Green DMP4011SK3Q

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID  100% Unclamped Inductive Switch (UIS) Test in Production
BVDSS RDS(ON) MAX
TC = +25°C  Low On-Resistance
11m @ VGS = -10V -74A  Fast Switching Speed
-40V
19m @ VGS = -4.5V -55A
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Description  PPAP Capable (Note 4)
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
 Case: TO252
 DC-DC Converters  Case Material: Molded Plastic, “Green” Molding Compound. UL
 Power Management Functions Flammability Classification Rating 94V-0
 Backlighting  Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
 Weight: 0.33 grams (Approximate)

TO252 (DPAK)
D
D

G
D
G S S
Top View Top View
Pin-Out Equivalent Circuit

Ordering Information (Note 5)

Part Number Case Packaging
DMP4011SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

= Manufacturer’s Marking
P4011S = Product Type Marking Code
.
H4015S YYWW = Date Code Marking
YY = Year (ex: 19 = 2019)
YYWW WW = Week (01 to 53)

DMP4011SK3Q 1 of 7 January 2019

Document number: DS40986 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMP4011SK3Q

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS ±20 V
Steady TC = +25°C -74
ID A
State TC = +70°C -59
Continuous Drain Current (Note 7) VGS = -10V
Steady TA = +25°C -14
ID A
State TA = +70°C -11
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -200 A
Maximum Body Diode Forward Current (Note 7) IS -70 A
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%) ISM -200 A
Avalanche Current, L = 1mH (Note 8) IAS -22 A
Avalanche Energy, L = 1mH (Note 8) EAS 250 mJ

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) PD 1.8 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 84 °C/W
Total Power Dissipation (Note 7) PD 3.1 W
Thermal Resistance, Junction to Ambient (Note 7) Steady State RJA 41
°C/W
Thermal Resistance, Junction to Case RJC 1.4
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BVDSS -40   V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS   -1 µA VDS = -32V, VGS = 0V
Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage VGS(TH) -1.0 -2.0 -2.5 V VDS = VGS, ID = -250µA
 6.5 11 VGS = -10V, ID = -9.8A
Static Drain-Source On-Resistance RDS(ON) m
 10.8 19 VGS = -4.5V, ID = -9.8A
Diode Forward Voltage VSD  -0.7 -1 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss  2747 
VDS = -20V, VGS = 0V
Output Capacitance Coss  508  pF
f = 1MHz
Reverse Transfer Capacitance Crss  222 
Gate Resistance Rg  21.4   VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg  25 
Total Gate Charge (VGS = -10V) Qg  52  VDS = -20V,
nC
Gate-Source Charge Qgs  8.5  ID = -9.8A
Gate-Drain Charge Qgd  11.8 
Turn-On Delay Time tD(ON)  6.6 
Turn-On Rise Time tR  6.5  VGS = -10V, VDD = -20V,
ns
Turn-Off Delay Time tD(OFF)  222  RG = 6, ID = -1A
Turn-Off Fall Time tF  138 
Reverse Recovery Time tRR  25  ns IF = -9.8A, di/dt = -100A/µs
Reverse Recovery Charge QRR  17  nC IF = -9.8A, di/dt = -100A/µs
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.

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30.0 30
VGS = -4.5V
VDS = -5.0V
VGS = -10V
25.0 VGS = -4.0V 25
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

20.0 20

15.0 15

10.0 VGS = -3.5V 10

TJ = 150℃ TJ = 85℃
5.0 5
VGS = -3.0V VGS = -3.2V TJ = 25℃
TJ = 125℃
TJ = -55℃
0.0 0
0 0.5 1 1.5 2 2.5 3 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic
0.020 0.2

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.18

VGS = -4.5V 0.16

0.015
0.14

0.12

0.010 0.1
VGS = -10V
0.08

0.06
0.005
0.04 ID = -9.8A

0.02

0.000 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic
and Gate Voltage
0.02 2.2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS = -10V
2
0.016 1.8
TJ = 150℃
1.6 VGS = -10V, ID = -9.8A
(NORMALIZED)

0.012
TJ = 125℃ 1.4
TJ = 85℃
1.2
0.008
TJ = 25℃
1
VGS = -4.5V, ID = -9.8A
TJ = -55℃ 0.8
0.004
0.6

0 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current Figure 6. On-Resistance Variation with
and Temperature Temperature

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 DMP4011SK3Q
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.025 3
2.8

VGS(TH), GATE THRESHOLD VOLTAGE (V)

2.6
0.02
2.4 ID = -1mA
VGS = -4.5V, ID = -9.8A 2.2

0.015 2
1.8 ID = -250μA
1.6
0.01 1.4
1.2
VGS = -10V, ID = -9.8A 1
0.005
0.8
0.6
0 0.4
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction
Temperature
30 10000
VGS = 0V f = 1MHz
25 CT, JUNCTION CAPACITANCE (pF)
Ciss
IS, SOURCE CURRENT (A)

20

15 1000
Coss

10

TJ = 85℃
5 TJ = 150℃
TJ = 25℃
Crss
TJ = 125℃ TJ = -55℃
0 100
0 0.3 0.6 0.9 1.2 0 10 20 30 40
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance
10 1000
RDS(ON)
Limited PW = 1µs

8
100 PW = 10µs
ID, DRAIN CURRENT (A)

6
VGS (V)

10 PW = 100µs
PW = 1ms
4
TJ(Max) = 150℃ PW = 10ms
VDS = -20V, ID = -9.8A TC = 25℃ PW = 100ms
1
Single Pulse
2 DC
DUT on Infinite
Heatsink
VGS = -10V
0 0.1
0 5 10 15 20 25 30 35 40 45 50 55 60 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area

DMP4011SK3Q 4 of 7 January 2019

Document number: DS40986 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMP4011SK3Q

D=0.7
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
D=0.9

0.1
D=0.1

D=0.05

D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse RθJC (t) = r(t) * RθJC
RθJC = 1.46℃/W
Duty Cycle, D = t1/t2

0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance

DMP4011SK3Q 5 of 7 January 2019

Document number: DS40986 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMP4011SK3Q

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

E
A
b3
7° ± 1°
c TO252 (DPAK)
L3 Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
D
A2 b 0.64 0.88 0.783
H
L4 b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21 - -
e
e - - 2.286
b(3x) E 6.45 6.70 6.58
b2(2x) E1 4.32 - -
H 9.40 10.41 9.91
0.508
Gauge Plane L 1.40 1.78 1.59
L3 0.88 1.27 1.08
D1
L4 0.64 1.02 0.83
E1 Seating Plane
a 0° 10° -
L
a

A1 All Dimensions in mm
2.74REF

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

X1

Dimensions Value (in mm)

C 4.572
X 1.060
Y1 X1 5.632
Y 2.600
Y1 5.700
Y2 Y2 10.700

DMP4011SK3Q 6 of 7 January 2019

Document number: DS40986 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMP4011SK3Q

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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labeling can be reasonably expected to result in significant injury to the user.

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Copyright © 2019, Diodes Incorporated

www.diodes.com

DMP4011SK3Q 7 of 7 January 2019

Document number: DS40986 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
Mouser Electronics

Authorized Distributor

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DMP4011SK3Q-13