by computers and final image
is generated.

13
 Fig:-8 Mechanism of scanning electron microscopy

2.2.3 Di-electric study:-

Dielectric constant is measure by using LCR setup .the
C = ԐA/d = Ԑ0Ԑr A/d
Ԑr = C * d/(Ԑ0*A)

Where is the electric permittivity of free space.

The susceptibility of a medium is related to its relative permittivity by

So in the case of a vacuum,

The electric displacement D is related to the polarization density P by

14
 In general, a material cannot polarize instantaneously in response to an applied field.
The more general formulation as a function of time is

2.2.4 Hysteresis Study:-

Hysteresis occurs in ferroelectric material in the response of varying force generated

by applied electric field. The ferroelectric material retain some polarization even in
the absence of external field known as remanent polarization.at higher field the
polarization value saturates and it is known as saturation polarization.to make the
polarization value zero negative field is (Ec)required and this field is called cohesive
field.

Fig9: Hysteresis behavior of ferroelectric material.

2.2.5 UV-VIS Spectroscopy:-

Ultraviolet–visible spectroscopy refers to absorption spectroscopy or reflectance

spectroscopy in the ultraviolet-visible spectral region. Where light in the visible and

15
adjacent near-UV and near-infrared (NIR) ranges. The absorption or reflectance in
the visible range directly affects the perceived color of the chemicals involved to the
sample. In UV-VIS electromagnetic spectrum, molecules undergo electronic
transitions. This is a complementary technique fluorescence spectroscopy where
fluorescence deals with transitions from the excited state to the ground state, while
absorption measures transitions from the ground state to the excited state.

Fig10:-UV-VIS Spectroscopy

Molecules containing π-electrons or non-bonding electrons (n-electrons) can absorb

the energy in the form of ultraviolet or visible light to excite these electrons to higher
anti-bonding molecular orbitals. The more easily excited the electrons (i.e. lower
energy gap between the HOMO and the LUMO), the longer the wavelength of light it
can absorb.

Using the Beer-Lambert law: absorption is calculated

,

16
 Where A = absorbance,
I0= intensity of the incident light at a given wavelength,
I = transmitted intensity,
L = path length through the sample,
c = concentration of the absorbing species,
ε = extinction coefficient

Chapter 3
Result and Discussion

3.1 XRD Analysis:-

(115)

2000

SrBi2Ta2O9
1500
Intensity (a.u)

(0010)

1000
(315)
(224)
(200)

(2210)
(008)

(220)

500
(208)
(006)

(206)
(113)

20 30 40 50 60 70 80


Fig11:- XRD of SrBi2Ta2O9

Fig.11 shows the XRD (JCPDS-81-0552) it was confirms the presence of

SrBi2Ta2O9, the desired composite. The main peaks appears at (115) planes and in
both sides peaks are no uniformly. Some extra peaks were observed which indicates
the presence of impurities in the prepared sample.
17
 SBT 0.025(DY)
4000 SBT 0.1(Dy)
SBT 0.05(Dy)
3500
SBT
3000

2500
Intensity in a.u

SBT0.1Dy
2000

1500
SBT0.05Dy
1000

SBT0.025Dy
500

0 SBT

20 30 40 50 60

2

Fig12:- XRD of SrBi2-xDyxTa2O9 ,(x=0.025,0.05,0.1)

Fig.12 shows the XRD pattern of SrBi2-xDyxTa2O9 ceramic different with value of
x(0.025,0.05,0.1) and the samples are sintered at 12000C . The XRD patterns of the
sample are well consistent with the JCPDS 81-0552[SrBi2Ta2O9].The SBTDy
ceramics shows secondary phase formation of Dy-oxide, which indicates all the Dy
doped SBT samples are pure in phase of bismuth layered structure with m=2.The
crystal symmetry of the sample is orthorhombic with the shifting of the highest
intensity peak toward the higher diffraction angle, because of the lower side of the
Dy3+ with respect to the Bi3+.

18
3.2 SEM Analysis:-

Fig.13 shows the SEM of parent and doped sample, the parent material
SrBi2Ta2O9 have irregular type of grain size. When Dy3+ is doped the grain are
continuously towards homogeneity.

Fig13:-SEM Image of SBT and SBTDy

3.3 Dielectric analysis:-

19
 From the dielectric constant data, T vs. εr increases with increasing of temperature
having two peaks, one at lower temperature and another at high temperature which is
called transition temperature(Tc).At Tc the structure change from Orthorhombic to
Tetragonal.it is also confirms that Tc increases with increasing doping concentration.

550
1MHz SrBi2Ta2O9 (b) 3000
500 100kHz 1MHz
10kHz 2500 1KHz
450 1kHz 10KHz
100KHz
Dielectric constant

2000
400
SBT-0.025Dy
350 1500

r
300 1000

250
500

200
0
0 100 200 300 400 500
150
100 200 o
300 400 Temperature(C)
Temperature ( C)

400

350 100kHz
1kHz 1KHz
300
1MHz
10kHz 1200 SBT 0.1(Dy) 10KHz
250 100kHz 100KHz
200
1MHz 1MHz
r

150
1400
100

50

0
800
0 50 100 150 200 250 300 350 400 450

Temperature (oC)
r

SBT-0.05(Dy)
r

700
400

0
100 200 300 400
100 200 300 400

Temperature ( C)
o Tempreture oC

Fig.14 Dielectric constant comparison of SBT to SBTDy

20
Fig.15 shows the tangent loss of parent to doped sample. The dissipation factor or
tangent loss gradually increasing with temperature for parent and also for doped
sample.

0.06
35

30
0.05
500kHz
250kHz 25 1KHZ
100kHz 10KHZ
0.04 50kHz 20 100KHZ
1MHZ
tan 

tan
15

0.03 SBT-0.025Dy
10

5
0.02
0

0.01 0 100 200 300 400 500

100 200 300 400 TemperatureC)
o
Temperature ( C)

5
1kHz 1 KHz
10 10
4
100kHz
1MHz 10kHz 10KHz
100KHz
3
SBT- 0.1(Dy) 1MHz
8
tan

8 2

6 0 6
0 50 100 150 200 250 300 350 400 450
tan
tan

o
Temperature ( C)

4 4

SBT 0.05(Dy)
2 2

0 0

0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 400

Tempreture (oC)
o
Temperature ( C)

Fig. 15 Tangent loss of SBT and SBTDy

21
3.4 P-E Loop Analysis:-

Fig.16 P-E Loop analysis of SBT and SBTDy

From Polarization (P) vs Electric field (E) is is confirm that for parent material have
well saturation polarization having remanent polarization Pr=4.044 µc/cm2and
saturation polarization Ps=5.8µc/cm2. When Dy3+ content increases both Pr and Ps
value gradually decreases.

Parent SBT SBT-0.025Dy SBT-0.05Dy SBT-0.1Dy

Ps (µc/cm2) 5.8 0.045 0.57 0.071

Pr (µc/cm2) 4.044 0.14 0.065 0.06

Ec (kV/cm) 23 12 5.85 4.7

22
3.5 UV-VIS Analysis:-

From UV-VIS result it is confirmed that as Dy3+ doped content increases the band
gap of the sample gradually decreases. Hence doping concentration increases the
semiconducting properties.

Fig.17 UV-VIS Analysis of SBT and SBTDy

23
 Chapter 4

4.1 Conclusion:-

Dy doped does not change the structure of SBT but the lattice parameters decreases
as the peaks are shifted towards the higher diffraction angle. From structure
morphology study it’s confirm that the grains are increasing uniformly with
increasing of Dy3+ content. Dielectric constant and tangent loss increases with
increase of temperature. The doping concentration increases the semiconducting
behavior of the parent material which is confirmed from the UV-VIS result.

24
4.2 References:-

[1] C. Kittel, “Introduction to Solid State Physics”, Wiley 1956.

[2] Franco Jona and G. Shirane, “Ferroelectric Crystals”, International Series of

Monographs on Solid State Physics, Pergamon Press 1962

[3] W. Kinase, Progress of Theoretical Physics (Kyoto), 13,529(1995)

[4]Y. Takagi, International Conference on Theoretical Physics, Sept, 1953 in Kyoto,

and the discussion by one of the auther (W.K).

[5] J.C. Slater, Phys. Rev, 78,748(1950)

[6] W. Kinase, K. Nakamura and M.Suzuki, Ferroelectrics, 89,255(1989)

[7] Werner Kanzig (1957) “ferroelectrics and antiferroelectrics” in Fredrick seitz,

T.P.Das, David Turnbull, E.L. Hahn. Solid state physics

[8] Safari, R.K.Panda and V.F. Janas, “Key Engineering Materials”122-124, 35-
70,(1996).

[9] Y. Syono, S. I. Akimoto, and K. Kohn, J. Phys. Soc. Jpn. 26, 993(1969).

[10] S.O.Pillai; Introduction to solid state physics, 6th edition

[11] http://mrc.iisc.ernet.in/Research_Areas/01_Perovskite.htm

[12] M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039_1998_.

[13] M. E. Lines and A. M. Glass, “Principles and Applications of Ferroelectrics and

related materials”, Clarendon Press, Oxford, 1979

[14] V. M. Ferreira, F. Azough, J. L. Baptista, and R. Freer, Ferroelectrics, 133

(1992) 127.

[15] www.wikipedia.org

[16] J. Fritesberg, Proc. 4th Int. Meeting on Ferroelectricity, Leningrad (1977).

[17] V.V.Kirollov and V.A. Isupov, Ferroelectrics, 5, (1973) 3.

[18 L.E.Cross, Ferroelectrics 76, (1987) 241.

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[19] Y. Sakabe, Y. Hamaji, and T. Nishiyama, Ferroelectrics, 13 [2] (1992) 133-138.

[20] A. Filippetti and V. Fiorentini, Phys. Rev. Lett. 95, 086405(2005).

[21] J. Ghijsenet al., Phys. Rev. B 38, 11322 (1988).

[22] www.books.google.co.in

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