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251-lab1

The lab report details an experiment conducted to study the I-V characteristics of a PN junction diode, focusing on its behavior under forward and reverse bias conditions. The report outlines the objectives, theory, apparatus used, and findings, highlighting the diode's role as a conductor or insulator based on applied voltage. The results indicate a distinct forward bias region where current increases with voltage and a reverse bias region where current remains near zero, essential for circuit design involving diodes.

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2022-2-60-043
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8 views

251-lab1

The lab report details an experiment conducted to study the I-V characteristics of a PN junction diode, focusing on its behavior under forward and reverse bias conditions. The report outlines the objectives, theory, apparatus used, and findings, highlighting the diode's role as a conductor or insulator based on applied voltage. The results indicate a distinct forward bias region where current increases with voltage and a reverse bias region where current remains near zero, essential for circuit design involving diodes.

Uploaded by

2022-2-60-043
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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East West University

Lab Report-01
Semester:Fall-2025

Course : Electronic Circuits(CSE-251)


Section – 1
Experiment No: 01
Experiment name: To study the I-V Characteristics of PN junction Diode

Submitted by
Group -

Name ID
Md Arman Hossain 2022-2-60-043
Mohammad Tauhid Hossain 2023-2-60-132
Raisul Islam Al Sami 2023-2-60-134

Submitted to
Dr. Md. Habibur Rahman
Adjunct faculty
Department of Computer Science and Engineering
East west University

Submission Date: 03/03/2025


Experiment No 1: To study the I-V Characteristics of PN junction Diode

Objectives:
1. To study the behavior of current due to a semiconductor.
2. To study the PN junction diode’s forward bias and Reverse bias characteristics.
3. Learn about resistors and diode.
4. Use a multimeter to measure a resistor and diode
5. To confirm I-V Characteristic

Theory:
A diode is a bi-polar device that behaves as the short circuit when it is in forward bias and as an
open circuit when it is in reverse bias condition. A P-N junction is an interface or a boundary
between two semiconductor material types, namely the p-type and the n-type, inside a
semiconductor. In a semiconductor, the P-N junction is created by doping. The p-side or the positive
side of the semiconductor has an excess of holes, and the n side, or the negative side has many
electrons.
In the following circuit test, forward biasing means putting a voltage across. A diode that allows
current to flow quickly, while reverse biasing means putting a voltage across a diode in the opposite
direction. At the reverse bias condition, the number of current flows through the diode is very small
(at microampere range). But if the voltage continuously increases in reverse direction, at a certain
value the diode will break down and huge amount of current will flow in reverse direction. This is
called breakdown of diode. In the laboratory the breakdown will not be tested because it will
damage the diode permanently. If the input voltage is varied and the current through the diode
corresponding to each voltage are taken, the plot of diode current (Id) VS diode voltage (VD) will be
follows:
I-V Characteristic of diode
At the reverse bias condition, the number of current flows through the diode is very small (at
microampere range). But if the voltage continuously increases in reverse direction, at a certain
value the diode will break down and huge amount of current will flow in reverse direction. This is
called breakdown of diode. In the laboratory the breakdown will not be tested because it will
damage the diode permanently.
From the characteristics curve, a particular forward bias voltage (VT) is required to reach the
region of upward swing. This voltage, VT is called the cut-in voltage or threshold voltage of diode.
For Si diode the typical value of threshold voltage is 0.7 volt and for Ge diode is 0.3 volt.

Diagrams:
1.Forward Bias
2. Reverse Bias

Apparatus:
1) Breadboard
2) DC power supply
3) 1k ohms resistor (1pc)
4) Ammeter
5) Diode 1N4007 (1pc)
6) Digital Multimeter
7) Connecting wires

Graphs:

12 Fo r w a r d B i a s
10
10 Vd(V) Id(mA) 9
8.4
8
Id(mA)

6
4.5
4
1.5
2
0 0 0.2 0.3 0.2
0 0.66 0.675 0.687
0.1 0 0 0.4 0.5 0.6
Vd(V)

Graph of Forward Bias


Data Sheet:

After comparing the theoretical & measured values we found that there are some minor changes
between the measured value and theoretical value.
Discussion:
In this experiment, we studied the I-V characteristics of a P-N junction diode, which acts as a partial
conductor, behaving as a conductor or insulator based on voltage, current, and temperature. The
characteristic curve shows distinct forward and reverse bias regions. In the forward bias, the
current increases rapidly with voltage, indicating efficient conduction due to the lowered potential
barrier. In the reverse bias, the current remains near zero, effectively blocking current flow. The
forward voltage drop indicates the voltage needed to overcome the potential barrier. This
investigation is crucial for understanding and designing circuits with P-N junction diodes.

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